OF NPN TRANSITOR Search Results

OF NPN TRANSITOR Result Highlights (5)

Part	Manufacturer	Description
TTC022	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini
TTC020	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini
TTC5886A	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=50 V / IC=5 A / hFE=400~1000 / VCE(sat)=0.22 V / tf=120 ns / New PW-Mold
TPCP8513	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PS-8
2SC5200	Toshiba Electronic Devices & Storage Corporation	NPN Bipolar Transistor / VCEO=230 V / IC=15 A / hFE=55~160 / VCE(sat)=3.0 V / TO-3P(L)

OF NPN TRANSITOR Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
CMPT3906E Abstract: transitor CMPT3904 CMPT3904E CMPT3906 X10-4 Contextual Info: Central CMPT3904E NPN CMPT3906E PNP Semiconductor Corp. ENHANCED SPECIFICATION SURFACE MOUNT COMPLEMENTARY SILICON TRANSITORS DESCRIPTION: The Central Semiconductor CMPT3904E , CMPT3906E are Enhanced versions of the CMPT3904, CMPT3906 complementary switching	Original	CMPT3904E CMPT3906E CMPT3904E CMPT3904, CMPT3906 OT-23 CMPT3906E) CMPT3904E) transitor CMPT3904 X10-4	PDF
CMPT3904 Abstract: CMPT3904E CMPT3906 CMPT3906E X10-4 Contextual Info: Central CMPT3904E NPN CMPT3906E PNP ENHANCED SPECIFICATION COMPLEMENTARY SILICON TRANSITORS SOT-23 CASE MAXIMUM RATINGS: TA=25°C ♦ TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPT3904E , CMPT3906E are Enhanced versions of the CMPT3904, CMPT3906	Original	CMPT3904E CMPT3906E OT-23 CMPT3904E CMPT3906E CMPT3904, CMPT3906 CMPT3906E) CMPT3904 CMPT3906 X10-4	PDF
c1ae Abstract: c1ae application marking code c1ae CMPT3904 CMPT3904E CMPT3906 CMPT3906E X10-4 C1AE SOT23 Contextual Info: Central CMPT3904E NPN CMPT3906E PNP ENHANCED SPECIFICATION COMPLEMENTARY SILICON TRANSITORS SOT-23 CASE MAXIMUM RATINGS: TA=25°C ♦ TM Semiconductor Corp. DESCRIPTION: The Central Semiconductor CMPT3904E , CMPT3906E are Enhanced versions of the CMPT3904, CMPT3906	Original	CMPT3904E CMPT3906E OT-23 CMPT3904E CMPT3906E CMPT3904, CMPT3906 CMPT3906E) CMPT3904E) c1ae c1ae application marking code c1ae CMPT3904 CMPT3906 X10-4 C1AE SOT23	PDF
Contextual Info: CMPT3904E CMPT3906E Central NPN PNP Semiconductor Corp. ENHANCED SPECIFICATION DESCRIPTION: The Central Semiconductor CMPT3904E , CMPT3906E are Enhanced versions of the CMPT3904, CMPT3906 complementary switching transistors in a SOT-23 surface mount package,	OCR Scan	CMPT3904E CMPT3906E OT-23 CMPT3904E CMPT3906E CMPT3904, CMPT3906 CMPT3906E)	PDF
BD204 Abstract: BD202 BD203 BD203 npn BD201 Contextual Info: PNP BD202 – BD204 NPN BD201 – BD203 SILCON EPITAXIAL-BASE POWER TRANSITORS The BD202 and BD204 are PNP transistors mounted in Jedec TO-220 plastic package. They are primarily intended for use in if-hi equipment delivering an output of 15 to 25 W into 4Ω or	Original	BD202 BD204 BD201 BD203 BD202 BD204 O-220 BD201 BD203 BD203 npn	PDF
Contextual Info: Centrar CMPT3904E NPN CMPT3906E PNP Semiconductor Corp. EN H A N C E D SPECIFICATIO N DESCRIPTION: The Central Semiconductor CMPT3904E , CMPT3906E are Enhanced versions of the CMPT3904, CMPT3906 complementary switching transistors in a SOT-23 surface mount package,	OCR Scan	CMPT3904E CMPT3906E CMPT3904E CMPT3904, CMPT3906 OT-23 CMPT3906E) CMPT3904E)	PDF
