NPN TRANSISTOR TO92 25V Search Results

NPN TRANSISTOR TO92 25V Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)

NPN TRANSISTOR TO92 25V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
BC368 Abstract: transistor npn Vcbo 25V Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR BC368 ISSUE 1 SEPT 93 FEATURES * 20 Volt VCEO * 1 Amp continuous current * Ptot= 800 mW E C B TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 25 V Collector-Emitter Voltage	Original	BC368 100mA* 500mA, 100MHz BC368 transistor npn Vcbo 25V	PDF
318MHZ Abstract: MPSH10 MPSH10P CTO-92 Contextual Info: NPN SILICON PLANAR RF TRANSISTOR MPSH10 ISSUE 3 NOVEMBER 94 FEATURES * High fT=650MHz * Maximum capacitance 0.7pF * Low noise < 5dB at 500MHz B E C TO92 REFER TO MPSH10P FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Emitter Voltage	Original	MPSH10 650MHz 500MHz MPSH10P 100MHz 318MHZ MPSH10 CTO-92	PDF
NPN Transistor TO92 25v Abstract: MPS6601 transistor mps6601 CTO-92 Contextual Info: NPN SILICON PLANAR MEDIUM POWER TRANSISTOR MPS6601 ISSUE 2 NOVEMBER 94 E B C TO92 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 25 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 4 V Continuous Collector Current	Original	MPS6601 100mA* 500mA, 100mA, 100MHz NPN Transistor TO92 25v MPS6601 transistor mps6601 CTO-92	PDF
2N3904 Abstract: transistor 2n3904 Contextual Info: KSP6520/6521 KSP6520/6521 Amplifier Transistor • Collector-Emitter Voltage: VCEO=25V • Collector Power Dissipation: PC max =625mW • Refer to 2N3904 for graphs TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	KSP6520/6521 625mW 2N3904 625mW KSP6521BU KSP6521NBU transistor 2n3904	PDF
QM5HL-24 Abstract: 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 MG20G6EL1 600V PNP pnp transistor 600V NPN Transistor 600V Contextual Info: Next W M.T O .C Semiconductors00-YDiscretes W 1 M.T . O W C W WW .100Y. M.T O W .C ZTX~Series Transistors .TW W product Detailed Ware available on: us. 100y. com. tw W 00Y specifications 1 M.T . M O W O C . .C WW .1Pol00YIc max Part No. Product No. Manufacturer	Original	10silicon ZTX653 3P/TO-92 NPN00Y ZTX689B ZTX690B NPN100Y AT-31033-TR1 QM5HL-24 2sk2850 transistor qm5hl 2SK2850 transistor pnp 600v. 1a. to 92 QM5HL24 MG20G6EL1 600V PNP pnp transistor 600V NPN Transistor 600V	PDF
Contextual Info: S AM S U N G SEMICONDUCTOR INC MPS6601 14E O \| 7^ 4142 0007331 3 \| NPN EPITAXIAL SILICON TRANSISTOR ' T-29-21 AMPLIFIER TRANSISTOR TO-92 • Collector-Emitter Voltage: Vceo=25V • Collector Dissipation: Pc max =625mW A B S O L U T E MAXIMUM RATINGS (Ta=25°C)	OCR Scan	MPS6601 625mW T-29-21	PDF
bc337 Abstract: bc337 fairchild BC33740BU BC33725TA BC33725BU BC337 NPN transistor Contextual Info: BC337/338 BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	BC337/338 BC327/BC328 BC337 BC338 BC337 bc337 fairchild BC33740BU BC33725TA BC33725BU BC337 NPN transistor	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER  FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA.  ORDERING INFORMATION Ordering Number Lead Free	Original	PN2222A 500mA. PN2222AL-AB3-R PN2222AG-AB3-R PN2222AL-T92-R PN2222AG-T92-R PN2222AL-T92-B PN2222AG-T92-B PN2222AL-T92-K PN2222AG-T92-K	PDF
NPN transistor 500ma TO-92 Abstract: PN2222A to-92 PN2222A-T92-B PN2222AL PN2222A equivalent PN2222A PN2222A-AB3-R PN2222AL-T92-B Contextual Info: UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. *Pb-free plating product number: PN2222AL ORDERING INFORMATION	Original	PN2222A 500mA. PN2222AL PN2222A-AB3-R PN2222AL-AB3-R PN2222A-T92-B PN2222AL-T92-B PN2222A-T92-K PN2222AL-T92-K OT-89 NPN transistor 500ma TO-92 PN2222A to-92 PN2222A-T92-B PN2222AL PN2222A equivalent PN2222A PN2222A-AB3-R PN2222AL-T92-B	PDF
BC33740BU Abstract: bc338 npn bc338 signal transistor bc337 fairchild BC338N Contextual Info: BC337/338 BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	BC337/338 BC327/BC328 BC337 BC338 BC33840TA BC33740BU npn bc338 signal transistor bc337 fairchild BC338N	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR  DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for	Original	HE8050 HE8050 HE8550 HE8050L-x-AB3-R HE8050G-x-AB3-R OT-89 HE8050L-x-AE3-R HE8050G-x-AE3-R OT-23 HE8050L-x-T92-B	PDF
PN2222AG Contextual Info: UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. ORDERING INFORMATION Ordering Number Lead Free	Original	PN2222A 500mA. PN2222AL-AB3-R PN2222AG-AB3-R PN2222AL-T92-B PN2222AG-T92-B PN2222AL-T92-K PN2222AG-T92-K OT-89 QW-R208-022 PN2222AG	PDF
PN2222AG Abstract: PN2222AL-T92-B PN2222A PN2222A-AB3-R PN2222A-T92-B 022D Contextual Info: UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER FEATURES * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. ORDERING INFORMATION Normal PN2222A-AB3-R PN2222A-T92-B	Original	PN2222A 500mA. PN2222A-AB3-R PN2222A-T92-B PN2222A-T92-K PN2222AL-AB3-R PN2222AL-T92-B PN2222AL-T92-K PN2222AG-AB3-R PN2222AG-T92-B PN2222AG PN2222AL-T92-B PN2222A PN2222A-AB3-R PN2222A-T92-B 022D	PDF
OF TRANSISTOR BC338 Abstract: BC33825TA BC338 Contextual Info: BC337/338 BC337/338 Switching and Amplifier Applications • Suitable for AF-Driver stages and low power output stages • Complement to BC327/BC328 TO-92 1 1. Collector 2. Base 3. Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted	Original	BC337/338 BC327/BC328 BC337 BC338 OF TRANSISTOR BC338 BC33825TA	PDF

