OAAI Search Results

ZNA234E

Abstract: zna234 GEC PLESSEY st 393 GEC Plessey m
Contextual Info: u i» i » j v j •»»1^*03 . JJ* 139 A 3 S S 3 - led 0 3 0 -£ 6 € - jMiSNi IS B l jiv e 's *380 oaaiA 03 ÏIW »»<> 03 *iw a o s i + ~ S 9 - : ¿gfEjík#; • OM I — O : • AL : T H S j S í S « d ia - d 9 I : 3flr^« ar z ' ; ^ } ^ mcfY^ - ^ a9

Contextual Info: asc » m n?as7fl oaai7bb 3 «izetb ' . - ZETEX SEMICONDUCTORS NPN HIGH CURRENT SWITCHING T ABLE11 N P N S IL IC O N P L A N A R H IG H C U R R E N T S W I T C H IN G T R A N S I S T O R S The transistors shown in this table are designed for high current, high dissipation switching

ISS302

Abstract: bta 700
Contextual Info: 30E D £ ÿ j • 7 ^ 3 3 7 oaaisfiü a ■ _ ^ \ ^ Z 5 ~ \ 1 _ S G S - T " H O M S O N B T A 41 A IL H O T O * S S G S-THOMSON TRIACS ■ GLASS PASSIVATED CHIP s p e c i f i e d in f o u r q u a d r a n t s ■ INSULATING VOLTAGE 2500 V r m s ■ UL RECOGNIZED E81734

T106, scr

Abstract: T106F1 SCR S0508LS3 SCR EC1038 T10701 S0508LS3 TO-220 S4003LS3 EC1030 EC10383 S2003LS1
Contextual Info: TECCOR ELECTRONICS INC oaaiais EHE D h “ T - z s - 1 3 TECCOR ELECTRONICS, INC, 1801 HURD DRIVE IRVING, TEXAS 75038 PHONE 214/580-1515 FAX 214/550-1309 SCR’s 0.8-10 AMPS SENSITIVE GATE General Description G la ss Passivation The Teccor Electronics, inc. line of sensitive S C R

GAA160

Contextual Info: DUAL POLE OptoMOS RELAYS OAAI6O DESCRIPTION The O A A I 6O is a 250V, 50mA, 100Î2 type 2-Form-A solid state relay. FEATURES APPLICATIONS • Small 8 Pin DIP Package ■ Low Drive Power Requirements TTL/CMOS Compatible ■ No Moving Parts ■ High Reliability

Contextual Info: OPA OPA2 356 OPA OPA356 OPA2356 2356 356 SBOS212A – NOVEMBER, 2001 200MHz, CMOS OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● UNITY-GAIN BANDWIDTH: 450MHz The OPAx356 series high-speed, voltage-feedback CMOS operational amplifiers are designed for video and other

smd t2a 01

Abstract: Q67060-S6502-A2 Siemens EC 85 4T SMD CODE smd t2a Q67060-S6502-A3 6235t IDA45
Contextual Info: ÛSBSbDS 00Ô1300 3 ^ SIEM EN S HITFET BTS 141 Smart Lowside Power Switch Features Product Summary * Logic Level Input * Input protection ESD * Thermal shutdown » Overload protection * Short circuit protection * Overvoltage protection * Current limitation

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET JS 8834-A S Power GaAs FETs Chip Form Features • Medium power - P1dB = 21 dBm at f = 8 GHz • High gain - GidB = at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)

Contextual Info: HE D I 4055452 G O G ^ a a | Data Sheet No. PD-9.513B INTERNATIONAL RECTIFIER _ INTERNATIONAL RECTIFIER I R T -39-23 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFAC30 IRFAC32

mcm6830

Abstract: EXORCISER motorola M68MM01A 7642T MC68B54 transistor bf 175 motorola application note 6809 6844 MMS1117 EXORCISER motorola M68MM01A2
Contextual Info: The MS800MM0S Support Elem ents Other NMOS MPUs MC3870 ^ MICROCOMPUTER COMPONENTS CMOS MCUS/ICUS MC14S00B, MC141000/1206 Bipolar 4-Blt slice MPU Fam ilies M2900 TTL , M10800 (MECL) nm os Memories RAM, EPROM, ROM CMOS Memories RAM, ROM MEMORY PRODUCTS Bipoiar Memories

L200k

Contextual Info: C D4013A Types Dual 'D’-Type Flip-Flop T h e R C A -C D 4 0 1 3 A consists o f tw o id e n tic a l, in d e p e n d e n t d a ta -ty p e flip -flo p s . Each f lip f lo p has in d e p e n d e n t data, set, reset, and c lo c k in p u ts , and Q and Q o u tp u ts . These

TRANSISTOR BFR97

Abstract: BFR97 2N3866 2N3866 SCHEMATIC 2N3866-BFR97 2N3866 metal Planar choke Transistor 2N3866 data 2n3866
Contextual Info: 30E D • 7^53537 0031187 b ■ \ ‘3 > 0 5 SGS-THOMSON IMOœiLlICTliMOûS 2N3866 BFR97 S G S-TH0MS0N VHF-UHF POWER AMPLIFIER DESCRIPTION The 2N3866 and BFR97 are silicon planar epitaxial NPN transistor in Jedec TO-39 metal case. They are designed for VHF-UHF class A, B, or C amplifier cir­

OPA2356

Abstract: OPA2356AIDGKR OPA2356AIDGKT OPA356 OPA356AID OPA356AIDBVR OPA356AIDBVT OPA356AIDR
Contextual Info: OPA OPA2 356 OPA OPA356 OPA2356 2356 356 SBOS212A – NOVEMBER, 2001 200MHz, CMOS OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● UNITY-GAIN BANDWIDTH: 450MHz The OPAx356 series high-speed, voltage-feedback CMOS operational amplifiers are designed for video and other

7u23

Contextual Info: CMOS SRAM KM62256CLI-LV 32Kx8Bit Extended Voltage & Industrial Temp. Range Operating SRAM FEATURES GENERAL DESCRIPTION • Industrial Temperature Range : -40°C to 85°C • Extended Operating Voltage : 3.0-5.5V • Fast Access Time - 3.3V Operation : 100ns Max.

OPA2356

Abstract: OPA2356AIDGKR OPA2356AIDGKT OPA356 OPA356AID OPA356AIDBVR OPA356AIDBVT OPA356AIDR
Contextual Info: OPA OPA2 356 OPA OPA356 OPA2356 2356 356 SBOS212A – NOVEMBER, 2001 200MHz, CMOS OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● UNITY-GAIN BANDWIDTH: 450MHz The OPAx356 series high-speed, voltage-feedback CMOS operational amplifiers are designed for video and other

Contextual Info: OPA OPA2 356 OPA OPA356 OPA2356 2356 356 SBOS212A – NOVEMBER, 2001 200MHz, CMOS OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● UNITY-GAIN BANDWIDTH: 450MHz The OPAx356 series high-speed, voltage-feedback CMOS operational amplifiers are designed for video and other

CD4013A

Abstract: RCA-CD4013A d flipflop
Contextual Info: C D 4013A Types Dual 'D’-Type Flip-Flop T he R C A -C D 4 0 1 3 A consists o f t w o id e n tic a l, in d e p e n d e n t d a ta -typ e flip -flo p s . Each f l i p ­ f lo p has in d e p e n d e n t data, set, reset, and c lo c k in p u ts , and Q and Q o u tp u ts . These

TC5047AP-1

Abstract: 47ap toshiba 2011 TC5047AP-2 TC5047AP TC5047
Contextual Info: [ TOSHIBA MOS MEMORY PRODUCTS TC5047AP- I TC5047AP-2 1024 WORD X 4B IT CMOS RAM S IL IC O N G A T E C M O S DESCRIPTION The TC 5047AP o rg a n iz e d as is a s ta tic 1024 w o rd s read by 4 w r ite b its The m e m o ry using th re e s ta te o u t p u ts s im p lif y

OPA356

Abstract: 75mH
Contextual Info: OPA OPA2 356 OPA OPA356 OPA2356 2356 356 SBOS212A – NOVEMBER, 2001 200MHz, CMOS OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● UNITY-GAIN BANDWIDTH: 450MHz The OPAx356 series high-speed, voltage-feedback CMOS operational amplifiers are designed for video and other

2SB688

Abstract: 2SD718 2SB68 2sb688-o
Contextual Info: 8SE 10E096 091-08 '•O ‘0II- 9S : H àd — 08Z — ZH H T =J ‘0 = ^1 ‘A 0 T - = a O A ZH H — 01 — v i - = 0 i ‘A s - = a o A A S 'I - — — V 9 - = 0 l ‘AS - = 3 3 a A Q 'Z - — — 091 — 99 A — — y// o i- — Ê/ < e <- ij < é

VEB mikroelektronik

Abstract: Datenblattsammlung SY 625 V40511D mikroelektronik datenblattsammlung Diode KD 514 KD512A mikroelektronik Berlin "halbleiterwerk frankfurt" VEB Kombinat mikroelektronik Erfurt
Contextual Info: \ñ ñ lB rW *m X S á B Í4 ti& * 311' ill c e l e k t r o n i k - b a u e i e m e n t e ? 2/86 . Die vorliegenden Datenblätter beinhalten Listen i Infonmatic-aen ü b e r elektronischer Sie können abgeleitet beinhalten n ur z u r Information» Halbleiterbauelemente

Contextual Info: OPA OPA2 356 OPA OPA356 OPA2356 2356 356 SBOS212A – NOVEMBER, 2001 200MHz, CMOS OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● UNITY-GAIN BANDWIDTH: 450MHz The OPAx356 series high-speed, voltage-feedback CMOS operational amplifiers are designed for video and other

Contextual Info: OPA OPA2 356 OPA OPA356 OPA2356 2356 356 SBOS212A – NOVEMBER, 2001 200MHz, CMOS OPERATIONAL AMPLIFIER FEATURES DESCRIPTION ● UNITY-GAIN BANDWIDTH: 450MHz The OPAx356 series high-speed, voltage-feedback CMOS operational amplifiers are designed for video and other

414 B zenar diode

Abstract: zener diode on 822 zener diode t5 umi 122 ZENER DIODE SMA marking E10 DIODE ci 741A je200 marking AHL ZENER A4
Contextual Info: TAIWAN SEMICONDUCTOR s à RoHS 1S M A 4737 - 1S M A 200Z 1.0 W atts Surface Mount Silicon Zener Diode COMPLIANCE S M A /D O -2 1 4 A C n I n Features -0- Q ualified as p er AEC-Q101 4- F or surface m ounted applications in order to optim ize board space Low profile package