O1899 Search Results

ZO 410 NF

Abstract: 2SC5489 IC 3899 ic 4553
Contextual Info: 注文コード No. N 6 3 3 9 2SC5489 No. N 6 3 3 9 O1899 新 2SC5489 特長 NPN エピタキシァルプレーナ形シリコントランジスタ VHF ~ UHF 広帯域低雑音増幅用 ・低雑音である：NF=1.2dB typ f=1GHz 。 ・高利得である：⏐S21e⏐2=13dB typ(f=1GHz)。

d 5287

Abstract: 2SC5264
Contextual Info: Ordering number:ENN5287 NPN Triple Diffused Planar Silicon Transistor 2SC5264 Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process. unit:mm

transistor 2sc5296

Abstract: 2sc5296 equivalent 2sc5296 SANYO Electric
Contextual Info: Ordering number:ENN5290A NPN Triple Diffused Planar Silicon Transistor 2SC5296 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability Adoption of HVP process .

2SC5264

Abstract: 2SC5264LS 2079d
Contextual Info: Ordering number:ENN5287A NPN Triple Diffused Planar Silicon Transistor 2SC5264LS Inverter Lighting Applications Features Package Dimensions • High breakdown voltage VCBO=1000V . · High reliability (Adoption of HVP process). · Adoption of MBIT process.

ac 0624 transistor 17-33

Abstract: 6221 ic 2SC5501
Contextual Info: Ordering number:ENN6221 NPN Epitaxial Planar Silicon Transistor 2SC5501 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions • Low noise : NF=1.0dB typ f=1GHz . · High gain : ⏐S21e⏐2=13dB typ (f=1GHz). · High cutoff frequency : fT=7GHz typ.

transistor 2sc5296

Abstract: 2sc5296
Contextual Info: Ordering number:ENN5290A NPN Triple Diffused Planar Silicon Transistor 2SC5296 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability Adoption of HVP process .

transistor 2sc5297

Abstract: 2SC5297 52914
Contextual Info: Ordering number:ENN5291 NPN Triple Diffused Planar Silicon Transistor 2SC5297 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability Adoption of HVP process .

2SC5503

Abstract: IC163
Contextual Info: Ordering number:ENN6222 NPN Epitaxial Planar Silicon Transistor 2SC5503 VHF to UHF Low-Noise Wide-Band Amplifier Applications Package Dimensions unit:mm 2161 [2SC5503] 0.65 0.65 0.15 3 0 to 0.1 1.25 2.1 0.3 4 0.425 2 0.6 0.65 0.5 2.0 1 : Emitter 2 : Collector

ac 0624 transistor 17-33

Abstract: 2SC5501 TA-1710
Contextual Info: Ordering number:ENN6221 NPN Epitaxial Planar Silicon Transistor 2SC5501 VHF to UHF Low-Noise Wide-Band Amplifier Applications Package Dimensions unit:mm 2161 [2SC5501] 0.65 0.65 0.15 3 0 to 0.1 1.25 2.1 0.3 4 0.425 2 0.6 0.65 0.5 2.0 1 : Emitter 2 : Collector

56204

Abstract: 2SK2616
Contextual Info: Ordering number:ENN5620B N-Channel Silicon MOSFET 2SK2616 Ultrahigh-Speed Switching Applications Features Package Dimensions • Low ON-resistance. · Low Qg. unit:mm 2083B [2SK2616] 2.3 1.5 6.5 5.0 0.5 7.0 5.5 4 1.2 7.5 0.8 1.6 0.85 0.7 0.6 0.5 1 2 3 2.3 2.3

Contextual Info: 5LP02M Ordering number : EN6126A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 5LP02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C

ce 2826 ic

Abstract: IC 4305 2SC5504 TA1703
Contextual Info: Ordering number:ENN6223 NPN Epitaxial Planar Silicon Transistor 2SC5504 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : ⏐S21e⏐2=11dB typ (f=1GHz).

TA1703

Abstract: ce 2826 ic TA17-03 2SC5504 IC163 TA-1703 2SC550
Contextual Info: Ordering number:ENN6223 NPN Epitaxial Planar Silicon Transistor 2SC5504 UHF to S Band Low-Noise Amplifier Applications Features Package Dimensions • Low noise : NF=0.9dB typ f=1GHz . : NF=1.4dB typ (f=1.5GHz). · High gain : S21e2=11dB typ (f=1GHz).

5LP02M

Contextual Info: 5LP02M Ordering number : EN6126A SANYO Semiconductors DATA SHEET P-Channel Silicon MOSFET 5LP02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C

Contextual Info: Ordering number:ENN5291 NPN Triple Diffused Planar Silicon Transistor 2SC5297 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability Adoption of HVP process .

Contextual Info: 5LP02M Ordering number : EN6126A P-Channel Silicon MOSFET 5LP02M General-Purpose Switching Device Applications Features • • • Low ON-resistance. High-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions

A1267

Abstract: ph1-12 1PI3 A12670
Contextual Info: Ordering number : ENN*6282 LC99350 2/5-Inch Frame Transfer CCD 1.1M Pixel Color Image Sensor Preliminary Overview The LC99350 is a low-cost frame transfer CCD chargecoupled device solid-state imaging element that features 1.1M pixels in a 2/5-inch optical size. It supports both

EN5311

Abstract: 2SD2261 7007B-004 2SD226 marking DR
Contextual Info: 2SD2261 Ordering number : EN5311B SANYO Semiconductors DATA SHEET 2SD2261 NPN Epitaxial Planar Silicon Transistor Driver Applications Applications • Motor drivers, printer hammer drivers, relay drivers. Features • • • • Darlington connection. High DC current gain.

2SC5503

Contextual Info: Ordering number:ENN6222 NPN Epitaxial Planar Silicon Transistor 2SC5503 VHF to UHF Low-Noise Wide-Band Amplifier Applications Features Package Dimensions • Low noise : NF=1.2dB typ f=1GHz . · High gain : ⏐S21e⏐2=15dB typ (f=1GHz). · High cutoff frequency : fT=9.0GHz typ.

Contextual Info: Ordering number:ENN5290A NPN Triple Diffused Planar Silicon Transistor 2SC5296 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability Adoption of HVP process .