JDS uniphase EDFA
Abstract: EDFA Series optical preamplifier edfa amplifier OA-200 OAC-10U2000CA edfa module optical amplifier EDFA EDFA C Pre-Amplifier 16F21 OAC-10U-20
Text: Product Bulletin Controlled, Compact Erbium Doped Fiber Amplifier EDFA OA 2000 Amplifier Series The OA 2000 Amplifier Series offers three variants of the controlled optical amplifier, featuring 10 dB to 26 dB gain housed in a compact package: OAC-10U-20 A 10 dBm controlled EDFA designed
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OAC-10U-20
OAC-16F-21
OAC-16F-22
RS232
JDS uniphase EDFA
EDFA Series optical preamplifier
edfa amplifier
OA-200
OAC-10U2000CA
edfa module
optical amplifier EDFA
EDFA C Pre-Amplifier
16F21
OAC-10U-20
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PM8388
Abstract: 200WN
Text: 0: 14 PM S/UNI10xGE Telecom Standard Product Data Sheet Released Mo nd ay ,1 3M ar S/UNI 10xGE ch ,2 00 6 10 :1 PM3388 rtm in er In co n Ten-Port Gigabit Ethernet Controller Proprietary and Confidential Released Issue No. 7: February 2006 Do wn l oa de d by
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S/UNI10xGE
PMC-2000340,
10xGE
PM3388
PMC-2000340
PMC-2000339
34x34
PM8388
200WN
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SC17661
Abstract: capasitor 104 coa 6 pins IC LCD 16PIN capasitor 10nf MQ 6 SENSOR pin diagram sci7661 TC1-C SC1766 SCI7661MOA
Text: EPSON P F 110-10 SCI7661 C oa/ M oa DC-DC Converter • 95% Typical Power Efficiency • Doubled or Tripled Output Voltage • Internal Voltage Regulator • DESCRIPTION The SCI7661 C oa/M oaC M O S DC-DC C onverter features high operational perform ance with low pow er dissipation.
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PF110-10
SCI7661
OP5-14pin
27a3-1
SC17661
capasitor 104
coa 6 pins IC
LCD 16PIN
capasitor 10nf
MQ 6 SENSOR pin diagram
TC1-C
SC1766
SCI7661MOA
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T1003
Abstract: No abstract text available
Text: PF110-10 SCI7661 C oa/ M oa DC-DC Converter #95% Typical Power Efficiency •D oubled or Tripled Output Voltage •In tern al Voltage Regulator •DESCRIPTION T he S C I7661 C o a /M o a C M O S D C -D C Converter features high operational perform ance with low power
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PF110-10
SCI7661
I7661
748s0003)
T1003
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DBA100G
Abstract: DBA100 DBA100C
Text: Ordering num ber: EN 651D DBAIOO N0.651D Diffused Junction Silicon Diode SAVYO i 10.OA Single-Phase Bridge Rectifier F e a tu re s • Plastic molded structure • Glass passivation for high reliability •Peak reverse voltage : Vrm = 200, 600V • Average rectified c u rren t: I q = 10.0A
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DBA100
DBA100C
DBA100G
DBA100
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p-channel 250V 30A power mosfet
Abstract: mospet
Text: SFF9244 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 10 |oA Max. @ VDS = -250V ■ Lower R0S(on) : 0.549 fi(T y p .)
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-250V
SFF9244
p-channel 250V 30A power mosfet
mospet
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74V1GU04
Abstract: No abstract text available
Text: 74V1GU04 SINGLE INVERTER SINGLE STAGE . HIGH SPEED: tpD = 3.5 ns (TYP.) at Vcc = 5V . LOW POWER DISSIPATION: Icc = 1 |oA (MAX.) at T a = 25 °C . HIGH NOISE IMMUNITY: V nih = V nil = 10% V cc (MIN.) . POWERDOWN PROTECTION ON INPUT . SYMMETRICAL OUTPUT IMPEDANCE:
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74V1GU04
74V1GU04
SC-70
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54FCT640
Abstract: g8654 P54PCT640DM 54fct640adb 54FCT640DB
Text: REVISIONS LTR DATE YR-MO-OA DESCRIPTION APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET PMICN/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A 10 11 12 PREPARED BY
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5962-G8654
5962-E1178
Copyrighted5962-8865402RX
54FCT640ADB
P54PCT640ADMB
5962-8865402SX
54FCT640AEB
5962-88654022X
54FCT640ALB
P54PCT640ALMB
54FCT640
g8654
P54PCT640DM
54FCT640DB
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ERD03
Abstract: STK 200
Text: ERD03 3 .OA * ± ' j Outline Drawings GENERAL USE RECTIFIER DIODE -w f*7.5 *1.8 1 — 24MIN — 10 24 MIN— • 4 * A : Features • H igh current • f c f S f i l li High reliability ■ S tK I Marking ! Applications A 5 —3 —K : Ö Color code : White
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ERD03
STK 200
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ERD03
Abstract: diode a57
Text: ERD03 3 .OA * ± ' j Outline Drawings GENERAL USE RECTIFIER DIODE -w f*7.5 *1.8 1 — 24MIN — 10 24 MIN— • 4 * A : Features • H igh current • f c f S f i l li High reliability ■ S tK I Marking ! Applications A 5 —3 —K : Ö Color code : White
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ERD03
diode a57
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Untitled
Abstract: No abstract text available
Text: Q u a l it y Semiconductor, I nc. High-Speed CMOS 3.3V 20-Bit Register with Bus Hold QS74LCX16H721 FEATURES/BENEFITS DESCRIPTION • 5V tolerant inputs and outputs • Bus Hold feature holds last active state during 3-state operation • 10|oA lCCQ quiescent power supply current
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20-Bit
QS74LCX16H721
500mA
56-pin
LCX16H721
MDSL-00212-02
QS74LCX16H721
QS74LCX
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54HC21
Abstract: No abstract text available
Text: REVISIONS LTR APPROVED DATE YR-MO-OA DESCRIPTION REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 10 PMICN/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AM S C N/A CHECKED B i —
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-IJ9/40Â
5962-E813
5962-8857601CX
SNJ54HC21Ã
CD54HC21F/3A
5962-8857601DX
SNJ54KC21M
5962-88576012X
SNJ54HC21FK
54HC21
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mark ACBW
Abstract: acby
Text: 19-1301; Rev Oa; 10/97 . / r- p jy\JÏ1KAJV\ rr Low-Noise, Low-Dropout, ISOmA Linear Regulators with '2982Pinout _ ;_ Features The MAX8877/MAX8878 low-noise, low-dropout linear regulators operate from a 2.5V to 5.5V input and deliver up to 150mA. These devices are pin-compatible with
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165mV
150mA
2982Pinout
MAX8877/MAX8878
150mA.
SST23,
mark ACBW
acby
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IRFP244A
Abstract: No abstract text available
Text: IRFP244A Advanced Power MOSFET FEATURES B V dss = 2 5 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA M ax. @ ■ Lower R ^oa, : 0.214 £2 (Typ.)
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IRFP244A
IRFP244A
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74HC592B1R
Abstract: No abstract text available
Text: Ä 7# SCS-THOMSON M54HC592 M74HC592 8 BIT REGISTER BINARY COUNTER • HIGH SPEED î m a x = 35 MHz TYP. AT VCC = 5 V ■ LOW POWER DISSIPATION Icc = 4 |oA (MAX.) AT T a = 25 °C ■ OUTPUT DRIVE CAPABILITY 10 LSTTL LOADS ■ BALANCED PROPAGATION DELAYS tPLH = tPHL
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M54HC592
M74HC592
54/74LS592
592F1R
74HC592B1R
74HC592C1R
M54/74HC592
0GS5Q71
M54/M74HC592
74HC592B1R
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5962-8959901EX
Abstract: 54ACT251 54ACT251DMQB 54ACT251FMQB
Text: REVISIONS LTH APPROVED DATE YR-MO-OA DESCRIPTION REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET T 2 3 PMICN/A PREPARED BY STANDARDIZED MILITARY DRAWING CHECjCp BY 4 5 6 7 8 9 10 11 THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE
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5962-E1302
5962-8959901EX
54ACT251DMQB
5962-8959901FX
54ACT251FMQB
5962-89599012X
54ACT251LMQB
54ACT251
54ACT251FMQB
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54HC21
Abstract: microdot 604C
Text: REVISIONS LTR DATE YR-MO-OA DESCRIPTION APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 10 PMICN/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AM S C N/A (1 CHECKED B i —
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5962-E813
CD54HC21F/3A
5962-8857601DX
SNJ54HC21M
5962-88576012X
SNJ54HC21FK
54HC21
microdot
604C
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SG10LC20USM
Abstract: fast recovery diode low voltage FT0220G
Text: Super Fast Recovery Diode Twin Diode SG10LC20USM O U TLIN E 200V 10A Fe a tu re •i& y 'fx • trr=25ns • 711^-10 K 2kV S I I • • • • Low Noise tnr=25ns Full Molded Dielectric Strength 2kV M ain U s e • y ^ 'O n - n • =^3S, OA, 88 •ÌH 8 .F A
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SG10LC20USM
FT0220G
J533-1
CJ533-1
SG10LC20USM
fast recovery diode low voltage
FT0220G
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5962-E1354-1
Abstract: No abstract text available
Text: REVISIONS LTR DESCRIPTION DATE YH-MO-OA APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 1 2 3 4 PMICN/A PREPARED BY STANDARDIZED MILITARY DRAWING CHECKED BY 5 6 7 8 9 10 11 DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 mía*w _ THIS DRAWING IS AVAILABLE
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5962-8970901CX
CD54HCT11F/3A
5962-E1354-1
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78S40
Abstract: OP AMP 748 MA 78S40 regulator UA78S40DMQB UA78S40DM
Text: REVISIONS LTR DATE YR-MO-OA DESCRIPTION APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 1 2 3 4 6 5 7 8 9 10 11 PMIC N/A S STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENT S AND AGENCIES OF THE DEPARTMENT OF DEFENSE
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/609l
5962-E1093
5962-8876101EX
uA78S40DMQB
78S40
OP AMP 748
MA 78S40 regulator
UA78S40DM
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54fct833
Abstract: 5962-89731023
Text: REVISIONS LTR DESCRIPTION DATE YR-MO-OA APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV 3 SHEET 4 5 6 9 10 11 12 13 14 PREPARED BY PMICN/A TflQ JO tS u O L K ä M äW STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS
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-iwi09n
5962-E1430
5962-8973101KX
IDT54FCT833AEB
5962-8973101LX
IDT54FCT833ADB
5962-89731013X
IDT54FCT833ALB
5962-8973102KX
IDT54FCT833BEB
54fct833
5962-89731023
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4A2 diode
Abstract: No abstract text available
Text: S/avM*- KU7 S W - I* Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS D10SC6MR 60 V 10 A >Tjl50°C P rrs m 7 7 > 7 ,llÆ -,lb K V 'J i f f i l l >SRS;H >DC/DC m m s tf-h s oA H tg IjSfes Ttv— RATINGS Absolute Maximum Ratings a Item a E -f- Operating Junction Temperature
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D10SC6MR
Tjl50
D10SC6M
J515-5
4A2 diode
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Untitled
Abstract: No abstract text available
Text: ERD03 3 .OA * ± ' j Outline D raw ings GENERAL USE RECTIFIER DIODE -w f* 7 .5 * 1 .8 1 — 2 4 M IN — 10 2 4 M IN — • 4 * A : Features • H igh current • f c f S f i l li High reliability ■ S tK I M arking ! Applications A 5 —3 —K : Ö Color code : White
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ERD03
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Untitled
Abstract: No abstract text available
Text: MXIC M X2 9 FI 6 1 OA/ B 1 6 M-BIT 2 M X 8 / 1 M X 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:"! 00,000 cycles Fast access time: 70/90/120ns Sector erase architecture
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70/90/120ns
MX29F1610A/
44-PIN
48-PIN
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