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    NPTB00025 Price and Stock

    MACOM NPTB00025B

    RF MOSFET HEMT 28V
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    DigiKey NPTB00025B Tray 30
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    Mouser Electronics NPTB00025B 39
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    Richardson RFPD NPTB00025B 30
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    MACOM NPTB00025AB

    RF MOSFET GAN AC360B-2
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    DigiKey NPTB00025AB Bulk 30
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    Mouser Electronics NPTB00025AB
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    NPTB00025 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Type PDF
    NPTB00025B M/A-Com Discrete Semiconductor Products - Transistors - FETs, MOSFETs - RF - HEMT N-CH 28V 25W DC-4000MHZ Original PDF

    NPTB00025 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    NPTB00025

    Abstract: NPTB00025B AC200BM-F2 AC200B EAR99 JESD22-A114 JESD22-A115 UPW1C151MED ATC600F1R2AT
    Text: NPTB00025 Datasheet Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz


    Original     		PDF NPTB00025 4000MHz 500-1000MHz EAR99 225mA, 3000MHz, NDS-006 NPTB00025B AC200BM-F2 AC200B JESD22-A114 JESD22-A115 UPW1C151MED ATC600F1R2AT

    Untitled

    Abstract: No abstract text available
    Text: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz


    Original     		PDF NPTB00025 4000MHz 500-1000MHz EAR99 225mA, 3000MHz, NDS-006

    GRM188R72A104KA35D

    Abstract: GaN Bias 25 watt NPTB00025 12101C105KAT2A atc600f rl0603fr UPW1C151MED 06031C103KAT2A ELXY630ELL271MK25S NBD-019
    Text: AD-001 AD-001: Nitronex NPTB00025 GaN HEMT Tuned for 2.11 to 2.17GHz Application board AD-001 with a Nitronex NPTB00025 GaN HEMT device outputs approximately 3 Watts of average RF power under single carrier WCDMA modulation1 with approximately 12.5.0 dB gain, 30+% drain efficiency and an ACPR better then 35dBc. All measurements were collected at 2.11 to 2.17GHz with a drain bias of


    Original     		PDF AD-001 AD-001: NPTB00025 17GHz AD-001 35dBc. 17GHz 250mA. GRM188R72A104KA35D GaN Bias 25 watt 12101C105KAT2A atc600f rl0603fr UPW1C151MED 06031C103KAT2A ELXY630ELL271MK25S NBD-019

    Untitled

    Abstract: No abstract text available
    Text: NPTB00025 Gallium Nitride 28V, 25W RF Power Transistor Built using the SIGANTIC NRF1 process - A proprietary GaN-on-Silicon technology FEATURES • Optimized for broadband operation from DC - 4000MHz • 25W P3dB CW narrowband power • 10W P3dB CW broadband power from 500-1000MHz


    Original     		PDF NPTB00025 4000MHz 500-1000MHz EAR99 225mA, 3000MHz, NDS-006

    NPTB00004

    Abstract: NPT25015 NPT1012 NPT1004 NPTB00025 NPT1010 NPTB00050 AC200B NPT1007 NPT25100
    Text: Product Selection Guide Our GaN RF power transistors offer higher power densities, higher efficiency, and broader bandwidth than the competition, making them a good choice for military and commercial wireless and infrastructure applications. Visit www.nitronex.com for


    Original     		PDF NPTB00004 PO150S NPT25015 NPT35015 NPT1012 2xNPT25100 NPTB00004 NPT25015 NPT1012 NPT1004 NPTB00025 NPT1010 NPTB00050 AC200B NPT1007 NPT25100

    NPT25100

    Abstract: NPTB00004 NPT25015 NPTB00025 NPT1007 NPTB00050 NPT1004 NPT1005 NPT35015 AC360P
    Text: Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the economic benefit and ease of working with largearea silicon substrates. Our RF power transistors offer higher power densities, higher efficiency, and broader


