NS 4150 DA Search Results

mosfet ir 840

Abstract: sf200aa20 FCA75BC50 sqd65bb75 FBA75BA50 SF150AA50 FCA50BC50 SF150AA20 250A darlington transistor FBA50BA50
Contextual Info: POW ER M OSFET MODULE Switching Time ns R d s (o n ) V d s (o n ) TYPE mO FBA50BA50 FCA50BC50 FBA50BA FBA75BA50 FCA75BC50 SF100AA50 SF150AA50 SF100AA20 SF150AA20 SF200AA20 SF200AA10 SF200AA10 ☆ New DARLINGTON TRANSISTOR le A VcBO V SQD50 35 50 SQD65 65

Contextual Info: ¿888888888 |p M iwiHBBffi sm sssBP e .rfHHHHHHHHMh. m 1 1 itittnnnnn hhhhhhk-. ><>niftBHhr Data S heet No. 2N 4150 o % #f 1 l $ I c I ^88888 id L S E M IC O N D U C T O R S G eneric Part Num ber: 2N4150 Type 2N4150 Geometry 9201 Polarity NPN Qual Level: JAN - JANTXV

Contextual Info: 4150 SERIES FEMALE P.C.B CONN. 2 . 5 4 * 2 . 5 4 m m STRAIGHT TYPE REV DATE DESCRIPTION A 0 1 .0 8 .1 3 NEW RELEASE ECN NO. NAME TINA MATERIAL HOUSING : THERMOPLASTIC U L 9 4 V -0 HOUSING COLOR : BLACK TERMINAL : COPPER ALLOY TERMINAL PLATED : SEE ORDER INFORMATION

1N4148

Abstract: 4148
Contextual Info: 1N 4148, 1N 4150, 1N 4151, 1N 4448 Silicon Planar Diodes Silizium-Planar-Dioden Nominal current Nennstrom 150.300 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…100 V Glass case Glasgehäuse DO-35 SOD-27 Weight approx. Gewicht ca.

diode 4148

Abstract: T 4148 diode IN 4148 diode 4151 IN 4148 diode LL4150 LL4148-1 4148 4151 diode datasheet 4448
Contextual Info: LL 4148, LL 4150, LL 4151, LL 4448 Surface Mount Silicon Planar Diodes Silizium-Planar-Dioden für die Oberflächenmontage ±0.1 0.3 3.5±0.1 0.3 1.45 ±0.1 Nominal current Nennstrom 150.300 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung

Contextual Info: 1N 4148, 1N 4150, 1N 4151, 1N 4448 Silicon Planar Diodes Silizium-Planar-Dioden 150.300 mA Ø 1.9 Repetitive peak reverse voltage Periodische Spitzensperrspannung 3.9 62.5 Nominal current Nennstrom Glass case Glasgehäuse 50…100 V DO-35 SOD-27 Weight approx.

diode t 4148

Abstract: 4148 T 4148 diode 4148 diode IN 4148 1N4148 IN 4148 diode t 4148 diode 4148 diode 4151
Contextual Info: Diotec 1N 4148, 1N 4150, 1N 4151, 1N 4448, Small Signal Si-Diodes Si-Allzweck-Dioden Nominal current Nennstrom Ø 1.9 150 mA Repetitive peak reverse voltage Periodische Spitzensperrspannung 50…100 V max Glass case Glasgehäuse DO-35 SOD-27 Ø 0.56 max Dimensions / Maße in mm

Contextual Info: 1N 4150 Small-Signal Diode Fast Switching Rectifier Features ‹ Silicon Epitaxial Planar Diode ‹ For general purpose and switching ‹ This diode is also available in other case styles including the MiniMELF case with the type designation LL4150. Mechanical Data

diode 648

Abstract: 1N4150 648 diode DIODE WITH SOD CASE
Contextual Info: L L 4150 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode For general purpose and switching This diode is also available in other case styles including the DO-35 case with the type designation 1N4150. Mechanical Data Case: MiniMELF Glass Case SOD-80

618 diode

Abstract: LL4150
Contextual Info: 1N 4150 Small-Signal Diode Fast Switching Diode Features Silicon Epitaxial Planar Diode For general purpose and switching This diode is also available in other case styles including the MiniMELF case with the type designation LL4150. Mechanical Data Case: DO-34, DO-35 Glass Case

Contextual Info: , Line. J.E.IIE. 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 Damper diode BY428 FEATURES DESCRIPTION • Glass passivated Rugged glass package, using a high temperature alloyed construction.

45N120

Abstract: IXSH45N120 45N120 ixys
Contextual Info: High Voltage, Low VCE sat IGBT IXSH 45N120 VCES IC25 VCE(sat) Maximum Ratings TO-247 AD = 1200 V = 70 A = 3V Short Circuit SOA Capability Preliminary data Symbol Test Conditions VCES T J = 25°C to 150°C 1200 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1200

Contextual Info: High Voltage, High speed IGBT IXSH 35N140A VCES IC25 VCE sat = 1400 V = 70 A = 4V Short Circuit SOA Capability Advanced data Symbol Test Conditions Maximum Ratings VCES T J = 25°C to 150°C 1400 V VCGR T J = 25°C to 150°C; RGE = 1 MΩ 1400 V VGES Continuous

Contextual Info: IN 4148, IN 4150, IN 4151, IN 4448, Small Signal Si-Diodes Si-Allzwech-Dioden Nominal current Nennstrom Repetitive peak reverse voltage Periodische Spitzensperrspannung .ÇsO Ct V J 5 0 . ,100 V H Hrgl9 j £ 150 mA nox, Cvo EM Glass case Glasgehäuse DO-35

Varistor 271

Contextual Info: HC SERIES Date: 07/22/2010 S66ZOV131HC MAIDA STYLE NUMBER MAIDA ITEM NUMBER Electrical Specifications 01-1879 Physical Specifications Continuous AC Voltage 130 VAC Lead Style 059L1 Continuous DC Voltage 175 VDC X Nominal 0.394 in. 200 uA X Tolerance Low Varistor Voltage Limit

TOPD30

Abstract: TOPD300 InGaAs Photodiode 1550nm IR LASER 1550nm 07255 thermistor 054
Contextual Info: T—41—50 TOSHIBA -CLASER/FBR O P T I O OIE D Bi ^0^7255 GülblDO T • TOSfc. TOSHIBA PIN PHOTODIODE TOPD300 Features • • • • • • • InGaAs PIN Structure Mesa Type Chip-carrier Wavelength 0.8~1.6/tm High Speed 0.5ns Max Low Dark Current 10nA Max

Contextual Info: INTERNATIONAL RECTIFIER 48 5 5 4 5 2 SS INTERNATIONAL RECTIFIER m T| 4 8 5 5 ^ 2 QQQS11S S~|~~ 55 C 05115 Data Sheet No. PD-2.081 INTERNATIONAL RECTIFIER IO R - T 0 3 - A J 55HQ SERIES 60 Amp Schottky Power Rectifiers Major Ratings and Characteristics Characteristic

thermistor 054

Contextual Info: TOSHIBA -CLASER/FBR O P T I O DIE D • ^0^7552 001^105 3 « T O S b . T-4Ì-5Q TOSHIBA PIN PHOTODIODE TOPD320 Features • • • • • • • InGaAs PIN Structure Mesa Type i4.6mm Window Package Wavelength 0.8~1.6//m High Speed 0.5ns Max Low Dark Current 10nA Max

Contextual Info: Analog Standard Cell OSC40 - CMOS Crystal Oscillator 40MHz DATA SHEET Process Description C35 0.35µm OSC40 is a quartz crystal oscillator for a frequency range from 20 MHz to 40 MHz. ESD Protection (typ. 200 Ohm) and Load Capacitors (typ. 3pF) are included in the cell.

HC49

Abstract: OSC40
Contextual Info: Analog Standard Cell OSC40 - CMOS Crystal Oscillator 40MHz DATA SHEET Process Description C35 0.35 m OSC40 is a quartz crystal oscillator for a frequency range from 20 MHz to 40 MHz. ESD Protection (typ. 200 Ohm) and Load Capacitors (typ. 3pF) are included in the cell.

IXSH35N140A

Abstract: 53al bj 113
Contextual Info: □ IXYS : Advanced data v CES High Voltage, High speed IGBT IX S H 35N 140A 1400 V IX S H 35 N 1 3 5A 1350 V ^C25 VCE sat 70 A 70 A 4V 4V Short Circuit SOA Capability Maximum Ratings Symbol Test Conditions v* CHS Tj = 25°C to 150°C v* CGR ^ v GES Continuous

Contextual Info: Data Sheet N0604N R07DS0850EJ0100 Rev.1.00 Aug 27, 2012 N-channel MOSFET 60 V, 82 A, 6.5 mΩ Description The N0604N is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance RDS on = 6.5 mΩ MAX. (VGS = 10 V, ID = 41 A)

mosfet ir 840

Abstract: 250A darlington transistor SF200AA20 FBA50BA50 FCA75BC50 SF150AA50 sqd65bb75 FBA75BA SF150AA20 FBA75BA50
Contextual Info: SANSHA ELECTRIC liF G 37E CO l i 7 ^ ^ 1 2 4 3 «- D Ü Q O O O S 3> I I • t —y — — I M O iin r m m h S F E T S / T R rnn A i i i N i S T I S £ f 1J n I S i l i- T O R Id Voss A V Sw itching Tim e ns

Contextual Info: Product specification PMV32UP 20 V, 4 A P-channel Trench MOSFET Rev. 1 — 11 March 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench