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    NPN VCES 1700V 8A Search Results

    NPN VCES 1700V 8A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    MX0912B251Y Rochester Electronics LLC MX0912B251Y - NPN Silicon RF Power Transistor (Ampleon Die) Visit Rochester Electronics LLC Buy
    CA3083Z-G Rochester Electronics LLC CA3083 - GENERAL PURPOSE HIGH CURRENT NPN TRANSISTOR ARRAY Visit Rochester Electronics LLC Buy
    CA3046 Rochester Electronics LLC RF Small Signal Bipolar Transistor, 0.05A I(C), 5-Element, Very High Frequency Band, Silicon, NPN, MS-001AA, MS-001AA, 14 PIN Visit Rochester Electronics LLC Buy
    ISL73096EHVF Renesas Electronics Corporation Radiation Hardened Ultra High Frequency NPN/PNP Transistor Arrays Visit Renesas Electronics Corporation

    NPN VCES 1700V 8A Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NTE2642 Silicon NPN Transistor Horizontal Deflection Output High Speed Switch TO3P Full Pack Features: D High Breakdown Voltage D High Reliability D High Speed Switching D Wide Area of Safe Operation ASO Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


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    PDF NTE2642

    8a 817 voltage

    Abstract: NTE2642 30a 1700v ic 817 pc 817 transistor VCE 1000V transistor VCEO 1000V DSA003703
    Text: NTE2642 Silicon NPN Transistor Horizontal Deflection Output High Speed Switch Features: D High Breakdown Voltage D High Reliability D High Speed Switching D Wide Area of Safe Operation ASO Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)


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    PDF NTE2642 8a 817 voltage NTE2642 30a 1700v ic 817 pc 817 transistor VCE 1000V transistor VCEO 1000V DSA003703

    PC817 example circuits

    Abstract: opto isolator pc817 m57962l dz4in1 pc817 circuit M57959L/M57962L optocoupler IC PC817 pin details M57962L Application Note schematic diagram inverter 12v to 24v 30a M57959L
    Text: Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 5.0 Driving IGBT Modules When using high power IGBT modules it is often desirable to completely isolate control circuits from the gate drive. A block diagram of this type of gate drive is


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    PDF 6V-18V, 100ns) M57994-01 PC817 example circuits opto isolator pc817 m57962l dz4in1 pc817 circuit M57959L/M57962L optocoupler IC PC817 pin details M57962L Application Note schematic diagram inverter 12v to 24v 30a M57959L

    2SC5407

    Abstract: npn vces 1700v 8a
    Text: Power Transistors 2SC5407 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm Parameter Symbol Ratings Unit Collector to base voltage VCBO 1700 V VCES 1700 V Collector to emitter voltage VCEO 600 V Emitter to base voltage VEBO


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    PDF 2SC5407 64kHz, 2SC5407 npn vces 1700v 8a

    Untitled

    Abstract: No abstract text available
    Text: HD1760JL High Voltage NPN Power Transistor for High Definition and New Super-Slim CRT Display PRELIMINARY DATA Features • STATE-OF-THE-ART TECHNOLOGY: DIFFUSED COLLECTOR “ENHANCED GENERATION“ EHVS1 ■ WIDER RANGE OF OPTIMUM DRIVE CONDITIONS ■ LESS SENSITIVE TO OPERATING


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    PDF HD1760JL O-264

    TO-264

    Abstract: HD1760JL JESD97
    Text: HD1760JL High Voltage NPN Power Transistor for High Definition and New Super-Slim CRT Display PRELIMINARY DATA Features • STATE-OF-THE-ART TECHNOLOGY: DIFFUSED COLLECTOR “ENHANCED GENERATION“ EHVS1 ■ WIDER RANGE OF OPTIMUM DRIVE CONDITIONS ■ LESS SENSITIVE TO OPERATING


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    PDF HD1760JL O-264 TO-264 HD1760JL JESD97

    using of damper in Horizontal Output Transistor

    Abstract: 2SD2524
    Text: Power Transistors 2SD2524 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm ● • Absolute Maximum Ratings Symbol Ratings Unit Collector to base voltage VCBO 1700 V Collector to emitter voltage VCES 1700 V Emitter to base voltage


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    PDF 2SD2524 using of damper in Horizontal Output Transistor 2SD2524

    Untitled

    Abstract: No abstract text available
    Text: Power Transistors 2SC5407 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 3.0±0.3 Symbol Ratings Unit Collector to base voltage VCBO 1700 V VCES 1700 V VCEO 600 V Emitter to base voltage VEBO 5 V Peak collector current ICP


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    PDF 2SC5407

    2SC5407

    Abstract: No abstract text available
    Text: Power Transistors 2SC5407 Silicon NPN triple diffusion mesa type For horizontal deflection output M Di ain sc te on na tin nc ue e/ d Unit: mm Parameter Symbol Ratings Unit Collector to base voltage VCBO 1700 V 1700 V 600 V 5 V 20 A 15 A 8 A VCES Collector to emitter voltage


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    PDF 2SC5407 2SC5407

    HD1760JL

    Abstract: JESD97
    Text: HD1760JL Very high voltage NPN power transistor for high definition and slim CRT display Features • State-of-the-art technology: diffused collector “enhanced generation“ EHVS1 ■ Wide range of optimum drive conditions ■ Stable performance versus operating


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    PDF HD1760JL O-264 HD1760JL JESD97

    2SD2524

    Abstract: No abstract text available
    Text: Power Transistors 2SD2524 Silicon NPN triple diffusion mesa type For horizontal deflection output Unit: mm 10.0 M Di ain sc te on na tin nc ue e/ d • Absolute Maximum Ratings Symbol Ratings Unit Collector to base voltage VCBO 1700 V Collector to emitter voltage


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    PDF 2SD2524 2SD2524

    2SD2524

    Abstract: 2sd25
    Text: Power Transistors 2SD2524 Silicon NPN triple diffusion mesa type For horizontal deflection output M Di ain sc te on na tin nc ue e/ d Unit: mm ● • Absolute Maximum Ratings Symbol Ratings Unit Collector to base voltage VCBO 1700 V Collector to emitter voltage


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    PDF 2SD2524 2SD2524 2sd25

    HD1760JL

    Abstract: JESD97 HD1760
    Text: HD1760JL Very high voltage NPN power transistor for high definition and slim CRT display Features • State-of-the-art technology: diffused collector “enhanced generation“ EHVS1 ■ Wide range of optimum drive conditions ■ Stable performance versus operating


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    PDF HD1760JL O-264 HD1760JL JESD97 HD1760

    P-Channel IGBT

    Abstract: PTIGBT 600V 10A RUF resistor calculation of IGBT snubber mosfet 8A 900V TO-220 thyristor 5a 600v cross reference Drive Base BJT N-Channel jfet 100V depletion vtom Trench MOSFET Termination Structure
    Text: Application Note 9016 February, 2001 IGBT Basics 1 by K.S. Oh CONTENTS 1. Introduction. 2. Device structure and operation .


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    SKiip 83 EC 125 T1

    Abstract: SKiiP 82 AC 12 T1 SKiiP 81 AN 15 T1 semikron SKHI 22 SPICE MODEL semikron skiip 32 nab 12 T7 SKiip 83 EC 12 1 T1 SKiiP 24 NAB 063 T12 skiip 83 ac 128 BUZ78 equivalent SKIIP 81 AC 12 I T1
    Text: 0 Betriebsweise von Leistungshalbleitern Betriebsweise von Leistungshalbleitern 0.1 Elementare Schaltvorgänge Leistungshalbleiter arbeiten bis auf wenige Sonderanwendungen im Schalterbetrieb. Daraus resultieren grundlegende Prinzipien und Funktionsweisen, die in allen leistungselektronischen


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    schematic diagram atx Power supply 500w

    Abstract: pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS
    Text: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 Digital Signal Processors, iCoupler , iMEMS® and iSensor . . . . . 805, 2707, 2768-2769 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-568 RF Connectors . . . . . . . . . . . . . . . . . . . . . . Pages 454-455


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    PDF P462-ND P463-ND LNG295LFCP2U LNG395MFTP5U US2011) schematic diagram atx Power supply 500w pioneer PAL 012A 1000w inverter PURE SINE WAVE schematic diagram 600va numeric ups circuit diagrams winbond bios 25064 TLE 9180 infineon smsc MEC 1300 nu TBE schematic diagram inverter 2000w DK55 circuit diagram of luminous 600va UPS

    Transistor 2SA 2SB 2SC 2SD

    Abstract: S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346
    Text: TO-126 IS , PO W ER MOLD PACKAGE TRANSISTOR SELECTION GUIDE • TO-126 (IS) ▲ PW MOLD Darlington A PW MOLD • POWER MOLD TO-126 (IS) Darlington TO-126 OS) H A T0-220AB, TO-220 (IS) PACKAGE TRANSISTOR S E L ECTION G UIDE r— " ~ '''- Y C E O ( V ) lc (A)


    OCR Scan
    PDF O-126 O-126 T0-220AB, O-220 2SC4544 2SC4448 2SC3612 2BC4201 Transistor 2SA 2SB 2SC 2SD S-AU27M S2000A inverter P4005 S-AV21H S-AU27 3182N 2sb 834 transistor Transistor 2SC4288A Drive IC 2SC3346