NPN TRANSISTOR VCEO 80V 100V Search Results

NPN TRANSISTOR VCEO 80V 100V Result Highlights (5)

Part	Manufacturer	Description
2SC6026MFV	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=0.15 A / hFE=120~400 / VCE(sat)=0.25 V / SOT-723
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TPCP8515	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8
TTC021	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini
2SC5198	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N)

NPN TRANSISTOR VCEO 80V 100V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
NTE56 Contextual Info: NTE56 Silicon NPN Transistor High Gain Switch and Pass Regulator Absolute Maximum Ratings: Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V Collector–Base Voltage, VCB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100V	Original	NTE56 NTE56	PDF
datasheet ic 331 Abstract: 331 transistor NPN/transistor C 331 NTE56 Contextual Info: NTE56 Silicon NPN Transistor High Gain Switch and Pass Regulator Absolute Maximum Ratings: TA = +25°C unless otherwise specified Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V	Original	NTE56 datasheet ic 331 331 transistor NPN/transistor C 331 NTE56	PDF
2sd1733 Contextual Info: 2SD1898 / 2SD1733 Datasheet NPN 1.0A 80V Middle Power Transistor lOutline Parameter Value VCEO IC 80V 1.0A MPT3 Collector CPT3 Base Collector Emitter lFeatures 1 Suitable for Middle Power Driver 2) Complementary PNP Types : 2SB1260 / 2SB1181 3) Low VCE sat)	Original	2SD1898 2SD1733 2SB1260 2SB1181 500mA/20mA) 2SD1898 SC-62) OT-89> SC-63) 2sd1733	PDF
NPN Transistor VCEO 80V 100V Abstract: 2SD1733 NPN Transistor VCEO 80V 100V hfe 100 Contextual Info: Transistors SMD Type Power Transistor 2SD1733 TO-252 Features 6.50 +0.2 5.30-0.2 High VCEO, VCEO=80V . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High IC, IC=1A DC . NPN silicon transistor +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15	Original	2SD1733 O-252 500mA -50mA, 100MHz NPN Transistor VCEO 80V 100V 2SD1733 NPN Transistor VCEO 80V 100V hfe 100	PDF
Contextual Info: Transistors SMD Type Product specification 2SD1733 TO-252 Features 6.50 +0.2 5.30-0.2 High VCEO, VCEO=80V . +0.15 1.50 -0.15 +0.15 -0.15 Unit: mm 2.30 +0.1 -0.1 +0.8 0.50-0.7 High IC, IC=1A DC . NPN silicon transistor +0.1 0.60-0.1 2.3 3 .8 0 +0.15 5.55 -0.15	Original	2SD1733 O-252 500mA -50mA, 100MHz	PDF
NPN Transistor VCEO 80V 100V Abstract: 2N4239 LE17 Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4239 • VCBO=100V Min , VCEO=80V(Min) • Hermetic TO-39 Metal package. • Ideally suited for General Purpose and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)	Original	2N4239 O-205AD) NPN Transistor VCEO 80V 100V 2N4239 LE17	PDF
Contextual Info: SILICON PLANAR EPITAXIAL NPN TRANSISTOR 2N4239 • VCBO=100V Min , VCEO=80V(Min) • Hermetic TO-39 Metal package. • Ideally suited for General Purpose and Amplifier Applications • Screening Options Available ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise stated)	Original	2N4239 34mW/Â O-205AD)	PDF
BDT93 Abstract: BDT95 NPN Transistor VCEO 80V 100V Audio Output Transistor Amplifier BDT91 NPN Transistor VCEO 80V 100V DC Current gain 100 ftb200 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Power Transistor BDT91/93/95 DESCRIPTION •DC Current Gain- hFE= 20~200@ IC= 4A ·Collector-Emitter Sustaining Voltage: VCEO SUS = 60V(Min)- BDT91; 80V(Min)- BDT93; 100V(Min)- BDT95 ·Complement to Type BDT92/94/96	Original	BDT91/93/95 BDT91; BDT93; BDT95 BDT92/94/96 BDT91 BDT93 BDT93 BDT95 NPN Transistor VCEO 80V 100V Audio Output Transistor Amplifier BDT91 NPN Transistor VCEO 80V 100V DC Current gain 100 ftb200	PDF
2STW4466 Abstract: 2STW1693 JESD97 Contextual Info: 2STW4466 High power NPN epitaxial planar bipolar transistor Features • High breakdown voltage VCEO = 80V ■ Complementary to 2STW1693 ■ Typical ft = 20MHz ■ Fully characterized at 150 oC Applications ■ 3 2 Audio power amplifier 1 TO-247 Description	Original	2STW4466 2STW1693 20MHz O-247 2STW4466 2STW1693 JESD97	PDF
NPN 350W Abstract: powertech NPN Transistor VCEO 1000V CO111 Contextual Info: "BIG IDEAS IN BIG POWER” PowerTech • 500 AMPERES L R -1 0 0 2 SILICON NPN TRANSISTOR ABSOLUTE MAXIMUM RATINGS LR-10Q2 SYMBOL Collector-Base Voltage VC 80 100V Collector-Emitter Voltage VCEO 80V Emitter-Base Voltage vebo 10V Peak Collector Current >CM*	OCR Scan	LR-10Q2 -650C LPH-150 SYMBOL500 200ma NPN 350W powertech NPN Transistor VCEO 1000V CO111	PDF
NPN Transistor VCEO 80V 100V Abstract: NTE22 Contextual Info: NTE22 Silicon NPN Transistor AF PO, General Purpose Amp, Driver Features: D High Breakdown Voltage: VCEO = 80V D Large IC Capacity: IC = 1A DC D Good hFE Linearity D Low Collector Saturation Voltage Applications: D Medium Power Output Stages D High–Voltage Drivers	Original	NTE22 NPN Transistor VCEO 80V 100V NTE22	PDF
NTE72 Contextual Info: NTE72 Silicon NPN Transistor High Current Amp, Fast Switch Features: D High Power: 100W @ TC = +50°C, VCE = 40V D High Voltage: VCEO = 80V Min D High Current Saturation Voltage: VCE sat = 1.5V @ 10A D High Frequency: fT = 30MHz Min D Isolated Collector Package, No Isolating hardware Required	Original	NTE72 30MHz 20MHz NTE72	PDF
Contextual Info: BSV64 MECHANICAL DATA Dimensions in mm inches SILICON NPN PLANAR TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. • VCBO = 100V • VCEO = 60V	Original	BSV64 35MHz	PDF
NPN Transistor VCEO 80V 100V Abstract: BSV64 Contextual Info: BSV64 MECHANICAL DATA Dimensions in mm inches SILICON NPN PLANAR TRANSISTOR 8.89 (0.35) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 4.19 (0.165) 4.95 (0.195) FEATURES 12.70 (0.500) min. 0.89 max. (0.035) 7.75 (0.305) 8.51 (0.335) dia. • VCBO = 100V • VCEO = 60V	Original	BSV64 35MHz NPN Transistor VCEO 80V 100V BSV64	PDF

BDV66B Abstract: BDV66A BDV67A BDV66 Multicomp, BDV66B BDV67B NPN Transistor VCEO 80V 100V DARLINGTON Multicomp, BDV67B TO-247 NPN SILICON POWER TRANSISTORS Contextual Info: BDV66, 67 Darlington Transistors Features: • Collector-Emitter sustaining voltage VCEO sus = 80V (Minimum) - BDV66A, BDV67A = 100V (Minimum) - BDV66B, BDV67B • Collector-Emitter saturation voltage VCE(sat) = 2.0V (Maximum) at IC = 10A • Monolithic construction with Built-in Base-Emitter Shunt Resistor.	Original	BDV66, BDV66A, BDV67A BDV66B, BDV67B BDV66A BDV66B BDV66B BDV66A BDV67A BDV66 Multicomp, BDV66B BDV67B NPN Transistor VCEO 80V 100V DARLINGTON Multicomp, BDV67B TO-247 NPN SILICON POWER TRANSISTORS	PDF
NPN Transistor VCEO 80V 100V Abstract: KSE182 NPN Transistor VCEO 80V 100V hfe 100 KSE180 KSE181 80 V NPN epitaxial silicon transistor NPN Transistor VCEO 80V 100V DC Current gain 100 transistor 182 kse18 Contextual Info: KSE180/181/182 NPN EPITAXIAL SILICON TRANSISTOR DESIGNED FOR LOW POWER AUDIO AMPLIFIER AND LOW CURRENT HIGH SPEED SWITCHING APPLICATIONS TO-126 ABSOLUTE MAXIMUM RATINGS Characteristic Symbol Rating Unit 60 V : KSE181 80 V : KSE182 100 V : KSE180 40 V : KSE181	Original	KSE180/181/182 O-126 KSE181 KSE182 KSE180 100mA 500mA NPN Transistor VCEO 80V 100V KSE182 NPN Transistor VCEO 80V 100V hfe 100 KSE180 KSE181 80 V NPN epitaxial silicon transistor NPN Transistor VCEO 80V 100V DC Current gain 100 transistor 182 kse18	PDF
BDX67 Abstract: npn 120v 10a transistor transistor bdx67 BDX66 NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON BDX67C BDX67B darlington power transistor 10a transistor bdx66 Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain: hFE= 1000 Min @ IC= 10A ·Low Saturation Voltage ·Complement to Type BDX66/A/B/C APPLICATIONS ·Designed for audio output stages and general amplifier	Original	BDX66/A/B/C BDX67 BDX67C BDX67A BDX67B BDX67 npn 120v 10a transistor transistor bdx67 BDX66 NPN Transistor VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON BDX67C BDX67B darlington power transistor 10a transistor bdx66	PDF
NPN Transistor VCEO 80V 100V Abstract: BUX77 Contextual Info: BUX77 MECHANICAL DATA Dimensions in mm 6.35 0.250 8.64 (0.340) 3.68 (0.145) rad. max. Bipolar NPN Device VCEO = 80V 2 IC = 5A 11.94 (0.470) 12.70 (0.500) 1 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 4.08(0.161) rad. 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97)	Original	BUX77 O213AA) NPN Transistor VCEO 80V 100V BUX77	PDF
NPN Transistor VCEO 80V 100V Abstract: BUX77X Contextual Info: BUX77X MECHANICAL DATA Dimensions in mm 6.35 0.250 8.64 (0.340) 3.68 (0.145) rad. max. Bipolar NPN Device VCEO = 80V 2 IC = 5A 11.94 (0.470) 12.70 (0.500) 1 0.71 (0.028) 0.86 (0.034) 3.61 (0.142) 4.08(0.161) rad. 14.48 (0.570) 14.99 (0.590) 24.13 (0.95)	Original	BUX77X O213AA) 20MHz NPN Transistor VCEO 80V 100V BUX77X	PDF
200W TRANSISTOR AUDIO AMPLIFIER Abstract: TRANSISTOR BDX NPN Transistor VCEO 80V 100V DARLINGTON 200w AUDIO AMPLIFIER 200w audio amplifier ic 200w audio power amplifier transistor BDX 65 200W POWER TRANSISTORS BDX 20a 200w power amplifier Contextual Info: BDX69A BDX69A BDX69B BDX69C SEME LAB NPN DARLINGTON POWER TRANSISTOR MECHANICAL DATA Dimensions in mm 26.6 max. 9.0 max. 2. 5 20.3 max. E 30.1 1 .0 B 16.9 39.5 max. 4.2 10.9 12.8 NPN Darlington transistors for audio output stages and general amplifier and switching applications.	Original	BDX69A BDX69B BDX69C BDX68, BDX68A, BDX68B, BDX68C. 300ms, BDX69" 200W TRANSISTOR AUDIO AMPLIFIER TRANSISTOR BDX NPN Transistor VCEO 80V 100V DARLINGTON 200w AUDIO AMPLIFIER 200w audio amplifier ic 200w audio power amplifier transistor BDX 65 200W POWER TRANSISTORS BDX 20a 200w power amplifier	PDF
TIP31 Abstract: TIP31C transistor tip31 NPN Transistor TO220 VCEO 80V 100V TIP31 NPN Transistor TIP31A NPN Transistor VCEO 80V 100V 3a npn to220 transistor TIP31B Silicon NPN Transistor TIP31 Contextual Info: TIP31/TIP31A/TIP31B/TIP31C NPN Epitaxial Silicon Transistor Features • Complementary to TIP32/TIP32A/TIP32B/TIP32C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	TIP31/TIP31A/TIP31B/TIP31C TIP32/TIP32A/TIP32B/TIP32C TIP31 TIP31A TIP31B TIP31C TIP31 TIP31C transistor tip31 NPN Transistor TO220 VCEO 80V 100V TIP31 NPN Transistor TIP31A NPN Transistor VCEO 80V 100V 3a npn to220 transistor TIP31B Silicon NPN Transistor TIP31	PDF
pin diagram of ic 4066 Abstract: tip131 TIP137 Darlington transistor TIP132 TIP136 TIP137 NPN Transistor TO220 VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON darlington complementary Contextual Info: TIP131, 132, 136, 137 Darlington Transistors Features: • Collector-Emitter sustaining voltageVCEO sus = 80V (Minimum) - TIP131, TIP136 = 100V (Minimum) - TIP132, TIP137 • Collector-Emitter saturation voltage VCE(sat) = 2.0V (Maximum) at IC = 4.0A • Monolithic construction with Built-in Base-Emitter shunt resistor.	Original	TIP131, TIP136 TIP132, TIP137 TIP131 TIP132 pin diagram of ic 4066 tip131 TIP137 Darlington transistor TIP132 TIP136 TIP137 NPN Transistor TO220 VCEO 80V 100V NPN Transistor VCEO 80V 100V DARLINGTON darlington complementary	PDF
TIP41 Abstract: tip41c TRANSISTOR TC 100 TIP41C EQUIVALENT NPN Transistor VCEO 80V 100V hfe 100 TRANSISTOR tip41c TIP41A TIP41B NPN Transistor TO220 VCEO 80V 100V NPN Transistor VCEO 80V 100V Contextual Info: TIP41/TIP41A/TIP41B/TIP41C NPN Epitaxial Silicon Transistor Features • Complementary to TIP42/TIP42A/TIP42B/TIP42C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Emitter Voltage: TIP41	Original	TIP41/TIP41A/TIP41B/TIP41C TIP42/TIP42A/TIP42B/TIP42C TIP41 TIP41A TIP41B TIP41C TIP41 tip41c TRANSISTOR TC 100 TIP41C EQUIVALENT NPN Transistor VCEO 80V 100V hfe 100 TRANSISTOR tip41c TIP41A TIP41B NPN Transistor TO220 VCEO 80V 100V NPN Transistor VCEO 80V 100V	PDF
NPN Transistor TO220 VCEO 80V 100V Abstract: TIP29 tip29c TIP29A NPN Transistor VCEO 80V 100V tip29 npn TIP29B NPN Transistor VCEO 80V 100V DC Current gain 100 Transistor tip29 TIP-29 Contextual Info: TIP29/TIP29A/TIP29B/TIP29C NPN Epitaxial Silicon Transistor Features • Complementary to TIP30/TIP30A/TIP30B/TIP30C 1. Base 2. Collector 3. Emitter Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage	Original	TIP29/TIP29A/TIP29B/TIP29C TIP30/TIP30A/TIP30B/TIP30C TIP29 TIP29A TIP29B TIP29C NPN Transistor TO220 VCEO 80V 100V TIP29 tip29c TIP29A NPN Transistor VCEO 80V 100V tip29 npn TIP29B NPN Transistor VCEO 80V 100V DC Current gain 100 Transistor tip29 TIP-29	PDF

NPN TRANSISTOR VCEO 80V 100V Search Results

NPN TRANSISTOR VCEO 80V 100V Result Highlights (5)

NPN TRANSISTOR VCEO 80V 100V Datasheets Context Search

NTE56

datasheet ic 331

2sd1733

NPN Transistor VCEO 80V 100V

NPN Transistor VCEO 80V 100V

BDT93

2STW4466

NPN 350W

NPN Transistor VCEO 80V 100V

NTE72

NPN Transistor VCEO 80V 100V

BDV66B

NPN Transistor VCEO 80V 100V

BDX67

NPN Transistor VCEO 80V 100V

NPN Transistor VCEO 80V 100V

200W TRANSISTOR AUDIO AMPLIFIER

TIP31

pin diagram of ic 4066

TIP41

NPN Transistor TO220 VCEO 80V 100V