NPN TRANSISTOR 100V MIN Search Results

NPN TRANSISTOR 100V MIN Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)

NPN TRANSISTOR 100V MIN Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
ZX5T853Z Abstract: ZX5T853ZTA Contextual Info: ZX5T853Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new 5th generation low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in	Original	ZX5T853Z ZX5T853ZTA ZX5T853Z ZX5T853ZTA	PDF
SOT89 transistor marking 5A Abstract: ZXTN2011Z ZXTN2011ZTA Contextual Info: ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits	Original	ZXTN2011Z ZXTN2011ZTA SOT89 transistor marking 5A ZXTN2011Z ZXTN2011ZTA	PDF
Contextual Info: ZXTN2011Z 100V NPN LOW SATURATION MEDIUM POWER TRANSISTOR IN SOT89 SUMMARY BVCEO = 100V : RSAT = 31m ; IC = 4.5A DESCRIPTION Packaged in the SOT89 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits	Original	ZXTN2011Z ZXTN2011ZTA ZXTN20miconductors	PDF
ZXTN Abstract: ZXTN2011GTC sot223 device Marking ZXTN2011G ZXTN2011GTA Bv 42 transistor Contextual Info: ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits	Original	ZXTN2011G OT223 OT223 ZXTN2011GTA ZXTN2011GTC ZXTN ZXTN2011GTC sot223 device Marking ZXTN2011G ZXTN2011GTA Bv 42 transistor	PDF
ZXTN2011G Abstract: ZXTN2011GTA ZXTN2011GTC Contextual Info: ZXTN2011G 100V NPN LOW SATURATION MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC circuits	Original	ZXTN2011G OT223 OT223 ZXTN2011GTA ZXTN2011GTC ZXTN2011G ZXTN2011GTA ZXTN2011GTC	PDF
NPN transistor collector base and emitter Abstract: NTE96 10-32 UNF 2A Contextual Info: NTE96 Silicon NPN Transistor Power Switching Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V	Original	NTE96 10-32-UNF-2A NPN transistor collector base and emitter NTE96 10-32 UNF 2A	PDF
ZX5T853G Abstract: ZX5T853GTA ZX5T853GTC Contextual Info: ZX5T853G 100V NPN LOW SAT MEDIUM POWER LOW SATURATION TRANSISTOR IN SOT223 SUMMARY BVCEO = 100V : RSAT = 36m ; IC = 6A DESCRIPTION Packaged in the SOT223 outline this new 5th generation low saturation 100V NPN transistor offers extremely low on state losses making it ideal for use in DC-DC	Original	ZX5T853G OT223 OT223 ZX5T853GTA ZX5T853GTC ZX5T853G ZX5T853GTA ZX5T853GTC	PDF
NTE74 Abstract: 10-32 UNF NPN transistor collector base and emitter Contextual Info: NTE74 Silicon NPN Transistor General Purpose Switch Absolute Maximum Ratings: Collector−Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V	Original	NTE74 10-32-UNF-2A NTE74 10-32 UNF NPN transistor collector base and emitter	PDF
NTE46 Contextual Info: NTE46 Silicon NPN Transistor Darlington, General Purpose Amplifier, Preamp, Driver Absolute Maximum Ratings: Collector–Emitter Voltage, VCES . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V	Original	NTE46 500mA 100mA, 100MHz, 100kHz NTE46	PDF
ZXTN19100CZ Abstract: TS16949 ZXTN19100CZTA ZXTP19100CZ Contextual Info: ZXTN19100CZ 100V NPN medium power transistor in SOT89 Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 5.25A VCE(sat) < 65mV @ 1A RCE(sat) = 44m⍀ PD = 2.4W Complementary part number ZXTP19100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor	Original	ZXTN19100CZ ZXTP19100CZ D-81541 ZXTN19100CZ TS16949 ZXTN19100CZTA ZXTP19100CZ	PDF
ZXTN25100DG Abstract: ZXTN25 TS16949 ZXTN25100DGTA ZXTP19100CG Contextual Info: ZXTN25100DG 100V NPN high gain transistor in SOT223 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 3A VCE(sat) < 100mV @ 1A RCE(sat) = 85m⍀ PD = 3.0W Complementary part number ZXTP19100CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor	Original	ZXTN25100DG OT223 100mV ZXTP19100CG OT223 D-81541 ZXTN25100DG ZXTN25 TS16949 ZXTN25100DGTA ZXTP19100CG	PDF
TS16949 Abstract: ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ Contextual Info: ZXTN25100DZ 100V NPN high gain transistor in SOT89 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 100mV @ 1A RCE(sat) = 80m⍀ PD = 2.4W Complementary part number ZXTP25100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor	Original	ZXTN25100DZ 100mV ZXTP25100CZ D-81541 TS16949 ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ	PDF
Zetex ZXTP19100CZ Contextual Info: ZXTN19100CZ 100V NPN medium power transistor in SOT89 Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 5.25A VCE(sat) < 65mV @ 1A RCE(sat) = 44m⍀ PD = 2.4W Complementary part number ZXTP19100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor	Original	ZXTN19100CZ ZXTP19100CZ D-81541 Zetex ZXTP19100CZ	PDF
100C Abstract: TS16949 ZXTN19100CG ZXTN19100CGTA ZXTP19100CG Contextual Info: ZXTN19100CG 100V NPN low sat medium power transistor in SOT223 Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 5.5A VCE(sat) < 65mV @ 1A RCE(sat) = 43mΩ PD = 3.0W Complementary part number ZXTP19100CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor	Original	ZXTN19100CG OT223 ZXTP19100CG OT223 D-81541 100C TS16949 ZXTN19100CG ZXTN19100CGTA ZXTP19100CG	PDF

