OC 140 GERMANIUM TRANSISTOR Search Results

kt420

Abstract: ac176 CV7002 bc109 Transistor Equivalent list BSY95A diffused alloy BC146 BCY70 asy26
Contextual Info: Introduction This summary contains abridged information on the range of NKT semiconductor products, and the five main product groups are listed below. a HYBRID MICROCIRCUITS b) SILICON TRANSISTORS c) DIODES AND ANCILLIARY DEVICES d) GERMANIUM TRANSISTORS

SKY65050-372LF

Contextual Info: Skyworks Low Noise Amplifiers, Transistors and Drivers ADC Rx LNA Q Receive Digital Baseband Out IF AGC LNA ADC I Transmit Typical Receiver Block Diagram Skyworks’ new Low Noise Amplifier LNA products meet the demanding ultra low noise figure and high linearity needs of

transistor kc 2026

Abstract: 2n2079 2N1099 GERMANIUM* 2n1099 2N2082 transistor sec 621 2n173 2N2079A MIL-S-19500 FOR POWER LINE TRANSISTOR kc 2026
Contextual Info: M IL -S-19500/340 17 December 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, PNP, GERMANIUM, HIGH-POWER TYPE 2N2079A This specification Is mandatory for use by all D epart­ m ents and Agencies of the D epartm ent of Defense. 1 s SCOPE 1.1 Scope. T his specification covers the detailed req u irem en ts for a high-pow er, germanium,

GY 123

Abstract: SY 170 gd 241 c gd241c funkamateur sy 166 sy 164 VSF203 VSF200 SF 127
Contextual Info: Preisliste für Halbleiterbauelemente gültig ab 18. November 1969 Type EVP alt M ark EVP neu M ark Germanium- und Silizium-Gleichrichter GY 099 GY 100 GY 101 GY 102 GY 103 GY 104 GY 105 GY 109 GY 110 GY 111 GY 112 GY 113 GY 114 GY 115 GY 120 GY 121 GY 122

2N5508

Abstract: 2N1019 l53b 5 2N4241 BC138 2SJ11 Transistors 2n551 2N3523 2N550 2N551
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

MP21E

Abstract: sowjetische transistoren MP21D UdSSR KT904 ASZ16 KT315 OC1072 Transistoren DDR asz1015
Contextual Info: electronic Sowjetische Transistoren I n h a l t s v e r z e i c h n i s V o rw o rt K u rz c h a ra lc te rls tlk - G e rm a n iu n tra n s is to re n - S illz lu m tra n s ito re n S t a a t l i c h e r S ta n d a r d d e s S y ste m s f ü r d i e B e z e ic h n u n g d e r H a l b l e i t e r b a u e l e u e n t e d e r UdSSR

transistor cross reference

Abstract: MPT3N40 Westinghouse SCR handbook LT 8224 ZENER DIODE sje389 N9602N npn transistor RCA 467 TFK 7 segment displays PUT 2N6027 delco 466
Contextual Info: C K TBD DOLLY LIST LOGO LIST SAFETY & RELIABLTY TEK PN SYSTEM II DIGITAL IC's MEMORIES. MOS. CM OS.ECL. TTL MICROPROCESSOR SPECIAL FUNCTION IC's DIGITAL / LINEAR ARRAYS LINEAR IC'S (PURCH) TEK-MADE IC’s 3 IC's INDEX (COLORED PGS) INCL PRGMD. SCRND.ETC

DM6030HK

Abstract: TS3332LD XD1001-BD XD1001-BD-000V XD1001-BD-EV1
Contextual Info: 18.0-50.0 GHz GaAs MMIC Distributed Amplifier June 2007 - Rev 14-Jun-07 D1001-BD Features Ultra Wide Band Driver Amplifier Fiber Optic Modulator Driver 17.0 dB Small Signal Gain 5.0 dB Noise Figure 30 dB Gain Control +15.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

XD1001

Abstract: 84-1LMI D1001
Contextual Info: 18.0-50.0 GHz GaAs MMIC Distributed Amplifier May 2005 - Rev 01-May-05 D1001 Features Chip Device Layout Ultra Wide Band Driver Amplifier Fiber Optic Modulator Driver 17.0 dB Small Signal Gain 5.0 dB Noise Figure 30 dB Gain Control +15.0 dBm P1dB Compression Point

2N4241

Abstract: OC74 CM601 2N4042 BSV39 2N3523 bc143 BC222 TRANSISTOR ft06 200S
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E N o. H H TYPE N o. I I M IN . M A X P c ID ER ATE FREE A IR @ J to C 2 5 'C

DM603

Abstract: tanaka gold wire DM6030HK TS3332LD XD1001-BD XD1001-BD-000V XD1001-BD-EV1 ts333
Contextual Info: 18.0-50.0 GHz GaAs MMIC Distributed Amplifier July 2008 - Rev 14-Jul-08 D1001-BD Features Ultra Wide Band Driver Amplifier Fiber Optic Modulator Driver 17.0 dB Small Signal Gain 5.0 dB Noise Figure 30 dB Gain Control +15.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

