NPN POWER TRANSISTOR IC 400MA Search Results

2scr375

Contextual Info: 2SCR375P Datasheet NPN 1.5A 120V Middle Power Transistor lOutline Parameter Value VCEO IC 120V 1.5A MPT3 Base Collector Emitter 2SCR375P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Low VCE(sat) VCE(sat)=0.30V(Max.) (IC/IB=800mA/80mA)

FZT694B

Abstract: DSA003714
Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT694B TYPICAL CHARACTERISTICS IC/IB=200 0.8 - Volts - (Volts) IC/IB =10 0.6 0.6 0.2 0.1 1 1.4 0.01 10 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC

HN1C07F

Contextual Info: HN1C07F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C07F Unit: mm Audio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications Excellent Currrent gain(hFE )linearity : hFE(2) =25 (Min.) at VCE = 6V IC = 400mA

Contextual Info: HN1C07F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C07F Unit: mm Audio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications z Excellent Currrent gain(hFE ) linearity : hFE(2) = 25 (min) at VCE = 6V, IC = 400mA

Contextual Info: HN1C07F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C07F Unit: mm Audio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications z Excellent Currrent gain(hFE )linearity : hFE(2) =25 (Min.) at VCE = 6V IC = 400mA

HN1C07F

Contextual Info: HN1C07F TOSHIBA Transistor Silicon NPN Epitaxial Type PCT Process HN1C07F Unit: mm Audio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications z Excellent Currrent gain(hFE )linearity : hFE(2) =25 (min) at VCE = 6V IC = 400mA

2sc4118

Abstract: marking IAY 2SA1588
Contextual Info: TOSHIBA 2SC4118 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS 2 S C 4 1 18 AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS DRIVER STAGE AMPLIFIER APPLICATIONS SWITCHING APPLICATIONS Excellent hjpg Linearity hFE(2) = 25 (Min.) (VCE = 6V, IC = 400mA)

Contextual Info: Transistors SMD Type Epitaxial Planar NPN Transistor KTC4374 SOT-89 Unit:mm 1.50 ±0.1 4.50±0.1 • Features 1.80±0.1 2.50±0.1 4.00±0.1 ● Collector Power Dissipation: PC=500mW ● Collector Current: IC=400mA 0.53±0.1 0.80±0.1 3 0.44±0.1 0.40±0.1

D3055

Abstract: CJD3055 cev code CJD2955
Contextual Info: Central CJD2955 PNP CJD3055 NPN Sem iconductor Corp. COMPLEMENTARY SILICON POWER TRANSISTOR DESCRIPTION: The CENTRAL SE M IC O N D U C T O R CJD2955, CJ D3055types are Complementary Silicon Power Transistors manufactured by the epitaxial base process, mounted in a

marking IAY

Abstract: 2SA1182 2SC2859
Contextual Info: TO SH IBA 2SC2859 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PCT PROCESS 2SC2859 Unit in mm AUDIO FREQUENCY LOW POWER AMPLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. SWITCHING APPLICATIONS. • • 2.5 + — 0.5 0.3 Excellent hjpg Linearity : hFE (2) = 25(Min.) (VCE = 6V, Ic = 400mA)

Contextual Info: FJA4310 NPN Epitaxial Silicon Transistor • • • • • Audio Power Amplifier High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJA4210 TO-3P 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* Ta = 25°C unless otherwise noted

Contextual Info: KSC4468 KSC4468 Audio Power Amplifier • • • • High Current Capability : IC=15A High Power Dissipation Wide S.O.A Complement to KSA1695 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

FJA4210

Abstract: FJA4310
Contextual Info: FJA4310 FJA4310 Audio Power Amplifier • • • • High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJA4210 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: FJA4310 NPN Epitaxial Silicon Transistor • • • • • Audio Power Amplifier High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJA4210 TO-3P 1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings* T a = 25°C unless otherwise noted

FJA4210

Abstract: FJA4310
Contextual Info: FJA4310 FJA4310 Audio Power Amplifier • • • • High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJA4210 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

Contextual Info: FJA4310 FJA4310 Audio Power Amplifier • • • • High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJA4210 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

J4310F-Y

Abstract: J4310F J4310 J4310F-O
Contextual Info: FJAF4310 FJAF4310 Audio Power Amplifier • • • • High Current Capability : IC=10A High Power Dissipation Wide S.O.A Complement to FJAF4210 TO-3PF 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

KSA1695

Abstract: KSC4468
Contextual Info: KSC4468 KSC4468 Audio Power Amplifier • • • • High Current Capability : IC=8A High Power Dissipation Wide S.O.A Complement to KSA1695 TO-3P 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted

ZTX853

Abstract: DSA003778
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX853 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 830 950 V IC=4A, VCE=2V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio

ZTX855

Abstract: VCB-200V DSA003778
Contextual Info: NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR ZTX855 ELECTRICAL CHARACTERISTICS at Tamb = 25°C MIN. TYP. MAX. UNIT CONDITIONS. 0.88 1 V IC=4A, VCE=5V* PARAMETER SYMBOL Base-Emitter Turn-On Voltage VBE(on) Static Forward Current Transfer Ratio

CZT3055

Abstract: 30ma 40v npn KZT3055
Contextual Info: Transistors IC SMD Type 2.0W Surface Mount Complementary NPN Silicon Power Transistor KZT3055 CZT3055 SOT-223 Features Unit: mm +0.2 3.50-0.2 6.50 +0.2 -0.2 Low voltage (max. 60V). +0.1 3.00-0.1 +0.15 1.65-0.15 0.1max +0.05 0.90-0.05 High current (max. 6A).

ZXTN25050DFH

Abstract: ZXTN25050DFHTA
Contextual Info: ZXTN25050DFH 50V, SOT23, NPN medium power transistor Summary BVCEX > 150V BVCEO > 50V BVECO > 5V IC cont = 4A VCE(sat) < 60mV @ 1A RCE(sat) = 40m⍀ PD = 1.25W Description C Advanced process capability and package design have been used to maximize the power handling and performance of this small outline

Contextual Info: A Product Line of Diodes Incorporated Green DXT5616U 80V NPN MEDIUM POWER TRANSISTOR IN TO126 Features Mechanical Data •    BVCEO > 80V IC = 1A Continuous Collector Current ICM = 2A Peak Pulse Current Low Saturation Voltage VCE sat < 500mV @ 0.5A

2SA1182

Contextual Info: TOSHIBA 2SC2859 TO SHIBA TRANSISTOR SILICON NPN EPITAXIAL PCT PROCESS 2SC2859 Unit in mm A U D IO FREQUENCY LO W POWER AM PLIFIER APPLICATIONS. DRIVER STAGE AMPLIFIER APPLICATIONS. + 0 .5 2 .5 -0 .3 SW ITCHING APPLICATIONS. • Excellent hjnE Linearity : hFE (2) = 25(Min.) (VCE = 6V, IC = 400mA)