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    NTD4809 Price and Stock

    Rochester Electronics LLC NTD4809N-1G

    MOSFET N-CH 30V 9.6A/58A IPAK
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    DigiKey NTD4809N-1G Tube 2,959
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    onsemi NTD4809N-1G

    MOSFET N-CH 30V 9.6A/58A IPAK
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    DigiKey NTD4809N-1G Tube
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    Verical NTD4809N-1G 5,824 3,619
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    Rochester Electronics NTD4809N-1G 6,748 1
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    • 100 $0.0917
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    Rochester Electronics LLC NTD4809NT4H

    RF MOSFET 30V DPAK
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    DigiKey NTD4809NT4H Bulk 1,480
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    onsemi NTD4809NA-1G

    MOSFET N-CH 30V 9.6A/58A IPAK
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    DigiKey NTD4809NA-1G Tube
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    Verical NTD4809NA-1G 48,500 3,619
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    NTD4809NA-1G 37,500 3,619
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    Rochester Electronics NTD4809NA-1G 86,000 1
    • 1 $0.0975
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    • 100 $0.0917
    • 1000 $0.0829
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    Rochester Electronics LLC NTD4809NA-1G

    MOSFET N-CH 30V 9.6A/58A IPAK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NTD4809NA-1G Tube 2,959
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    Find more NTD4809 price and stock on Findchips.com

    NTD4809 Datasheets (15)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NTD4809N On Semiconductor Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Original PDF
    NTD4809N-1G On Semiconductor NTD4809 - TRANSISTOR 9 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369D-01, IPAK-3, FET General Purpose Power Original PDF
    NTD4809N-1G On Semiconductor Power MOSFET 30 V, 58 A, Single N-Channel, DPAK Original PDF
    NTD4809N-35G On Semiconductor NTD4809 - TRANSISTOR 9 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369AD-01, IPAK-3, FET General Purpose Power Original PDF
    NTD4809N-35G On Semiconductor Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Original PDF
    NTD4809NA-1G ON Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 9A IPAK Original PDF
    NTD4809NA-35G ON Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 9A IPAK Original PDF
    NTD4809NAT4G ON Semiconductor FETs - Single, Discrete Semiconductor Products, MOSFET N-CH 30V 9A DPAK Original PDF
    NTD4809NH On Semiconductor Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Original PDF
    NTD4809NH-1G On Semiconductor Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Original PDF
    NTD4809NH-35G On Semiconductor Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Original PDF
    NTD4809NHT1G On Semiconductor Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Original PDF
    NTD4809NHT4G On Semiconductor Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Original PDF
    NTD4809NT4G On Semiconductor NTD4809 - TRANSISTOR 9 A, 30 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET, LEAD FREE, CASE 369AA-01, DPAK-3, FET General Purpose Power Original PDF
    NTD4809NT4G On Semiconductor Power MOSFET 30 V, 58 A, Single N-Channel, DPAK Original PDF

    NTD4809 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NTD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4809NH NTD4809NH/D

    48 09ng

    Abstract: 4809ng mosfet 48 09ng 09ng 4809n mosfet on 09ng NTD4809NA-1G 09ng 040 48 369D
    Text: NTD4809NA Advance Information Power MOSFET 25 V, 58 A, Single N- Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices


    Original     		PDF NTD4809NA NTD4809NA/D 48 09ng 4809ng mosfet 48 09ng 09ng 4809n mosfet on 09ng NTD4809NA-1G 09ng 040 48 369D

    09nhg

    Abstract: NTD4809NHT4G 4809nhg NTD4809NH 369D 48 09NHG
    Text: NTD4809NH Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4809NH NTD4809NH/D 09nhg NTD4809NHT4G 4809nhg NTD4809NH 369D 48 09NHG

    Untitled

    Abstract: No abstract text available
    Text: NTD4809N, NVD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC Q101 Qualified − NVD4809N These Devices are Pb−Free and are RoHS Compliant


    Original     		PDF NTD4809N, NVD4809N NTD4809N/D

    mosfet 48 09ng

    Abstract: 09ng 48 09ng 4809ng 4809N
    Text: NTD4809N Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4809N NTD4809N/D mosfet 48 09ng 09ng 48 09ng 4809ng 4809N

    48 09ng

    Abstract: 4809ng 09ng mosfet 48 09ng NTD4809NT4G mosfet on 09ng 4809n 369D NTD4809N
    Text: NTD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com RDS(on) MAX


    Original     		PDF NTD4809N NTD4809N/D 48 09ng 4809ng 09ng mosfet 48 09ng NTD4809NT4G mosfet on 09ng 4809n 369D NTD4809N

    09ng

    Abstract: 48 09ng mosfet on 09ng mosfet 48 09ng NTD4809NT4G 4809N 369D 4809ng 09ng 040 48 NTD4809N
    Text: NTD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4809N NTD4809N/D 09ng 48 09ng mosfet on 09ng mosfet 48 09ng NTD4809NT4G 4809N 369D 4809ng 09ng 040 48 NTD4809N

    48 09NHG

    Abstract: 09nhg a/48 09NHG 369D NTD4809NH NTD4809NHT4G
    Text: NTD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4809NH NTD4809NH/D 48 09NHG 09nhg a/48 09NHG 369D NTD4809NH NTD4809NHT4G

    48 09ng

    Abstract: 09ng 4809ng mosfet 48 09ng mosfet on 09ng
    Text: NTD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4809N NTD4809N/D 48 09ng 09ng 4809ng mosfet 48 09ng mosfet on 09ng

    Untitled

    Abstract: No abstract text available
    Text: NTD4809NH, NVD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4809NH