01APR05

Contextual Info: 7.5-22.5/15.0-45.0 GHz GaAs MMIC Active Doubler 40DBL0458 April 2005 - Rev 01-Apr-05 Features Chip Device Layout tio n Excellent Broadband Mixer Driver Single Ended Fed Doubler with Distributed Buffer Amplifier Can be Used to Drive Mimix Receiver +13 dBm Output Drive at +0 dBm Input

transistor C3866

Abstract: Zener PH SEC E13009 ups circuit schematic diagram 1000w E13007 2 E13007 C3866 power transistor texas ttl 74L505 Transistor C3246
Contextual Info: BID CΚΤ DOLLY L IST L OGO LIST SA F E TY & RELIA ΒL TY ΤΕΚ PIN SYSTE M DIGITA L IC's MEMORIES, MOS CMOS .EC L , TT L MICR OP R OC E SSOR SPE CIA L FUN CTION IC's DIGITAL l LINE AR K ARR AYS LIN E A R IC's (PUR CH ) ΤΕΚ-MADE IC's IC's INDEX (COL ORE D PGS)

2Xf transistor

Abstract: TRANSISTOR 2xf xf 2 6-pin B 1566 Transistor
Contextual Info: 7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler X1000 June 2006 - Rev 23-Jun-06 Features Excellent Broadband Mixer Driver Single Ended Fed Doubler with Distributed Buffer Amplifier Excellent LO Driver for Mimix Receivers +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing

D1002-BD

Abstract: DM6030HK TS3332LD XD1002-BD XD1002-BD-000V XD1002-BD-EV1
Contextual Info: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier July 2007 - Rev 11-Jul-07 D1002-BD Features Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

ts333

Abstract: CMM0618-BD tanaka epoxy tanaka wire TS3332LD CMM0618-BD-000V DM6030HK M400 PB-CMM0618-BD-0000 VG29
Contextual Info: 6.0-18.0 GHz GaAs MMIC Power Amplifier CMM0618-BD August 2007 - Rev 30-Aug-07 Features Chip Device Layout Wide Band Power Amplifier Positive Gain Slope 10.5 dB Small Signal Gain +29.0 dBm P1dB Compression Point +36.0 dBm Third Order Intercept 100% Visual Inspection to MIL-STD-883

TRANSISTOR 2xf

Contextual Info: 7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler X1000 September 2005 - Rev 01-Sep-05 Features Chip Device Layout Excellent Broadband Mixer Driver Single Ended Fed Doubler with Distributed Buffer Amplifier Excellent LO Driver for Mimix Receivers +15 dBm Output Drive

6.0-18.0 GHz mmic

Abstract: CMM0618-BD CMM0618-BD-000V DM6030HK M400 PB-CMM0618-BD-0000 TS3332LD
Contextual Info: 6.0-18.0 GHz GaAs MMIC Power Amplifier CMM0618-BD August 2007 - Rev 30-Aug-07 Features Chip Device Layout Wide Band Power Amplifier Positive Gain Slope 10.5 dB Small Signal Gain +29.0 dBm P1dB Compression Point +36.0 dBm Third Order Intercept 100% Visual Inspection to MIL-STD-883

Contextual Info: 6.0-18.0 GHz GaAs MMIC Power Amplifier CMM0618-BD April 2007 - Rev 26-Apr-07 Features Chip Device Layout Wide Band Power Amplifier Positive Gain Slope 10.5 dB Small Signal Gain +29.0 dBm P1dB Compression Point +36.0 dBm Third Order Intercept 100% Visual Inspection to MIL-STD-883

D1002

Abstract: mmic distributed amplifier 84-1LMI XD1002
Contextual Info: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier August 2005 - Rev 04-Aug-05 D1002 Features Chip Device Layout Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

2Xf transistor

Abstract: 84-1LMI X1000 XR1002 XX1000 balun GHz broadband TRANSISTOR 2xf
Contextual Info: 7.5-25.0/15.0-50.0 GHz GaAs MMIC Active Doubler X1000 April 2006 - Rev 10-Apr-06 Features Excellent Broadband Mixer Driver Single Ended Fed Doubler with Distributed Buffer Amplifier Excellent LO Driver for Mimix Receivers +15 dBm Output Drive 100% On-Wafer RF, DC and Output Power Testing

Contextual Info: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier May 2005 - Rev 05-May-05 D1002 Features Chip Device Layout Ultra Wide Band Driver Amplifier Fiber Optic Modulator Driver 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point

mmic distributed amplifier

Contextual Info: 0.05-50.0 GHz GaAs MMIC Distributed Amplifier July 2008 - Rev 14-Jul-08 D1002-BD Features Wide Band Driver Amplifier 9.0 dB Small Signal Gain 5.0 dB Noise Figure 15.0 dB Gain Control +9.0 dBm P1dB Compression Point 100% On-Wafer RF, DC and Output Power Testing

2n3054

Abstract: RCA transistor 40410 RCA 40310 2n2870 RCA 40636 transistor transistor 40410 ta7719 2n2338 2N2405 2N2147
Contextual Info: jo is is u e jj. J 9 M O d .1 1 - <r*#► • 1 - t * « 1 I -tr 14 p i-er 2 1 his edition of the P o w e r T r a n s is to r D ir e c ­ to r y has been completely revised to reflect new An important change in this Directory is in the Index of Types which has been expanded to include