NPN TRIPLE DIFFUSED 60V Search Results

KTD863 transistor

Abstract: NPN triple diffused 60V DC current gain 800 ktd863 ktb764
Contextual Info: SEMICONDUCTOR KTD863 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR VOLTAGE REGULATOR, RELAY, LAMP DRIVER, INDUSTRIAL USE B D FEATURES A ・High Voltage : VCEO=60V Min. . ・High Current : IC(Max.)=1A. P DEPTH:0.2 ・High Transition Frequency : fT=150MHz(Typ.).

driver transistor hfe 60

Abstract: KTB764 KTD863 KTD863 transistor
Contextual Info: SEMICONDUCTOR KTD863 TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR VOLTAGE REGULATOR, RELAY, RAMP DRIVER, INDUSTRIAL USE B D FEATURES A ᴌHigh Voltage : VCEO=60V Min. . ᴌHigh Current : IC(Max.)=1A. P DEPTH:0.2 ᴌHigh Transition Frequency : fT=150MHz(Typ.).

Contextual Info: SEMICONDUCTOR TIP31C TECHNICAL DATA TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES ・Complementary to TIP32C. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 100 V Collector-Emitter Voltage VCEO

2sd633

Abstract: 2sd634
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER 2SD633/634/635 INDUSTRIAL APPLICATIONS _ Unit in mm HIGH POWER SWITCHING APPLICATIONS. 10.3MAX. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. 03.6±O .2 FEATURES: • High DC Current Gain

transistor ph 30

Abstract: TIP31C TIP32C
Contextual Info: SEMICONDUCTOR TECHNICAL DATA TIP31C TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Complementary to TIP32C. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage 100 V V CBO Collector-Emitter Voltage

transistor 2n5330

Abstract: transistor c63 NPN Transistor VCEO 80V 100V
Contextual Info: Contran Devices. Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN TRIPLE DIFFUSED PLANAR POWER TRANSISTOR FORMERLY 44 CONTACT METALLIZATION Base and emitter: > 50,000 A Aluminum Collector: Gold (Polished silicon or "Chrome Nickel Silver” also available)

KTD2058 Y

Abstract: KTD2058 KTB1366
Contextual Info: _ SEMICONDUCTOR TECHNICAL DATA KOREA ELECTRONICS CO.,LTD. KTD2058 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Saturation Voltage : VcE Sat =1.0V(Max.) (IC=2A, IB=0.2A). • Complementary to KTB1366. MAXIMUM RATINGS (Ta=25°C)

KTD2058 Y

Abstract: KTD2058 KTB1366
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTD2058 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Saturation Voltage : VcE sat =1.0V(Max.) (Ic=2A, IB=0.2A). • Complementary to KTB1366. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage

KTB988

Abstract: KTD1351 300X300X2
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KTD1351 TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Low Saturation Voltage : VcE sat =1.0V(Max.) (Ic=2A, IB=0.2A). • Complementary to KTB988. MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector-Base Voltage

transistor 2SB673

Abstract: 2SB673 2SB675 2SD635 transistor 2SB673 equivalent transistor Toshiba transistor NPN Ic 50A 2SD633 AC75
Contextual Info: TOSHIBA 2SD633,2SD635 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD633, 2SD635 HIGH POWER SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS • High DC Current Gain : hjPE = 2000 Min. • Low Saturation Voltage :

TIP31C

Abstract: TIP32C
Contextual Info: SEMICONDUCTOR TIP31C TECHNICAL D A TA KOREA ELECTRONICS CO.,LTD. TRIPLE DIFFUSED NPN TRANSISTOR GENERAL PURPOSE APPLICATION. FEATURES • Complementary to TIP32C. MILLIMETERS MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT Collector-Base Voltage V CBO 100 V

2SD2136

Abstract: 957a 2SB1416
Contextual Info: Power Transistors 2SD213Ó 2SD2136 Silicon NPN Triple-Diffused Planar Type Package Dimensions Power Amplifier Complementary Pair with 2SB1416 • Features • High DC current gain hFE and good linearity • Low coliector-em itter saturation voltage (Vceisso)

Contextual Info: ra !» ? mm©©_ -Jfotttron MEDIUM TO HIGH VOLTAGE, FAST SWITCHING Devices. Inc NPN EPITAXIAL/TRIPLE DIFFUSED _PLANAR POWER TRANSISTOR * * FORMERLY 85 CHIP NUMBER CONTACT METALLIZATION B ase a n d em itter: > 30,000 A Aluminum

2SD1221

Contextual Info: TOSHIBA TRANSISTOR 2SD1221 SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. Unit in mm FEATURES: . Low Collector Saturation Voltage : vCE(sat)=0.4V(Typ.) (Ic=3A, Ir =0.3A) . High Power Dissipation : Pc=20W (Tc=25°C)

2SD2394

Abstract: 2SB1565
Contextual Info: 2SD2394 Transistors For Power Amplification 60V, 3A 2SD2394 zStructure NPN Silicon Triple Diffused Planar Transistor zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 8.0 2.8 1.2 1.3 14.0 5.0 15.0 zFeatures 1) Low VCE (sat). 2) Excellent electrical characteristics of DC current Gain hFE.

2SD633

Abstract: 2SB673 2SD635 transistor 2SB673 2SB675 AC75
Contextual Info: TO SH IBA 2SD633,2SD635 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD633, 2SD635INDUSTRIAL APPLICATIONS HIGH POWER SWITCHING APPLICATIONS Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 53.6 ±0.2 • • • High DC Current Gain : hjPE = 2000 Min.

solitrondevices

Abstract: SOLITRON 200V transistor npn 5a SDT1641-SDT1668
Contextual Info: 8368602 SOLITRON-DEVICES INC T5 95D 02841 DE |ö3bflbQB DQ0EÖ41 3 Devices, Inc. MEDIUM TO HIGH VOLTAGE, FAST SWITCHING NPN EPITAXIAL/TRIPLE DIFFUSED PLANAR POW ER TRANSISTOR FORMERLY 16 CHIP NUMBER CONTACT METALLIZATION B ase and emitter: > 30,000 A Aluminum

PIJ4123

Abstract: PU4123 DARLINGTON TRANSISTOR ARRAYS 2A J412 PU3123 PU4423
Contextual Info: 5ower T ransistor Arrays PU3123, PU4123, PU4423 »U3123, PU4123, PU4423 Package Dimensions PU3123 Unit: m m 4.2max. / 20.5max. lilicon NPN Triple-Diffused Planar Darlington Type 'ower Amplifier, Switching 0.8 ±0-l- [Features t^0*5±0-15 ^ 4 - 1 . 0 + 0.25

2sd2012 transistor

Abstract: 2sd2012 2SB1375
Contextual Info: TOSHIBA Discrete Semiconductors 2SD2012 Transistor Unit in mm Silicon NPN Triple Diffused Type Audio Frequency Power Amplifier Features • High DC Current Gain : 100 Min. • Low Saturation Voltage - VCE (sat) = 1.0V (Max.) (IC = 2A, IB = 0.2A) • High Power Dissipation

D2461

Abstract: transistor d2461
Contextual Info: 2SD2461 TOSHIBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS SILICON NPN TRIPLE DIFFUSED TYPE 2S D2461 Unit in mm Rn+n ? High DC Current Gain : hpj] i = 800~3200 Low Collector Saturation Voltage : V ^ e (Typ.) MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC

Contextual Info: 2SD1221 TOSHIBA TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE PCT PROCESS Unit in mm AUDIO FREQUENCY POWER AMPLIFIER APPLICATION. • • • Low Collector Saturation Voltage : Vc e (sat) = 0.4V (Typ.) High Power Dissipation P n = 9.0W Complementary to 2SB906

Contextual Info: 2SD2023 /Transistors 2SD2023 '> • ; = ! > h 7 > y ^ ^ npn Freq. Power Amp. Triple Diffused Planar NPN Silicon Transistor • ^ ff^ & H /D im e n s io n s Unit: mm • 1) VCE (sat) 'o 4 . 5 + 0.2 VcE(sat)=0.3V (Typ.) Ic / I b =2A /0.2A 2) hFE tlX l ' 5 0

SLA4312

Contextual Info: SANKEN ELECTRIC CO LTD • SLA4312 55E D • 7^0741 00Q122D 2 ^ HSAKJ Silicon NPN Triple Diffused Planar Silicon PNP Epitaxial Planar ■M axim um Ratings Rem oa=25”o JSpTtbQ} NPN PNP Unit C ollector-to-B ase Voltage VCBO 60 -6 0 V C ollector-to-E m itter Voltage

2sd2061

Contextual Info: h 7 > y X $ /Transistors 2SD2061 2SD2061 NPN ' > U = I > h 7 > ' / 7 $ 1K;Jl}j£lt:ft*^lllIff l/L o w Freq. Power Amp. • • <8* vryjv';V^J'^ Triple Diffused Planar NPN Silicon Transistor \j">i /Dim ensions Unit: mm 1) V c e (sat) VcE(sat)=0.3V (Typ.)