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    NPN TRANSISTOR MARKING NY Search Results

    NPN TRANSISTOR MARKING NY Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    NPN TRANSISTOR MARKING NY Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2n5109

    Abstract: transistor 2N5109 2n5109 transistor transistor marking code AL VCE-15V NPN transistor marking NY chip die npn transistor
    Text: Central 2N5109 TM Semiconductor Corp. SILICON NPN RF TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N5109 is a Silicon NPN Epitaxial Planar RF Transistor mounted in a hermetically sealed package designed for high frequency amplifier applications. MARKING CODE: FULL PART NUMBER


    Original     		PDF 2N5109 CP214 2N5109 transistor 2N5109 2n5109 transistor transistor marking code AL VCE-15V NPN transistor marking NY chip die npn transistor

    Untitled

    Abstract: No abstract text available
    Text: FMMTA42 SOT23 NPN Silicon planar high voltage transistor Device marking FMMTA42 - 3E Complementary types FMMTA92 Absolute maximum ratings Parameter Collector-base voltage Symbol VCBO FMMTA42 300 Unit V Collector-emitter voltage VCEO 300 V Emitter-base voltage


    Original     		PDF FMMTA42 FMMTA92

    FMMTA42

    Abstract: FMMTA92 TS16949 semiconductors 3E
    Text: FMMTA42 SOT23 NPN Silicon planar high voltage transistor Device marking FMMTA42 - 3E Complementary types FMMTA92 Absolute maximum ratings Parameter Collector-base voltage Symbol VCBO FMMTA42 300 Unit V Collector-emitter voltage VCEO 300 V Emitter-base voltage


    Original     		PDF FMMTA42 FMMTA42 FMMTA92 D-81541 FMMTA92 TS16949 semiconductors 3E

    SOT89 52 10A

    Abstract: FCX495 TS16949 marking N95
    Text: FCX495 SOT89 NPN silicon planar high voltage transistor Features • 150 Volt VCEO • 1 Amp continuous current E C C Device marking B N95 Pinout - top view Absolute maximum ratings Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage


    Original     		PDF FCX495 D-81541 SOT89 52 10A FCX495 TS16949 marking N95

    FMMT497

    Abstract: FMMT597 TS16949
    Text: FMMT497 SOT23 NPN silicon planar high voltage high performance transistor Complementary part number - FMMT597 C Device marking - 497 B E E C B Pinout - top view Absolute maximum ratings Parameter Symbol Value Unit Collector-base voltage VCBO 300 V Collector-emitter voltage


    Original     		PDF FMMT497 FMMT597 D-81541 FMMT497 FMMT597 TS16949

    FMMT597

    Abstract: FMMT497 TS16949
    Text: FMMT497 SOT23 NPN silicon planar high voltage high performance transistor Complementary part number - FMMT597 C Device marking - 497 B E E C B Pinout - top view Absolute maximum ratings Parameter Symbol Value Unit Collector-base voltage VCBO 300 V Collector-emitter voltage


    Original     		PDF FMMT497 FMMT597 D-81541 FMMT597 FMMT497 TS16949

    Y2 transistor

    Abstract: Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882
    Text: >>JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD. >>Tel: 86-510-6852812*12 >>Fax: 86-510-6858792 >>http://www.cj-elec.com >>http://www.globalsources.com/cjet.co >>Email:huaxing20@hotmail.com huaxing20@sohu.com >> Huaxing Lee DIODES IN SOD-123


    Original     		PDF huaxing20 OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W Y2 transistor Transistor S8550 2TY bq d882 transistor bc547 bk 045 transistor D882 datasheet Z1 Transistor TRANSISTOR MARK AQY S8050 equivalent K596-B sot 89 D882

    Transistor S8550 2TY

    Abstract: Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6
    Text: DIODES IN SOD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W B5819W BAT42W BAT43W BAT46W* BAV16W BAV19W BAV20W BAV21W SD101AW* SD101BW* SD101CW* SD103AW SD103BW SD103CW PD VR V IFM(mA) IR( A) (mW) 350 75 350 75 250


    Original     		PDF OD-123 1N4148W 1N4448W 1N5711W* 1N6263W* B0520LW B0530W B0540W B5817W B5818W Transistor S8550 2TY Schottky barrier sot-23 Marking s4 sk 8050s KL4 SOT-23 d882 to-92 BR S8050 bq d882 transistor D882 datasheet S8050 equivalent PCR100-6

    transistor pnp VCEO 12V Ic 1A

    Abstract: ZXTD6717E6 ZXTD6717E6TA ZXTD6717E6TC transistor pnp 12V 1A Continuous Current Peak
    Text: ZXTD6717E6 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: VCEO=15V; VCE sat =0.1V; IC= 1.5A; PNP: VCEO=-12V; VCE(sat)=-0.175V; IC= -1.25A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very


    Original     		PDF ZXTD6717E6 OT23-6 OT23-6 transistor pnp VCEO 12V Ic 1A ZXTD6717E6 ZXTD6717E6TA ZXTD6717E6TC transistor pnp 12V 1A Continuous Current Peak

    Untitled

    Abstract: No abstract text available
    Text: ZXTD6717E6 COMPLEMENTARY NPN/PNP LOW SATURATION DUAL TRANSISTORS SUMMARY NPN: VCEO=15V; VCE sat =0.1V; IC= 1A; PNP: VCEO=-60V; VCE(sat)=-0.175V; IC= -1A; DESCRIPTION This new combination device comprises a complementary NPN and PNP low saturation transistor housed in the SOT23-6 package. Users benefit from very


    Original     		PDF ZXTD6717E6 OT23-6 Continuo725

    2K 622

    Abstract: FCX605 FCX605TA MARKING 605
    Text: FCX605 120V NPN SILICON HIGH VOLTAGE DARLINGTON TRANSISTOR SUMMARY VCEO=120V; VCE sat = 1V; IC= 1A DESCRIPTION This new NPN Darlington transistor provides users with very efficeint performance combining low VCE (sat) and very high Hfe to give extremely low


    Original     		PDF FCX605 OT223 2K 622 FCX605 FCX605TA MARKING 605

    npn 1a,

    Abstract: ic c400 CMD4D11-100MC ZXSC400E6TA CMD4D11-220 zener 6v3
    Text: ZXSC400 LED DRIVER BOOST CONVERTER DESCRIPTION The ZXSC400 is voltage mode boost converter in SOT23-6 package. Its low feedback voltage allows the current in a chain of LEDs to be set and accurately monitored with a single resistor with minimal losses. It’s excellent load and line


    Original     		PDF ZXSC400 ZXSC400 OT23-6 OT23-6 LE-04 npn 1a, ic c400 CMD4D11-100MC ZXSC400E6TA CMD4D11-220 zener 6v3

    Untitled

    Abstract: No abstract text available
    Text: ZXSC400 LED DRIVER BOOST CONVERTER DESCRIPTION The ZXSC400 is voltage mode boost converter in SOT23-6 package. Its low feedback voltage allows the current in a chain of LEDs to be set and accurately monitored with a single resistor with minimal losses. It’s excellent load and line


    Original     		PDF ZXSC400 ZXSC400 OT23-6 OT23-6

    MLP832

    Abstract: ZXTD4591AM832 ZXTD4591AM832TA ZXTD4591AM832TC marking 91a
    Text: ZXTD4591AM832 MPPS Miniature Package Power Solutions COMPLEMENTARY DUAL 40V HIGH PERFORMANCE TRANSISTOR SUMMARY NPN Transistor PNP Transistor VCEO = 40V; RSAT = 195m ; C = 2.5A VCEO = -40V; RSAT = 350m ; C = -2A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,


    Original     		PDF ZXTD4591AM832 MLP832 ZXTD4591AM832 ZXTD4591AM832TA ZXTD4591AM832TC marking 91a

    "dual TRANSISTORs" pnp npn

    Abstract: dual npn MLP832 ZXTDE4M832 ZXTDE4M832TA ZXTDE4M832TC power ic 5v 1A 034
    Text: ZXTDE4M832 MPPS Miniature Package Power Solutions DUAL 80V NPN & 70V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 80V; RSAT = 68m ; C = 3.5A VCEO = -70V; RSAT = 117m ; C = -2.5A DESCRIPTION Packaged in the new innovative 3mm x 2mm MLP Micro Leaded Package ,


    Original     		PDF ZXTDE4M832 "dual TRANSISTORs" pnp npn dual npn MLP832 ZXTDE4M832 ZXTDE4M832TA ZXTDE4M832TC power ic 5v 1A 034

    Untitled

    Abstract: No abstract text available
    Text: OBSOLETE - PLEASE USE ZXTC6717MC ZXTDA1M832 MPPS Miniature Package Power Solutions DUAL 15V NPN & 12V PNP LOW SATURATION TRANSISTOR COMBINATION SUMMARY NPN Transistor PNP Transistor VCEO = 15V; RSAT = 45m ; C = 4.5A VCEO = -12V; RSAT = 60m ; C = -4A DESCRIPTION


    Original     		PDF ZXTC6717MC ZXTDA1M832

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification NPN high-voltage transistor PMBTA42 FEATURES PINNING • Low curren t max. 100 mA PIN • High voltage (max. 300 V). APPLICATIONS DESCRIPTION 1 base 2 e m itte r 3 co lle cto r • T elepho ny and professional com m unication equipm ent.


    OCR Scan     		PDF PMBTA42 BTA92. BTA42 MAM255

    CMXT3904

    Abstract: No abstract text available
    Text: Data Sheet Central m_ _ • CMXT3904 SURFACE MOUNT DUAL NPN SILICON TRANSISTOR Sem iconductor Corp. 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 SOT-26 CASE Manufacturers of World Class Discrete Semiconductors


    OCR Scan     		PDF CMXT3904 OT-26 OT-26

    CMXT2222A

    Abstract: NPN transistor marking NY
    Text: Data Sheet Central' CMXT2222A Sem iconductor Corp. SURFACE MOUNT DUAL NPN SILICON TRANSISTOR 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: 631 435-1110 • Fax: (631) 435-1824 SOT-26 CASE Manufacturers of World Class Discrete Semiconductors DESCRIPTION:


    OCR Scan     		PDF CMXT2222A OT-26 CMXT2222A 150mA, OT-26 NPN transistor marking NY

    W1P 59 transistor

    Abstract: W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn
    Text: Philips S em iconductors S urface m oun ted sem ico n d u cto rs C on ten ts PART A page SELECTION GUIDE General purpose transistors 4 High frequency transistors 8 Broadband transistors 8 Switching transistors 10 Power transistors for switching 12 Low-noise transistors


    OCR Scan     		PDF 197/197X S310N W1P 59 transistor W1p 48 TRANSISTOR transistor w1P 83 ICM AP 1703 transistor SMD marked RNW transistor BD139 PH 71 W1P 66 transistor transistor w1P 91 Pnp transistor smd ba rn w1p npn

    bta92

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T PMBTA42 NPN high-voltage transistor Product specification Supersedes data of 1997 Jul 02 Philips Sem iconductors 1999 Apr 22 PHILIPS Philips Semiconductors Product specification NPN high-voltage transistor PMBTA42 FEATURES


    OCR Scan     		PDF PMBTA42 PMBTA42 BTA92. BTA42 115002/00/03/pp8 bta92

    Pnp transistor smd ba rn

    Abstract: transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28
    Text: ont«* fj= !IS iìC O Ii ú U C i o y G o ï p . TH t N t x ï G é n é r a t i o n o í s m d M D 9 D A T 9 9 and ap iablished jality system f A . the Resign and Manufactu ~ d iscrete ^SeTOiCbiSuct audit as been fu rnlis ishh^ALth th a t tj tJ j A » q u ire le n ts according tj


    OCR Scan     		PDF Q9001-1994i CMSH1-20ML Pnp transistor smd ba rn transistor marking code 12W SOT-23 smd transistor marking p69 TRANSISTOR SMD MARKING CODE s2a transistor smd bc rn TRANSISTOR SMD MARKING CODE bc ru 1ff TRANSISTOR SMD MARKING CODE smd transistor P2D Motorola transistor smd marking codes SMD TRANSISTOR MARKING P28

    MOTOROLA DATE CODE transistor

    Abstract: MSC2295–BT1
    Text: MOTOROLA SC XSTRS/R F 4bE J> • b3b?2S4 00^3721 2 H f l O T ±T ~ 3H £ Order this data sheet by MSC2295-BT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MSC2295-BT1 MSC2295-CT1 NPN Silicon RF Amplifier Transistor M o to r o la p r e f e r r e d d e v ic e s


    OCR Scan     		PDF MSC2295-BT1/D MSC2295-BT1 MSC2295-CT1 SC-59 MOTOROLA DATE CODE transistor MSC2295–BT1

    2sd1805a

    Abstract: 2SD1805
    Text: SA NY O S E M I C O N D U C T O R CORP 7 T T 7 0 7 ta G 0 0 7 5 4 ci T 2SE D T-33-0 2SD1805 7 # * NPN Epitaxial Planar Silicon Transistor 2044 High-Current Switching Applications ansa Applications . Strobes, voltage regulators, relay drivers, lamp drivers


    OCR Scan     		PDF 7T707tu 2SD1805 T-33-07 2SD1805-applied 2sd1805a