NTE298 Search Results
NTE298 Datasheets (10)
Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
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NTE298 |
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Silicon Complementary Transistor Audio Amplifier, Driver | Original | 20.71KB | 2 | ||
NTE298 |
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Bipolar Transistors | Scan | 120.13KB | 1 | ||
NTE2980 |
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Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch | Original | 24.32KB | 3 | ||
NTE2981 |
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Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch | Original | 24.46KB | 3 | ||
NTE2984 |
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Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch | Original | 24.7KB | 3 | ||
NTE2985 |
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Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch | Original | 27.1KB | 3 | ||
NTE2986 |
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Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch | Original | 27.1KB | 3 | ||
NTE2987 |
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Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch | Original | 26.78KB | 3 | ||
NTE2988 |
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MOSFET N-Channel, Enhancement Mode High Speed Switch | Original | 24.48KB | 2 | ||
NTE2989 |
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MOSFET N-Channel, Enhancement Mode High Speed Switch | Original | 25.68KB | 2 |
NTE298 Price and Stock
NTE Electronics Inc NTE298Transistor, Bipolar, Pnp, 80V, 500Ma, To-92-3; Transistor Polarity:Pnp; Collector Emitter Voltage Max:80V; Continuous Collector Current:500Ma; Power Dissipation:1W; Transistor Mounting:Through Hole; No. Of Pins:3Pins; Product Range:-Rohs Compliant: Yes |Nte Electronics NTE298 |
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NTE298 | Bulk | 1 |
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NTE298 | 7 | 2 |
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NTE298 | 23 |
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NTE Electronics Inc NTE2980Transistor, mosfet, n-Channel,60V V(Br)Dss,7.7A I(D),to-251 |Nte Electronics NTE2980 |
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NTE2980 | Bulk | 1 |
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NTE Electronics Inc NTE2984Power Mosfet N-channel 60V Id=17A TO-220 Case Logic Level High Speed Switch |
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NTE2984 | 35 |
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NTE2984 | 13 |
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NTE2984 | 19 | 1 |
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NTE Electronics Inc NTE2986Power Mosfet N-channel 60V Id=50A TO-220 Case Logic Level High Speed Switch |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NTE2986 | 12 |
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NTE2986 | 7 | 1 |
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NTE Electronics Inc NTE2989Power Mosfet N-channel 600V Id=10A TO-220fn Case High Speed Switch |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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NTE2989 | 7 |
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NTE2989 | 3 | 1 |
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NTE298 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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NTE2980
Abstract: 77A DIODE
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Original |
NTE2980 00A/s, NTE2980 77A DIODE | |
nte297
Abstract: NTE297MP
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Original |
NTE297 NTE298 500mA, 300mA, 100MHz NTE297MP NTE297 | |
NTE2981Contextual Info: NTE2981 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche rated D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V Absolute Maximum Ratings: Drain Current, ID Continuous (VGS = 5V) |
Original |
NTE2981 NTE2981 | |
Contextual Info: NTE2980 Logic Level MOSFET N - Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D Fast Switching Absolute Maximum Ratings: Drain Current, ID Continuous (VGS = 5V) TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.7A |
Original |
NTE2980 | |
NTE2980Contextual Info: NTE2980 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D Fast Switching Absolute Maximum Ratings: Drain Current, ID Continuous (VGS = 5V) TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.7A |
Original |
NTE2980 NTE2980 | |
NTE2988Contextual Info: NTE2988 MOSFET N–Channel, Enhancement Mode High Speed Switch Description: The NTE2988 is an N–Channel, enhancement mode, power field effect transistor in a TO52 type package designed especially for low power inverters, interface to CMOS and TTL logic, and line drivers. |
Original |
NTE2988 NTE2988 | |
Contextual Info: NTE2980 Logic Level MOSFET N-Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D Fast Switching Absolute Maximum Ratings: Drain Current, ID Continuous (VGS = 5V) TC = +25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.7A |
Original |
NTE2980 | |
Contextual Info: NTE2984 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on0 Specified at VGS = 4V & 5V D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements |
Original |
NTE2984 | |
NTE2987Contextual Info: NTE2987 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Avalanche Rugged Technology D Logic Level Gate Drive D RDS on = 0.09Ω Typ. at VGS = 5V D +175°C Operating Temperature D Fast Switching D Low Gate Charge D High Current Capability |
Original |
NTE2987 NTE2987 | |
NTE2985Contextual Info: NTE2985 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements |
Original |
NTE2985 NTE2985 | |
NTE2986Contextual Info: NTE2986 Logic Level MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D +175°C Operating Temperature D Fast Switching D Ease of Paralleling D Simple Drive Requirements |
Original |
NTE2986 NTE2986 | |
nte2981Contextual Info: NTE2981 Logic Level MOSFET N−Channel, Enhancement Mode High Speed Switch TO251 Features: D Dynamic dv/dt Rating D Repetitive Avalanche rated D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V D TO251 Type Package Absolute Maximum Ratings: Drain Current, ID |
Original |
NTE2981 00A/s, nte2981 | |
Contextual Info: NTE2988 MOSFET N–Channel, Enhancement Mode High Speed Switch Description: The NTE2988 is an N–Channel, enhancement mode, power field effect transistor in a TO52 type package designed especially for low power inverters, interface to CMOS and TTL logic, and line drivers. |
Original |
NTE2988 | |
NTE2984
Abstract: 110mJ
|
Original |
NTE2984 NTE2984 110mJ | |
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Contextual Info: NTE2981 Logic Level MOSFET N - Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche rated D Logic Level Gate Drive D RDS on Specified at VGS = 4V & 5V Absolute Maximum Ratings: Drain Current, ID Continuous (VGS = 5V) |
Original |
NTE2981 | |
nte280
Abstract: nte291
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OCR Scan |
280MP NTE274) NTE281) NTE280 284MP 281MCP NTE291) 292MCP NTE292 NTE291 nte280 nte291 | |
STk442-130
Abstract: M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717
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Original |
100-up) STk442-130 M56730ASP PAC011A PAC010A UPC2581 PAL005A stk413-020a upc2581v ecg semiconductors master replacement guide STRS5717 | |
NTE300Contextual Info: N T E 'ELECTRONICS INC ~SBE V • m a ì a S I POPabOa WNTE T - 3 3 - oT Maximum Breakdown Voltage NTH TVpe Number Polarity and Material Description and Application 28 9 NPN-Si Audio Power Amp and Switch Comp to NTE290) Case Style Disg. No. U 83/ 40/ 9c |
OCR Scan |
NTE290) NTE289 NTE300) T0202 NTE300 |