    Original     		PDF NTD4809NH, NVD4809NH AEC-Q101 NTD4809NH/D

    48 09ng

    Abstract: 09ng
    Text: NTD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4809N NTD4809N/D 48 09ng 09ng

    369D

    Abstract: NTD4809NH NTD4809NHT1G NTD4809NHT4G
    Text: NTD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4809NH NTD4809NH/D 369D NTD4809NH NTD4809NHT1G NTD4809NHT4G

    48 09ng

    Abstract: 4809ng 09ng mosfet 48 09ng 4809N mosfet 85 09ng NTD4809NT4G 002 48 09ng mosfet on 09ng 369AD
    Text: NTD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com RDS(on) MAX


    Original     		PDF NTD4809N NTD4809N/D 48 09ng 4809ng 09ng mosfet 48 09ng 4809N mosfet 85 09ng NTD4809NT4G 002 48 09ng mosfet on 09ng 369AD

    09ng

    Abstract: 4809ng mosfet 48 09ng 48 09ng mosfet on 09ng
    Text: NTD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4809N NTD4809N/D 09ng 4809ng mosfet 48 09ng 48 09ng mosfet on 09ng

    48 09ng

    Abstract: 4809ng 09ng mosfet on 09ng 4809n NTD4809NT4G mosfet 48 09ng NTD4809N marking e3 NTD4809N-35G
    Text: NTD4809N Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb-Free Devices http://onsemi.com V(BR)DSS


    Original     		PDF NTD4809N NTD4809N/D 48 09ng 4809ng 09ng mosfet on 09ng 4809n NTD4809NT4G mosfet 48 09ng NTD4809N marking e3 NTD4809N-35G

    Untitled

    Abstract: No abstract text available
    Text: NTD4809NH, NVD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4809NH


    Original     		PDF NTD4809NH, NVD4809NH NTD4809NH/D

    48 09ng

    Abstract: 09NG 4809ng mosfet 48 09ng mosfet on 09ng 4809n mosfet on 48 09ng 369D 125C10 09ng 040 48
    Text: NTD4809N Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4809N NTD4809N/D 48 09ng 09NG 4809ng mosfet 48 09ng mosfet on 09ng 4809n mosfet on 48 09ng 369D 125C10 09ng 040 48

    09nhg

    Abstract: 48 09NHG 4809NH NTD4809NHT4G 369D NTD4809NH 4809NHG
    Text: NTD4809NH Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4809NH NTD4809NH/D 09nhg 48 09NHG 4809NH NTD4809NHT4G 369D NTD4809NH 4809NHG

    mosfet on 48 09ng

    Abstract: mosfet on 09ng 48 09ng 4809ng 09ng on 48 09ng 4809n mosfet 48 09ng 369D NTD4809N
    Text: NTD4809N Power MOSFET 30 V, 58 A, Single N−Channel, DPAK/IPAK Features • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses These are Pb−Free Devices http://onsemi.com


    Original     		PDF NTD4809N NTD4809N/D mosfet on 48 09ng mosfet on 09ng 48 09ng 4809ng 09ng on 48 09ng 4809n mosfet 48 09ng 369D NTD4809N

    09nhg

    Abstract: 4809nhg 48 09NHG 369D NTD4809NH 4809NH NTD4809NH-1G
    Text: NTD4809NH Power MOSFET 30 V, 58 A, Single N-Channel, DPAK/IPAK Features •ăLow RDS on to Minimize Conduction Losses •ăLow Capacitance to Minimize Driver Losses •ăOptimized Gate Charge to Minimize Switching Losses •ăThese are Pb-Free Devices http://onsemi.com


    Original     		PDF NTD4809NH NTD4809NH/D 09nhg 4809nhg 48 09NHG 369D NTD4809NH 4809NH NTD4809NH-1G

    Untitled

    Abstract: No abstract text available
    Text: NCP1588, NCP1589 Low Voltage Synchronous Buck Controller The NCP158x is a low cost PWM controller designed to operate from a 5 V or 12 V supply. This device is capable of producing an output voltage as low as 0.8 V. This device is capable of converting voltage from as low as 2.5 V. This 10-pin device provides an optimal


    Original     		PDF NCP1588, NCP1589 NCP158x 10-pin NCP1588/D

    NCP1588

    Abstract: NCP1588MTR2G DFN10 NTD30N02 Diode marking ug LG LX DIODE MARKING code UG 45 lg controller circuit diagram LG monitor circuit diagram diagram LG monitor circuits
    Text: NCP1588 Low Voltage Synchronous Buck Controller The NCP1588 is a low cost PWM controller designed to operate from a 5 V or 12 V supply. This device is capable of producing an output voltage as low as 0.8 V. This device is capable of converting voltage from as low as 2.5 V. This 10-pin device provides an optimal


    Original     		PDF NCP1588 NCP1588 10-pin 300kHz NCP1588/D NCP1588MTR2G DFN10 NTD30N02 Diode marking ug LG LX DIODE MARKING code UG 45 lg controller circuit diagram LG monitor circuit diagram diagram LG monitor circuits

    Untitled

    Abstract: No abstract text available
    Text: NCP1589A, NCP1589B Low Voltage Synchronous Buck Controller The NCP1589A/B is a low cost PWM controller designed to operate from a 5 V or 12 V supply. This device is capable of producing an output voltage as low as 0.8 V. This device is capable of converting


    Original     		PDF NCP1589A, NCP1589B NCP1589A/B NCP1589A/D

    irfb4115

    Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
    Text: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .


    Original     		PDF element-14 F155-6A F155-10A F165-15A F175-25A irfb4115 BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor