NPN TRANSISTOR VCE 600V VBE 12V Search Results

transistor 2sc5353

Abstract: 2sa2035 TRANSISTOR SMD 13W HA2003 Bjt 60 w 600v .5A pnp transistor 800v TPC6D02 VS6 SOT23 400V dvc to 5V DC Regulator MSTM TOSHIBA
Contextual Info: Bipolar Power Transistor Dec, 2003 TOSHIBA Semiconductor Company Discrete Semiconductor Division 2003 Dec DP0540001_02 1/29 Application Application Map Map of of Low Low VCE sat VCE(sat) BJT BJT Process Standard Standard Feature High hFE Hi-Met 3rd NPN 400 to 1000

NPN Transistor 600V

Abstract: NPN Transistor 600V 0,2A 2SC5249 NPN 600V transistor transistor ,12v ,Ic 1A ,NPN vbe 12v, vce 600v NPN Transistor transistor Ic 1A datasheet NPN transistor 2SC5249 transistor 12v 1A NPN
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC5249 DESCRIPTION •Collector-Emitter Breakdown Voltage: V BR CEO= 600V(Min) ·High Switching Speed APPLICATIONS ·Designed for switching regulator and general purpose applications.

2SC5249

Abstract: FM20
Contextual Info: 2SC5249 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor A IB 1.5 PC 35(Tc=25°C) Tj Tstg µA 600min V hFE VCE=4V, IC=1A 20 to 40 A VCE(sat) IC=1A, IB=0.2A 0.5max W VBE(sat) IC=1A, IB=0.2A 1.2max V 150 °C fT VCE=12V, IE=–0.3A

2SC5249

Abstract: FM20 NPN Transistor 600V 0,2A vbe 12v, vce 600v NPN Transistor
Contextual Info: 2SC5249 Silicon NPN Triple Diffused Planar Transistor High Voltage Switchihg Transistor A IB 1.5 PC 35(Tc=25°C) Tj Tstg µA 600min V hFE VCE=4V, IC=1A 20 to 40 A VCE(sat) IC=1A, IB=0.2A 0.5max W VBE(sat) IC=1A, IB=0.2A 1.2max V 150 °C fT VCE=12V, IE=–0.3A

Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5367F HIGH VOLTAGE AND HIGH RELIABILITY TO-220F • High speed Switching • Wide Safe Operating Area • High Collector Base Voltage ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage

Contextual Info: NPN TRIPLE DIFFUSED PLANAR SILICON TRANSISTOR KSC5367 HIGH VOLTAGE AND HIGH RELIABILITY T O -2 2 0 • High speed Switching • Wide Safe Operating Area • High Collector Base Voltage ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit Collector Base Voltage

triacs bt 804 600v

Abstract: UR720 1N4465 AO110 diode 1N539 2N3750 Unitrode discrete databook 2N6138 CM104 unitrode 679 BRIDGE rectifier
Contextual Info: UNITRODE SEMICONDUCTOR DATABOOK 1976 C opyright 1976 U nitrode C orporation, W atertown, MA. A ll rights reserved. INTRODUCTION From its inception 16 years ago, Unitrode has acquired a reputa­ tion for maintaining an unusually high level of quality, perfor­

2SC4907

Abstract: FM20 vbe 12v, vce 600v NPN Transistor
Contextual Info: 2SC4907 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor VCEO 500 V IEBO VEBO 10 V V(BR)CEO 6(Pulse12) A hFE VCE=4V, IC=2A 10to30 Unit 1max mA VEB=10V 100max µA IC=25mA 500min V VCB=600V IB 2 A VCE(sat) IC=2A, IB=0.4A

vbe 12v, vce 600v NPN Transistor

Abstract: 2SC3831
Contextual Info: 2SC3831 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor 1max mA VCEO 500 V IEBO VEB=10V 100max µA 10 V V(BR)CEO IC=25mA 500min V 10(Pulse20) A hFE VCE=4V, IC=5A 10 to 30 IB 4 A VCE(sat) IC=5A, IB=1A 0.5max

vbe 12v, vce 600v NPN Transistor

Contextual Info: 2SC4907 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switchihg Transistor mA VEB=10V 100max µA IC=25mA 500min V VCEO 500 V IEBO VEBO 10 V V(BR)CEO 6(Pulse12) A hFE VCE=4V, IC=2A 10to30 IB 2 A VCE(sat) IC=2A, IB=0.4A 0.5max PC

transistor npn high speed switching 5A 600v

Abstract: 2SC4546 FM20 vbe 12v, vce 600v NPN Transistor
Contextual Info: 2SC4546 Silicon NPN Triple Diffused Planar Transistor High Voltage and Ultra-high Speed Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose 7(Pulse14) A IB 2 µA 400min V hFE VCE=4V, IC=3A 10 to 25 A VCE(sat) IC=3A, IB=0.6A

