NPN VCE 100V Search Results

A08 transistor

Contextual Info: TSD965A Low Vcesat NPN Transistor TO-92 PRODUCT SUMMARY Pin Definition: 1. Emitter 2. Collector 3. Base BVCBO 100V BVCEO 20V IC 5A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.35V @ IC / IB = 3A / 100mA (Typ.) Excellent DC current gain characteristics

fmmt489

Contextual Info: Section 2: Bipolar Transistors _ Low Sc-'tusationTransistors up to S0 0 Volts SOT23 Low Saturation NPN Transistors up 1o 100V Pinout Details: 1-Collector, 2-Emitter, 3-Base V cbO V CEO VcE sat hFE lc Type Min Max at lc mA at VCE

3A 100V npn LOW SATURATION VOLTAGE

Abstract: TSD2098 TSD2098A
Contextual Info: TSD2098A Low Vcesat NPN Transistor SOT-89 PRODUCT SUMMARY Pin Definition: 1. Base 2. Collector 3. Emitter BVCBO 100V BVCEO 20V IC 5A VCE SAT Features ● ● Ordering Information Low VCE(SAT) 0.35V @ IC / IB = 3A / 100mA (Typ.) Excellent DC current gain characteristics

2sc4024

Abstract: FM20 DSA0016508
Contextual Info: 2SC4024 High hFE LOW VCE sat Silicon NPN Epitaxial Planar Transistor IEBO VEB=15V 10max µA V(BR)CEO IC=25mA 50min V VCE=4V, IC=1A 300 to 1600 3 A VCE(sat) IC=5A, IB=0.1A 0.5max V PC 35(Tc=25°C) W fT VCE=12V, IE=–0.5A 24typ MHz Tj 150 °C COB VCB=10V, f=1MHz

2SC4131

Abstract: transistor 2sc4131 VEBO-15V
Contextual Info: 2SC4131 LOW VCE sat Silicon NPN Epitaxial Planar Transistor V 60 to 360 VCE=1V, IC=5A IB 4 A VCE(sat) IC=5A, IB=80mA 0.5max PC 60(Tc=25°C) W VBE(sat) IC=5A, IB=80mA 1.2max V Tj 150 °C fT VCE=12V, IE=–1A 18typ MHz –55 to +150 °C COB VCB=10V, f=1MHz

FZT696B

Abstract: NPN Transistor VCEO 1000V transistor VCBO 1000V IC 100mA DSA003714 darlington NPN 1000V transistor
Contextual Info: SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT696B TYPICAL CHARACTERISTICS IC/IB=100 0.6 0.6 0.4 0.2 0.01 0.1 1 1.4 0.01 10 1 10 I+ - Collector Current Amps VCE(sat) v IC VCE(sat) v IC VCE=5V -55°C +25°C +100°C +175°C 1.6 1.5K 1K 0.8

UP1753

Abstract: UP1753-AA3-R UP1753L-AA3-R
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP1753 NPN SILICON TRANSISTOR HIGH CURRENT LOW VCE SAT TRANSISTOR DESCRIPTION The UTC UP1753 is specially designed to have high current and low VCE(SAT) to suit for power amplifier application and power switching application.

UP1753

Abstract: UP1753-AA3-R UP1753L-AA3-R NPN 1A 100V SOT-223
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP1753 NPN SILICON TRANSISTOR HIGH CURRENT LOW VCE SAT TRANSISTOR DESCRIPTION The UTC UP1753 is specially designed to have high current and low VCE(SAT) to suit for power amplifier application and power switching application.

20MH

Abstract: FMMT459 FMMT459TA FMMT459TC
Contextual Info: FMMT459 450V SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR SUMMARY VCEO=450V; VCE sat = 100mV; IC= 150mA DESCRIPTION This new high voltage tranistor provides users with very effiecient performance combining low VCE (sat) and Hfe to give extremely low on state

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP1753 NPN SILICON TRANSISTOR HIGH CURRENT LOW VCE SAT TRANSISTOR „ DESCRIPTION The UTC UP1753 is specially designed to have high current and low VCE(SAT) to suit for power amplifier application and power switching application.

2SD1223

Contextual Info: SILICON NPN EPITAXIAL TYPE 2SD1223 SWITCHING APPLICATIONS. HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS. POWER AMPLIFIER APPLICATIONS. Unit in mm S8MAX. FEATURES: . High DC Current Gain : hFE l =2000(Min.) (VCE=2V, Ic=lA) . Low Saturation Voltage : VcE(sat) = l->V(Max.) (Ic=3A)

UP1753

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UP1753 NPN SILICON TRANSISTOR HIGH CURRENT LOW VCE SAT TRANSISTOR  1 DESCRIPTION TO-252 The UTC UP1753 is specially designed to have high current and low VCE(SAT) to suit for power amplifier application and power switching application.

2scr375

Contextual Info: 2SCR375P Datasheet NPN 1.5A 120V Middle Power Transistor lOutline Parameter Value VCEO IC 120V 1.5A MPT3 Base Collector Emitter 2SCR375P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 2) Low VCE(sat) VCE(sat)=0.30V(Max.) (IC/IB=800mA/80mA)

Contextual Info: 2SCR372P Datasheet NPN 700mA 120V Middle Power Transistor lOutline Parameter Value VCEO IC 120V 700mA MPT3 Base Collector Emitter 2SCR372P SC-62 <SOT-89> lFeatures 1) Suitable for Middle Power Driver 3) Low VCE(sat) VCE(sat)=0.30V(Max.) (IC/IB=500mA/50mA)

ZXTN19100CZ

Abstract: TS16949 ZXTN19100CZTA ZXTP19100CZ
Contextual Info: ZXTN19100CZ 100V NPN medium power transistor in SOT89 Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 5.25A VCE(sat) < 65mV @ 1A RCE(sat) = 44m⍀ PD = 2.4W Complementary part number ZXTP19100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor

ZXTN25020DG

Abstract: TS16949 ZXTN25020DGTA ZXTP25020DG ON950 ZXTN25
Contextual Info: ZXTN25020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 7A VCE(sat) < 48mV @ 1A RCE(sat) = 31mΩ PD = 3.0W Complementary part number ZXTP25020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor

ZXTN25100DG

Abstract: ZXTN25 TS16949 ZXTN25100DGTA ZXTP19100CG
Contextual Info: ZXTN25100DG 100V NPN high gain transistor in SOT223 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 3A VCE(sat) < 100mV @ 1A RCE(sat) = 85m⍀ PD = 3.0W Complementary part number ZXTP19100CG Description C Packaged in the SOT223 outline this new low saturation NPN transistor

Contextual Info: ZXTN25020DG 20V NPN high gain transistor in SOT223 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 7A VCE(sat) < 48mV @ 1A RCE(sat) = 31mΩ PD = 3.0W Complementary part number ZXTP25020DG Description C Packaged in the SOT223 outline this new low saturation NPN transistor

Contextual Info: ZXTN25020DZ 20V NPN high gain transistor in SOT89 Summary BVCEX > 100V BVCEO > 20V BVECX > 6V IC cont = 6A VCE(sat) < 48mV @ 1A RCE(sat) = 30m⍀ PD = 2.4W Complementary part number ZXTP25020DZ Description C Packaged in the SOT89 outline this new low saturation 20V NPN

TS16949

Abstract: ZXTN25100DZ ZXTN25100DZTA ZXTP25100CZ
Contextual Info: ZXTN25100DZ 100V NPN high gain transistor in SOT89 Summary BVCEX > 180V BVCEO > 100V BVECO > 6V IC cont = 2.5A VCE(sat) < 100mV @ 1A RCE(sat) = 80m⍀ PD = 2.4W Complementary part number ZXTP25100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor

Zetex ZXTP19100CZ

Contextual Info: ZXTN19100CZ 100V NPN medium power transistor in SOT89 Summary BVCEX > 200V BVCEO > 100V BVECO > 5V IC cont = 5.25A VCE(sat) < 65mV @ 1A RCE(sat) = 44m⍀ PD = 2.4W Complementary part number ZXTP19100CZ Description C Packaged in the SOT89 outline this new low saturation NPN transistor

Contextual Info: Ordering number : ENA1836B PCP1208 Bipolar Transistor http://onsemi.com 200V, 0.7A Low VCE sat NPN Single PCP Features • • • • High allowable power dissipation • Halogen free compliance VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ.)@IC=0.35A

Contextual Info: Ordering number : ENA1836B PCP1208 Bipolar Transistor http://onsemi.com 200V, 0.7A Low VCE sat NPN Single PCP Features • • • • High allowable power dissipation • Halogen free compliance VCEO=200V, IC=0.7A Low collector-to-emitter saturation voltage VCE(sat)=0.115V(typ.)@IC=0.35A

DARLINGTON 3A 100V npn

Abstract: NTE2351 nte2352 SILICON COMPLEMENTARY transistors darlington
Contextual Info: NTE2351 NPN & NTE2352 (PNP) Silicon Complementary Transistors Darlington Power Amp, Switch Features: D High DC Current Gain: hFE (1) = 2000 Min @ VCE = 2V, IC = 1A D Low Saturation Voltage: VCE(sat) = 1.5V Max @ IC = 3A Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)