NRVBS360BT3G Search Results
NRVBS360BT3G Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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NRVBS360BT3G |
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Discrete Semiconductor Products - Diodes - Rectifiers - Single - DIODE SCHOTTKY 60V 3A SMB | Original | 121.17KB | |||
NRVBS360BT3G-VF01 | onsemi | DIODE SCHOTTKY 60V 3A SMB | Original | 245.87KB | |||
NRVBS360BT3G-VF01 | onsemi | DIODE SCHOTTKY 60V 3A SMB | Original | 112.01KB |
NRVBS360BT3G Price and Stock
onsemi NRVBS360BT3GDIODE SCHOTTKY 60V 3A SMB |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NRVBS360BT3G | Digi-Reel | 1 |
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NRVBS360BT3G | Bulk | 10 |
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NRVBS360BT3G | 99,709 |
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onsemi NRVBS360BT3G-VF01DIODE SCHOTTKY 60V 4A SMB |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NRVBS360BT3G-VF01 | Reel |
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NRVBS360BT3G-VF01 | Bulk | 2,500 |
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onsemi NRVBS360BT3G-IR02Diode Schottky 60V 4A 2-Pin SMB T/R (Alt: NRVBS360BT3G-IR02) |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NRVBS360BT3G-IR02 | 30 Weeks | 2,500 |
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onsemi NRVBS360BT3GVF01Diodes |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NRVBS360BT3GVF01 | 404 |
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NRVBS360BT3G Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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MBRS360T3G
Abstract: NRVBS360T3G NRVBS360BT3G MBRS360BT3G MBRS360BT3
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Original |
MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G MBRS360T3/D MBRS360T3G NRVBS360T3G MBRS360BT3G MBRS360BT3 | |
5M MARKING CODE DIODE SMCContextual Info: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay |
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MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G MBRS360T3/D 5M MARKING CODE DIODE SMC | |
Contextual Info: MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay |
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MBRS360T3G, MBRS360BT3G, NRVBS360T3G, NRVBS360BT3G MBRS360T3/D |