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    Untitled

    Abstract: No abstract text available
    Text: MG50D2DM1 Transistors Independent MOSFET Power Module Circuits Per Package2 V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)50 Absolute Max. Power Diss. (W)300 Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case I(DSS) Min. (A) I(GSS) Max. (A)150n @V(GS) (V) (Test Condition)20


    Original     		PDF MG50D2DM1 time900n HL080HD5 Code4-310 NumberTR00400310

    Untitled

    Abstract: No abstract text available
    Text: MG30G2DM1 Transistors Independent MOSFET Power Module Circuits Per Package2 V BR DSS (V)450 V(BR)GSS (V)20 I(D) Max. (A)30 Absolute Max. Power Diss. (W)250 Maximum Operating Temp (øC)150õ Thermal Resistance Junc-Case I(DSS) Min. (A) I(GSS) Max. (A)100n @V(GS) (V) (Test Condition)20


    Original     		PDF MG30G2DM1 time700n HL093HD5 Code4-310 NumberTR00400310

    Untitled

    Abstract: No abstract text available
    Text: MG30D2DM1 Transistors Independent MOSFET Power Module Circuits Per Package2 V BR DSS (V)250 V(BR)GSS (V)20 I(D) Max. (A)30 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case I(DSS) Min. (A) I(GSS) Max. (A)100n @V(GS) (V) (Test Condition)20


    Original     		PDF MG30D2DM1 time900n HL093HD5 Code4-310 NumberTR00400310

    Untitled

    Abstract: No abstract text available
    Text: MG50G2DM1 Transistors Independent MOSFET Power Module Circuits Per Package2 V BR DSS (V)450 V(BR)GSS (V)20 I(D) Max. (A)50 Absolute Max. Power Diss. (W)400 Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case I(DSS) Min. (A) I(GSS) Max. (A)150n @V(GS) (V) (Test Condition)20


    Original     		PDF MG50G2DM1 time700n HL093HD5 Code4-310 NumberTR00400310