O257AA Search Results

IRHY597130CM

Abstract: IRHY593130CM T0-257AA
Contextual Info: PD - 94343 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY597130CM 100V, P-CHANNEL 4# TECHNOLOGY c Product Summary Part Number Radiation Level RDS(on) ID IRHY597130CM 100K Rads (Si) 0.215Ω -12.5A IRHY593130CM 300K Rads (Si) 0.215Ω -12.5A International Rectifier’s R5TM technology provides

16CYQ100C

Abstract: T0-257AA
Contextual Info: PD-94016A 16CYQ100C SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 16 Amp, 100V Major Ratings and Characteristics Description/Features Characteristics 16CYQ100C Units The 16CYQ100C center tap Schottky rectifier has been expressly designed to meet the rigorous requirements of reliability environments. It is

2N7625

Contextual Info: PD-97292A 2N7625T3 IRHLYS797034CM 60V, P-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA TECHNOLOGY ™ Product Summary Part Number Radiation Level IRHLYS797034CM 100K Rads (Si) RDS(on) ID 0.074Ω -20A* IRHLYS793034CM 0.074Ω -20A*

2N7594

Abstract: PD-97193A
Contextual Info: PD-97193A 2N7594T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67234CM 250V, N-CHANNEL TECHNOLOGY Product Summary Part Number IRHYS67234CM Radiation Level 100K Rads (Si) IRHYS63234CM 300K Rads (Si) RDS(on) I D 0.22Ω 12A 0.22Ω 12A

2n7607

Abstract: IRHLYS77034CM 2N760 IRHLYS73034CM IRHLYS797034CM 2N7607T3
Contextual Info: PD-97291 2N7607T3 IRHLYS77034CM 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA TECHNOLOGY ™ Product Summary Part Number IRHLYS77034CM Radiation Level 100K Rads (Si) RDS(on) 0.045Ω ID 20A* IRHLYS73034CM 300K Rads (Si)

Contextual Info: PD-94088B 10YQ045C JANS1N7045T3 JANTX1N7045T3 JANTXV1N7045T3 SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 10Amp, 45V Ref: MIL-PRF-19500/735 Major Ratings and Characteristics Characteristics Description/Features 1N7045T3 Units IF AV 10 A VRRM 45 V IFSM @ tp = 8.3ms half-sine

95818

Contextual Info: PD - 95818 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67230CM 200V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67230CM 100K Rads (Si) 0.13Ω ID 16A IRHYB63230CM 300K Rads (Si) 0.13Ω 16A IRHYB64230CM 600K Rads (Si)

2N7588T3

Abstract: 2N7588 isd 1710
Contextual Info: PD-96986A 2N7588T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67130CM 100K Rads (Si) RDS(on) I D 0.042Ω 20A* IRHYS63130CM 300K Rads (Si) 0.042Ω

JANSR2N7380

Abstract: IRHY3130CM IRHY4130CM IRHY7130CM IRHY8130CM
Contextual Info: PD - 91274D IRHY7130CM JANSR2N7380 100V, N-CHANNEL REF: MIL-PRF-19500/614 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA RAD-Hard HEXFET TECHNOLOGY Product Summary Part Number Radiation Level IRHY7130CM 100K Rads (Si) IRHY3130CM 300K Rads (Si)

irf 343

Abstract: IRHYB63130CM IRHYB67130CM isd 1710
Contextual Info: PD-95841A RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67130CM 100K Rads (Si) 0.042Ω ID 20A* IRHYB63130CM 300K Rads (Si) 20A* 0.042Ω Low-Ohmic

T0257AA

Abstract: IRHY57133CMSE JANSR2N7488T3 T0-257AA ERS 965
Contextual Info: PD - 94318C IRHY57133CMSE JANSR2N7488T3 130V, N-CHANNEL RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA REF: MIL-PRF-19500/705 5 TECHNOLOGY ™ Product Summary Part Number IRHY57133CMSE Radiation Level 100K Rads (Si) RDS(on) 0.09Ω I D QPL Part Number

