NPN TRANSISTOR S9014 Search Results

NPN TRANSISTOR S9014 Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8

NPN TRANSISTOR S9014 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
S9014c Abstract: transistor S9014C PSS9014C s9014-c Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET alfpage M3D186 PSS9014C NPN general purpose transistor Product specification 2002 Mar 15 Philips Semiconductors Product specification NPN general purpose transistor PSS9014C FEATURES PINNING • High power dissipation: 500 mW	Original	M3D186 PSS9014C MAM279 SCA74 613514/01/pp8 S9014c transistor S9014C PSS9014C s9014-c	PDF
s9014c Abstract: transistor s9014c PSS9014C s9014-c s9014 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PSS9014C NPN general purpose transistor Product specification Supersedes data of 2002 Mar 15 2002 Sep 20 Philips Semiconductors Product specification NPN general purpose transistor PSS9014C PINNING FEATURES	Original	M3D186 PSS9014C MAM279 SCA74 613514/02/pp8 s9014c transistor s9014c PSS9014C s9014-c s9014	PDF
s9014c Abstract: SC-43A PSS9014C S9014 Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 PSS9014C NPN general purpose transistor Product specification Supersedes data of 2002 Sep 20 2004 Aug 10 Philips Semiconductors Product specification NPN general purpose transistor PSS9014C PINNING FEATURES	Original	M3D186 PSS9014C MAM279 SCA76 R75/03/pp7 s9014c SC-43A PSS9014C S9014	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B S9014M 1.2x1.2×0.5 unit: mm TRANSISTOR TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to S9015M	Original	WBFBP-03B WBFBP-03B S9014M S9015M	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B S9014M 1.2x1.2×0.5 unit: mm TRANSISTOR TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to S9015M	Original	WBFBP-03B WBFBP-03B S9014M S9015M	PDF
S9015 Abstract: S9015M S9014M Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B S9014M 1.2x1.2×0.5 unit: mm TRANSISTOR TOP DESCRIPTION NPN Epitaxial Silicon Transistor B C 1. BASE FEATURES High hFE and good linearity Complementary to S9015M	Original	WBFBP-03B WBFBP-03B S9014M S9015M S9015 S9015M S9014M	PDF
Contextual Info: S9014S SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS LTD, _ TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER LOW LEVEL & LOW NOISE * * * * * Complement to S9015S Collector Current :Ic=10OmA Collector-Emitter Voltage: Vceo=45V. High Total Power Dissipation: pD=225mW	OCR Scan	S9014S S9015S 10OmA 225mW 100uA 100mA 10VIe 300uS,	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors S9014W TRANSISTOR NPN SOT–323 FEATURES  Complementary to S9015W  Small Surface Mount Package MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	OT-323 S9014W S9015W 100mA, 30MHz	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate Transistors S9014W TRANSISTOR NPN SOT–323 FEATURES  Complementary to S9015W  Small Surface Mount Package MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	OT-323 S9014W S9015W 100mA, 30MHz	PDF
Contextual Info: SOT-23 Plastic-Encapsulate Transistors S9014LT1 NPN TRANSISTOR FEATURES • High total power dissipation.(pc=0.2w) · Complementary to S9015LT1 MARKING: J6 MAXIMUM RATINGS* TA=25? unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	OT-23 S9014LT1 S9015LT1 30MHz	PDF
S9014L Abstract: S9014LT1 sot-23 MARKING O7 S9014LT1-L Contextual Info: S9014LT1 SEMICONDUCTOR Shandong Yiguang Electronic Joint stock Co., Ltd TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPLIFIER,LOW LEVEL&LOW NOISE * Complement to S9015LT1 * Collector Current: Ic= 100mA * Collector-Emitter Voltage:Vce= 45V * High Total Power Dissipation:Pc=225mW	Original	S9014LT1 S9015LT1 100mA 225mW OT-23 100mA 062in 300uS S9014LT1 S9014L sot-23 MARKING O7 S9014LT1-L	PDF
transistor SOT23 J6 Abstract: S9014 SOT-23 transistor S9014 S9014 S9014 sot-23 J6 s9014 equivalent marking J6 s9015 SOT23 transistor j6 sot23 S9014 J6 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 S9014 OT-23 S9015 30MHz transistor SOT23 J6 S9014 SOT-23 transistor S9014 S9014 S9014 sot-23 J6 s9014 equivalent marking J6 s9015 SOT23 transistor j6 sot23 S9014 J6	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 S9014 OT-23 S9015 30MHz	PDF
transistor S9014 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors S9014 SOT-23 TRANSISTOR NPN 1. BASE FEATURES z Complementary to S9015 2. EMITTER 3. COLLECTOR MARKING: J6 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter	Original	OT-23 S9014 OT-23 S9015 30MHz transistor S9014	PDF

