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    NYC0102BLT1G Search Results

    NYC0102BLT1G Datasheets (1)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    NYC0102BLT1G
    		On Semiconductor 0.25A SOT23 SCR Original PDF 94.91KB 5
    SF Impression Pixel

    NYC0102BLT1G Price and Stock

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    Littelfuse Inc NYC0102BLT1G

    SCR 200V 250MA SOT23-3
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    DigiKey () NYC0102BLT1G Cut Tape 114,249 1
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    NYC0102BLT1G Digi-Reel 114,249 1
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    NYC0102BLT1G Reel 114,000 3,000
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    Mouser Electronics NYC0102BLT1G 67,594
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    Newark NYC0102BLT1G Cut Tape 942 1
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    TTI NYC0102BLT1G Reel 132,000 3,000
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    TME NYC0102BLT1G 2,955 3
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    Chip 1 Exchange NYC0102BLT1G 3,894
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    Chip One Stop NYC0102BLT1G Cut Tape 1,824 0 Weeks, 1 Days 5
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    New Advantage Corporation NYC0102BLT1G 24,000 1
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    Win Source Electronics NYC0102BLT1G 119,252
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    onsemi SZNYC0102BLT1G

    - Tape and Reel (Alt: SZNYC0102BLT1G)
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    Avnet Americas SZNYC0102BLT1G Reel 111 Weeks 3,000
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    Vyrian SZNYC0102BLT1G 521
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    onsemi NYC0102BLT1G

    NYC0102BLT1G, Silicon Controlled Rectifier, 200V 0.25A, 200uA 3-Pin, SOT-23
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    RS NYC0102BLT1G Bulk 50
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    Vyrian NYC0102BLT1G 46,510
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    LTLF NYC0102BLT1G

    SILICON CONTROLLED RECTIFIER, 0.25A I(T)RMS, 200V V(DRM), 200V V(RRM), 1 ELEMENT, TO-236AB
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    Quest Components NYC0102BLT1G 80
    • 1 $1.75
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    • 100 $0.88
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    Littelfuse Inc NYC0102BLT1G-

    THYRISTOR DIS.SINGLE 250mA 200V SOT23 SMT
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    New Advantage Corporation NYC0102BLT1G- 493 1
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    NYC0102BLT1G Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: NYC0102BLT1G Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed and tested for highly−sensitive triggering in low-power switching applications. http://onsemi.com Features • • • • • High dv/dt Gating Current < 200 mA


    Original     		NYC0102BLT1G NYC0102BL/D PDF

    rgk 20/1

    Abstract: NYC0102BLT1G marking a2s sot-23 c2b SOT-23
    Contextual Info: NYC0102BLT1G Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed and tested for highly−sensitive triggering in low-power switching applications. http://onsemi.com Features • • • • • High dv/dt Gating Current < 200 mA


    Original     		NYC0102BLT1G OT-23 NYC0102BL/D rgk 20/1 NYC0102BLT1G marking a2s sot-23 c2b SOT-23 PDF

    Contextual Info: NYC0102BLT1G Preferred Device Product Preview Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed and tested for highly-sensitive triggering in low-power switching applications. Features http://onsemi.com 0.25 AMP, 200 VOLT SCRs


    Original     		NYC0102BLT1G OT-23 NYC0102BL/D PDF

    c2b SOT-23

    Abstract: NYC0102BLT1G C2B sot23
    Contextual Info: NYC0102BLT1G Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed and tested for highly−sensitive triggering in low-power switching applications. http://onsemi.com Features • • • • • High dv/dt Gating Current < 200 mA


    Original     		NYC0102BLT1G OT-23 NYC0102BL/D c2b SOT-23 NYC0102BLT1G C2B sot23 PDF

    Contextual Info: NYC0102BLT1G Sensitive Gate Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed and tested for highly−sensitive triggering in low-power switching applications. http://onsemi.com Features • • • • • High dv/dt Gating Current < 200 mA


    Original     		NYC0102BLT1G NYC0102BL/D PDF