Contextual Info: LF PA K 56 PHPT61002NYC 100V, 2 A NPN high power bipolar transistor 9 January 2014 Product data sheet 1. General description NPN high power bipolar transistor in a SOT669 LFPAK56 Surface-Mounted Device (SMD) power plastic package. PNP complement: PHPT61002PYC	Original	PHPT61002NYC OT669 LFPAK56) PHPT61002PYC	PDF
Contextual Info: BFX85 NPN SILICON TRANSISTOR TO-39 The BFX85 is NPN silicon planar epitaxial transistor designed for medium power amplifiers and switching applications where high voltage and high current are required. ciUKJ in ABSOLUTE MAXIMUM RATINGS 100V 60V 6V 1A 800mW	OCR Scan	BFX85 BFX85 800mW 150mA 500mA 100mA* 20MHz	PDF
fzt 655 Abstract: FZT marking code Contextual Info: A Product Line of Diodes Incorporated Green FZT7053 100V NPN DARLINGTON TRANSISTOR IN SOT223 Features Mechanical Data • • • • • • • • • • • • BVCEO > 100V BVCBO > 100V IC = 1.5A high Continuous current hFE > 10k for very high gain @ 100mA	Original	FZT7053 OT223 100mA AEC-Q101 J-STD-020 MIL-STD-202, OT223 FZT7053 DS31895 fzt 655 FZT marking code	PDF
Contextual Info: FCX493 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SUMMARY VCEO = 100V : IC = 1A Complementary type FCX593 DESCRIPTION Packaged in the SOT89 outline this 100V device provides excellent high performance and is ideally suited to load management functions.	Original	FCX493 FCX593 FCX493TA FCX493TC	PDF
NTE56 Contextual Info: NTE56 Silicon NPN Transistor High Gain Switch and Pass Regulator Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V	Original	NTE56 NTE56	PDF
MARKING N93 Abstract: 4446 FCX493 FCX593 fcx493ta Contextual Info: FCX493 SOT89 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR SUMMARY VCEO = 100V : IC = 1A Complementary type FCX593 DESCRIPTION Packaged in the SOT89 outline this 100V device provides excellent high performance and is ideally suited to load management functions.	Original	FCX493 FCX593 FCX493TA FCX493TC MAX00 MARKING N93 4446 FCX493 FCX593 fcx493ta	PDF
2SB123 Abstract: 2SB1232 2SD1842 Contextual Info: Ordering number:EN3261A 2SB1232 : PNP Epitaxial Planar Silicon Transistor 2SD1842 : NPN Triple Diffused Planar Silicon Transistor 2SB1232/2SD1842 100V/40A Switching Applications Applications Package Dimensions • Motor drivers, relay drivers, converters, and other	Original	EN3261A 2SB1232 2SD1842 2SB1232/2SD1842 00V/40A 2SB1232/2SD1842] 2SB123 2SB1232 2SD1842	PDF
2SD1842 Abstract: 2SB1232 ITR09408 ITR09409 ITR09410 Contextual Info: Ordering number:ENN3261A 2SB1232 : PNP Epitaxial Planar Silicon Transistor 2SD1842 : NPN Triple Diffused Planar Silicon Transistor 2SB1232/2SD1842 100V/40A Switching Applications Applications Package Dimensions • Motor drivers, relay drivers, converters, and other	Original	ENN3261A 2SB1232 2SD1842 2SB1232/2SD1842 00V/40A 2SB1232/2SD1842] 2SD1842 2SB1232 ITR09408 ITR09409 ITR09410	PDF
Contextual Info: Ordering number:ENN3259 2SB1230 : PNP Epitaxial Planar Silicon Transistor 2SD1840 : NPN Triple Diffused Planar Silicon Transistor 2SB1230/2SD1840 100V/4A Switching Applications Applications Package Dimensions • Motor drivers, relay drivers, converters and other	Original	ENN3259 2SB1230 2SD1840 2SB1230/2SD1840 00V/4A 2SB1230/2SD1840]	PDF
2SB1231 Abstract: 2SD1841 Contextual Info: Ordering number:EN3260A 2SB1231 : PNP Epitaxial Planar Silicon Transistor 2SD1841 : NPN Triple Diffused Planar Silicon Transistor 2SB1231/2SD1841 100V/25A Switching Applications Applications Package Dimensions • Motor drivers, relay drivers, converters, and other	Original	EN3260A 2SB1231 2SD1841 2SB1231/2SD1841 00V/25A 2SB1231/2SD1841] 2SB1231 2SD1841	PDF

NPN TRANSISTOR 100V MIN Search Results

NPN TRANSISTOR 100V MIN Result Highlights (5)

NPN TRANSISTOR 100V MIN Datasheets Context Search

ZX5T853Z

SOT89 transistor marking 5A

ZXTN

ZXTN2011G

NPN transistor collector base and emitter

ZX5T853G

NTE74

NTE46

ZXTN19100CZ

ZXTN25100DG

TS16949

Zetex ZXTP19100CZ

100C

fzt 655

NTE56

MARKING N93

2SB123

2SD1842

2SB1231