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9014 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z High total power dissipation.(PC=0.45W) z High hFE and good linearity z Complementary to S9015 2. BASE 3. COLLECTOR	Original	S9014 S9015 100mA, 30MHz	PDF
transistor SOT23 J6 Abstract: transistor S9014 S9014 SOT-23 j6 sot23 J6 transistor j6 transistor sot-23 SOT-23 j6 transistor npn s9014 S9014 J6 J6 SOT 23 Contextual Info: S9014 SOT-23 Transistor NPN SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Features Complementary to S9015 MARKING: J6 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	S9014 OT-23 OT-23 S9015 30MHz transistor SOT23 J6 transistor S9014 S9014 SOT-23 j6 sot23 J6 transistor j6 transistor sot-23 SOT-23 j6 transistor npn s9014 S9014 J6 J6 SOT 23	PDF
transistor S9014 Abstract: s9014 s9014 equivalent transistor -s9014 s9014 transistor transistor TO-92 S9015 S9014 TO92 S9015 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9014 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z High total power dissipation.(PC=0.45W) z High hFE and good linearity z Complementary to S9015 2. BASE 3. COLLECTOR	Original	S9014 S9015 100mA, 30MHz transistor S9014 s9014 s9014 equivalent transistor -s9014 s9014 transistor transistor TO-92 S9015 S9014 TO92 S9015	PDF
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9014 TO-92 TRANSISTOR NPN 1. EMITTER FEATURES z High Total Power Dissipation.(PC=0.45W) z High hFE and Good Linearity z Complementary to S9015 2. BASE 3. COLLECTOR	Original	S9014 S9015	PDF
Contextual Info: S9014 SEMICONDUCTOR FORWARD INTERNATIONAL ELECTRONICS L ID . TECHNICAL DATA NPN EPITAXIAL SILICON TRANSISTOR PRE-AMPUFIERLOW LEVEL&LOW NOISE Package: TO-92 * * * * Com plem ent To S9015 C ollector C urrent :Ic= 100mA C ollector-Em itter Voltage: V ce=45Y	OCR Scan	S9014 S9015 100mA 100uA 100mA 10VIe	PDF
MARKING E1 SOT23 TRANSISTOR Abstract: S9014LT1 J6 S9014LT1 Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO.,LTD SOT-23 Plastic-Encapsulate Transistors SOT—23 1. BASE S9014LT1 2. EMITTER TRANSISTOR（ NPN ） 3. COLLECTOR １．０ FEATURES Power dissipation PCM : 0.2 W（Tamb=25℃） Collector current ICM : 0.1 A	Original	OT-23 OT--23 S9014LT1 S9014LT1 037TPY 950TPY 550REF 022REF MARKING E1 SOT23 TRANSISTOR S9014LT1 J6	PDF
BR 9014 Abstract: BR 9014 c BR 9014 transistor transistors BR 9014 TRANSISTOR 9014 S9014 V. 9014 c 9014 Contextual Info: TO-92 Plastic-Encapsulate Transistors S9014 TRANSISTOR NPN TO-92 FEATURES 1. EMITTER Power dissipation PCM: 2. BASE 0.4 W (Tamb=25℃) 3. COLLECTOR Collector current 0.1 A ICM: Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range	Original	S9014 BR 9014 BR 9014 c BR 9014 transistor transistors BR 9014 TRANSISTOR 9014 S9014 V. 9014 c 9014	PDF
s9014 transistor Abstract: transistor S9014 s9014 s9014 equivalent s9014 transistor datasheet s9014transistor transistor npn s9014 Contextual Info: S9014 TRANSISTOR NPN 2.92 MIN FEATURES 0.4 W (Tamb=25℃) Collector current ICM: 0.1 A Collector-base voltage 50 V V(BR)CBO: Operating and storage junction temperature range 4.32 5.33 12.7 6.35 MIN MIN 0.41 0.41 0.53 0.48 Seating Plane Power dissipation	Original	S9014 25MAX 30MHz s9014 transistor transistor S9014 s9014 s9014 equivalent s9014 transistor datasheet s9014transistor transistor npn s9014	PDF
S9014W Abstract: S9015W Contextual Info: S9014W NPN Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURE SOT-323 Complementary to S9015W A L 3 3 C B Top View 1 1 PACKAGING INFORMATION K 2 E 2 Weight: 0.0074 g	Original	S9014W OT-323 S9015W 100mA, 30MHz 01-June-2002 S9014W S9015W	PDF
s9014 transistor Abstract: transistor TO-92 S9014 s9014 equivalent datasheet of ic 555 S9014 s9014 datasheet S9014transistor Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors S9014 TRANSISTOR（ NPN ） TO—92 FEATURES Power dissipation PCM : 0.4 W（Tamb=25℃） Collector current ICM : 0.1 A Collector-base voltage V BR CBO : 50 V Operating and storage junction temperature range	Original	S9014 O--92 30MHz 270TYP 050TYP s9014 transistor transistor TO-92 S9014 s9014 equivalent datasheet of ic 555 S9014 s9014 datasheet S9014transistor	PDF

NPN TRANSISTOR S9014 Search Results

NPN TRANSISTOR S9014 Result Highlights (5)

NPN TRANSISTOR S9014 Datasheets Context Search

S9014c

s9014c

s9014c

S9015

S9014L

transistor SOT23 J6

transistor S9014

transistor SOT23 J6

transistor S9014

MARKING E1 SOT23 TRANSISTOR

BR 9014

s9014 transistor

S9014W

s9014 transistor