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    NVD4806N Search Results

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    NVD4806N Price and Stock

    onsemi NVD4806NT4G

    MOSFET N-CH 30V 76A DPAK
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    DigiKey NVD4806NT4G Reel
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    NVD4806NT4G Digi-Reel 1
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    NVD4806NT4G Cut Tape
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    Avnet Americas NVD4806NT4G Reel 0 Weeks, 2 Days 2,174
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    Rochester Electronics NVD4806NT4G 38,679 1
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    Flip Electronics NVD4806NT4G 2,500
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    Rochester Electronics LLC NVD4806NT4G

    N-CHANNEL, MOSFET
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    DigiKey NVD4806NT4G Bulk 784
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    Flip Electronics NVD4806NT4G

    N-CHANNEL 30 V 11.3A (TA), 79A (
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    DigiKey NVD4806NT4G Reel 2,500
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    NVD4806NT4G Reel 2,500
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    onsemi NVD4806NT4G-VF01

    MOSFET N-CH 30V 11.3A/79A DPAK
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    Rochester Electronics NVD4806NT4G-VF01 2,500 1
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    Rochester Electronics LLC NVD4806NT4G-VF01

    NVD4806 - SINGLE N-CHANNEL POWER
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    DigiKey NVD4806NT4G-VF01 Bulk 717
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    NVD4806N Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NVD4806NT4G On Semiconductor NVD4806N - Power MOSFET 30V 76A 6 mOhm Single N-Channel DPAK Original PDF
    NVD4806NT4G-VF01 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 30V 76A DPAK Original PDF

    NVD4806N Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4806N


    Original     		PDF NTD4806N, NVD4806N NTD4806N/D

    4806n

    Abstract: NTD4806NT4G 4806ng 48 06ng 369ad
    Text: NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4806N


    Original     		PDF NTD4806N, NVD4806N AEC-Q101 NTD4806N/D 4806n NTD4806NT4G 4806ng 48 06ng 369ad

    Untitled

    Abstract: No abstract text available
    Text: NTD4806N, NVD4806N Power MOSFET 30 V, 76 A, Single N−Channel, DPAK/IPAK Features • • • • • Low RDS on to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses AEC−Q101 Qualified and PPAP Capable − NVD4806N


    Original     		PDF NTD4806N, NVD4806N NTD4806N/D