capacitor 10MF smd Abstract: 10mf 16v 0603 capacitor 10mf 6v capacitor SMD footprint 10uH inductor 1mF CAPACITOR capacitor 10mf 16v CAPACITOR SMD sot-23 C6 CDRH6D28-100NC Contextual Info: Bill of Materials for the NCP 1450 Bipolar Transitor 3.3V Demonstration Board h 8/28/2003 Designator Quantity IC2 D2 Q2 C5 C4 C6 Cb Rb L2 1 1 1 1 1 1 1 1 1 Description Value PWM Step-up DC-DC controller Schottky Power Rectifier Bipolar Power NPN Low Profile Tantalum Capacitor	Original	220mF 3000pF 10uH/1 OT-23 OT223 capacitor 10MF smd 10mf 16v 0603 capacitor 10mf 6v capacitor SMD footprint 10uH inductor 1mF CAPACITOR capacitor 10mf 16v CAPACITOR SMD sot-23 C6 CDRH6D28-100NC	PDF
10mf 16v 0603 Abstract: npn smd 3a capacitor 10MF smd capacitor SMD footprint NCP1450 CAPACITOR TANTALUM panasonic H8 SOT-23 CDRH6D28-100NC 10uH inductor capacitor 10mf 16v Contextual Info: Bill of Materials for the NCP 1450 Bipolar Transitor 5.0V Demonstration Board h 8/28/2003 Designator Quantity IC2 D2 Q2 C5 C4 C6 Cb Rb L2 1 1 1 1 1 1 1 1 1 Description Value PWM Step-up DC-DC controller Schottky Power Rectifier Bipolar Power NPN Low Profile Tantalum Capacitor	Original	220mF 3000pF 10uH/1 OT-23 NCP1450ASN50T1 MBRM110L OT22Capacitor 10mf 16v 0603 npn smd 3a capacitor 10MF smd capacitor SMD footprint NCP1450 CAPACITOR TANTALUM panasonic H8 SOT-23 CDRH6D28-100NC 10uH inductor capacitor 10mf 16v	PDF
capacitor 10MF Abstract: capacitor 10mf 16v inductor 10uH capacitor 10MF smd NCP1450 10mf 16v 0603 H8 SOT-23 npn smd 3a 10uH inductor 1mF CAPACITOR Contextual Info: Bill of Materials for the NCP 1450 Bipolar Transitor 3.0V Demonstration Board h 8/28/2003 Designator Quantity IC2 D2 Q2 C5 C4 C6 Cb Rb L2 1 1 1 1 1 1 1 1 1 Description Value PWM Step-up DC-DC controller 3.0 V Schottky Power Rectifier Bipolar Power NPN 3A 30V	Original	220mF 3000pF 10uH/1 OT-23 NCP1450ASN30T1 MBRM110L OT22ofile capacitor 10MF capacitor 10mf 16v inductor 10uH capacitor 10MF smd NCP1450 10mf 16v 0603 H8 SOT-23 npn smd 3a 10uH inductor 1mF CAPACITOR	PDF
10mf 16v 0603 Abstract: H8 SOT-23 npn smd 3a 0603 smd CAPACITOR 0603 10UH NCP1450 capacitor 10MF smd cdrh6d28-100nc 10uH inductor 1mF CAPACITOR Contextual Info: Bill of Materials for the NCP 1450 Bipolar Transitor 2.7V Demonstration Board h 8/28/2003 Designator Quantity IC2 D2 Q2 C5 C4 C6 Cb Rb L2 1 1 1 1 1 1 1 1 1 Description Value PWM Step-up DC-DC controller Schottky Power Rectifier Bipolar Power NPN Low Profile Tantalum Capacitor	Original	220mF 3000pF 10uH/1 OT-23 NCP1450ASN27T1 MBRM110L 10mf 16v 0603 H8 SOT-23 npn smd 3a 0603 smd CAPACITOR 0603 10UH NCP1450 capacitor 10MF smd cdrh6d28-100nc 10uH inductor 1mF CAPACITOR	PDF
3904 ic Abstract: 3904 NPN k 4213 transistor k 4213 BFR340L3 Contextual Info: BFR340L3 NPN Silicon RF Transistor Preliminary data Low voltage/ Low current operation 3 Transition frequency of 14 GHz High insertion gain 1 Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR340L3 EHA07536 Jun-16-2003 3904 ic 3904 NPN k 4213 transistor k 4213 BFR340L3	PDF
K 3677 Contextual Info: BFR340T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation Transition frequency of 14 GHz High insertion gain 2 Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR340T VPS05996 K 3677	PDF
infineon marking code L2 Contextual Info: BFR340T NPN Silicon RF Transistor* • Low voltage/ low current operation • Transition frequency of 14 GHz 2 3 1 • High insertion gain • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR340T infineon marking code L2	PDF
K 3677 Abstract: marking FA Contextual Info: BFR340L3 NPN Silicon RF Transistor Preliminary data Low voltage/ Low current operation 3 Transition frequency of 14 GHz High insertion gain 1 Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR340L3 K 3677 marking FA	PDF

