NPN TRANSISTOR T12 Search Results

transistor D 2578

Abstract: BFQ34
Contextual Info: DISCRETE SEMICONDUCTORS BFQ34 NPN 4 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Sem iconductors PHILIPS Philips Semiconductors Product specification NPN 4 GHz wideband transistor DESCRIPTION

RT1C3904-T12

Abstract: RT1C3904 c10A TRANSISTOR
Contextual Info: RT1C3904-T12 PRELIMINARY Notice:this is not a final specification. Some parametric limits are subject to change. Transistor For General purpose Application Silicon NPN Epitaxial Type RT1C3904 is a one chip transistor. OUTLINE DRAWING UNIT:mm FEATURE 0.5 ・Mini package for easy mounting.

MO-187

Abstract: ZXT12N20DX ZXT12N20DXTA ZXT12N20DXTC
Contextual Info: ZXT12N20DX SuperSOT4 DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=20V; RSAT = 40m ; IC= 3.5A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

t12n50dx

Abstract: T12N50 MO-187 ZXT12N50DXTC ZXT12N50DX ZXT12N50DXTA DSA0037450
Contextual Info: ZXT12N50DX SuperSOT4 DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY VCEO=50V; RSAT = 45m ; IC= 3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give

D 823 transistor

Abstract: transistor PH ON 823 m
Contextual Info: Philips Semiconductors • bbSBTBl QDHimD bbfi H A P X Product specification N AUER PHILIPS/D ISCR ETE b?E D NPN 5 GHz wideband transistor DESCRIPTION NPN planar epitaxial transitor mounted in a plastic SOT223 envelope. It features excellent output voltage

T12N50

Abstract: 69 PIC transistor
Contextual Info: ZETEX ZXT12N50DX SuperS0T4 DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR SUMMARY Vceo=50V; Rsat = 45m il; lc= 3A DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex m atrix structure com bined w ith advanced assembly techniques to give

SILICON COMPLEMENTARY transistors darlington

Abstract: CZT122 CZT127
Contextual Info: C Z T122 C ZT127 Central" NPN PNP Semiconductor Corp. COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CZT122, CZT127 types are Complementary Silicon Power Darlington Transistors manufactured in a surface mount package designed for low

LEE1015T

Abstract: SC15
Contextual Info: Philips Semiconductors Product specification NPN microwave power transistor LEE1015T P IN N IN G -S O T122A FEATURES • Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR PIN • Interdigitated structure provides high emitter efficiency

philips resistor 2322 763

Abstract: bfg97 scattering BFG97 D 1413 transistor BFG31 UBB774 PH ON 823 TRANSISTOR BFg97 24C1S
Contextual Info: Philips Sem iconductors — — — • bba oosmtid mapx Product specification N AMER P H I L I P S / D I S C R E T E ti7E D NPN 5 GHz wideband transistor DESCRIPTION BFG97 PINNING NPN planar epitaxial transitor mounted in a plastic SOT223 envelope. It features excellent output voltage

a1169

Abstract: t1202 7518 SFT1202
Contextual Info: SFT1202 Ordering number : ENA1169 SANYO Semiconductors DATA SHEET SFT1202 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features • •

MTD6180

Abstract: MTE1070A
Contextual Info: I flE D 5 7 ^ 5 5 GGD04Q4 4 PHOTO TRANSISTOR MARK TECH INTERNATIONAL MTD6180 SILICON NPN EPITAXIAL PLANAR - I— t 1 I SILICON PHOTO TRANSISTOR FOR PHOTO SENSOR u S fc d J K' L M APPLICATIONS • OPTICAL SWITCH F —H • INTER R U PTER 1. EMITTER 2. COLLECTOR

ENA1168

Abstract: SFT1201 A1168 t1201 T-1201
Contextual Info: SFT1201 Ordering number : ENA1168 SANYO Semiconductors DATA SHEET SFT1201 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features • •

Contextual Info: SFT1202 Ordering number : ENA1169A SANYO Semiconductors DATA SHEET SFT1202 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features • •

mcd206

Abstract: philips Trimmer 60 pf BLV13 MCD211 C106W
Contextual Info: Philips Sem iconductors VHF power transistor • bSE D DQbSûES P H IL IP S T ll PHI N Emitter-ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability. IN T E R N A TIO N A L NPN silicon planar epitaxial transistor encapsulated in a 4-lead

transistor d 1991 ar

Contextual Info: b'lE D N AUER P H ILIP S /D IS C R E TE • b b S B 'm 00 2T 7 22 074 H A P X Product specification Philips Semiconductors BLY91C/01 VHF power transistor PIN CONFIGURATION DESCRIPTION NPN silicon planar epitaxial transistor designed for use in class-A, B and C operated mobile,

Contextual Info: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS Characteristic C ollector Base Voltage Sym bol BUT12 Rating Unit 850 V 1000 V 400 V 450 V V ceS BU T12A C ollecto r E m itter Voltage BUT12 V cE O BU T12A

BUT12A

Abstract: BUT12 PC100-W
Contextual Info: BUT12/12A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS ABSOLUTE MAXIMUM RATINGS C haracteristic C ollector Base Voltage Sym bol BUT12 Rating BU T12A Unit 850 V 1000 V 400 V 450 V V ceS C ollector E m itter Voltage BUT12 V cE O BU T12A

L25-M

Abstract: l25m BUT 1 BUT12
Contextual Info: BUT12/12 A NPN SILICON TRANSISTOR HIGH VOLTAGE SWITCH SWITCHING APPLICATIONS TO-220 ABSOLUTE MAXIMUM RATINGS Rating Symbol Characteristic C ollector-Base Voltage B U T12 850 VcES . B U T 12 A i C ollector Em itter Voltage : B U T 12 C ollector C urrent Pulse

AN5296 Application note CA3018

Abstract: CA3016 CA3018 12 Pin Metal Can CA3018A an5296 ca3018 an5296 AN5296 application note
Contextual Info: -GA3018, CA3018A lîC T Général Purpose Transistor Arrays November 1996 Features Description • Matched Monolithic General Purpose Transistors The CA3018 and CA3018A consist of four general purpose silicon NPN transistors on a common monolithic substrate.

Contextual Info: Ordering number : ENA1169A SFT1202 Bipolar Transistor http://onsemi.com 150V, 2A, Low VCE sat , NPN Single TP/TP-FA Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter Features • • • Adoption of FBET, MBIT process

Contextual Info: NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR BC372 ISSUE 2 - SEPT 93_ FEATURES * * 100 Volt VCE0 Gain of 8k at lc=250mA * lc=1 Amp ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL Collector-Base Voltage v CBO 100 V Collector-Emitter Voltage

Contextual Info: SOLITRON DEVICES INC flt. DeT| fl3t.flt.02 ODOESST D | 112 T - ^ 3 '¿>5 ELEMENT NUMBER HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL PLANAR POWER TRANSISTOR CONTACT METALLIZATION Base and emitter: > 5 0 ,0 0 0 À Aluminum FO RM ERLY 12 Collector: Polished Silicon

AN5296 Application note CA3018

Abstract: AN5296 Application of the CA3018 Integrated AN5296 Application of the CA3018 an5296 Harris CA3018 CA3018 CA3018A AN5296 application note an5296 ca3018 Darlington pair IC
Contextual Info: CA3018, CA3018A January 1999 File Number 338.5 GeneraI Purpose Transistor Arrays Features The CA3018 and CA3018A consist of four general purpose silicon NPN transistors on a common monolithic substrate. • Matched Monolithic General Purpose Transistors Two of the four transistors are connected in the Darlington

PMSS3904 Philips SOT323

Abstract: transistor p04 p04 transistor PMSS3904 MARKING CODE D4t
Contextual Info: b b S 3 * î3 1 Philips Semiconductors □ □ 2 5 CJ2E 2 7 7 H A P X N AMER PHILIPS/DISCRETE NPN general purpose transistor FE A T U R E S Product specification b?E D PMSS3904 P IN C O N F IG U R A T IO N • S-m ini package. D E S C R IP T IO N N P N transistor in a plastic S O T 3 2 3