    Original     		PDF NPTB00004 PO150S 99GHz 17GHz -35dBc NPT25015 NPT25100 800-1000MHz NPT25100 NPTB00004 NPT25015 NPTB00025 NPT1007 NPTB00050 NPT1004 NPT1005 NPT35015 AC360P

    NPTB0004

    Abstract: GaN amplifier 100W GaN Bias 25 watt vmos fet NPT25100 NPTB00004 NPTB00025 GaN amplifier temperature compensation future scope of wiMAX NPT25015
    Text: APPLICATION NOTE AN-010 GaN Essentials AN-010: GaN for LDMOS Users NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-010 GaN Essentials: GaN for LDMOS Users 1. Table of Contents 1. TABLE OF CONTENTS. 2


    Original     		PDF AN-010 AN-010: NPT25100 NPTB0004 GaN amplifier 100W GaN Bias 25 watt vmos fet NPTB00004 NPTB00025 GaN amplifier temperature compensation future scope of wiMAX NPT25015

    GaN amplifier temperature compensation

    Abstract: GAN temperature compensation 20k ohm potentiometer GaN amplifier hemt biasing thermistor 40k table NPTB00025 GaN Bias 25 watt NPT25100 AN009
    Text: APPLICATION NOTE AN-009 GaN Essentials AN-009: Bias Sequencing and Temperature Compensation for GaN HEMTs NITRONEX CORPORATION 1 OCTOBER 2008 APPLICATION NOTE AN-009 GaN Essentials: Bias Sequencing and Temperature Compensation of GaN HEMTs 1. Table of Contents


    Original     		PDF AN-009 AN-009: NPT25100 GaN amplifier temperature compensation GAN temperature compensation 20k ohm potentiometer GaN amplifier hemt biasing thermistor 40k table NPTB00025 GaN Bias 25 watt AN009

    NPTB00004

    Abstract: NPT1012 NPT25015 GaN amplifier 100W Gan on silicon transistor NPTB00025 NPT1007 GaN amplifier NPT1004 Gan on silicon substrate
    Text: March 2009 ISO 9001:2000 Worldwide leader in high performance GaN-on-Silicon RF power devices Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the reliability and quality of large-area silicon substrates.


    Original     		PDF NPTB00004 PO150S NPT25015 NPTB00004 NPT1012 NPT25015 GaN amplifier 100W Gan on silicon transistor NPTB00025 NPT1007 GaN amplifier NPT1004 Gan on silicon substrate

    NPTB0004

    Abstract: NPTB00004 NPTB00025 RF Power Transistors NPT25100 NPT35015 Gan on silicon transistor NPT25015 RF Transistor Selection rf transistor 2.5GHz
    Text: Product Selection Guide Nitronex’s patented Sigantic process combines the superior intrinsic high performance of GaN devices with the economic benefit and ease of working with large-area silicon substrates. Our RF power transistors offer higher power densities, higher efficiency, and


    Original     		PDF NPT25015 PO150S NPT251 NPTB00025 AC200B NPTB00040 AC360C NPTB00050 AC360B NPTB0004 NPTB00004 NPTB00025 RF Power Transistors NPT25100 NPT35015 Gan on silicon transistor NPT25015 RF Transistor Selection rf transistor 2.5GHz

    NPTB00004

    Abstract: NPT25015 ofdm equations NPT1004 NPT35015 Nitron NPT25100 transistor study NPTB00025 AN-012
    Text: APPLICATION NOTE AN-012 GaN Essentials AN-012: Thermal Considerations for GaN Technology NITRONEX CORPORATION 1 JUNE 2008 APPLICATION NOTE AN-012 GaN Essentials: Thermal Considerations for GaN Technology 1. Table of Contents 1. TABLE OF CONTENTS. 2


    Original     		PDF AN-012 AN-012: 64-QAM NPTB00004 NPT25015 ofdm equations NPT1004 NPT35015 Nitron NPT25100 transistor study NPTB00025 AN-012