2SC4546

Abstract: FM20 vbe 12v, vce 600v NPN Transistor
Contextual Info: 2SC4546 Silicon NPN Triple Diffused Planar Transistor High Voltage and Ultra-high Speed Switchihg Transistor Application : Switching Regulator, Lighting Inverter and General Purpose 7(Pulse14) A IB 2 µA 400min V hFE VCE=4V, IC=3A 10 to 25 A VCE(sat) IC=3A, IB=0.6A

2SC3831

Abstract: vbe 12v, vce 600v NPN Transistor transistor npn 12V 1A Collector Current
Contextual Info: 2SC3831 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor VCB=600V VCEO 500 V IEBO VEB=10V 10 V V(BR)CEO 10(Pulse20) A hFE mA 100max µA IC=25mA 500min V VCE=4V, IC=5A 10 to 30 IB 4 A VCE(sat) IC=5A, IB=1A 0.5max

2SC3830

Abstract: vbe 12v, vce 600v NPN Transistor
Contextual Info: 2SC3830 Silicon NPN Triple Diffused Planar Transistor High Voltage and High Speed Switching Transistor Application : Switching Regulator and General Purpose •Absolute maximum ratings (Ta=25°C) External Dimensions MT-25(TO220) (Ta=25°C) 600 V ICBO VCB=600V

BZX85C12V

Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Contextual Info: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes

Contextual Info: KSC5502 NPN Planar Silicon Transistor High Voltage Power Switch Mode Application • • • Small Variance in Storage Time Wide Safe Operating Area Suitable for ElectronicBallast Application Equivalent Circuit C B 1 TO-220 E 1.Base Absolute Maximum Ratings *

J5502

Abstract: KSC5502TU KSC5502 transistor npn 12V 1A Collector Current NPN Transistor 600V TO-220 vbe 12v, vce 600v NPN Transistor
Contextual Info: KSC5502 NPN Planar Silicon Transistor High Voltage Power Switch Mode Application • Small Variance in Storage Time • Wide Safe Operating Area • Suitable for Electronic Ballast Application Equivalent Circuit C B 1 TO-220 E 1.Base Absolute Maximum Ratings *

Contextual Info: KSC5504D/KSC5504DT KSC5504D/KSC5504DT D2-PAK High Voltage High Speed Power Switch Application • • • • • Equivalent Circuit C 1 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

ksc5504

Abstract: NPN Transistor 600V TO-220
Contextual Info: KSC5504D/KSC5504DT KSC5504D/KSC5504DT D2-PAK High Voltage High Speed Power Switch Application • • • • • Equivalent Circuit C 1 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

TC10T

Contextual Info: KSC5502D/KSC5502DT KSC5502D/KSC5502DT D-PAK High Voltage Power Switch Switching Application • • • • • Equivalent Circuit C 1 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

TFR 600M

Abstract: ksc5502
Contextual Info: KSC5502D/KSC5502DT KSC5502D/KSC5502DT D-PAK High Voltage Power Switch Switching Application • • • • • Equivalent Circuit C 1 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time

C3679 equivalent

Abstract: transistor c3835 a1695 power transistor SK C4020 b1686 sk c4467 c4381 SK C5071 transistor c3856 npn C4020 TO220
Contextual Info: POWER TRANSISTORS SANKEN ELECTRIC CO.,LTD. Bulletin No T01EE0 July,2001 C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies.

d2494

Abstract: c4381 B1625 equivalent transistor a1668 transistor a1695 power transistor D2495 c3852a D1796 power transistor c5287 D2493
Contextual Info: C AU T I O N / WA R N I N G information in this publication has been carefully checked and is believed to be • The accurate; however, no responsibility is assumed for inaccuracies. reserves the right to make changes without further notice to any products herein in

TFR 600M

Abstract: IB180 200H
Contextual Info: KSC5502D/KSC5502DT KSC5502D/KSC5502DT D-PAK High Voltage Power Switch Switching Application • • • • • Equivalent Circuit C 1 Wide Safe Operating Area Built-in Free-Wheeling Diode Suitable for Electronic Ballast Application Small Variance in Storage Time