NPN TRANSISTOR W5 Search Results

transistor npn 100w amplifier

Abstract: rf amplifier 100w NTE470 amplifier 100w w amplifier 30mhz
Contextual Info: NTE470 Silicon NPN Transistor RF Power Output Description: The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high–power linear amplifier from 2.0 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics:

NTE470

Abstract: transistor npn 100w amplifier transistor npn 100w amplifier TO-3P
Contextual Info: NTE470 Silicon NPN Transistor RF Power Output Description: The NTE470 is a silicon NPN RF transistor in a W52 type package designed primarily for application as a high–power linear amplifier from 2.0 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics:

Contextual Info: Philips Semiconductors ^ 5 3 ^ 3 1 0D31815 W5 APX Product specification NPN 5 GHz wideband transistor ^ BFR91 N AMER PHILIPS/DISCRETE DESCRIPTION bRE » PINNING NPN transistor in a plastic SOT37 envelope primarily intended for use in RF amplifiers such as in aerial

NTE338F

Abstract: 20W power transistor
Contextual Info: NTE338F Silicon NPN Transistor RF Power Amp, Driver Description: The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 20W PEP

NTE338F

Contextual Info: NTE338F Silicon NPN Transistor RF Power Amp, Driver Description: The NTE338F is a silicon NPN transistor in a W52K type package designed primarily for use as a power linear amplifier from 2 to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics: Output Power = 20W PEP

Z60N

Contextual Info: MITSUBISHI RF POWER TRANSISTOR bSMTflST QÜ17703 ÔTT 2SC4240 NPN EPITAXIAL PLANAR T Y P E DESCRIPTION 2SC 4240 is a silicon NPN epitaxial planar type transistor specifi­ cally designed for VHF power amplifier applications. OUTLINE DRAWING Dim ensions in mm

VK200 rfc

Abstract: vk200 vk200* FERROXCUBE vk200 rfc with 6 turns NTE320 T72 5VDC NTE320F vk200-20
Contextual Info: NTE320/NTE320F Silicon NPN RF Power Transistor 40W @ 175MHz Description: The NTE320 and NTE320F are silicon NPN power transistors designed for 12.5V VHF large–signal amplifier applications required in commercial and industrial equipment operating to 300MHz.

Contextual Info: RN4986FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4986FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Equivalent Circuit and Bias Resistor Values

Contextual Info: RN4986FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4986FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Equivalent Circuit and Bias Resistor Values

RN4986FS

Contextual Info: RN4986FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4986FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Equivalent Circuit and Bias Resistor Values

NTE335

Abstract: J341 NPN 250W NTE336 n-p-n r.f. power transistors J201 equivalent
Contextual Info: NTE335 & NTE336 Silicon NPN Transistor RF Power Output Description: The NTE335 and NTE336 are silicon NPN RF power transistors designed for power amplifier applications in industrial, commercial and amateur radio equipment to 30MHz. Features: D Specified 12.5V, 30MHz Characteristics:

Contextual Info: RN4986FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4986FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Q2 C C R1 fS6 R1 R2

Contextual Info: MP4301 T O SH IB A TOSHIBA POWER TRANSISTOR MODULE SILICON NPN EPITAXIAL TYPE DARLINGTON POWER TRANSISTOR 4 IN 1 MP4301 INDUSTRIAL APPLICATIONS Unit in mm HIGH POWER SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING. 31.5 ± 0.2

RN4986FS

Contextual Info: RN4986FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4986FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C C R1 fS6 R1 R2 B R2 B E 6 2 5 3 4

Contextual Info: MP4020 T O SH IB A TOSHIBA PO W ER TRANSISTOR M ODULE SILICON NPN EPITAXIAL TYPE DARLINGTON PO W ER TRANSISTOR 4 IN 1 MP4020 INDUSTRIAL APPLICATIONS Unit in mm HIGH PO W ER SWITCHING APPLICATIONS. H AM M ER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE LOAD SWITCHING.

lc 945 p transistor

Contextual Info: _ S852T/S852TW VfSMAY ▼ Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ M Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA.

S852T

Abstract: S852TW transistor d 945
Contextual Info: S852T/S852TW Vishay Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage

Contextual Info: S852T/S852TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage

transistor LC 945

Contextual Info: Temic S852TW Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. ^ Observe precautions for handling. M Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features • Low supply voltage

S852T

Abstract: S852TW
Contextual Info: S852T/S852TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage

Contextual Info: TSDF1250 / 1250R / 1250W / 1250RW VISHAY Vishay Semiconductors 12 GHz Silicon NPN Planar RF Transistor 2 1 SOT-143 Features • • • • Low power applications Very low noise figure High transition frequency fT = 12 GHz Excellent large signal behaviour

Contextual Info: T O SH IB A 2SC2668 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE PCT PROCESS 2SC2668 Unit in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. FM, RF, IF AMPLIFIER APLIFIER APPLICATIONS. • • Small Reverse Transfer Capacitance : Cre = 0.70pF (Typ.) Low Noise Figure

S852TW

Abstract: NPN transistor mhz s-parameter
Contextual Info: S852TW Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low-noise and high-gain broadband amplifiers at collector currents from 0.2 mA to 5 mA. Features D Low supply voltage D Low current consumption

PCR 406 J transistor

Abstract: transistor PCR 406 HM data smd transistor 44w transistor PCR 406 HM transistor pcr 406 transistor pcr 406 j 2N3375a smd transistor marking 28W s41b 2N3553
Contextual Info: MIL-s-19500/341B 2! M,KII 196S SUPERSEDING ML-s -19 W0/341A 2 November 1966 See 6.3. MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NpN, SI I.lCQN, HIGH. FREQUENCY, TYPES 2N3315, TX2N337S, 2N3553, TX2N3553, 2144440 AND TX2N4440 POWER ‘his smclficctim