O41 DIODE Search Results

SDN8000G

Abstract: LQFP100 QFP100 SDN0080G
Contextual Info: DATA SHEET SDN8000G 80-Common Dot-matrix STN LCD Driver To improve design and/or performance, Avant Electronics may make changes to its products. Please contact Avant Electronics for the latest versions of its products data sheet v3 2005 Oct 03 SDN8000G

O41 DIODE

Contextual Info: SKM 145GB176D Absolute Maximum Ratings Symbol Conditions IGBT 789, .T 2 RG S8 D8 .T 2 VGJ S8 .03+ 2 RGS8A * 5(+ %41(/<-+( +=(0-?-(F VHJJ 7 VBJ E .03+( 2 WJ S8 VRJ E RJJ E Y RJ 7 VJ ]+ .03+( 2 RG S8 V_J E .03+( 2 WJ S8 VJJ E RJJ E .T 2 VGJ S8 V_JJ E .03+( 2 RG S8

BA159

Abstract: ba159 diode diode BA159 10A DIODE 1000C 500C
Contextual Info: BA159 Naina Semiconductor emiconductor Ltd. Fast Recovery Diode Diode, 1.0A Features • • • • • Diffused junction High efficiency Low forward voltage drop Low power loss High surge current capability Mechanical Characteristics • Case: Molded Plastic

df2 diode

Abstract: SAP1024B SEN6A39 diode df2 AVANT SAP1024B SAP1024 SEN6A39LQFP LQFP100 QFP100 SEN6A40
Contextual Info: DATA SHEET SEN6A39 80-COLUMN driver for dot-matrix STN LCD To improve design and/or performance, Avant Electronics may make changes to its products. Please contact Avant Electronics for the latest versions of its products data sheet v3 2005 Oct 20 SEN6A39

N5401

Abstract: D0201AD N4935 DO-41 6R600 1N4140 D0-201AD DO41 1N4142 1N4007 DO-41 package
Contextual Info: INTERNATIONAL SEMICOND 4^E ]> • T00037Ô OOOOOll 471 B I S E » SCH OTTKY RECTIFIERS r Vrrm 7 O p e ra tin g a n d ^ S to ra g e Temp. R a n g e Type 1N5817 Package Volts DO-41 20 1.0 25 1N5818 1N5819 SR 120 DO-41 DO-41 DO-41 30 40 20 1.0 1.0 1.0 25 25

Contextual Info: RECTRON 1N4728B THRU 1N4757B SEMICONDUCTOR TECHNICAL SPECIFICATION 1W 5% DO-41 ZENER DIODE Absolute Maximun Ratings Ta=25oC Items Power Dissipation Power Derating (above 50 oC) Forward Voltage @If = 200 mA Vz Tolerence Junction Temp. Storage Temp. Dimensions

1N4757A

Abstract: 1N4728A 1N4729A 1N4730A 1N4731A 1N4732A 1N4733A 1N4734A
Contextual Info: RECTRON 1N4728A THRU 1N4757A SEMICONDUCTOR TECHNICAL SPECIFICATION 1W 5% DO-41 ZENER DIODE Absolute Maximun Ratings Ta=25oC Items Power Dissipation Power Derating (above 50 oC) Forward Voltage @If = 200 mA Vz Tolerence Junction Temp. Storage Temp. Dimensions

Contextual Info: DIODES PROFESSIONAL GRADE GENERAL PURPOSE DIODES — CONTINENTAL DE V I C E INDIA 32E D trr 4 nseo; dissipation 250 mW; IPM=225 mA. AXIAL LEAD * • 23033^4 OOOOOlfl 3 m T - VR Co A»A max Volts PF max 0.1 0.1 0.1 5.0 5.0 20 30 40 50 75 4 4 20 20 20 - 20 20

TRANSISTOR TO-106

Abstract: TO-106 TO106
Contextual Info: ^ CONTINENTAL DEVICE INDIA 35E » • E s s a s i 0000051 3 ■ “p £ / - 0 ^ PROFESSIONAL GRADE GENERAL PURPOSE DIODES • R A D IA I, LEAD ‘ Device P IV VF@ IF IFM IR @ VR PTA trr Volts Volts mA mA MA Volts mW nsec Pf min max typ typ 5 1.2 50 150 0.1

TRANSISTOR TO-106

Contextual Info: ZENER DIODES CONT INENTAL DEVICE INDIA 32E D • SHABBY GGDQÜ25 S ■ ¡ * 7 - / 7 - / / PROFESSIONAL GRADE APPLICATIONS f A X IA L LE A D Dissipation 500 mW; available in±10% tolerance. Add suffix A for ±5% tolerance Device Vz nominal Iz Volts mA ; IR

IN4740

Abstract: 4728a
Contextual Info: 1N 4728A thru 1 N 4764A DO-41 G LA SS Microsemi Corp. ' The d io ûe experts SCOTTSDALE. AZ F o r more inform ation call: 602 941-6300 SILICON 1 WATT ZENER DIODES FEATURES • 3.3 THRU 100 VOLTS • HERMETIC GLASS PACKAGE • CONSULT FACTORY FOR VOLTAGES OVER 100 V

TSP160C

Abstract: ER1602CT 727 thyristor uf1002ct PANJIT ER306 1N4004 SOD-123 272 zk thyristor mw 137 600g pg2010 D804C
Contextual Info: TABLE OF CONTENT THYRISTOR SURGE PROTECTION DEVICE • 50Amp 10/1000 µs Thyristor Surge Protection Device . Page 02 • 80Amp 10/1000 µs Thyristor Surge Protection Device . Page 04

tms 3755

Abstract: MACH110 MACH111SP MACH211SP MACHpro cpld manual
Contextual Info: MACH 1 & 2 FAMILIES 1 MACH 1 & 2 Families MACH 1 and 2 Families High-Performance, Low Cost EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS ◆ High-performance, low-cost, electrically-erasable CMOS PLD families ◆ 32 to 128 macrocells 1250 to 5000 PLD gates

ts 4141

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company DO-41 Hermetically Sealed Glass Axial Package Outline Package Drawing, Taping and Packaging Information Continental Device India Limited Data Sheet Page 1 of 3 Continental Device India Limited

TRANSISTOR BC 173

Abstract: transistor BC 327-25
Contextual Info: EPOXY TRANSISTORS CONTINENTAL DEVICE INDIA 3SE D • 83633^4 00QQQ1S ft ■ JL COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO hFE at bias 1C VCE ICM _Volts Volts Volts_ mA Volts mA Device_ min min min_ min/max_

BF 331 TRANSISTORS

Abstract: CIL TRANSISTOR 331 CIL TRANSISTOR TRANSISTOR TO-106 CIL 167 CIL 331 CIL331 00000CH CIL TRANSISTOR 343 transistor Bf 331
Contextual Info: METALtCAN & EPOXY TRANSISTORS • CONTINENTAL DEVICE INDIA 32E D ■ 53033=14 00000CH 5 ■ 71 PROFESSIONAL GRADE APPLICATIONS Device VCEO VCBO VEBO Volts Volts Volts min min min IC hFE at bias VCE ICM PTA ICBO VCE sat fT mA - Volts mA mW MA Volts MHz max

Contextual Info: METAL-CAN & EPOXY TRANSISTORS CON TINENTAL DEVICE INDIA 3EE D • S3fl33T4 ODOQOlb T COMMERCIAL/ENTERTAINMENT APPLICATIONS Device VCEO VCBO VEBO hFE at bias Voíts Volts Volts min min min VCE ICM PTA ICBO VCE sat mA Volts mA mW max max 1C min/max typ Cob

transistor 2n 929

Abstract: transistor BF 697
Contextual Info: METAL-CAN TRANSISTORS CONTINENTAL DEVICE INDIA • S3033TM 00Û0010 T ■ PROFESSIONAL GRADE APPLICATIONS - Device VCEO VCBO VEBO Volts Volts Volts min min min hFE at bias IC mA VCE Volts min/max ICM mA max PTA mW max PTC W typ ICBO VCE sat fT Volts MHz PA

Contextual Info: APPROVE SHEET Customer: Customer Part Number: 1N5334B~1N5378B PanJit Part Number: 1N5334B~1N5378B Approver Signature: APPROVED BY: Clock Huang PREPARED BY: Ivy Deng DATE: APR.12.2005 DATE: APR.12.2005 PANJIT INTERNATIONAL INC. TEL:886-7-6213121 FAX:886-7-6213129

Transistor NPN BC 549B

Abstract: transistor BC 147b bc 337-25 transistor transistor BC 547B Transistor - BC 547, CL 100 CIL TRANSISTOR 149b transistor transistor BC 337-25 TRANSISTOR BC 208 bc 106 transistor
Contextual Info: EPOXY TRANSISTORS •• CONTINENTA L DEVICE INDIA 3SE D • 0Q0D014 b COMMERCIAL/ENTERTAINMENT APPLICATIONS VCEO VCBO VEBO • Volts Volts Volts Device min • min min hFE at bias fr IC VCE ICM PTA ICBO VCE sat mA Volts mA mW MA Voits MHz max max typ 'typ

CIL TRANSISTOR

Abstract: cil 612 npn transistor to106 TRANSISTOR TO-106 Transistor CIL 622 CIL622 CIL 167 transistor K 3565 TO-106 Transistor CIL 611
Contextual Info: EPOXY TRANSISTORS CONTINENTAL DEVICE INDIA 35E D • 23033^4 00G00ÜÖ G ■ 'J l¡t 3/« ,/£ - PROFESSIONAL GRADE APPLICATIONS Device VCEO VCBO VEBO Volts Volts Volts min min min hFE at bias 1C VCE ICM PTA ICBO VCE sat fT mA Volts mA mW f»A Volts MHz max

Contextual Info: 1 MACH 5 FAMILY MACH 5 Family Fifth Generation MACH Architecture DISTINCTIVE CHARACTERISTICS ◆ ◆ ◆ ◆ ◆ ◆ ◆ Publication# 20446 Amendment/0 Rev: D Issue Date: August 1997 MACH 5 Family ◆ Fifth generation MACH architecture — 100% routable

tico 732

Abstract: TEA1012 CALIFORNIA MICRO DEVICES catalog O2 micro
Contextual Info: PRELIMINARY The MACH 5 Family Fifth Generation MACH Architecture V A N T I S The Programmable Logic Company From AMD DISTINCTIVE CHARACTERISTICS • Fifth generation MACH architecture — 100% routable — 5-V devices will not overdrive 3-V inputs safe for

Contextual Info: 1 MACH 5 FAMILY Back MACH 5 Family Fifth Generation MACH Architecture DISTINCTIVE CHARACTERISTICS ◆ Fifth generation MACH architecture ◆ ◆ ◆ ◆ ◆ ◆ Publication# 20446 Amendment/+1 Rev: D Issue Date: November 1997 MACH 5 Family ◆ — 100% routable