NPN TRANSISTOR W6 Search Results

NTE352

Abstract: w65 transistor RF POWER TRANSISTOR NPN
Contextual Info: NTE352 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE352 is a silicon NPN transistor in a W65 type package designed primarily for use in 12.5V VHF large–signal power amplifier applications required in commercial and industrial FM equipment

NTE367

Abstract: 45W UHF
Contextual Info: NTE367 Silicon NPN Transistor RF Power Amplifier PO = 45W @ 512MHz Description: The NTE367 is a silicon NPN RF power transistor in a W65 type package designed for 12.5V UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512MHz.

nte352

Abstract: w65 transistor
Contextual Info: NTE352 Silicon NPN Transistor RF Power Amp, Driver Description: The NTE352 is a 12.5V Class C epitaxial silicon NPN transistor in a W65 type package designed primarily for VHF, FM communications. Diffused emitter resistors provide high VSWR capability under rated operating conditions. Internal impedance matching ensures optimum power gain and

TRANSISTOR SMD MARKING CODE w6

Abstract: SMD transistor code P npn transistor w6 NXP TRANSISTOR SMD MARKING CODE SOT23 PBHV8115T PBHV9115T TRANSISTOR SMD MARKING CODE 26 MARKING CODE SMD IC
Contextual Info: PBHV8115T 150 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 02 — 9 December 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.

TRANSISTOR SMD MARKING CODE w6

Abstract: npn transistor w6 PBHV8115T PBHV9115T
Contextual Info: PBHV8115T 150 V, 1 A NPN high-voltage low VCEsat BISS transistor Rev. 01 — 4 February 2008 Product data sheet 1. Product profile 1.1 General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT23 (TO-236AB) small Surface-Mounted Device (SMD) plastic package.

silicon npn planar rf transistor sot 143

Abstract: BFP67W
Contextual Info: BFP67W Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies.

Contextual Info: RN4987FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor built-in Transistor) RN4987FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 0.8±0.05 0.1±0.05 Q2 C R1 R1 R2 B 3 4

Contextual Info: RN4987FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4987FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C R1 R1 5 3 4 (E1) (B1) (C2) (E2) (B2)

Contextual Info: RN4987FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4987FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C 5 3 4 1. EMITTER1 2. BASE1 3. COLLECTOR2

RN4987FS

Contextual Info: RN4987FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4987FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C R1 R1 5 3 4 (E1) (B1) (C2) (E2) (B2)

cd 1191 cb

Abstract: CD 1691 CB
Contextual Info: wm m t BFP67/BFP67R/BFP67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain per­

Contextual Info: RN4987FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4987FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C R1 5 3 4 1. EMITTER1 2. BASE1 3. COLLECTOR2

RN4987FS

Contextual Info: RN4987FS TOSHIBA Transistor Silicon NPN•PNP Epitaxial Type PCT process (Bias Resistor Built-in Transistor) RN4987FS Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit: mm 1.0±0.05 Q2 C R1 5 3 4 1. EMITTER1 2. BASE1 3. COLLECTOR2

BFP67W

Abstract: Transistor C 1279
Contextual Info: BFP67/BFP67R/BFP67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.

BFP67W

Abstract: BFP67 BFP67R MICROWAVE TRANSISTOR
Contextual Info: BFP67/BFP67R/BFP67W Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.

DSA0037427

Abstract: pnp array SEMD13 npn transistor w6 IC-101
Contextual Info: SEMD13 NPN/PNP Silicon Digital Transistor Array Preliminary data • Switching circuit, inverter, interface circuit, driver circuit 4 • Two galvanic internal isolated NPN/PNP 5 3 Transistors in one package 6 2 • Built in bias resistor (R1=4.7kΩ, R2 =47kΩ)

2SC4247

Contextual Info: TOSHIBA 2SC4247 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC4247 Unit in mm TV TUNER, UHF OSCILLATOR APPLICATIONS. COMMON COLLECTOR • 2.1 ±0.1 Transition Frequency is High and Dependent on Current Excellently. MAXIMUM RATINGS (Ta = 25°C)

npn transistor w6

Contextual Info: h -y > y 7. $ /Transistors UMW6N FMW6 t i UMW6N/FMW6 T /K i ï Epitaxial Planar NPN Silicon Transistor ¡ÜJSi&*ii*iÄI/RF Amplifier • 1 K /\‘ 7 - J I / K h>v > v : * 2 / D u a l Mini-Mold Transistor ^ - v T \H £E I/D im en sio n s Unit : mm) FMW6 UMW6N

marking 557 SOT143

Contextual Info: Not for new design, this product will be obsoleted soon BFP67 / BFP67R / BFP67W Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • Small feedback capacitance Low noise figure High transition frequency Lead Pb -free component

Contextual Info: BFP67 / BFP67R / BFP67W VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features SOT-143 • Small feedback capacitance • Low noise figure • High transition frequency 3 4 2 1 Applications Low noise small signal amplifiers up to 2 GHz. This

marking 557 SOT143

Contextual Info: BFP67 / BFP67R / BFP67W VISHAY Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features SOT-143 • Small feedback capacitance • Low noise figure • High transition frequency 3 4 2 1 Applications Low noise small signal amplifiers up to 2 GHz. This

0746

Abstract: BFPW67 Transistor C 1279 BFP67W SOT-223 marking 717
Contextual Info: BFP67 / BFP67R / BFP67W Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • Small feedback capacitance Low noise figure High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

BFP67W

Abstract: BFP67 BFP67R SOT-143 MARKING 557
Contextual Info: BFP67 / BFP67R / BFP67W Vishay Semiconductors Silicon NPN Planar RF Transistor 2 1 Features • • • • • Small feedback capacitance Low noise figure High transition frequency Lead Pb -free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC

CD 1691 CB

Abstract: TELEFUNKEN O 670 VL sl2 357
Contextual Info: Temic BFP67W Semiconductors Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. M Applications Low noise small signal amplifiers up to 2 GHz. This tran­ sistor has superior noise figure and associated gain performance at UHF, VHF, and microwave frequencies.