Contextual Info: PD - 93981A 16SYQ045C SCHOTTKY RECTIFIER HIGH EFFICIENCY SERIES 16A, 45V Major Ratings and Characteristics Characteristics Description/Features 16SYQ045C Units IF AV 16 A VRRM 45 V IFSM @ tp = 8.3ms half-sine 250 A VF @ 16Apk, TJ =125°C 0.85 V TJ,Tstg Operating and storage -55 to 150

Contextual Info: PD-96986A 2N7588T3 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYS67130CM 100K Rads (Si) RDS(on) I D 0.042Ω 20A* IRHYS63130CM 300K Rads (Si) 0.042Ω

Contextual Info: PD-93823C RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY57234CMSE 250V, N-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number IRHY57234CMSE Radiation Level 100K Rads (Si) RDS(on) 0.41Ω ID 9.6A International Rectifier’s R5 TM technology provides

Contextual Info: PD-96911 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS597034CM 60V, P-CHANNEL 5 TECHNOLOGY ™ Product Summary Part Number Radiation Level RDS(on) IRHYS597034CM 100K Rads (Si) 0.087Ω IRHYS593034CM 300K Rads (Si) 0.087Ω ID -20A -20A

TRANSISTORS sec 537

Contextual Info: PD - 94197C POWER MOSFET THRU-HOLE TO-257AA IRFY9140, IRFY9140M 100V, P-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number RDS(on) ID Eyelets IRFY9140 0.20 Ω -15.8A Glass IRFY9140M 0.20 Ω -15.8A Glass HEXFET® MOSFET technology is the key to International

Contextual Info: PD - 94349A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRF5Y31N20 200V, N-CHANNEL Product Summary Part Number BVDSS IRF5Y31N20 200V RDS(on) 0.092Ω ID 18A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

Contextual Info: PD - 94222A 0.*$0; + Ultrafast, Soft Recovery Diode FRED Features • • • • • V4 = 200V Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Ceramic Eyelets I. 8 = 16A tHH = 35ns Description These Ultrafast, soft reovery diodes are optimized to reduce losses and EMI/RFI in high frequency power conditioning

2N7607T3

Contextual Info: PRELIMINARY PD-97291 2N7607T3 IRHLYS77034CM 60V, N-CHANNEL RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA TECHNOLOGY ™ Product Summary Part Number IRHLYS77034CM Radiation Level 100K Rads (Si) RDS(on) 0.045Ω ID 20A* IRHLYS73034CM

Contextual Info: PD-95841B RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level IRHYB67130CM 100K Rads (Si) RDS(on) I D 0.042Ω 20A* IRHYB63130CM 300K Rads (Si) 0.042Ω 20A* International Rectifier’s R6 TM technology provides

IRHYB63134CM

Abstract: IRHYB67134CM
Contextual Info: PD-96997 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYB67134CM 150V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYB67134CM 100K Rads (Si) 0.09Ω ID 19A IRHYB63134CM 300K Rads (Si) 19A 0.09Ω International Rectifier’s R6 TM technology provides

95837

Abstract: PD-95837 IRHY63C30CM IRHY67C30CM RG 2006 10A 600V
Contextual Info: PD-95837 RADIATION HARDENED POWER MOSFET THRU-HOLE TO-257AA IRHY67C30CM 600V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHY67C30CM 100K Rads (Si) 3.0Ω IRHY63C30CM 300K Rads (Si) 3.0Ω ID 3.4A 3.4A International Rectifier’s R6 TM technology provides

IRHYS63130CM

Abstract: IRHYS67130CM
Contextual Info: PD-96986 RADIATION HARDENED POWER MOSFET THRU-HOLE Low-Ohmic TO-257AA IRHYS67130CM 100V, N-CHANNEL TECHNOLOGY Product Summary Part Number Radiation Level RDS(on) IRHYS67130CM 100K Rads (Si) 0.042Ω ID 20A* IRHYS63130CM 300K Rads (Si) 20A* 0.042Ω International Rectifier’s R6 TM technology provides

Contextual Info: PD-94192D HEXFET POWER MOSFET THRU-HOLE TO-257AA IRL7Y1905C 50V, N-CHANNEL Product Summary Part Number BVDSS IRL7Y1905C 50V RDS(on) 0.11Ω ID 10A Seventh Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance