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    NRVB1H100SFT3G Price and Stock

    onsemi NRVB1H100SFT3G

    Diode Schottky 100V 1A 2-Pin SOD-123FL T/R - Tape and Reel (Alt: NRVB1H100SFT3G)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas NRVB1H100SFT3G Reel 10,000 9 Weeks 10,000
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    Mouser Electronics NRVB1H100SFT3G 211,792
    • 1 $0.46
    • 10 $0.304
    • 100 $0.254
    • 1000 $0.144
    • 10000 $0.123
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    Verical () NRVB1H100SFT3G 30,000 10,000
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    NRVB1H100SFT3G 20,000 10,000
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    NRVB1H100SFT3G 10,000 10,000
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    NRVB1H100SFT3G 6,100 47
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    • 1000 $0.1331
    • 10000 $0.1269
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    Arrow Electronics () NRVB1H100SFT3G 20,000 9 Weeks 10,000
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    NRVB1H100SFT3G Cut Strips 6,100 9 Weeks 1
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    • 10 $0.2957
    • 100 $0.246
    • 1000 $0.1331
    • 10000 $0.1269
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    Newark () NRVB1H100SFT3G Reel 10,000 10,000
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    NRVB1H100SFT3G Cut Tape 70 1
    • 1 $0.047
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    NRVB1H100SFT3G Reel 10,000
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    Future Electronics NRVB1H100SFT3G Reel 20,000 9 Weeks 10,000
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    Onlinecomponents.com NRVB1H100SFT3G 30,000
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    TME NRVB1H100SFT3G 1
    • 1 $0.375
    • 10 $0.295
    • 100 $0.209
    • 1000 $0.155
    • 10000 $0.155
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    Richardson RFPD NRVB1H100SFT3G 10,000
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    Avnet Asia NRVB1H100SFT3G 9 Weeks 10,000
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    Avnet Silica NRVB1H100SFT3G 60,000 10 Weeks 10,000
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    Chip Stock NRVB1H100SFT3G 1,160
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    EBV Elektronik NRVB1H100SFT3G 11 Weeks 10,000
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    Flip Electronics NRVB1H100SFT3G 113,000
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    Master Electronics NRVB1H100SFT3G 30,000
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    New Advantage Corporation NRVB1H100SFT3G 40,000 1
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    Win Source Electronics NRVB1H100SFT3G 231,810
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    • 10000 $0.1926
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    NRVB1H100SFT3G Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    NRVB1H100SFT3G
    		On Semiconductor NRVB1H100 - DIODE SIGNAL DIODE, Signal Diode Original PDF 101.66KB 5

    NRVB1H100SFT3G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: MBR1H100SFT3G, NRVB1H100SFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123FL Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


    Original     		MBR1H100SFT3G, NRVB1H100SFT3G 123FL MBR1H100SF/D PDF

    NRVB1H100SFT3G

    Abstract: ON SEMICONDUCTOR MARKING DIAGRAM SOD-123
    Contextual Info: MBR1H100SFT3G, NRVB1H100SFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123FL Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


    Original     		MBR1H100SFT3G, NRVB1H100SFT3G OD-123FL MBR1H100SF/D ON SEMICONDUCTOR MARKING DIAGRAM SOD-123 PDF

    Contextual Info: MBR1H100SFT3G, NRVB1H100SFT3G Surface Mount Schottky Power Rectifier Plastic SOD−123FL Package http://onsemi.com This device uses the Schottky Barrier principle with a large area metal−to−silicon power diode. Ideally suited for low voltage, high frequency rectification or as free wheeling and polarity protection


    Original     		MBR1H100SFT3G, NRVB1H100SFT3G 123FL MBR1H100SF/D PDF