NTE90 Search Results

NPN Monolithic Transistor Pair

Abstract: Darlington pair IC darlington pair transistor NTE904
Contextual Info: NTE904 Integrated Circuit General Purpose Transistor Array Two Isolated Transistors and a Darlington Connected Transistor Pair Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12−Lead TO5 type metal can. Two of the four transistors are connected in the Darlington

ic 339

Abstract: ic 339 datasheet NTE90 NTE91
Contextual Info: NTE90 NPN & NTE91 (PNP) Silicon Complementary Transistors General Purpose High Gain Amplifier Absolute Maximum Ratings: (TA = +25°C) Collector–Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V

Darlington pair IC

Abstract: NTE904 darlington pair transistor NPN Monolithic Transistor Pair
Contextual Info: NTE904 Integrated Circuit General Purpose Transistor Array Two Isolated Transistors and a Darlington Connected Transistor Pair Description: The NTE904 consists of four general purpose silicon NPN transistors on a common monolithic substrate in a 12–Lead TO5 type metal can. Two of the four transistors are connected in the Darlington

NTE941M

Abstract: NTE976 NTE909
Contextual Info: NTE976 Integrated Circuit Operational Amplifier Description: The NTE976 is a general purpose operational amplifier with the necessary frequency compensation built into a single 8–Lead DIP type package. Advanced processing techniques make the input currents a factor of ten lower than industry standards like the NTE909. Yet, it is a direct plug–in replacement for the NTE909 and the NTE941M.

NTE905

Abstract: nte902 top 204 NTE900 NTE901 12-LEAD NTE903
Contextual Info: N T E ELECTRONICS INC 55E I> bMaiSST DDQ5755 113 • NTE RCUITS T 8-Lead CMP, See Diag. 245 Balanced Differential DC Amp, Vcc = ±6V Dual, Low Power, JFET OP Amp, Vcc = 18V 9 9 - 6 | 10-Lead Metal Can, See Diag. 206 NTE900 Top View Output 2 Vcc M Output 1

NTE9099

Abstract: NTE9924 NTE9930 NTE9961 NTE9158 nte9093 NTE9800 NTE9135 NTE9157 NTE913
Contextual Info: INTEGRATED CIRCUITS - DTL SERIES DIODE TRANSISTOR LOGIC NTE9097, 14-Lead DIP, See Diag. 247 NTE9099 Dual J -K Flip-Flop (Power Drain = 34/28mA Max) Q1 □ Q1 Q GND Q NTE9157, 14-Lead DIP, See Diag. 247 NTE9158 Quad 2-Input Buffer,.Hex Inverter (Output Loading Factor = 25/27)

Contextual Info: NTE90 NPN & NTE91 (PNP) Silicon Complementary Transistors General Purpose High Gain Amplifier Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V

NTE909D

Abstract: NTE909
Contextual Info: NTE909 & NTE909D Integrated Circuits Operational Amplifier Description: These devices are monolithic operational amplifiers intended for general–purpose applications. Operation is completely specified over the range of voltages commonly used for these devices. The design, in addition to providing high gain, minimizes both offset voltages and bias currents. Further, the

NTE902

Abstract: operational transconductance amplifier
Contextual Info: NTE902 Integrated Circuit Operational Transconductance Amplifier Description: The NTE902 has a differential input and a single–ended, push–pull, class A output. In addition there is a bias input for linear gain control, whose transconductance gm is directly proportional to the amplifier bias current (IABC).

NTE90

Abstract: NTE91
Contextual Info: NTE90 NPN & NTE91 (PNP) Silicon Complementary Transistors General Purpose High Gain Amplifier Absolute Maximum Ratings: (TA = +25°C unless otherwise specified) Collector−Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 120V

nte9093

Abstract: NTE9094 k1213
Contextual Info: NTE9093 & NTE9094 Integrated Circuit Diode Transistor Logic DTL Dual J−K Flip−Flop Absolute Maximum Ratings: (Above which useful life may be impaired) VCC Pin, Potential to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.5 to +8.0V

Contextual Info: INTEGRATED CIRCUITS - DTL SERIES DIODE TRANSISTOR LOGIC NTE9093, 14-Lead DIP, See Diag. 247 NTE9094 Dual J -K Flip-Flop (Power Drain = 28/34mA Max) NTE9097, 14-Lead DIP, See Diag. 247 NTE9099 Dual J -K Flip-Flop (Power Drain = 34/28mA Max) NTE9135 Hex Inverter

NTE9099

Abstract: NTE9813 nte9803 NTE9158 NTE9808 NTE913
Contextual Info: •y- b 4 3 1 5 S ci 000217^ 1 17E N T E ELE CTRONICS INC T-90-01 DIODE TRANSISTOR LOGIC DUAL J-K FLIP-FLOP ; 14-LEAD DIP, SHE DIAQ 247 NTE9093, NTE9094 .' DUAL J-K FLIP-FLOP HEX INVERTER NTE9097, NTE9099 Ü - > CP1— K1— J1— SD1— GT— 1 2 3 4 5

NTE906

Abstract: J307 I9 transistor
Contextual Info: NTE906 Integrated Circuit Dual, High Frequency, Differential Amplifier Description: The NTE906 is an integrated circuit in a 12–Lead TO5 type package consisting of two independent differential amplifiers with associated constant–current transistors on a common monolithic substrate. The six transistors which comprise the amplifiers are general–purpose devices which exhibit

NTE907

Contextual Info: NTE907 Integrated Circuit Diode Array Description: The NTE907 consists of six ultra–fast, low capacitance diodes on a common monolithic substrate. Five of the diodes are independently accessible, with the sixth sharing a common terminal with the substrate. The NTE907 comes in a 12–Lead TO5 type package.

NTE910

Abstract: NTE911 NTE907 voltage comparator
Contextual Info: N T E ELE CTRONICS INC Œ 3 Q fl^ 0 52E D ^431251 DD027S3 DSM • NTE M ED ClRGS f f g - 14-Lead DtP, See Nag. 247 12-Lead Metal Can, See Wag. 204 12 Volt OP Amp, Vcc = +20V Diode Array 97-01 NTE907 Top View Anode D i Phase Compensation Phase Compensation

nte9093

Abstract: "J-K Flip flop" NTE9094 NTE909
Contextual Info: NTE9093 & NTE9094 Integrated Circuit Diode Transistor Logic DTL Dual J–K Flip–Flop Absolute Maximum Ratings: (Above which useful life may be impaired) VCC Pin, Potential to GND . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –0.5 to +8.0V

NTE908

Abstract: NTE909 NTE902 top 204 NTE909D
Contextual Info: LINEAR INTEGRATED CIRCUITS NTE900 10-Lead Metal Can, See Diag. 206 Balanced Differential DC Amp, NTE902 8-Lead Metal Can, See Diag. 200 Operational Transconductance Amp, Vcc = ±6V V c c = 36V NTE903 12-Lead Metal Can, See Diag. 204 OP Amp, Vc c = ±20V Top View

NTE4017B

Abstract: NTE977 IRF 707 NTE7400 NTE4001B NTE74C14 NTE5402 NTE997 P405W NTE955M
Contextual Info: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor

20000 watt schematics power amp

Abstract: PCB-386 TRANSISTORS wb01 NTE102A 300 watts amplifier schematics MICA WAFER cadstar pcb WV01 PCB layout OrCad 9.2 hifi power amp schematic
Contextual Info: NTE Electronics Software, Thermo-Pads, Insulator Kits, Transistors Ivex View WinBoard and WinDraft for Windows Ivex Gerber viewer makes it easy to check your photo plots before making expensive film. Viewer reads Gerber files from your WinBoard ª PCB software and over 20

NTE941

Abstract: NTE909 NTE924 NTE924M OR-55 voltage follower
Contextual Info: NTE924 & NTE924M Integrated Circuit Voltage Follower, Operational Amplifier Description: The NTE924 and NTE924M are monolithic operational amplifiers internally connected as unity–gain non–inverting amplifiers. These devices use super–gain transistors in the input stage to get low bias

NTE94

Abstract: NTE941 NTE924
Contextual Info: NTE924 & NTE924M Integrated Circuit Voltage Follower, Operational Amplifier Description: The NTE924 and NTE924M are monolithic operational amplifiers internally connected as unity–gain non–inverting amplifiers. These devices use super–gain transistors in the input stage to get low bias

NTE918M

Abstract: NTE909D NTE918SM NTE909 NTE918
Contextual Info: NTE918 NTE918M NTE918SM Integrated Circuit High Speed Operational Amplifier Description: The NTE918, NTE918M, and the NTE918SM are precision high speed operational amplifier designed for applications requiring wide bandwidth and high slew rate. These devices have internal unity gain frequency compensation. This considerably simplifies its application since no external components are necessary for operation. However, unlike most internally compensated amplifiers, external

Contextual Info: Maximum Breakdown Voltage Diag. No. Collector to Base Volts Collector to Emitter (Volts) Emitter to Base (Volts) •c BVCBO BV ceo BVeb0 hFE Pd fT TO63 15 20 150 90 7 20 Min 200 20 High Current Amp, Fast Switch TO61 Isol 16 10 120 100 6 30 Min 115 30 NPN-Si