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    NTE59 Price and Stock

    NTE Electronics Inc NTE592

    Rectifier Diode,200V V(Rrm),sot-23 |Nte Electronics NTE592
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    Component Electronics, Inc NTE592 45
    • 1 $3.08
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    NTE Electronics Inc NTE5987

    Standard Diode, 40A, 200V, Do-5; Repetitive Peak Reverse Voltage:200V; Average Forward Current:40A; Forward Voltage Max:1.3V; Diode Module Configuration:-; Diode Case Style:Do-5; No. Of Pins:2Pins; Operating Temperature Max:190°C Rohs Compliant: Yes |Nte Electronics NTE5987
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    NTE Electronics Inc NTE5920

    Standard Diode, 20A, 400V, Do-4; Repetitive Peak Reverse Voltage:400V; Average Forward Current:20A; Forward Voltage Max:1.23V; Diode Module Configuration:-; Diode Case Style:Do-4; No. Of Pins:2Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Nte Electronics NTE5920
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    NTE Electronics Inc NTE5982

    Standard Diode, 40A, 100V, Do-5; Repetitive Peak Reverse Voltage:100V; Average Forward Current:40A; Forward Voltage Max:1.3V; Diode Module Configuration:-; Diode Case Style:Do-5; No. Of Pins:2Pins; Operating Temperature Max:190°C Rohs Compliant: Yes |Nte Electronics NTE5982
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    NTE Electronics Inc NTE5990

    Standard Diode, 40A, 400V, Do-5; Repetitive Peak Reverse Voltage:400V; Average Forward Current:40A; Forward Voltage Max:1.3V; Diode Module Configuration:-; Diode Case Style:Do-5; No. Of Pins:2Pins; Operating Temperature Max:190°C Rohs Compliant: Yes |Nte Electronics NTE5990
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    NTE59 Datasheets (83)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF PDF Size Page count
    NTE59
    NTE Electronics PNP Silicon Complementary Transistor High Power Audio Output Original PDF 20.77KB 2
    NTE590
    NTE Electronics DIODE ARRAY GP 100MA 3SIP Original PDF 54.95KB 2
    NTE5900
    NTE Electronics Silicon Power Rectifier Diode, 16 Amp Original PDF 23.59KB 2
    NTE5901
    NTE Electronics Silicon Power Rectifier Diode, 16 Amp Original PDF 23.59KB 2
    NTE5902
    NTE Electronics Silicon Power Rectifier Diode, 16 Amp Original PDF 23.59KB 2
    NTE5903
    NTE Electronics Silicon Power Rectifier Diode, 16 Amp Original PDF 23.59KB 2
    NTE5904
    NTE Electronics Silicon Power Rectifier Diode, 16 Amp Original PDF 23.59KB 2
    NTE5905
    NTE Electronics Silicon Power Rectifier Diode, 16 Amp Original PDF 23.59KB 2
    NTE5906
    NTE Electronics Silicon Power Rectifier Diode, 40 Amp Original PDF 26.5KB 3
    NTE5907
    NTE Electronics Silicon Power Rectifier Diode, 40 Amp Original PDF 26.51KB 3
    NTE5908
    NTE Electronics Silicon Power Rectifier Diode, 16 Amp Original PDF 23.59KB 2
    NTE5909
    NTE Electronics Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 800V. Average forward current 16A. Original PDF 23.6KB 2
    NTE5910
    NTE Electronics Silicon Power Rectifier Diode, 16 Amp Original PDF 23.59KB 2
    NTE5911
    NTE Electronics Silicon Power Rectifier Diode, 16 Amp Original PDF 23.6KB 2
    NTE5912
    NTE Electronics Silicon Power Rectifier Diode, 20 Amp Original PDF 23.59KB 2
    NTE5913
    NTE Electronics Silicon Power Rectifier Diode, 20 Amp Original PDF 23.59KB 2
    NTE5914
    NTE Electronics Silicon Power Rectifier Diode, 20 Amp Original PDF 23.59KB 2
    NTE5915
    NTE Electronics Silicon power rectifier diode. Anode to case. Max repetitive peak reverse voltage 100V. Average forward current 20A. Original PDF 23.59KB 2
    NTE5916
    NTE Electronics Silicon power rectifier diode. Cathode to case. Max repetitive peak reverse voltage 200V. Average forward current 20A. Original PDF 23.59KB 2
    NTE5917
    NTE Electronics Silicon Power Rectifier Diode, 20 Amp Original PDF 23.59KB 2

