OA 10 DIODE Search Results

SC17661

Abstract: capasitor 104 coa 6 pins IC LCD 16PIN capasitor 10nf MQ 6 SENSOR pin diagram sci7661 TC1-C SC1766 SCI7661MOA
Contextual Info: EPSON P F 110-10 SCI7661 C oa/ M oa DC-DC Converter • 95% Typical Power Efficiency • Doubled or Tripled Output Voltage • Internal Voltage Regulator • DESCRIPTION The SCI7661 C oa/M oaC M O S DC-DC C onverter features high operational perform ance with low pow er dissipation.

JDS uniphase EDFA

Abstract: EDFA Series optical preamplifier edfa amplifier OA-200 OAC-10U2000CA edfa module optical amplifier EDFA EDFA C Pre-Amplifier 16F21 OAC-10U-20
Contextual Info: Product Bulletin Controlled, Compact Erbium Doped Fiber Amplifier EDFA OA 2000 Amplifier Series The OA 2000 Amplifier Series offers three variants of the controlled optical amplifier, featuring 10 dB to 26 dB gain housed in a compact package: OAC-10U-20  A 10 dBm controlled EDFA designed

T1003

Contextual Info: PF110-10 SCI7661 C oa/ M oa DC-DC Converter #95% Typical Power Efficiency •D oubled or Tripled Output Voltage •In tern al Voltage Regulator •DESCRIPTION T he S C I7661 C o a /M o a C M O S D C -D C Converter features high operational perform ance with low power

DBA100G

Abstract: DBA100 DBA100C
Contextual Info: Ordering num ber: EN 651D DBAIOO N0.651D Diffused Junction Silicon Diode SAVYO i 10.OA Single-Phase Bridge Rectifier F e a tu re s • Plastic molded structure • Glass passivation for high reliability •Peak reverse voltage : Vrm = 200, 600V • Average rectified c u rren t: I q = 10.0A

p-channel 250V 30A power mosfet

Abstract: mospet
Contextual Info: SFF9244 Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 10 |oA Max. @ VDS = -250V ■ Lower R0S(on) : 0.549 fi(T y p .)

74V1GU04

Contextual Info: 74V1GU04 SINGLE INVERTER SINGLE STAGE . HIGH SPEED: tpD = 3.5 ns (TYP.) at Vcc = 5V . LOW POWER DISSIPATION: Icc = 1 |oA (MAX.) at T a = 25 °C . HIGH NOISE IMMUNITY: V nih = V nil = 10% V cc (MIN.) . POWERDOWN PROTECTION ON INPUT . SYMMETRICAL OUTPUT IMPEDANCE:

54FCT640

Abstract: g8654 P54PCT640DM 54fct640adb 54FCT640DB
Contextual Info: REVISIONS LTR DATE YR-MO-OA DESCRIPTION APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET PMICN/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AMSC N/A 10 11 12 PREPARED BY

ERD03

Abstract: STK 200
Contextual Info: ERD03 3 .OA * ± ' j Outline Drawings GENERAL USE RECTIFIER DIODE -w f*7.5 *1.8 1 — 24MIN — 10 24 MIN— • 4 * A : Features • H igh current • f c f S f i l li High reliability ■ S tK I Marking ! Applications A 5 —3 —K : Ö Color code : White

ERD03

Abstract: diode a57
Contextual Info: ERD03 3 .OA * ± ' j Outline Drawings GENERAL USE RECTIFIER DIODE -w f*7.5 *1.8 1 — 24MIN — 10 24 MIN— • 4 * A : Features • H igh current • f c f S f i l li High reliability ■ S tK I Marking ! Applications A 5 —3 —K : Ö Color code : White

Contextual Info: Q u a l it y Semiconductor, I nc. High-Speed CMOS 3.3V 20-Bit Register with Bus Hold QS74LCX16H721 FEATURES/BENEFITS DESCRIPTION • 5V tolerant inputs and outputs • Bus Hold feature holds last active state during 3-state operation • 10|oA lCCQ quiescent power supply current

54HC21

Contextual Info: REVISIONS LTR APPROVED DATE YR-MO-OA DESCRIPTION REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 10 PMICN/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AM S C N/A CHECKED B i —

mark ACBW

Abstract: acby
Contextual Info: 19-1301; Rev Oa; 10/97 . / r- p jy\JÏ1KAJV\ rr Low-Noise, Low-Dropout, ISOmA Linear Regulators with '2982Pinout _ ;_ Features The MAX8877/MAX8878 low-noise, low-dropout linear regulators operate from a 2.5V to 5.5V input and deliver up to 150mA. These devices are pin-compatible with

IRFP244A

Contextual Info: IRFP244A Advanced Power MOSFET FEATURES B V dss = 2 5 0 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 nA M ax. @ ■ Lower R ^oa, : 0.214 £2 (Typ.)

74VHCU04

Contextual Info: 74VHCU04 HEX INVERTER SINGLE STAGE PRELIMINARY DATA . HIGH SPEED: tPD = 3.5 ns (TYP.) at V c c = 5V • LOW POWER DISSIPATION: Icc = 2 |oA (MAX.) at Ta = 25 °C ■ HIGH NOISE IMMUNITY: V nih = V nil = 10% V c c (MIN.) . POWERDOWN PROTECTION ON INPUTS ■ SYMMETRICAL OUTPUT IMPEDANCE:

5962-8959901EX

Abstract: 54ACT251 54ACT251DMQB 54ACT251FMQB
Contextual Info: REVISIONS LTH APPROVED DATE YR-MO-OA DESCRIPTION REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET T 2 3 PMICN/A PREPARED BY STANDARDIZED MILITARY DRAWING CHECjCp BY 4 5 6 7 8 9 10 11 THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE

54HC21

Abstract: microdot 604C
Contextual Info: REVISIONS LTR DATE YR-MO-OA DESCRIPTION APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 10 PMICN/A STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS AND AGENCIES OF THE DEPARTMENT OF DEFENSE AM S C N/A (1 CHECKED B i —

SG10LC20USM

Abstract: fast recovery diode low voltage FT0220G
Contextual Info: Super Fast Recovery Diode Twin Diode SG10LC20USM O U TLIN E 200V 10A Fe a tu re •i& y 'fx • trr=25ns • 711^-10 K 2kV S I I • • • • Low Noise tnr=25ns Full Molded Dielectric Strength 2kV M ain U s e • y ^ 'O n - n • =^3S, OA, 88 •ÌH 8 .F A

5962-E1354-1

Contextual Info: REVISIONS LTR DESCRIPTION DATE YH-MO-OA APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 1 2 3 4 PMICN/A PREPARED BY STANDARDIZED MILITARY DRAWING CHECKED BY 5 6 7 8 9 10 11 DEFENSE ELECTRONICS SUPPLY CENTER DAYTON, OHIO 45444 mía*w _ THIS DRAWING IS AVAILABLE

78S40

Abstract: OP AMP 748 MA 78S40 regulator UA78S40DMQB UA78S40DM
Contextual Info: REVISIONS LTR DATE YR-MO-OA DESCRIPTION APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET 1 2 3 4 6 5 7 8 9 10 11 PMIC N/A S STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENT S AND AGENCIES OF THE DEPARTMENT OF DEFENSE

54fct833

Abstract: 5962-89731023
Contextual Info: REVISIONS LTR DESCRIPTION DATE YR-MO-OA APPROVED REV SHEET REV SHEET REV STATUS OF SHEETS REV 3 SHEET 4 5 6 9 10 11 12 13 14 PREPARED BY PMICN/A TflQ JO tS u O L K ä M äW STANDARDIZED MILITARY DRAWING THIS DRAWING IS AVAILABLE FOR USE BY ALL DEPARTMENTS

PM8388

Abstract: 200WN
Contextual Info: 0: 14 PM S/UNI10xGE Telecom Standard Product Data Sheet Released Mo nd ay ,1 3M ar S/UNI 10xGE ch ,2 00 6 10 :1 PM3388 rtm in er In co n Ten-Port Gigabit Ethernet Controller Proprietary and Confidential Released Issue No. 7: February 2006 Do wn l oa de d by

4A2 diode

Contextual Info: S/avM*- KU7 S W - I* Schottky Barrier Diode Twin Diode OUTLINE DIMENSIONS D10SC6MR 60 V 10 A >Tjl50°C P rrs m 7 7 > 7 ,llÆ -,lb K V 'J i f f i l l >SRS;H >DC/DC m m s tf-h s oA H tg IjSfes Ttv— RATINGS Absolute Maximum Ratings a Item a E -f- Operating Junction Temperature

Contextual Info: ERD03 3 .OA * ± ' j Outline D raw ings GENERAL USE RECTIFIER DIODE -w f* 7 .5 * 1 .8 1 — 2 4 M IN — 10 2 4 M IN — • 4 * A : Features • H igh current • f c f S f i l li High reliability ■ S tK I M arking ! Applications A 5 —3 —K : Ö Color code : White

Contextual Info: MXIC M X2 9 FI 6 1 OA/ B 1 6 M-BIT 2 M X 8 / 1 M X 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:"! 00,000 cycles Fast access time: 70/90/120ns Sector erase architecture