SDN8000G
Abstract: LQFP100 QFP100 SDN0080G
Text: DATA SHEET SDN8000G 80-Common Dot-matrix STN LCD Driver To improve design and/or performance, Avant Electronics may make changes to its products. Please contact Avant Electronics for the latest versions of its products data sheet v3 2005 Oct 03 SDN8000G
|
Original
|
PDF
|
SDN8000G
80-Common
SDN8000G
SDN0080G
80-segment
80-output
LQFP100
QFP100
SDN0080G
|
O41 DIODE
Abstract: No abstract text available
Text: SKM 145GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .T 2 RG S8 D8 .T 2 VGJ S8 .03+ 2 RGS8A * 5(+ %41(/<-+( +=(0-?-(F VHJJ 7 VBJ E .03+( 2 WJ S8 VRJ E RJJ E Y RJ 7 VJ ]+ .03+( 2 RG S8 V_J E .03+( 2 WJ S8 VJJ E RJJ E .T 2 VGJ S8 V_JJ E .03+( 2 RG S8
|
Original
|
PDF
|
145GB176D
O41 DIODE
|
BA159
Abstract: ba159 diode diode BA159 10A DIODE 1000C 500C
Text: BA159 Naina Semiconductor emiconductor Ltd. Fast Recovery Diode Diode, 1.0A Features • • • • • Diffused junction High efficiency Low forward voltage drop Low power loss High surge current capability Mechanical Characteristics • Case: Molded Plastic
|
Original
|
PDF
|
BA159
MIL-STD-202,
1000C
BA159
ba159 diode
diode BA159
10A DIODE
1000C
500C
|
df2 diode
Abstract: SAP1024B SEN6A39 diode df2 AVANT SAP1024B SAP1024 SEN6A39LQFP LQFP100 QFP100 SEN6A40
Text: DATA SHEET SEN6A39 80-COLUMN driver for dot-matrix STN LCD To improve design and/or performance, Avant Electronics may make changes to its products. Please contact Avant Electronics for the latest versions of its products data sheet v3 2005 Oct 20 SEN6A39
|
Original
|
PDF
|
SEN6A39
80-COLUMN
SEN6A39
80-COLUMN
SEN6A40
68-ROW
80-output
df2 diode
SAP1024B
diode df2
AVANT SAP1024B
SAP1024
SEN6A39LQFP
LQFP100
QFP100
|
Untitled
Abstract: No abstract text available
Text: RECTRON 1N4728B THRU 1N4757B SEMICONDUCTOR TECHNICAL SPECIFICATION 1W 5% DO-41 ZENER DIODE Absolute Maximun Ratings Ta=25oC Items Power Dissipation Power Derating (above 50 oC) Forward Voltage @If = 200 mA Vz Tolerence Junction Temp. Storage Temp. Dimensions
|
Original
|
PDF
|
1N4728B
1N4757B
DO-41
DO-41
1N4728A
1N4729A
1N4730A
1N4731A
1N4732A
|
1N4757A
Abstract: 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A
Text: RECTRON 1N4728A THRU 1N4757A SEMICONDUCTOR TECHNICAL SPECIFICATION 1W 5% DO-41 ZENER DIODE Absolute Maximun Ratings Ta=25oC Items Power Dissipation Power Derating (above 50 oC) Forward Voltage @If = 200 mA Vz Tolerence Junction Temp. Storage Temp. Dimensions
|
Original
|
PDF
|
1N4728A
1N4757A
DO-41
DO-41
1N4748A
1N4749A
1N4750A
1N4751A
1N4752A
1N4753A
1N4757A
1N4728A
1N4729A
1N4730A
1N4731A
1N4732A
1N4733A
1N4734A
|
TSP160C
Abstract: ER1602CT 727 thyristor uf1002ct PANJIT ER306 1N4004 SOD-123 272 zk thyristor mw 137 600g pg2010 D804C
Text: TABLE OF CONTENT THYRISTOR SURGE PROTECTION DEVICE • 50Amp 10/1000 µs Thyristor Surge Protection Device . Page 02 • 80Amp 10/1000 µs Thyristor Surge Protection Device . Page 04
|
Original
|
PDF
|
50Amp
80Amp
100Amp
375x360x390/390x240x420
375x360x390
O-252
TSP160C
ER1602CT
727 thyristor
uf1002ct
PANJIT ER306
1N4004 SOD-123
272 zk thyristor
mw 137 600g
pg2010
D804C
|
tms 3755
Abstract: MACH110 MACH111SP MACH211SP MACHpro cpld manual
Text: MACH 1 & 2 FAMILIES 1 MACH 1 & 2 Families MACH 1 and 2 Families High-Performance, Low Cost EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS ◆ High-performance, low-cost, electrically-erasable CMOS PLD families ◆ 32 to 128 macrocells 1250 to 5000 PLD gates
|
Original
|
PDF
|
5/6/7/10/12/15-ns
7/10/12/14/18-ns
PQL100
100-Pin
16-038-PQT-2
tms 3755
MACH110
MACH111SP
MACH211SP
MACHpro
cpld manual
|
ts 4141
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company DO-41 Hermetically Sealed Glass Axial Package Outline Package Drawing, Taping and Packaging Information Continental Device India Limited Data Sheet Page 1 of 3 Continental Device India Limited
|
Original
|
PDF
|
DO-41
DO-41,
C-120
ts 4141
|
Untitled
Abstract: No abstract text available
Text: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company DO-41 Hermetically Sealed Glass Axial Package Outline Package Drawing, Taping and Packaging Information Continental Device India Limited Data Sheet Page 1 of 3 Continental Device India Limited
|
Original
|
PDF
|
ISO/TS16949
DO-41
DO-41,
C-120
|
Untitled
Abstract: No abstract text available
Text: APPROVE SHEET Customer: Customer Part Number: 1N5334B~1N5378B PanJit Part Number: 1N5334B~1N5378B Approver Signature: APPROVED BY: Clock Huang PREPARED BY: Ivy Deng DATE: APR.12.2005 DATE: APR.12.2005 PANJIT INTERNATIONAL INC. TEL:886-7-6213121 FAX:886-7-6213129
|
Original
|
PDF
|
1N5334B
1N5378B
|
Untitled
Abstract: No abstract text available
Text: 1 MACH 5 FAMILY MACH 5 Family Fifth Generation MACH Architecture DISTINCTIVE CHARACTERISTICS ◆ ◆ ◆ ◆ ◆ ◆ ◆ Publication# 20446 Amendment/0 Rev: D Issue Date: August 1997 MACH 5 Family ◆ Fifth generation MACH architecture — 100% routable
|
Original
|
PDF
|
16-038-BGD352-1
DT106
|
tico 732
Abstract: TEA1012 CALIFORNIA MICRO DEVICES catalog O2 micro
Text: PRELIMINARY The MACH 5 Family Fifth Generation MACH Architecture V A N T I S The Programmable Logic Company From AMD DISTINCTIVE CHARACTERISTICS • Fifth generation MACH architecture — 100% routable — 5-V devices will not overdrive 3-V inputs safe for
|
Original
|
PDF
|
|
Untitled
Abstract: No abstract text available
Text: 1 MACH 5 FAMILY Back MACH 5 Family Fifth Generation MACH Architecture DISTINCTIVE CHARACTERISTICS ◆ Fifth generation MACH architecture ◆ ◆ ◆ ◆ ◆ ◆ Publication# 20446 Amendment/+1 Rev: D Issue Date: November 1997 MACH 5 Family ◆ — 100% routable
|
Original
|
PDF
|
16-038-BGD352-1
DT106
|
|
|
Untitled
Abstract: No abstract text available
Text: DIODES PROFESSIONAL GRADE GENERAL PURPOSE DIODES — CONTINENTAL DE V I C E INDIA 32E D trr 4 nseo; dissipation 250 mW; IPM=225 mA. AXIAL LEAD * • 23033^4 OOOOOlfl 3 m T - VR Co A»A max Volts PF max 0.1 0.1 0.1 5.0 5.0 20 30 40 50 75 4 4 20 20 20 - 20 20
|
OCR Scan
|
PDF
|
DO-35
|
TRANSISTOR TO-106
Abstract: TO-106 TO106
Text: ^ CONTINENTAL DEVICE INDIA 35E » • E s s a s i 0000051 3 ■ “p £ / - 0 ^ PROFESSIONAL GRADE GENERAL PURPOSE DIODES • R A D IA I, LEAD ‘ Device P IV VF@ IF IFM IR @ VR PTA trr Volts Volts mA mA MA Volts mW nsec Pf min max typ typ 5 1.2 50 150 0.1
|
OCR Scan
|
PDF
|
O-106
O-106
TRANSISTOR TO-106
TO-106
TO106
|
TRANSISTOR TO-106
Abstract: No abstract text available
Text: ZENER DIODES CONT INENTAL DEVICE INDIA 32E D • SHABBY GGDQÜ25 S ■ ¡ * 7 - / 7 - / / PROFESSIONAL GRADE APPLICATIONS f A X IA L LE A D Dissipation 500 mW; available in±10% tolerance. Add suffix A for ±5% tolerance Device Vz nominal Iz Volts mA ; IR
|
OCR Scan
|
PDF
|
lo-32
TRANSISTOR TO-106
|
IN4740
