NXP TRANSISTOR SMD 13 Search Results
NXP TRANSISTOR SMD 13 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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BLM15PX181BH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 180ohm POWRTRN |
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BLM15PX221SH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 220ohm POWRTRN |
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BLM21HE601SH1L | Murata Manufacturing Co Ltd | FB SMD 0805inch 600ohm POWRTRN |
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DLW21SH670HQ2L | Murata Manufacturing Co Ltd | CMC SMD 67ohm 320mA POWRTRN |
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BLM15PX800BH1D | Murata Manufacturing Co Ltd | FB SMD 0402inch 80ohm POWRTRN |
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NXP TRANSISTOR SMD 13 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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transistor K 1352
Abstract: C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB 30RF35 BLF6G27-135 BLF6G27LS-135 C4532X7R1H475M RF35 722 smd transistor
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BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 transistor K 1352 C5750X7R1H106M TRANSISTOR K 135 VJ1206Y104KXB 30RF35 C4532X7R1H475M RF35 722 smd transistor | |
30RF35
Abstract: VJ1206Y104KXB smd transistor equivalent table
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BLF6G27-135; BLF6G27LS-135 ACPR885k ACPR1980k IS-95 BLF6G27-135 BLF6G27LS-135 30RF35 VJ1206Y104KXB smd transistor equivalent table | |
transistor d 1302
Abstract: smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component
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BLS6G2933S-130 BLS6G2933S-130 transistor d 1302 smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component | |
amplifier TRANSISTOR 12 GHZ
Abstract: smd transistor w J 3 58 smd transistor equivalent table smd transistor 927
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BLS6G2933S-130 BLS6G2933S-130 amplifier TRANSISTOR 12 GHZ smd transistor w J 3 58 smd transistor equivalent table smd transistor 927 | |
C4532X7R1E475M
Abstract: AVX12065C224K BLF6G22LS-130 GRM217BR71H104KA11L RO4350B capacitor 220 uf
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BLF6G22LS-130 BLF6G22LS-130 C4532X7R1E475M AVX12065C224K GRM217BR71H104KA11L RO4350B capacitor 220 uf | |
BLF6G20-110
Abstract: BLF6G20LS-110 RF35
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BLF6G20-110; BLF6G20LS-110 BLF6G20-110 BLF6G20LS-110 RF35 | |
BLF6G10LS-135RN
Abstract: 2360D BLF6G10-135RN RF35 1961 30 TRANSISTOR
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BLF6G10-135RN; BLF6G10LS-135RN BLF6G10-135RN 10LS-135RN BLF6G10LS-135RN 2360D RF35 1961 30 TRANSISTOR | |
Contextual Info: BLF6G10-135RN; BLF6G10LS-135RN Power LDMOS transistor Rev. 02 — 21 January 2010 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance |
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BLF6G10-135RN; BLF6G10LS-135RN BLF6G10-135RN 10LS-135RN | |
Contextual Info: BLF644P Broadband power LDMOS transistor Rev. 2 — 27 June 2014 Product data sheet 1. Product profile 1.1 General description A 70 W LDMOS RF power transistor for broadcast transmitter, communications and industrial applications. The transistor is suitable for the frequency range HF to 1300 MHz. |
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BLF644P | |
2360d
Abstract: BLF6G10-135RN BLF6G10LS-135RN RF35 SMD TRANSISTOR LIST
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BLF6G10-135RN; BLF6G10LS-135RN BLF6G10-135RN 10LS-135RN 2360d BLF6G10LS-135RN RF35 SMD TRANSISTOR LIST | |
Contextual Info: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance |
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BLS6G2933S-130 BLS6G2933S-130 | |
Contextual Info: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 03 — 3 March 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance |
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BLS6G2933S-130 BLS6G2933S-130 | |
transistor j449
Abstract: SOT113 JESD625-A 001aam267
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BLL6H0514L-130; BLL6H0514LS-130 BLL6H0514L-130 0514LS-130 transistor j449 SOT113 JESD625-A 001aam267 | |
Contextual Info: BLF10M6135; BLF10M6LS135 Power LDMOS transistor Rev. 1 — 24 June 2014 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for industrial applications at frequencies from 700 MHz to 1000 MHz. Table 1. Typical performance |
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BLF10M6135; BLF10M6LS135 BLF10M6135 | |
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JESD625-AContextual Info: BLL6H0514L-130; BLL6H0514LS-130 LDMOS driver transistor Rev. 1 — 9 August 2010 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS transistor intended for pulsed applications in the 0.5 GHz to 1.4 GHz range. Table 1. Application information |
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BLL6H0514L-130; BLL6H0514LS-130 BLL6H0514L-130 0514LS-130 JESD625-A | |
sot1121a
Abstract: J226 SMD
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BLF7G21L-160P; BLF7G21LS-160P BLF7G21L-160P 7G21LS-160P sot1121a J226 SMD | |
Contextual Info: BLF7G21L-160P; BLF7G21LS-160P Power LDMOS transistor Rev. 2 — 13 October 2011 Product data sheet 1. Product profile 1.1 General description 160 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2050 MHz. Table 1. Typical performance |
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BLF7G21L-160P; BLF7G21LS-160P BLF7G21L-160P 7G21LS-160P | |
Contextual Info: PBSS5620PA 20 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 13 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with |
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PBSS5620PA OT1061 PBSS4620PA. PBSS5620PA | |
ATC100B
Abstract: AVX1206 BLF7G22LS-130 RO4350 PLW70 TRANSISTOR BC 338 SMD
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BLF7G22L-130N ATC100B AVX1206 BLF7G22LS-130 RO4350 PLW70 TRANSISTOR BC 338 SMD | |
j310 replacement
Abstract: 26275
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BLF7G27L-135 j310 replacement 26275 | |
Contextual Info: BLF7G27L-135 Power LDMOS transistor Rev. 2 — 26 March 2012 Product data sheet 1. Product profile 1.1 General description 135 W LDMOS power transistor for base station applications at frequencies from 2600 MHz to 2700 MHz. Table 1. Typical performance Typical RF performance at Tcase = 25 C in a common source class-AB production test circuit. |
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BLF7G27L-135 | |
ATC100B
Abstract: avx1206 BLF7G22L-130 BLF7G22LS-130 RO4350 transistor BC 185
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BLF7G22L-130; BLF7G22LS-130 BLF7G22L-130 7G22LS-130 ATC100B avx1206 BLF7G22LS-130 RO4350 transistor BC 185 | |
PBSS5620PAContextual Info: PBSS5620PA 20 V, 6 A PNP low VCEsat BISS transistor Rev. 01 — 13 April 2010 Product data sheet 1. Product profile 1.1 General description PNP low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with |
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PBSS5620PA OT1061 PBSS4620PA. PBSS5620PA | |
Contextual Info: BLF7G22L-130; BLF7G22LS-130 Power LDMOS transistor Rev. 2 — 4 October 2010 Product data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance |
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BLF7G22L-130; BLF7G22LS-130 BLF7G22L-130 7G22LS-130 |