NTE276 Search Results
NTE276 Datasheets (2)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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NTE276 |
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SCR 1.25KV TO66 | Original | 58.82KB | 2 | ||
NTE2764 |
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Integrated Circuit NMOS, 64K Erasable EPROM, 200ns | Original | 33.06KB | 5 |
NTE276 Price and Stock
NTE Electronics Inc NTE276Thyristor, gto,1.2Kv V(Drm),to-66 |Nte Electronics NTE276 |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NTE276 | Bulk | 1 |
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NTE276 | 2 | 1 |
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NTE276 | 8 |
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NTE276 | 5 | 1 |
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NTE Electronics Inc NTE2764EPROM - 64K - NMOS - 200ns - 28-lead DIP - UV Erasable |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NTE2764 | 5 |
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Buy Now |
NTE276 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: _ _ N T E ELECTRONICS T n C 17E" NMOS 32K UV EPROM. ZOOnS i . 24-LEAD DIP, SEE DIAG 300 . • ¿43155*1 GOQElflb MOS, 1400-BIT SERIAL EAROM, 2.0nS . . 14-LEAD DIP, SEE DIAG 247 NTE2764 NTE2800 ‘ U u ■ 24 23 22 21 20 19 18 17 16 15 14 13 1 2 3 4 5 6 7 |
OCR Scan |
1400-BIT 14-LEAD NTE2764 NTE2800 NTE2732A 200nS 28-LEAD 24-LEAD 40-LEAD NTE6502 | |
NTE2764Contextual Info: NTE2764 Integrated Circuit NMOS, 64K Erasable EPROM, 200ns Description: The NTE2764 is a 65,536–bit 8192 X 8 bit Ultraviolet Erasable and Electrically Programmable Read–Only Memory (EPROM) in a 28–Lead DIP type package which operates from a single +5V supply, making it ideal for microprocessor applications. It features an output enable control and offers |
Original |
NTE2764 200ns NTE2764 NTE2764s | |
NTE2764Contextual Info: NTE2764 Integrated Circuit NMOS, 64K Erasable EPROM, 200ns Description: The NTE2764 is a 65,536–bit 8192 X 8 bit Ultraviolet Erasable and Electrically Programmable Read–Only Memory (EPROM) in a 28–Lead DIP type package which operates from a single +5V supply, making it ideal for microprocessor applications. It features an output enable control and offers |
Original |
NTE2764 200ns NTE2764 NTE2764s | |
Contextual Info: NTE276 Thyristors Gate Turn Off Thyristor GTO V(DRM) Max. (V)1.2k V(RRM) Max. (V) I(T) Rated Maximum (A)5.0² @Temp. (øC) (Test Condition) I(TSM) Max. (A)80 @ t(w) (s) (Test Condition) I(GT) Max. (A)120m V(GT) Max.(V)1.5 I(H) Max. (A) Holding Current300m |
Original |
NTE276 Current300mà StyleTO-66 Code3-23 | |
NTE276
Abstract: SCR Inverter datasheet
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Original |
NTE276 250mA NTE276 SCR Inverter datasheet | |
NTE4256Contextual Info: r MICROPROCESSOR & MEMORY CIRCUITS INCLUDES PERIPHERALS NTE2732A 24-Lead DIP, See Diag. 300 NMOS, 32K EPROM, UV, 200ns NTE2764 28-Lead DIP, See Diag. 510 NMOS, 64K EPROM, 200ns VppO A? 0 ~ ^ r _ 0 vcc A6 1 2 AS AS 1 B A9 A4 § j ] A11 ^ ÖE/Vpp A3 I A2 1 |
OCR Scan |
NTE2732A 24-Lead 200ns NTE2764 28-Lead NTE2800 14-Lead 1400-Bit NTE4256 | |
NTE199
Abstract: NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K
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Original |
MPX2010GS MTP75N06HD NTE102A NTE2312 MPX2050DP MTP8N50E NTE103 NTE2315 MPX2050GP MTW10N100E NTE199 NTE2324 NTE262 NTE109 NTE3098 nte222 NTE290A nte184 NTE192A NTE309K |