jdsu oa 400
Abstract: jdsu laser diode 980 nm diode.18 OA 70 diode JDSU oaa OA400 E2000 JDSU pump jdsu OA 400 series optical amplifier module jdsu oa 400 series optical amplifier
Text: COMMUNICATIONS MODULES & SUBSYSTEMS Compact, Low Cost Single-Channel or Narrow Band Amplifiers OA 400 Amplifier Series Key Features • Compact, MSA compatible package size, 70 x 90 x 12 mm • Small signal gain, ~24 dB • Saturated output power, ~15 dBm
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OA400
498-JDSU
5378-JDSU
jdsu oa 400
jdsu laser diode 980 nm
diode.18
OA 70 diode
JDSU oaa
E2000
JDSU pump
jdsu OA 400 series optical amplifier module
jdsu oa 400 series optical amplifier
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN2817B DBF20 Diffused Junction Silicon Diode DBF20 2.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=200, 600V. Average rectified current : IO=2.0A.
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ENN2817B
DBF20
DBF20]
DBF20C
DBF20G
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DBF20
Abstract: DBF20C DBF20G
Text: Ordering number : ENN2817B DBF20 Diffused Junction Silicon Diode DBF20 2.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=200, 600V. Average rectified current : IO=2.0A.
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ENN2817B
DBF20
DBF20]
DBF20
DBF20C
DBF20G
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENN2817B DBF20 Diffused Junction Silicon Diode DBF20 2.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=200, 600V. Average rectified current : IO=2.0A.
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ENN2817B
DBF20
DBF20]
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bridge RECTIFIER GI
Abstract: DBF20 DBF20C DBF20G
Text: Ordering number : ENN2817B DBF20 Diffused Junction Silicon Diode DBF20 2.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=200, 600V. Average rectified current : IO=2.0A.
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ENN2817B
DBF20
DBF20]
bridge RECTIFIER GI
DBF20
DBF20C
DBF20G
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sod323 reflow
Abstract: SOD523 footprint SOT323 reflow 1PS76SB70 1PS79SB70 BAS70 BAS70-04 BAS70-04W BAS70-05 BAS70-05W
Text: BAS70 series; 1PS7xSB70 series General-purpose Schottky diodes Rev. 07 — 18 July 2005 Product data sheet 1. Product profile 1.1 General description General-purpose Schottky diodes in small Surface Mounted Device SMD plastic packages. Table 1: Product overview
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BAS70
1PS7xSB70
1PS76SB70
OD323
SC-76
1PS79SB70
OD523
SC-79
BAS70
BAS70H
sod323 reflow
SOD523 footprint
SOT323 reflow
1PS76SB70
1PS79SB70
BAS70-04
BAS70-04W
BAS70-05
BAS70-05W
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infrared diode
Abstract: GL1F20 IS1U20 serial vs parallel communication
Text: GL1F20 GL1F20 Infrared Communication IrDA1.0 Compatible InfraredEmitting Diode • Features ■ Outline Dimensions 1. IrDA1.0 compatible infrared emitting diode (Transmission rate : 2.4 to 115.2kbps) (Unit : mm) 2.2 2. Built-in infrared emitting diode circuit
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GL1F20
IS1U20)
GL1F20)
infrared diode
GL1F20
IS1U20
serial vs parallel communication
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Untitled
Abstract: No abstract text available
Text: 赤外発光ダイオード GaAlAs INFRARED EMITTING DIODES(GaAlAs) ML-1CL3 ML-1CL3は３φセラミックステムを使用した高出力GaAlAs赤外発 •外形寸法 DIMENSIONS（Unit : mm） 光ダイオードです。 MAX φ3.2 ceramic package.
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865nm
53deg.
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OK Industries
Abstract: No abstract text available
Text: NEW PRODUCT INFORMATION GL1F20 APPLICATIONS: • Personal Computer • Personal Digital Assistant • Printer • Word Processor IR Data Communication Emitter IR EMITTING DIODE FOR IR DATA COMMUNICATION CONFORM TO IRDA 1.0 OUTLINE DIMENSIONS (Unit:mm) 5.6
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GL1F20
GL1F20
GL1F20/IS1U20
GL1F20)
IS1U20)
rate55-0942
OK Industries
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Kodenshi Corp
Abstract: No abstract text available
Text: ML-1CL3 赤外発光ダイオード INFRARED EMITTING DIODES GaAlAs ML-1CL3は3φセラミックステムを使用した高出力GaAlAs赤外発行ダイオードです。 The ML-1CL3 is a high-power GaAlAs IRED mounted in a 3φ ceramic packagge. 最大定格 MAXIMUM RATINGS
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ML-1CL33GaAlAs
865nm
Kodenshi Corp
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2831A
Abstract: 1S2827A 1S2828A 1S2830A SM15 1S282
Text: -m •íjfE • ffliÉ • 200V -1000V SM-1.5 ORIGIN ELECTRIC CO LTD 1. SflE T> . r • 1.5A □013074 O O G Ü O E b 70Ü « 0 R I J W Ë • t 0 I . OA • • APPLICATIONS 1. OA, FA equipments. TféíiType m it Symbols Unit ¡» s» « $ fil} >f » 3 $
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00V-1000V
000002b
1S2827A
1S2828A
1S2830A
-25MIN-
UL94V-0
2831A
SM15
1S282
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Untitled
Abstract: No abstract text available
Text: urm TECHNOLOGY LT2078/LT2079 Micropower, Dual and Quad, Single Supply, Precision Op Amps F6ATUACS DCSCRIPTIOH • SO Package with Standard Pinout ■ Supply Current per Amplifier: 50|oA Max ■ Offset Voltage: 70|xV Max The LT 2078 is a micropower dual op amp in 8-pin small
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LT2078/LT2079
LT2079
14-pin
250pA
200kHz
LT1211/LT1212
14MHz,
LT1490/LT1491
50jiA
200kHz
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Untitled
Abstract: No abstract text available
Text: MXIC M X2 9 FI 6 1 OA/ B 1 6 M-BIT 2 M X 8 / 1 M X 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:"! 00,000 cycles Fast access time: 70/90/120ns Sector erase architecture
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70/90/120ns
MX29F1610A/
44-PIN
48-PIN
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Untitled
Abstract: No abstract text available
Text: QSFCT2X3245 PRELIMINARY Q 3.3 Volt CMOS 16-Bit Tranceiver QS74FCT2X3245 FEATURES/BENEFITS • • • • • Pin and function compatible to the QSFCT2X245 Available in 40-pin QVSOP Undershoot clamp diodes on all inputs Ground bounce controlled outputs Low power QCMOS: 0.07 |aW typ static
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QSFCT2X3245
16-Bit
QS74FCT2X3245
QSFCT2X245
40-pin
FCT2X3245
2X3245
2X3245A
MDSL-00062-00
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a106 diode
Abstract: diode A106 ESAC25D A-106 ESAC25 ESAC25-ODC
Text: ESAC25 C, INI, D (ioa) FAST RECOVERY DIODE Features High voltage by mesa design. • AflMKtt High reliability m w m & m Connection Diagram : Applications ESAC25-ODC °— N — ° ESAC25-DDN © o — H ^ - ► l— ° ® ►! î@> | — °(D High speed power switching.
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ESAC25
T0-220AB
SC-46
ESAC25-ODC
ESAC25-DDN
ESAC25-DDD
a106 diode
diode A106
ESAC25D
A-106
ESAC25-ODC
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a106 diode
Abstract: diode A106 ESAC25 X-1-80 A-106 A106
Text: ESAC25 C, INI, D (ioa) FAST RECOVERY DIODE Features High voltage by mesa design. • AflMKtt High reliability m w m & m Connection Diagram : Applications ESAC25-ODC °— N — ° ESAC25-DDN © o — H ^ - ► l— ° ® ►! î@> | — °(D High speed power switching.
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ESAC25
T0-220AB
SC-46
ESAC25-ODC
ESAC25-DDN
ESAC25-DDD
a106 diode
diode A106
X-1-80
A-106
A106
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Untitled
Abstract: No abstract text available
Text: QuickSwitch Products Q u a l it y Semiconductor, I nc. q s 34x s t 257 High-Speed CMOS SynChroSwitCh 32:16 MUX/DemUX With Active Terminators in f o ardmva ™ n FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • Bidirectional signal flow
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SynChroSwitChTM32
80-pin
MDSL-00214-00
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keramische Werke Hermsdorf
Abstract: Mischstufen VEB Keramische Werke OA741 OA645 OA625 hermsdorf OA665 neue halbleiterbauelemente Amateur
Text: HalbleiterBauelemente Dioden Germanium dioden Type Durchlaß spannung U a k IVI Durchlaß strom Sperr spannung lA K l m A l U k a |V| Sperrstrom IKA li'AI max. zuläss. Sperr spannung jEä max. zuass. Durchlaß strom UKAma* IVI ^AKmax !mAl Bau
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1k27a
Abstract: K4242 k424 1K41 1h44 1K413 1H445
Text: devices TOLL FREE NUMBER 800-777-3960 T - o i ' ù t silicon diodes c o n t’d M u dw n f u k C um it p » CMrfèfrt T iff • UK56 8 a 150 IX « » 1.0 1 M * IM m t » w K4M H\62A »M 2M 1.0 1.0 i.o 5 2 5 2 40 0) is 5 l:o 200 HO N 4U *M H « 100 1:3 100
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J50W-Â
1k27a
K4242
k424
1K41
1h44
1K413
1H445
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RB040-40T
Abstract: Schaffner load dump generator rb040 RB04
Text: SCS-THOMSON iije r a « ® Application Specific Discretes A.S.D. R B 0 4 0 -40T REVERSED-BATTERY AND OVERVOLTAGE PROTECTION FEATURES . PROTECTION AGAINST”LOAD DUMP” EFFECT • DIODE TO GUARD AGAINST BATTERY REVERSAL . MONOLITHIC STRUCTURE FOR GREATER
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Untitled
Abstract: No abstract text available
Text: E2V0013-37-X1 O K I electronic components QL3200 N_ 1.3 jim Laser-Diode DIP Module GENERAL DESCRIPTION The OL3200N is a 1.3 Am, InGaAsP/InP laser diode DIP module with a single-mode fiber pigtail. This module is an optimal light source for high-capacity long-haul optical transmission
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E2V0013-37-X1
QL3200
OL3200N
14-pin
OL3200N
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Untitled
Abstract: No abstract text available
Text: UG1A THRU UG1D MINIATURE ULTRAFAST PLASTIC RECTIFIER Voltage - 50 to 200 Volts C u rre n t - 1.0 Amperes FEATURES Ideally suited for use in very high frequency switch ing power supplies, inverters and as free wheeling diodes Plastic package has Underwriters Laboratories
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D0-204AL,
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RC266
Abstract: RS -12V SDS RELAY RSL -12V SDS RELAY MD127 RS -24V SDS RELAY txal HB 541 RELAY PCB DPDT 4c sds relays TXAL 386 B
Text: RC288ACÌ and RC288ACL * Rockwell RC288ACi and RC288ACL Integrated V.34 Data/V.17 Fax/Voice Modem Device Set Family INTRODUCTION FEATURES The Rockwell RC288ACi and R C288A CL integrated modem device set families support ultra high speed data and high speed fax operation in the US or world-wide over
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RC288ACÃ
RC288ACL
RC288ACL
42/MNP
Adaptive08TYP
GP00-D264-11/29/93
-128-Pin
RC266
RS -12V SDS RELAY
RSL -12V SDS RELAY
MD127
RS -24V SDS RELAY
txal
HB 541
RELAY PCB DPDT 4c
sds relays
TXAL 386 B
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Untitled
Abstract: No abstract text available
Text: RC144ATÌ and RC144ATL * Rockwell RC144ATÌ and RC144ATL Integrated High Speed Data/Fax/Voice Modem Device Set INTRODUCTION FEATURES The Rockwell RC144ATi and RC144ATL device sets are low cost, integrated 14400 bps data and fax modems with options that support voice and world-wide operation.
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RC144ATÃ
RC144ATL
RC144ATi
RC144ATL
RC144ATi/ATL)
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