Abstract: 4728a
Text: 1N 4728A thru 1 N 4764A DO-41 G LA SS Microsemi Corp. ' The d io ûe experts SCOTTSDALE. AZ F o r more inform ation call: 602 941-6300 SILICON 1 WATT ZENER DIODES FEATURES • 3.3 THRU 100 VOLTS • HERMETIC GLASS PACKAGE • CONSULT FACTORY FOR VOLTAGES OVER 100 V
|
OCR Scan
|
PDF
|
DO-41
1N4728A
1N4729A
1N4730A
1N4731A
1N4732A
1N4733A
1N4734A
1N4735A
1N4736A
IN4740
4728a
|
TRANSISTOR BC 173
Abstract: transistor BC 327-25
Text: EPOXY TRANSISTORS CONTINENTAL DEVICE INDIA 3SE D • 83633^4 00QQQ1S ft ■ JL COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO hFE at bias 1C VCE ICM _Volts Volts Volts_ mA Volts mA Device_ min min min_ min/max_
|
OCR Scan
|
PDF
|
00QQQ1S
lo-32
TRANSISTOR BC 173
transistor BC 327-25
|
BF 331 TRANSISTORS
Abstract: CIL TRANSISTOR 331 CIL TRANSISTOR TRANSISTOR TO-106 CIL 167 CIL 331 CIL331 00000CH CIL TRANSISTOR 343 transistor Bf 331
Text: METALtCAN & EPOXY TRANSISTORS • CONTINENTAL DEVICE INDIA 32E D ■ 53033=14 00000CH 5 ■ 71 PROFESSIONAL GRADE APPLICATIONS Device VCEO VCBO VEBO Volts Volts Volts min min min IC hFE at bias VCE ICM PTA ICBO VCE sat fT mA - Volts mA mW MA Volts MHz max
|
OCR Scan
|
PDF
|
00000CH
BF 331 TRANSISTORS
CIL TRANSISTOR 331
CIL TRANSISTOR
TRANSISTOR TO-106
CIL 167
CIL 331
CIL331
CIL TRANSISTOR 343
transistor Bf 331
|
Untitled
Abstract: No abstract text available
Text: METAL-CAN & EPOXY TRANSISTORS CON TINENTAL DEVICE INDIA 3EE D • S3fl33T4 ODOQOlb T COMMERCIAL/ENTERTAINMENT APPLICATIONS Device VCEO VCBO VEBO hFE at bias Voíts Volts Volts min min min VCE ICM PTA ICBO VCE sat mA Volts mA mW max max 1C min/max typ Cob
|
OCR Scan
|
PDF
|
S3fl33T4
lo-32
|
transistor 2n 929
Abstract: transistor BF 697
Text: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA • S3033TM 00Û0010 T ■ PROFESSIONAL GRADE APPLICATIONS - Device VCEO VCBO VEBO Volts Volts Volts min min min hFE at bias IC mA VCE Volts min/max ICM mA max PTA mW max PTC W typ ICBO VCE sat fT Volts MHz PA
|
OCR Scan
|
PDF
|
S3033TM
lo-32
transistor 2n 929
transistor BF 697
|
Transistor NPN BC 549B
Abstract: transistor BC 147b bc 337-25 transistor transistor BC 547B Transistor - BC 547, CL 100 CIL TRANSISTOR 149b transistor transistor BC 337-25 TRANSISTOR BC 208 bc 106 transistor
Text: EPOXY TRANSISTORS •• CONTINENTA L DEVICE INDIA 3SE D • 0Q0D014 b COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO • Volts Volts Volts Device min • min min hFE at bias fr IC VCE ICM PTA ICBO VCE sat mA Volts mA mW MA Voits MHz max max typ 'typ
|
OCR Scan
|
PDF
|
0Q0D014
O-106
O-237
0000G3D
Transistor NPN BC 549B
transistor BC 147b
bc 337-25 transistor
transistor BC 547B
Transistor - BC 547, CL 100
CIL TRANSISTOR
149b transistor
transistor BC 337-25
TRANSISTOR BC 208
bc 106 transistor
|
CIL TRANSISTOR
Abstract: cil 612 npn transistor to106 TRANSISTOR TO-106 Transistor CIL 622 CIL622 CIL 167 transistor K 3565 TO-106 Transistor CIL 611
Text: EPOXY TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • 23033^4 00G00ÜÖ G ■ 'J l¡t 3/« ,/£ - PROFESSIONAL GRADE APPLICATIONS Device VCEO VCBO VEBO Volts Volts Volts min min min hFE at bias 1C VCE ICM PTA ICBO VCE sat fT mA Volts mA mW f»A Volts MHz max
|
OCR Scan
|
PDF
|
00G00Ü
O-106
CIL TRANSISTOR
cil 612 npn transistor
to106
TRANSISTOR TO-106
Transistor CIL 622
CIL622
CIL 167
transistor K 3565
TO-106
Transistor CIL 611
|
