NS-5 3105 Search Results

Contextual Info: M O S E L V IT E L IC V53C16258H HIGH PERFORMANCE 2 5 6 K X 16 EDO PAGE MODE CMOS DYNAMIC RAM OPTIONAL SELF REFRESH PRELIMINARY 30 35 40 45 50 Max. RAS Access Time, tRAC 30 ns 35 ns 40 ns 45 ns 50 ns Max. Column Address Access Time, Ocaa) 16 ns 18 ns 20 ns

Contextual Info: M O S E L -V IT E L IC V52C4258 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 5 1 2 X 4 SAM PRELIMINARY 60 70 80 10 Max. RAS Access Time, tp^c 60 ns 70 ns 80 ns 100 ns Max. CAS Access Time, (tcAC) 15 ns 20 ns 25 ns 25 ns Max. Column Address Access Time, (tM )

Contextual Info: iw‘ VITELIC V52C4256 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 5 1 2 X 4 SAM 80 10 Max. RAS Access Time, tRAC 80 ns 100 ns Max. CAS Access Time, (tcAc) 25 ns 25 ns Max. Column Address Access Time, (t*) 45 ns 50 ns Min. Fast Page Mode Cycle Time, (tpc)

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Contextual Info: JUN ì 2 '982 VITELIC V52C4258 MULTIPORT VIDEO RAM WITH 256K X 4 DRAM AND 5 1 2 X 4 SAM HIGH PERFORMANCE V52C4258 80 10 Max. RAS Access Time, tRAC 80 ns 100 ns Max. CAS Access Time, (tcAC) 25 ns 25 ns Max. Column Address Access Time, (t^ ) 45 ns 50 ns Min. Fast Page Mode Cycle Time, (tPC)

GAL20V8

Abstract: P20V8 20V8 GAL20V8B-10LP GAL20V8B-15QP GAL20V8B-7LJ GAL20V8B-7LP GAL20V8C gal 20v8 programming specification
Contextual Info: Lattice CAL20VQ High Performance E2CMOS PLD Generic Array Logic •■■■■■ UjJHIHZEffiHGESEEElZEl FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 5 ns Maximum Propagation Delay — Fmax = 166 MHz — 4 ns Maximum from Clock Input to Data Output

x28hc256-12

Abstract: X28HC256-90 X28HC256-70
Contextual Info: im Advance Information High Speed X28HC256 256K 32K X 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION * Access Time: 70 ns * SIMPLE Byte and Page Write — Single 5 Volt Supply — No External High Voltages or V p p Control Circuits — Self Timed

Diagram11

Abstract: A7-A14 X28HC256 X28VC256
Contextual Info: Advance Information High Speed X28HC256 256K 32K X 8 Bit 5 Volt, Byte Alterable E2PROM FEATURES DESCRIPTION * Access Time: 70 ns * SIMPLE Byte and Page Write — Single 5 Volt Supply — No External High Voltages or Vpp Control Circuits — Self Timed — No Erase Before Write

AT27C010-55LI

Abstract: AT27C010 15DC 27C010L AT27C010
Contextual Info: AT27C01 O/L Features • • Fast Read Access Time - 45 ns Low Power CMOS Operation 100 |iA max. Standby 25 mA max. Active at 5 MHz AT27C010L 40 mA max. Active at 5 MHz (AT27C010) Wide Selection of JEDEC Standard Packages 32-Lead 600-mil PDIP and Cerdip

Contextual Info: Alle Bechle lorbehallen/ ill rights rtstrni 5 k 2 3 1 7,9 C 4.85 III B Ool. D o lo il. 2 0 - J U N - 0 2 None Slond. 0. 5 0 to 0. 6 5 Coble i ns u l a t o r 0 31056 2 0 - J U N -0 2 Mod. Ool. CV None I/O bellow CV loop. 60 13 026 5200 Par t - No. h o r.m ik

Contextual Info: Features M ËT • Fast Read Access Time - 70 ns • 5-Volt Only Reprogramming • Sector Program Operation - Single Cycle Reprogram Erase and Program - 512 Sectors (128 words/sector) - Internal Address and Data Latches for 128 Words • Internal Program Control and Timer

AT27C010 15DC

Abstract: AT270010L-70DM
Contextual Info: AT27C010/L Features • • • e e e e e e e Fast Read Access Time - 45 ns Low Power CMOS Operation 100 ^A max. Standby 25 mA max. A ctive at 5 MHz AT27C010L 40 mA max. A ctive at 5 MHz (AT27C01Q) W ide Selection o f JEDEC Standard Peckages 32-Lead OO&mil PEHP andC erdip

Contextual Info: L A T T IC E S E M I C O N D U C T O R hSE D 5 3 0 ^ ^ 4 ^ OGOEÔlfi 30b Lattice LAT GAL20V8 High Performance E2CMOS PLD Generic Array Logic •■■■■■ FUNCTIONAL BLOCK DIAGRAM FEATURES • HIGH PERFORMANCE E2CMOS TECHNOLOGY — 5 ns Maximum Propagation Delay

Waferscale Integration

Abstract: WS27C010F-55 WS27C010L WS57C010F EPROM 27512 vu025
Contextual Info: liJAFER S C A L E INTEGRATION 3 TE D HB ^5 GOOObST M ESWAF WS27C010F * Ä ADVANCE INFORMATION WAFERSCALE INTEGRATION, INC. 1 Meg 128K x 8 CMOS EPROM KEY FEATURES • High Performance — • EPI Processing 55 ns — — • S im plified Upgrade Path —

Contextual Info: M O S E L V IT E L IC V 5 3C 1 81608 1M X 16 P A G E M O D E C M O S D Y N A M IC R A M W ITH E X T E N D E D D A TA O U T P U T P R E L IM IN A R Y HIGH PERFORMANCE 50 60 70 Max. RAS Access Time, tRAC 50 60 ns 70 ns Max. Column Address Access Time, (tCAA)

Contextual Info: LH52258A FEATURES • Fast Access Times: 20/25 ns • Low Power Standby when Deselected • TTL Compatible I/O • 5 V± 10% Supply • Fully Static Operation • JEDEC Standard Pinout • Packages: 28-Pin, 300-mil DIP 28-Pin, 300-mil SOJ CMOS 32K x 8 Static RAM

Contextual Info: HM62W1664H Series HM62W1864H Series P r e lim in a r y 65536-word x 16/18-bit High Speed CMOS Static RAM T h e H M 6 2 W 1 6 6 4 H /H M 6 2 W 1 8 6 4 H is an asyncronous 3.3 V operation high speed static RAM organized as 64 kword x 16/18 bit. It realize h ig h sp eed access tim e 2 5 /3 0 /3 5 /4 5 ns w ith

Contextual Info: FORM 4 .0 4 - 0 0 1 C LTR - REVISION DATE RELEASED APPD 0 6 -2 7 -1 1 RoHS COMPLIANT 2 0 0 2 /9 5 /E C REVISION NOTIFICATION I NOTES: I PMA □ 1. ALL DIM ENSIO NS 2. WEIGHT: 0 .2 0 IN INCHES M IL L IM E TE R S □ lb s I I DEC—G 3 0 E —SIW—1 2 0 A

X15V

Abstract: Z86233 Z86243 P24T 25p05
Contextual Info: < $3105 C u s t o m er P r o c u r em en t S p ec ific a tio n Z86233/243 CMOS Z8 8K ROM Co n s u m e r Co n t r o l l e r P r o c es s o r FEATURES Part ROM RAM Kbytes bytes Z86233 8 Z86243 8 237 236 Package Information I/O 24 32 28-pinDIP,SOIC,PLCC 40-pin DIP,

Contextual Info: Extract from the online catalog MTK-LOER Order No.: 3105012 The illustration shows version MTK-LOEL Disconnect and test disconnect terminal block, Connection type: Screw connection, Cross section: 0.2 mm² - 4 mm²,

Contextual Info: MOSEL M S 310512 65,536x8 CMOS Mask Programmable ROM FEATURES DESCRIPTION • Access time: 150ns max Th e M S 3 1 0 5 1 2 is a high-perform ance R ead Only M em ory organized as 6 5 ,5 3 6 words by 8 bits. It is designed to be compatible with all microprocessors and similar applica­

Contextual Info: MOSEL M S 310512 65,536x8 CMOS Mask Programmable ROM FEATURES DESCRIPTION • Access time: 150ns max The MS310512 is a high-performance Read Only Memory organized as 65,536 words by 8 bits. It is designed to be compatible with all microprocessors and similar applica­

Contextual Info: Module no:3105012 LabelId:3105012 Operator:Phoenix 19:06:05, Donnerstag, 28. Juni 2001 MTK-LOE with screw / solder connection Terminal width 5.2 IEC 2 [mm ] Connection data Solder connection rigid solid flexible stranded AWG I U [A] [V] 0.2-2.5 24-12 12

schematic diagram induction heating

Abstract: RD-914 Axiohm 5v stepper motor Opto-Sensor heavy duty induction heating induction heating manual coil gold detector circuit diagram printhead module schematic induction heating
Contextual Info: THERMAL PRINTER MECHANISM Mini-Printer CM-RMBC CM-RMDG User Manual Reference 3105978-Z April 2000 AXIOHM, 1-9 Rue d’Arcueil 92120 Montrouge, France Tel : 33 (0) 1 47 46 78 00 Fax (33) (0) 1 47 46 78 76 1 / 43 IMPORTANT This manual contains the basic instructions to run your printer. Read it

IRM3105

Abstract: Siemens Optoelectronic IR LED IRM3001 TV remote receive siemens unique
Contextual Info: SIEMENS IRM3001/3002/3105 5 V INFRARED DATA TRANSCEIVER IRM3001/3002 Pin Functions Function 1 LED Anode 2 LED Cathode 3 Transm it 4 Receive 5 Shut dow n FEATURES • Compatible with IrDA Specifications • Wide Dynamic Range • Automatic Threshold Control