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    OF IGBT 300A 500V Search Results

    OF IGBT 300A 500V Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    GT30J110SRA Toshiba Electronic Devices & Storage Corporation IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation
    XPN1300ANC Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 30 A, 0.0133 Ω@10V, TSON Advance(WF) Visit Toshiba Electronic Devices & Storage Corporation
    TPD4206F Toshiba Electronic Devices & Storage Corporation Intelligent power device 500V (High voltage PWM DC brushless motor driver) Visit Toshiba Electronic Devices & Storage Corporation
    TLP5702H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation
    TLP5705H Toshiba Electronic Devices & Storage Corporation Photocoupler (Gate Driver Coupler), High-Topr / IGBT driver, 5000 Vrms, SO6L Visit Toshiba Electronic Devices & Storage Corporation

    OF IGBT 300A 500V Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    circuit diagram of single phase water pump

    Abstract: 12v -230v 200W inverter CIRCUIT DIAGRAM 12V 230V Inverter Diagram 3 phase inverter ir2130 12V 230V Inverter Diagram for IGBT 12v to 230v inverters circuit diagrams single phase inverter IGBT driver 3 phase brushless dc control ir2130 ecn3051 circuit diagram of hitachi washing machine
    Text: +,7$&+, 3RZHU 6HPLFRQGXFWRU 3URGXFW - ,*%7 PRGXOH - +LJK 9ROWDJH ,& Motor driver, MOS/IGBT gate driver - 6XUJH 6XSSUHVVRU 3RZHU 'LRGH - +LJK 9ROWDJH )DVW 5HFRYHU\ 'LRGH +LWDFKL ,*%7 0RGXOHV


    Original     		PDF 66HULHV DHM3FJ60 DHM3J120 DHM3C140 DHM3D160 DHM3FG80 DHM3FL80 82kHz DHM3HA80 DHM3HB120 circuit diagram of single phase water pump 12v -230v 200W inverter CIRCUIT DIAGRAM 12V 230V Inverter Diagram 3 phase inverter ir2130 12V 230V Inverter Diagram for IGBT 12v to 230v inverters circuit diagrams single phase inverter IGBT driver 3 phase brushless dc control ir2130 ecn3051 circuit diagram of hitachi washing machine

    application igbt

    Abstract: HF3020C-TM
    Text: HF3000C-TM Series 3 Phase & 3 lines 500VAC for EMC directive,class A,B Standard of High attenuation Type UL1283,EN133200 TUV Application IGBT inverter/AC servo/NC controller etc. Specifications Part No. Rated Current Weight Dimmension [mm] A B C D E F G H


    Original     		PDF HF3000C-TM 500VAC UL1283 EN133200 HF3005C-TM HF3010C-TM HF3015C-TM HF3020C-TM HF3030C-TM HF3040C-TM application igbt

    application igbt

    Abstract: No abstract text available
    Text: HF3000C-TMA Series 3 Phase & 3 lines 500VAC for EMC directive,class A,B Standard of High attenuation Type EN133200 TUV Application IGBT inverter/AC servo/NC controller etc. Specifications Part No. Rated Current Weight Dimmension [mm] A B C D E F G H J K L


    Original     		PDF HF3000C-TMA 500VAC EN133200 HF3005C-TMA HF3010C-TMA HF3015C-TMA HF3020C-TMA HF3030C-TMA HF3040C-TMA HF3050C-TMA application igbt

    application igbt

    Abstract: soshin
    Text: SOSHIN ELECTRIC CO., LTD. Page 1 of 7 HF3000C-XZ Series 3 Phase & 3 lines 500VAC Good for installation UL1283,EN133200 TUV Click here (PDF 120KB) Application IGBT inverter/AC servo/NC controller etc. Specifications Part No. Rated Current Weight Dimmension [mm]


    Original     		PDF HF3000C-XZ 500VAC UL1283 EN133200 120KB) HF3010C-XZ HF3030C-XZ HF3050C-XZ HF3100C-XZ HF3150C-XZ application igbt soshin

    IGBT 2000V .50A

    Abstract: Hitachi motor driver 1200v 50A IGBT photovoltaic module ECN3067 traction motor IGBT Single 1200v 1000a ac motor electric vehicle igbt uses in rectifier
    Text: January 1998 14 No. Hitachi Power Devices Technical Information PD Room Happy New Year! We will keep providing you with new technical information about power device products this year, as we did last year. Your continued patronage will be highly appreciated.


    Original     		PDF ECN3067 IGBT 2000V .50A Hitachi motor driver 1200v 50A IGBT photovoltaic module ECN3067 traction motor IGBT Single 1200v 1000a ac motor electric vehicle igbt uses in rectifier

    SCR bridge 600V "power module"

    Abstract: 150a 400v diode bridge SCR Inverter datasheet scr characteristics G150SPBK06P3H VR14 Zener Diodes 300v Bridge diodes G150SPBK06P3
    Text: PD-97398 HiRel TM INT-A-Pak 3, PLASTIC FULL-BRIDGE IGBT MODULE G150SPBK06P3H Product Summary Part Number VCE IC G150SPBK06P3H 600V 150A VCE SAT 2.3V Typ. 2.6V Max. HiRelTM INT-A-Pak 3 The HiRelTM INT-A-Pak series are isolated near hermetic power modules which combine the latest


    Original     		PDF PD-97398 G150SPBK06P3H MIL-PRF-38534 SCR bridge 600V "power module" 150a 400v diode bridge SCR Inverter datasheet scr characteristics G150SPBK06P3H VR14 Zener Diodes 300v Bridge diodes G150SPBK06P3

    Untitled

    Abstract: No abstract text available
    Text: PD-97398 HiRel TM INT-A-Pak 3, PLASTIC FULL-BRIDGE IGBT MODULE G150SPBK06P3H Product Summary Part Number VCE IC G150SPBK06P3H 600V 150A VCE SAT 2.3V Typ. 2.6V Max. HiRelTM INT-A-Pak 3 The HiRelTM INT-A-Pak series are isolated near hermetic power modules which combine the latest


    Original     		PDF PD-97398 G150SPBK06P3H MIL-PRF-38534

    SCS205KG

    Abstract: SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ
    Text: SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now offers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.


    Original     		PDF 000A-class) 56P6733E 1500SG SCS205KG SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ

    P-Channel mosfet 400v to220

    Abstract: IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V
    Text: APEC '99 Trench-Gate Technology for The Next Generation of MOS Power Devices IEEE, APEC Conference 1999 Eric R. Motto Sr. Application Engineer Powerex Inc. Youngwood PA USA APEC '99 Introduction 1. The Trench Gate Structure, Development History and Advantages


    Original     		PDF CM600HA-5F CM450HA-5F CM350DU-5F CM200TU-5F CT60AM-18B P-Channel mosfet 400v to220 IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V

    Untitled

    Abstract: No abstract text available
    Text: Technical Information PrimeSTACK 6PS0450R12KE4-3WH-VT Vorläufige Daten preliminary data Key data 3x 300A rms at 500V rms, water cooled General information Stacks for various inverter application. Semiconductors, heat sinks, drivers and sensors included. These are only technical data!


    Original     		PDF 6PS0450R12KE4-3WH-VT BBC35 1231423567896AB3C736DCEF32 4112BF3567896

    Untitled

    Abstract: No abstract text available
    Text: SENSITRON SEMICONDUCTOR MOD1004 TECHNICAL DATA DATA SHEET 1125, REV. 12 1 2 3 4 5 11 10 9 8 7 6 600 VOLT, 40 AMP IGBT H-BRIDGE ELECTRICAL CHARACTERISTICS PER IGBT DEVICE PARAMETER Tj=250C UNLESS OTHERWISE SPECIFIED SYMBOL MIN TYP MAX UNIT 600 - - V - - 40


    Original     		PDF MOD1004 /-20V

    k50t60

    Abstract: K50t60 igbt
    Text: IKW50N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original     		PDF IKW50N60T k50t60 K50t60 igbt

    IKW50N60T

    Abstract: K50T60 k50t60 pdf datasheet Datasheet k50t60 "Power Diode" 500V 20A 1280A PG-TO-247-3
    Text: IKW50N60T q TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode • • • • • • • • • • • • C Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original     		PDF IKW50N60T IKW50N60T K50T60 k50t60 pdf datasheet Datasheet k50t60 "Power Diode" 500V 20A 1280A PG-TO-247-3

    Untitled

    Abstract: No abstract text available
    Text: IKB20N60T p TrenchStop Series Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon 3 diode C • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C


    Original     		PDF IKB20N60T

    OF IGBT 300A 500V

    Abstract: IRGTDN300M06 ETH9
    Text: brtemational Im i Rectifier Provisional Data Sheet PD-9.1179 IRGTDN300M06 Low conduction loss IGBT "HALF-BRIDGE" IGBT DOUBLE INT-A-PAK Half-Bridge —O3 VCE = 600V lc = 300A • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail"


    OCR Scan     		PDF IRGTDN300M06 C-462 OF IGBT 300A 500V IRGTDN300M06 ETH9

    Untitled

    Abstract: No abstract text available
    Text: Provisional Datasheet PD-9.1195 bitemational iôhRectifier IRGDDN300K06 IRGRDN300K06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE= 600V lc =300A • Rugged Design •Simple gate-drive •Switching-Loss Rating includes all "tail" losses


    OCR Scan     		PDF IRGDDN300K06 IRGRDN300K06 C-1012

    C451

    Abstract: No abstract text available
    Text: International iqrIRectifier Provisional Data Sheet PD-9.1174 IRGDDN300M06 IRGRDN300M06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 300A • Rugged Design • Simple gate-drive • Switching-Loss Rating includes all "tail"


    OCR Scan     		PDF IRGDDN300M06 IRGRDN300M06 hiOutline13 C-452 C451

    OF IGBT 300A 500V

    Abstract: irgddn300m06 IGBT tail time C452 C451
    Text: International Rectifier Provisional Data Sheet PD-9.1174 RG N300M06 RG RDN300M06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT . Rugged Design • Simple gate-drive .Switching-Loss Rating includes all "tail“ losses • Short circuit rated


    OCR Scan     		PDF N300M06 RDN300M06 Outline13 C-452 SS452 002DSME OF IGBT 300A 500V irgddn300m06 IGBT tail time C452 C451

    OF IGBT 300A 500V

    Abstract: SWITCHING WELDING BY MOSFET IGBT tail time C1022 IRGTDN300K06 INTAPAK package igbt 600V 300A RG150
    Text: International khíRectifier Provisional Data Sheet PD-9.1199 IRGTDN300K06 "H A L F-B R ID G E " IG B T D O U B L E IN T-A-PAK Low conduction loss IG B T VCE= 600V lc = 300A «Rugged Design .Sim ple gate-drive • Switching-Loss Rating Includes all "tail" losses


    OCR Scan     		PDF IRGTDN300K06 C-1022 OF IGBT 300A 500V SWITCHING WELDING BY MOSFET IGBT tail time C1022 IRGTDN300K06 INTAPAK package igbt 600V 300A RG150

    OF IGBT 300A 500V

    Abstract: D-18 IRGDDN300K06 IRGRDN300K06 igbt 600V 300A C1012
    Text: International [ï §r]Rectifier Provisional D ata S h eet P D -9 .1 1 9 5 IRGDDN300K06 IRGRDN300K06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE= 600V • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail"


    OCR Scan     		PDF IRGDDN300K06 IRGRDN300K06 C-1012 fiSS452 OF IGBT 300A 500V D-18 IRGRDN300K06 igbt 600V 300A C1012

    IRGDDN400K06

    Abstract: power diode 400A VQE 11 400A mosfet vqe 13
    Text: Provisional Data Sheet PD-9.1196 bitemational ïôHRectifier IRGDDN400K06 IRGRDN400K06 Low conduction loss IGBT "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK VCE= 600V lc = 400A •Rugged Design •Sim ple gate-drive .Switching-Loss Rating includes all ‘tail" losses


    OCR Scan     		PDF IRGDDN400K06 IRGRDN400K06 power diode 400A VQE 11 400A mosfet vqe 13

    IRGDDN400M06

    Abstract: c454 INTAPAK package mosfet 400a
    Text: International ^Rectifier Provisional Data Sheet PD-9.1175 IRGDDN400M06 IRGRDN400M06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK Low conduction loss IGBT VCE = 600V lc = 400A • Rugged Design • Simple gate-drive •Switching-Loss Rating includes all "tail" losses


    OCR Scan     		PDF IRGDDN400M06 IRGRDN400M06 Outline13 C-454 GG2Q244 c454 INTAPAK package mosfet 400a

    mosfet ir 840

    Abstract: irgddn400k06 OF IGBT 300A 500V 400A mosfet
    Text: International g ! Rectifier Provisional Data Sheet PD-9.1196 IRGDDN400K06 IRGRDN400K06 Low conduction loss IGBT "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK VCE = 600V lc = 400A • Rugged Design .Simple gate-drive •Switching-Loss Rating includes all "tail" losses


    OCR Scan     		PDF IRGDDN400K06 IRGRDN400K06 C-1014 mosfet ir 840 OF IGBT 300A 500V 400A mosfet

    IRGDDN400M06

    Abstract: 400V 400A mosfet
    Text: International iël] Rectifier Provisional Data Sheet PD -9.1175 IRGDDN400M06 IRGRDN400M06 "SINGLE SWITCH" IGBT DOUBLE INT-A-PAK IRGDD. Low conduction loss IGBT IRGRD. VCE = 600V A • Rugged Design • Sim ple gate-drive •Sw itching-Loss Rating includes all “tail"


    OCR Scan     		PDF IRGDDN400M06 IRGRDN400M06 Outline13 400V 400A mosfet