    NTE59 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp, DO5 Features: D High Surge Current Capability D High Voltage Available D Designed for a Wide Range of Applications D Available in Anode−to−Case or Cathode−to−Case Style Ratings and Characteristics:


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    NTE5906, NTE5907, NTE5980 NTE6005 PDF

    NTE5934

    Contextual Info: NTE5934 & NTE5935 Industrial Rectifier 75 Amp, Ultra High Power, Heavy Duty, Press Fit Features: D Available in Cathode−to−Case NTE5934 or Anode−to−Case (NTE5935) D Void Free Vacuum Die Soldering for Maximum Mechanical Strength and Heat Dissipation


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    NTE5934 NTE5935 NTE5934) NTE5935) NTE5934 PDF

    NTE5911

    Abstract: "Power rectifier Diode" 435a2s 10 AMP 1000V RECTIFIER DIODE NTE5892 NTE5899 NTE5900
    Contextual Info: NTE5892 thru NTE5899 NTE5900 thru NTE5911 Silicon Power Rectifier Diode, 16 Amp, DO4 Description and Features: The NTE5892 through NTE5911 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.


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    NTE5892 NTE5899 NTE5900 NTE5911 NTE5911 "Power rectifier Diode" 435a2s 10 AMP 1000V RECTIFIER DIODE NTE5899 PDF

    NTE5980

    Abstract: NTE5906 NTE5907 NTE6005 "Power rectifier Diode"
    Contextual Info: NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp, DO5 Features: D High Surge Current Capability D High Voltage Available D Designed for a Wide Range of Applications D Available in Anode−to−Case or Cathode−to−Case Style Ratings and Characteristics:


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    NTE5906, NTE5907, NTE5980 NTE6005 500Aal-Mechanical NTE5906 NTE5907 NTE6005 "Power rectifier Diode" PDF

    NTE597

    Contextual Info: NTE597 Silicon Rectifier Ultra Fast, 200V, 8A Description: The NTE597 is a silicon rectifier in a 2–Lead TO220 type package designed for use in switching power supplies, inverters and as free wheeling diodes. Features: D Ultrafast 50ns Recovery Time D 175°C Operating Junction Temperature


    Original
    NTE597 NTE597 PDF

    NTE5962

    Abstract: NTE5963 datasheets diode nte5963 NTE5966 NTE5967
    Contextual Info: NTE5962 & NTE5963 NTE5966 & NTE5967 Silicon Power Rectifier Diode, 25 Amp Features: D 25 Amp @ TC = +100°C D 300 Amp Surge Capability D Rugged Construction D Available in Standard NTE5962, NTE5966 and Reverse (NTE5963, NTE5967) Polarity Absolute Maximum Ratings:


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    NTE5962 NTE5963 NTE5966 NTE5967 NTE5962, NTE5966) NTE5963, NTE5967) NTE5963* NTE5962 NTE5963 datasheets diode nte5963 NTE5966 NTE5967 PDF

    NTE598

    Contextual Info: NTE598 Silicon Rectifier Ultra Fast, 600V, 8A Description: The NTE598 is a silicon rectifier in a 2–Lead TO220 type package designed for use in switching power supplies, inverters and as free wheeling diodes. Features: D Ultrafast 50ns Recovery Time D 175°C Operating Junction Temperature


    Original
    NTE598 NTE598 PDF

    NTE594

    Abstract: band switching diode
    Contextual Info: NTE594 Silicon Diode, Bandswitch Description: The NTE594 is a silicon band switching diode in an SOT–23 type surface mount package intended for thick and thin–film circuits. Absolute Maximum Ratings: Continuous Reverse Voltage, VR . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 35V


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    NTE594 NTE594 100mA 200mW 430K/W band switching diode PDF

    Contextual Info: NTE5930 & NTE5931 Silicon Power Rectifier Diode, 70 Amp, DO5 Description: The NTE5930 and NTE5931 are silicon power rectifier diodes in a DO5 type package designed with very low leakage current as well as good surge handling capability. These devices are ideal for a


    Original
    NTE5930 NTE5931 NTE5930 NTE5931 NTE5930, NTE5931* PDF

    NTE5980

    Abstract: NTE5906 NTE5907 NTE6005
    Contextual Info: NTE5906, NTE5907, NTE5980 thru NTE6005 Silicon Power Rectifier Diode, 40 Amp Features: D D D D High Surge Current Capability High Voltage Available Designed for a Wide Range of Applications Available in Anode–to–Case or Cathode–to–Case Style Ratings and Characteristics:


    Original
    NTE5906, NTE5907, NTE5980 NTE6005 50rmal NTE5906 NTE5907 NTE6005 PDF

    NTE6020

    Abstract: NTE5926 NTE5927 NTE6021 NTE6022 NTE6023 NTE6026 NTE6027 NTE6030 NTE6031
    Contextual Info: NTE5926, NTE5927, NTE6020 thru NTE6045 Industrial Silicon Rectifier, 60A Features: D Low Leakage Current D Good Surge Capability up to 1000A D Availavle in Standard and Reverse Polarity Absolute Maximum Ratings: TJ = –65°C to +175°C Maximum Repetitive Peak Reverse Voltage, VRRM


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    NTE5926, NTE5927, NTE6020 NTE6045 NTE6020, NTE6021* NTE6022, NTE6023* NTE6026, NTE6027* NTE5926 NTE5927 NTE6021 NTE6022 NTE6023 NTE6026 NTE6027 NTE6030 NTE6031 PDF

    493a2s

    Abstract: NTE5844 NTE584 10 AMP 1200V RECTIFIER DIODE NTE5845 NTE5912 NTE5933 NF-2A
    Contextual Info: NTE5844 & NTE5845, NTE5912 thru NTE5933 Silicon Power Rectifier Diode 20 Amp, DO4 Description and Features: The NTE5844, NTE5845, and NTE5912 through NTE5933 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.


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    NTE5844 NTE5845, NTE5912 NTE5933 NTE5844, NTE5933 493a2s NTE5844 NTE584 10 AMP 1200V RECTIFIER DIODE NTE5845 NF-2A PDF

    NTE5911

    Abstract: NTE5892 NTE5899 NTE5900
    Contextual Info: NTE5892 thru NTE5899 NTE5900 thru NTE5911 Silicon Power Rectifier Diode, 16 Amp Description and Features: The NTE5892 through NTE5911 are low power general purpose rectifier diodes in a DO4 type package designed for battery chargers, converters, power supplies, and machine tool controls.


    Original
    NTE5892 NTE5899 NTE5900 NTE5911 NTE5911 NTE5899 PDF

    NTE596

    Contextual Info: NTE596 Silicon Diode, Dual, Common Anode, High Speed Description: The NTE596 consists of two silicon diodes in an SOT–23 type surface mount package. The anodes are common and the device is intended for high–speed switching applications in thick and thin–film


    Original
    NTE596 NTE596 500mA PDF

    NTE5953

    Abstract: NTE5942 NTE5944 NTE5948 NTE5952 NTE5945 NTE5940 NTE5941 NTE5943 NTE5946
    Contextual Info: NTE5940 thru NTE5953 Silicon Power Rectifier Diode, 15 Amp Description and Features: D Low Thermal Impedance D High Case Temperarure D Excellent Reliability D Available in Anode–to–Case or Cathode–to–Case Style Ratings and Characteristics: Average Forward Current TC = +150°C Max , IF(AV) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15A


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    NTE5940 NTE5953 NTE5953 NTE5942 NTE5944 NTE5948 NTE5952 NTE5945 NTE5941 NTE5943 NTE5946 PDF

    NTE593

    Contextual Info: NTE593 Silicon Diode, High Speed Switch Description: The NTE593 is a silicon epitaxial high–speed diode in an SOT–23 type surface mount package. This device is intended for high–speed switching in hybrid thick–film circuits. Absolute Maximum Ratings:


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    NTE593 NTE593 500mA 150mA PDF

    NTE58

    Abstract: NTE59
    Contextual Info: NTE58 NPN & NTE59 (PNP) Silicon Complementary Transistors High Power Audio Output Features: D High Power Dissipation D Wide Safe Operating Area Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector–Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200V


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    NTE58 NTE59 NTE58 NTE59 PDF

    NTE5804

    Abstract: NTE5832 nte599
    Contextual Info: INDUSTRIAL RECTIFIERS Maximum Average Rectified Forward Current Ip In Amperes P RV 3A Volts 50 NTE5800 50 100 NTE5801 100 200 NTE5802 200 300 NTE5803 300 NTE5804 400 400 500 NTE5852 NTE5833* NTE5834 20A NTE5912 25A NTE5980 40A NTE5871* NTE5941* NTE5893* NTE5913*


    OCR Scan
    NTE5852 NTE5834 NTE5940 NTE5892 NTE5912 NTE5980 NTE5851* NTE5832 NTE5870 NTE5850 NTE5804 NTE5832 nte599 PDF

    Contextual Info: NTE590 & NTE591 Dual Switching Diode Features: D Available in Common Cathode NTE590 and Common Anode (NTE591) D Low Capacitance D Fast Recovery Time D Low Leakage D High Conductance Absolute Maximum Ratings: Non−Repetitive Peak Reverse Voltage, VRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V


    Original
    NTE590 NTE591 NTE590) NTE591) PDF

    NTE595

    Contextual Info: NTE595 Silicon Diode, Dual, Common Cathode, High Speed Description: The NTE595 consists of two silicon diodes in an SOT–23 type surface mount package. The cathodes are common and the device is intended for high–speed switching applications in thick and thin–film


    Original
    NTE595 NTE595 500mA PDF

    NTE6044

    Abstract: NTE6023 NTE6042 NTE6035 NTE6026 NTE6022 nte6040 NTE6027 NTE6030 NTE6031
    Contextual Info: NTE5926, NTE5927, NTE6020 thru NTE6045 Industrial Silicon Rectifier 60 Amp, DO5 Features: D Low Leakage Current D Good Surge Capability up to 1000A D Availavle in Standard and Reverse Polarity Absolute Maximum Ratings: TJ = −65°C to +175°C Maximum Repetitive Peak Reverse Voltage, VRRM


    Original
    NTE5926, NTE5927, NTE6020 NTE6045 NTE6020, NTE6021* NTE6022, NTE6023* NTE6026, NTE6027* NTE6044 NTE6023 NTE6042 NTE6035 NTE6026 NTE6022 nte6040 NTE6027 NTE6030 NTE6031 PDF

    NTE5930

    Abstract: NTE5931 NTE59
    Contextual Info: NTE5930 & NTE5931 Silicon Power Rectifier Diode, 70 Amp Description: The NTE5930 and NTE5931 are silicon power rectifier diodes in a DO5 type package designed with very low leakage current as well as good surge handling capability. These devices are ideal for a


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    NTE5930 NTE5931 NTE5930 NTE5931 NTE5930, NTE5931* NTE59 PDF

    NTE591

    Abstract: NTE590
    Contextual Info: NTE590 & NTE591 Dual Switching Diode Features: D Available in Common Cathode NTE590 and Common Anode (NTE591) D Low Capacitance D Fast Recovery Time D Low Leakage D High Conductance Absolute Maximum Ratings: Non−Repetitive Peak Reverse Voltage, VRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V


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    NTE590 NTE591 NTE590) NTE591) 100mA NTE591 NTE590 PDF

    NTE590

    Abstract: NTE591 NTE59
    Contextual Info: NTE590 & NTE591 Dual Switching Diode Features: D Available in Common Cathode NTE590 and Common Anode (NTE591) D Low Capacitance D Fast Recovery Time D Low Leakage D High Conductance Absolute Maximum Ratings: Non−Repetitive Peak Reverse Voltage, VRM . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V


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    NTE590 NTE591 NTE590) NTE591) 100mA NTE590 NTE591 NTE59 PDF