PN2222AL Abstract: PN2222A PN2222A-AB3-R PN2222A-AB3-T PN2222A-T92-B QW-R208-022 IB215 PN2222A to-92 PN2222AL-AB3-R Contextual Info: UNISONIC TECHNOLOGIES CO., LTD PN2222A NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER 1 FEATURES SOT-89 * This device is for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 TO-92 *Pb-free plating product number: PN2222AL	Original	PN2222A OT-89 500mA. PN2222AL PN2222A-AB3-R PN2222AL-AB3-R PN2222A-AB3-T PN2222AL-AB3-T PN2222A-T92-B PN2222AL-T92-B PN2222AL PN2222A PN2222A-AB3-R PN2222A-AB3-T PN2222A-T92-B QW-R208-022 IB215 PN2222A to-92 PN2222AL-AB3-R	PDF
Contextual Info: SAMSUNG SEMICONDUCTOR INC MPS6560 D \| TTbmMZ 000732^ 5 NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AUDIO TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEo=25V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic Collector-Base Vbltage	OCR Scan	MPS6560 625mW T-29-21	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD HE8050 NPN SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL NPN TRANSISTOR  DESCRIPTION The UTC HE8050 is a low voltage high current small signal NPN transistor, designed for Class B push-pull 2W audio amplifier for	Original	HE8050 HE8050 HE8550 HE8050L-x-AB3-R HE8050G-x-AB3-R HE8050L-x-AE3-R HE8050G-x-AE3-R HE8050L-x-T92-B HE8050G-x-T92-B HE8050L-x-T92-K	PDF
Contextual Info: SAMSUNG SEMICONDUCTOR INC l^E 0 MPS6520 £ 7^134142 0 G Q 7 3 2 5 Ô \| NPN EPITAXIAL SILICON TRANSISTOR T-29-21 AMPLIFIER TRANSISTOR • Collector-Emitter Voltage: Veto=25V • Collector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) \ Characteristic	OCR Scan	MPS6520 T-29-21 625mW 2N3904	PDF
MURS1100 Abstract: SANYO 1000uF 35V 6912A CAPACITOR 47UF 25V ELECTROLYTIC 35mv1000ax c24 transistor FZT749 CAPACITOR ALUMINUM ELECTROLYTIC 10UF 25V 9v 500ma transformer 35MV100 Contextual Info: CPE Modem 9V to 16V INPUT C2 1uF 10V 13 R1 68k 2 D1 CMPSH-3 20 VP 19 VL BST ILIM COMP C1 8.2nF DH GND U1 MAX1865T R17 100k OUT 1 POK FB C3 0.1uF 17 16 DL C5 4.7uF 25V 18 LX VL C4 1000uF 25V MV-AX 15 T1 1:1:2 Lpri = 3.8uH VP4-0047 N1A 1/2 FDS 6912A R2 10 R3	Original	MAX1865T 1000uF VP4-0047 680uF 330uF FZT749 EC10QS06 MURS1100 FDS6912A MURS1100 SANYO 1000uF 35V 6912A CAPACITOR 47UF 25V ELECTROLYTIC 35mv1000ax c24 transistor FZT749 CAPACITOR ALUMINUM ELECTROLYTIC 10UF 25V 9v 500ma transformer 35MV100	PDF
2n4401 052 Abstract: 2N4401L 2N4401 transistor NPN Transistor TO92 25v 2N4401 2N4401L-T92-B 2N4401-T92-B 2N4401-T92-K B1I Transistor 3 pin 2N4401 NPN Switching Transistor Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N4401 NPN SILICON TRANSISTOR NPN GENERAL PURPOSE AMPLIFIER DESCRIPTION The UTC 2N4401 is designed for use as a medium power amplifier and switch requiring collector currents up to 500mA. 1 TO-92 *Pb-free plating product number: 2N4401L	Original	2N4401 2N4401 500mA. 2N4401L 2N4401-T92-B 2N4401L-T92-B 2N4401-T92-K 2N4401L-T92-K 2N4401L-T92-R QW-R201-052 2n4401 052 2N4401L 2N4401 transistor NPN Transistor TO92 25v 2N4401L-T92-B 2N4401-T92-B 2N4401-T92-K B1I Transistor 3 pin 2N4401 NPN Switching Transistor	PDF
s9013 Abstract: transistor TO-92 S9013 transistor s9013 s9013 transistor transistor S9013 to92 SS9013FBU S9013 TO92 SS9013 SS9013-HBU S9013 to-92 Contextual Info: SS9013 SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • High total power dissipation. PT=625mW High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector	Original	SS9013 625mW) 500mA) SS9012 SS9013 O-92-3 SS9013FBU SS9013FTA SS9013FTF s9013 transistor TO-92 S9013 transistor s9013 s9013 transistor transistor S9013 to92 S9013 TO92 SS9013-HBU S9013 to-92	PDF
BC337L Abstract: NPN Transistor TO92 300ma QW-R201-039 NPN transistor 500ma TO-92 BC338L Contextual Info: UNISONIC TECHNOLOGIES CO., LTD BC337/BC338 NPN SILICON TRANSISTOR SWITCHING AND AMPLIFIER APPLICATIONS FEATURES * Suitable for AF-Driver stages and low power output stages * Complement to UTC BC327/328 1 TO-92 ORDERING INFORMATION Ordering Number Lead Free	Original	BC337/BC338 BC327/328 BC337L-x-T92-B BC337G-x-T92-B BC337L-x-T92-K BC337G-x-T92-K BC337L-x-T92-R BC337G-x-T92-R BC338L-x-T92-B BC338G-x-T92-B BC337L NPN Transistor TO92 300ma QW-R201-039 NPN transistor 500ma TO-92 BC338L	PDF
ic LM 356 equivalent Contextual Info: SAMSUNG SEMICONDUCTOR INC MPS5172 IME D I 7^4142 0007321 0 I T ~ * J ~ 2 ,/ NPN EPITAXIAL SILICON TRANSISTOR AMPLIFIER TRANSISTÖR • Collector-Em itter Voltage: Veto =25V • C ollector Dissipation: Pc max =625mW ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Characteristic	OCR Scan	MPS5172 625mW MPSA10 ic LM 356 equivalent	PDF
transistor SS9013 Abstract: ss9012 cross Contextual Info: SS9013 SS9013 1W Output Amplifier of Potable Radios in Class B Push-pull Operation. • • • • High total power dissipation. PT=625mW High Collector Current. (IC=500mA) Complementary to SS9012 Excellent hFE linearity. TO-92 1 1. Emitter 2. Base 3. Collector	Original	SS9013 625mW) 500mA) SS9012 SS9013 O-92-3 transistor SS9013 ss9012 cross	PDF

NPN TRANSISTOR TO92 25V Search Results

NPN TRANSISTOR TO92 25V Result Highlights (5)

NPN TRANSISTOR TO92 25V Datasheets Context Search

BC368

318MHZ

NPN Transistor TO92 25v

2N3904

QM5HL-24

bc337

NPN transistor 500ma TO-92

BC33740BU

PN2222AG

PN2222AG

OF TRANSISTOR BC338

PN2222AL

MURS1100

2n4401 052

s9013

BC337L

ic LM 356 equivalent

transistor SS9013