OA 70 DIODE Search Results

2831A

Abstract: 1S2827A 1S2828A 1S2830A SM15 1S282
Contextual Info: -m •íjfE • ffliÉ • 200V -1000V SM-1.5 ORIGIN ELECTRIC CO LTD 1. SflE T> . r • 1.5A □013074 O O G Ü O E b 70Ü « 0 R I J W Ë • t 0 I . OA • • APPLICATIONS 1. OA, FA equipments. TféíiType m it Symbols Unit ¡» s» « $ fil} >f » 3 $

jdsu oa 400

Abstract: jdsu laser diode 980 nm diode.18 OA 70 diode JDSU oaa OA400 E2000 JDSU pump jdsu OA 400 series optical amplifier module jdsu oa 400 series optical amplifier
Contextual Info: COMMUNICATIONS MODULES & SUBSYSTEMS Compact, Low Cost Single-Channel or Narrow Band Amplifiers OA 400 Amplifier Series Key Features • Compact, MSA compatible package size, 70 x 90 x 12 mm • Small signal gain, ~24 dB • Saturated output power, ~15 dBm

Contextual Info: urm TECHNOLOGY LT2078/LT2079 Micropower, Dual and Quad, Single Supply, Precision Op Amps F6ATUACS DCSCRIPTIOH • SO Package with Standard Pinout ■ Supply Current per Amplifier: 50|oA Max ■ Offset Voltage: 70|xV Max The LT 2078 is a micropower dual op amp in 8-pin small

Contextual Info: MXIC M X2 9 FI 6 1 OA/ B 1 6 M-BIT 2 M X 8 / 1 M X 1 6 CMOS SINGLE VOLTAGE FLASH EEPROM FEATURES • • • • • • • • • 5V ± 10% write and erase JEDEC-standard EEPROM commands Endurance:"! 00,000 cycles Fast access time: 70/90/120ns Sector erase architecture

Contextual Info: Ordering number : ENN2817B DBF20 Diffused Junction Silicon Diode DBF20 2.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=200, 600V. Average rectified current : IO=2.0A.

DBF20

Abstract: DBF20C DBF20G
Contextual Info: Ordering number : ENN2817B DBF20 Diffused Junction Silicon Diode DBF20 2.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=200, 600V. Average rectified current : IO=2.0A.

Contextual Info: Ordering number : ENN2817B DBF20 Diffused Junction Silicon Diode DBF20 2.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=200, 600V. Average rectified current : IO=2.0A.

bridge RECTIFIER GI

Abstract: DBF20 DBF20C DBF20G
Contextual Info: Ordering number : ENN2817B DBF20 Diffused Junction Silicon Diode DBF20 2.0A Single-Phase Bridge Rectifier Features • • • • Package Dimensions Glass passivation for high reliability. Plastic molded structure. Peak reverse voltage : VRM=200, 600V. Average rectified current : IO=2.0A.

Contextual Info: QSFCT2X3245 PRELIMINARY Q 3.3 Volt CMOS 16-Bit Tranceiver QS74FCT2X3245 FEATURES/BENEFITS • • • • • Pin and function compatible to the QSFCT2X245 Available in 40-pin QVSOP Undershoot clamp diodes on all inputs Ground bounce controlled outputs Low power QCMOS: 0.07 |aW typ static

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

sod323 reflow

Abstract: SOD523 footprint SOT323 reflow 1PS76SB70 1PS79SB70 BAS70 BAS70-04 BAS70-04W BAS70-05 BAS70-05W
Contextual Info: BAS70 series; 1PS7xSB70 series General-purpose Schottky diodes Rev. 07 — 18 July 2005 Product data sheet 1. Product profile 1.1 General description General-purpose Schottky diodes in small Surface Mounted Device SMD plastic packages. Table 1: Product overview

a106 diode

Abstract: diode A106 ESAC25D A-106 ESAC25 ESAC25-ODC
Contextual Info: ESAC25 C, INI, D (ioa) FAST RECOVERY DIODE Features High voltage by mesa design. • AflMKtt High reliability m w m & m Connection Diagram : Applications ESAC25-ODC °— N — ° ESAC25-DDN © o — H ^ - ► l— ° ® ►! î@> | — °(D High speed power switching.

infrared diode

Abstract: GL1F20 IS1U20 serial vs parallel communication
Contextual Info: GL1F20 GL1F20 Infrared Communication IrDA1.0 Compatible InfraredEmitting Diode • Features ■ Outline Dimensions 1. IrDA1.0 compatible infrared emitting diode (Transmission rate : 2.4 to 115.2kbps) (Unit : mm) 2.2 2. Built-in infrared emitting diode circuit

a106 diode

Abstract: diode A106 ESAC25 X-1-80 A-106 A106
Contextual Info: ESAC25 C, INI, D (ioa) FAST RECOVERY DIODE Features High voltage by mesa design. • AflMKtt High reliability m w m & m Connection Diagram : Applications ESAC25-ODC °— N — ° ESAC25-DDN © o — H ^ - ► l— ° ® ►! î@> | — °(D High speed power switching.

Contextual Info: QuickSwitch Products Q u a l it y Semiconductor, I nc. q s 34x s t 257 High-Speed CMOS SynChroSwitCh 32:16 MUX/DemUX With Active Terminators in f o ardmva ™ n FEATURES/BENEFITS DESCRIPTION • Enhanced N channel FET with no inherent diode to Vcc • Bidirectional signal flow

keramische Werke Hermsdorf

Abstract: Mischstufen VEB Keramische Werke OA741 OA645 OA625 hermsdorf OA665 neue halbleiterbauelemente Amateur
Contextual Info: HalbleiterBauelemente Dioden Germanium dioden Type Durchlaß­ spannung U a k IVI Durchlaß­ strom Sperr­ spannung lA K l m A l U k a |V| Sperrstrom IKA li'AI max. zuläss. Sperr­ spannung jEä max. zuass. Durchlaß­ strom UKAma* IVI ^AKmax !mAl Bau­

OK Industries

Contextual Info: NEW PRODUCT INFORMATION GL1F20 APPLICATIONS: • Personal Computer • Personal Digital Assistant • Printer • Word Processor IR Data Communication Emitter IR EMITTING DIODE FOR IR DATA COMMUNICATION CONFORM TO IRDA 1.0 OUTLINE DIMENSIONS (Unit:mm) 5.6

1k27a

Abstract: K4242 k424 1K41 1h44 1K413 1H445
Contextual Info: devices TOLL FREE NUMBER 800-777-3960 T - o i ' ù t silicon diodes c o n t’d M u dw n f u k C um it p » CMrfèfrt T iff • UK56 8 a 150 IX « » 1.0 1 M * IM m t » w K4M H\62A »M 2M 1.0 1.0 i.o 5 2 5 2 40 0) is 5 l:o 200 HO N 4U *M H « 100 1:3 100

RB040-40T

Abstract: Schaffner load dump generator rb040 RB04
Contextual Info: SCS-THOMSON iije r a « ® Application Specific Discretes A.S.D. R B 0 4 0 -40T REVERSED-BATTERY AND OVERVOLTAGE PROTECTION FEATURES . PROTECTION AGAINST”LOAD DUMP” EFFECT • DIODE TO GUARD AGAINST BATTERY REVERSAL . MONOLITHIC STRUCTURE FOR GREATER

Contextual Info: E2V0013-37-X1 O K I electronic components QL3200 N_ 1.3 jim Laser-Diode DIP Module GENERAL DESCRIPTION The OL3200N is a 1.3 Am, InGaAsP/InP laser diode DIP module with a single-mode fiber pigtail. This module is an optimal light source for high-capacity long-haul optical transmission

Kodenshi Corp

Contextual Info: ML-1CL3 赤外発光ダイオード INFRARED EMITTING DIODES GaAlAs ML-1CL3は3φセラミックステムを使用した高出力GaAlAs赤外発行ダイオードです。 The ML-1CL3 is a high-power GaAlAs IRED mounted in a 3φ ceramic packagge. 最大定格 MAXIMUM RATINGS

Contextual Info: UG1A THRU UG1D MINIATURE ULTRAFAST PLASTIC RECTIFIER Voltage - 50 to 200 Volts C u rre n t - 1.0 Amperes FEATURES Ideally suited for use in very high frequency switch­ ing power supplies, inverters and as free wheeling diodes Plastic package has Underwriters Laboratories

RC266

Abstract: RS -12V SDS RELAY RSL -12V SDS RELAY MD127 RS -24V SDS RELAY txal HB 541 RELAY PCB DPDT 4c sds relays TXAL 386 B
Contextual Info: RC288ACÌ and RC288ACL * Rockwell RC288ACi and RC288ACL Integrated V.34 Data/V.17 Fax/Voice Modem Device Set Family INTRODUCTION FEATURES The Rockwell RC288ACi and R C288A CL integrated modem device set families support ultra high speed data and high speed fax operation in the US or world-wide over

Contextual Info: RC144ATÌ and RC144ATL * Rockwell RC144ATÌ and RC144ATL Integrated High Speed Data/Fax/Voice Modem Device Set INTRODUCTION FEATURES The Rockwell RC144ATi and RC144ATL device sets are low cost, integrated 14400 bps data and fax modems with options that support voice and world-wide operation.