NPN TRANSISTOR VCEO 1000V Search Results

NPN TRANSISTOR VCEO 1000V Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TPCP8513	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8

NPN TRANSISTOR VCEO 1000V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
transistor VCE 1000V Abstract: NPN Transistor VCEO 1000V 220v 2a transistor NPN Transistor 450v 1A IC 1A datasheet transistor 1000V transistor Ic 1A datasheet NPN SGSF313PI 1000v, NPN SGSF31 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor SGSF313PI DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 450V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed to be used as switch in high efficency off-line	Original	SGSF313PI transistor VCE 1000V NPN Transistor VCEO 1000V 220v 2a transistor NPN Transistor 450v 1A IC 1A datasheet transistor 1000V transistor Ic 1A datasheet NPN SGSF313PI 1000v, NPN SGSF31	PDF
NPN Transistor VCEO 1000V Abstract: 220v 2a transistor transistor VCE 1000V transistor Ic 1A datasheet NPN 250V transistor npn 2a 1000v, NPN IC 1A datasheet transistor 1000V SGSF313 transistor VCEO 1000V Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor SGSF313 DESCRIPTION •Collector-Emitter Sustaining Voltage: VCEO SUS = 450V(Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed to be used as switch in high efficency off-line	Original	SGSF313 NPN Transistor VCEO 1000V 220v 2a transistor transistor VCE 1000V transistor Ic 1A datasheet NPN 250V transistor npn 2a 1000v, NPN IC 1A datasheet transistor 1000V SGSF313 transistor VCEO 1000V	PDF
npn 1000V 15A Abstract: NPN Transistor VCEO 1000V diode 1000V 10a MJW16010A transistor 1000V 6A transistor VCE 1000V transistor 1000V vbe 10v, vce 500v NPN Transistor transistor VCEO 1000V Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor MJW16010A DESCRIPTION •Low Collector Saturation Voltage ·Collector-Emitter Sustaining Voltage: VCEO SUS = 500V(Min) ·Wide Area of Safe Operation APPLICATIONS ·Designed for high-voltage, high-speed,power switching in	Original	MJW16010A npn 1000V 15A NPN Transistor VCEO 1000V diode 1000V 10a MJW16010A transistor 1000V 6A transistor VCE 1000V transistor 1000V vbe 10v, vce 500v NPN Transistor transistor VCEO 1000V	PDF
NPN Transistor VCEO 1000V Abstract: transistor 2sC3552 2SC3552 Contextual Info: Silicon Epitaxial Planar Transistor 2SC3552 GENERAL DESCRIPTION Silicon NPN high frequency, high power transistors in a plastic envelope, primarily for use in audio and general purpose MT-100 QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat VF tf	Original	2SC3552 MT-100 NPN Transistor VCEO 1000V transistor 2sC3552 2SC3552	PDF
BUT11AF Abstract: transistor VCBO 1000V IC 100mA 11AF BUT11F Contextual Info: Preliminary BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11F : BUT11AF 850	Original	BUT11F/11AF O-220F BUT11F BUT11AF BUT11AF transistor VCBO 1000V IC 100mA 11AF BUT11F	PDF
11AF Abstract: BUT11AF BUT11F Contextual Info: Preliminary BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11F : BUT11AF 850	Original	BUT11F/11AF O-220F BUT11F BUT11AF 11AF BUT11AF BUT11F	PDF
transistor VCE 1000V to220 Contextual Info: KSC5405 KSC5405 High Voltage Power Switch Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES Parameter Collector-Base Voltage Value 1000 Units V VCEO Collector-Emitter Voltage	Original	KSC5405 O-220 KSC5405TU O-220 transistor VCE 1000V to220	PDF
Contextual Info: , Dnc. J.£ii£U TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6754 Silicon NPN Power Transistor DESCRIPTION • Collector-Emitter Sustaining Voltage: VCEO(SUS)= 500(Min.) • High Switching Speed	Original	2N6754	PDF
11AF Abstract: BUT11AF BUT11F Contextual Info: BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11F : BUT11AF 850 1000 V V	Original	BUT11F/11AF O-220F BUT11F BUT11AF 150ner 11AF BUT11AF BUT11F	PDF
KSC5405 Contextual Info: KSC5405 KSC5405 High Voltage Power Switch Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES Parameter Collector-Base Voltage Value 1000 Units V VCEO Collector-Emitter Voltage	Original	KSC5405 O-220 KSC5405	PDF
KSC5405 Contextual Info: KSC5405 KSC5405 High Voltage Power Switch Switching Applications TO-220 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES Parameter Collector-Base Voltage Value 1000 Units V VCEO Collector-Emitter Voltage	Original	KSC5405 O-220 KSC5405	PDF
KSC5405F Contextual Info: KSC5405F KSC5405F High Voltage Power Switching Applications TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES Parameter Collector-Base Voltage Value 1000 Units V VCEO Collector-Emitter Voltage	Original	KSC5405F O-220F KSC5405F	PDF
BUT11AF Abstract: an7511 BUT11AFTU Contextual Info: BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11F : BUT11AF 850 1000 V V	Original	BUT11F/11AF O-220F BUT11F BUT11AF BUT11AFTU O-220F an7511	PDF
Contextual Info: KSC5405F KSC5405F High Voltage Power Switching Applications TO-220F 1 1.Base 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCES Parameter Collector-Base Voltage Value 1000 Units V VCEO Collector-Emitter Voltage	Original	KSC5405F O-220F KSC5405FTU O-220F	PDF

Contextual Info: BUT11F/11AF BUT11F/11AF High Voltage Power Switching Applications TO-220F 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11F : BUT11AF 850 1000 V V	Original	BUT11F/11AF O-220F BUT11F BUT11AF	PDF
BUT11 Abstract: BUT-11 Contextual Info: BUT11/11A BUT11/11A High Voltage Power Switching Applications 1 1.Base TO-220 2.Collector 3.Emitter NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11 : BUT11A 850 1000 V V Collector-Emitter Voltage	Original	BUT11/11A O-220 BUT11 BUT11A BUT11 BUT-11	PDF
MJW16010A Contextual Info: J , U na. C/ TELEPHONE: 973 376-2922 (212)227-6005 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 usA MJW16010A Silicon NPN Power Transistor DESCRIPTION • Low Collector Saturation Voltage • Collector-Emitter Sustaining Voltage: VCEO(SUS) = 500V(Min) Wide Area of Safe Operation	Original	MJW16010A T100r MJW16010A	PDF
NPN 350W Abstract: powertech NPN Transistor VCEO 1000V CO111 Contextual Info: "BIG IDEAS IN BIG POWER” PowerTech • 500 AMPERES L R -1 0 0 2 SILICON NPN TRANSISTOR ABSOLUTE MAXIMUM RATINGS LR-10Q2 SYMBOL Collector-Base Voltage VC 80 100V Collector-Emitter Voltage VCEO 80V Emitter-Base Voltage vebo 10V Peak Collector Current >CM*	OCR Scan	LR-10Q2 -650C LPH-150 SYMBOL500 200ma NPN 350W powertech NPN Transistor VCEO 1000V CO111	PDF
BUT11A1 Abstract: BUT-11 BUT11A CIRCUIT BUT11 BUT11A Contextual Info: BUT11/11A BUT11/11A High Voltage Power Switching Applications TO-220 1 NPN Silicon Transistor 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO Parameter Value Units : BUT11 : BUT11A 850 1000 V V Collector-Emitter Voltage	Original	BUT11/11A O-220 BUT11 BUT11A BUT11A1 BUT-11 BUT11A CIRCUIT BUT11 BUT11A	PDF
Contextual Info: “BIG IDEAS IN big pow er” wmm m PowerTecn 500 AMPERES LR-1002 SILICON NPN TRANSISTOR ABSOLUTE MAXIMUM RATINGS LR-1002 SYMBOL Col lector-Base Voltage VCBO 100V Collector-Emitter Voltage VCEO Emitter-Base Voltage vebo 80 V 10V Peak Collector Current •c m *	OCR Scan	LR-1002 -650C LPH-150 tC-100	PDF
2SC2688 Abstract: NPN Transistor VCEO 1000V 2SC2688L QW-R204-023 NPN SILICON TRANSISTOR Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF	Original	2SC2688 2SC2688 2300pF) 50MHz -10mA) 2SC2688L-x-T60-K 2SC2688G-x-T60-K O-126 QW-R204-023 NPN Transistor VCEO 1000V 2SC2688L NPN SILICON TRANSISTOR	PDF
2SC2688 Abstract: NPN Transistor VCEO 1000V TRANSISTOR 023 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2SC2688 NPN SILICON TRANSISTOR NPN SILICON TRANSISTOR DESCRIPTION The UTC 2SC2688 is designed for use in Color TV chroma output circuits. FEATURES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF	Original	2SC2688 2SC2688 2300pF) 50MHz -10mA) 2SC2688L-x-T60-K 2SC2688G-x-T60-K 2SC2688L-x-T6C-K 2SC2688G-x-T6C-K O-126 NPN Transistor VCEO 1000V TRANSISTOR 023	PDF
NTE2311 Abstract: npn 1000V 15A NPN Transistor VCEO 1000V Contextual Info: NTE2311 Silicon NPN Transistor High Voltage, High Speed Switch Description: The NTE2311 is a silicon NPN transistor in a TO218 type case designed for use in high voltage, high speed switching applications. Features: D High Blocking Capability: VCEX = 1000V	Original	NTE2311 NTE2311 npn 1000V 15A NPN Transistor VCEO 1000V	PDF
2sc2688 Contextual Info: UNISONICTECHNOLOGIESCO., LTD 2SC2688 NPN SILICON TRANSISTOR N PN SI LI CON T RAN SI ST OR ̈ DESCRI PT I ON The UTC 2SC2688 is designed for use in Color TV chroma output circuits. ̈ FEAT U RES * High Electrostatic-Discharge-Resistance. ESDR: 1000V TYP. E-B reverse bias, C=2300pF	Original	2SC2688 2SC2688 2300pF) 50MHz -10mA) 2SC2688L-x-T60-K 2SC2688G-x-T60-K 2SC2688L-x-T6C-K 2SC2688G-x-T6C-K O-126	PDF

NPN TRANSISTOR VCEO 1000V Search Results

NPN TRANSISTOR VCEO 1000V Result Highlights (5)

NPN TRANSISTOR VCEO 1000V Datasheets Context Search

transistor VCE 1000V

NPN Transistor VCEO 1000V

npn 1000V 15A

NPN Transistor VCEO 1000V

BUT11AF

11AF

transistor VCE 1000V to220

11AF

KSC5405

KSC5405

KSC5405F

BUT11AF

BUT11

MJW16010A

NPN 350W

BUT11A1

2SC2688

2SC2688

NTE2311

2sc2688