Contextual Info: BFR340F NPN Silicon RF Transistor Preliminary data • Low voltage/ low current operation 2 3 • Transition frequency of 14 GHz • High insertion gain 1 • Ideal for low current amplifiers and oscillators ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR340F	PDF
p8010 Contextual Info: BFR340F NPN Silicon RF Transistor* • Low voltage/ low current operation 2 3 • Transition frequency of 14 GHz 1 • High insertion gain • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR340F p8010	PDF
p8010 Contextual Info: BFR340F NPN Silicon RF Transistor Preliminary data • Low voltage/ low current operation 2 3 • Transition frequency of 14 GHz • High insertion gain 1 • Ideal for low current amplifiers and oscillators ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR340F Jul-15-2004 p8010	PDF
BFR340T Contextual Info: BFR340T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation Transition frequency of 14 GHz High insertion gain 2 Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR340T VPS05996 BFR340T	PDF
TRANSISTOR MARKING NK Abstract: transistor bf 271 p 605 transistor equivalent BFR340T Contextual Info: BFR340T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation Transition frequency of 14 GHz High insertion gain 2 Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR340T VPS05996 EHA07536 Jan-29-2002 TRANSISTOR MARKING NK transistor bf 271 p 605 transistor equivalent BFR340T	PDF
marking FA Contextual Info: BFR340L3 NPN Silicon RF Transistor Preliminary data Low voltage/ Low current operation 3 Transition frequency of 14 GHz High insertion gain 1 Ideal for low current amplifiers and oscillators 2 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR340L3 marking FA	PDF
BFR340F Abstract: G1217 Contextual Info: BFR340F NPN Silicon RF Transistor Preliminary data Low voltage/ low current operation 2 3 Transition frequency of 14 GHz High insertion gain 1 Ideal for low current amplifiers and oscillators ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR340F Jul-01-2003 -j100 BFR340F G1217	PDF
BFR193L3 Abstract: BFR340L3 marking FA Contextual Info: BFR340L3 NPN Silicon RF Transistor* • Low voltage/ Low current operation • Transition frequency of 14 GHz 3 1 • High insertion gain 2 • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR340L3 BFR193L3 BFR340L3 marking FA	PDF
transistor k 4213 Abstract: BFR340T transitor RF 98 SC75 BFR34* transistor Contextual Info: BFR340T NPN Silicon RF Transistor 3 Preliminary data Low voltage/ low current operation Transition frequency of 14 GHz High insertion gain 2 Ideal for low current amplifiers and oscillators 1 VPS05996 ESD: Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR340T VPS05996 EHA07536 Jul-01-2003 transistor k 4213 BFR340T transitor RF 98 SC75 BFR34* transistor	PDF
marking FA Abstract: BFR340T Contextual Info: BFR340T NPN Silicon RF Transistor* • Low voltage/ low current operation • Transition frequency of 14 GHz 2 3 1 • High insertion gain • Ideal for low current amplifiers and oscillators * Short term description ESD Electrostatic discharge sensitive device, observe handling precaution!	Original	BFR340T marking FA BFR340T	PDF

OF NPN TRANSITOR Search Results

OF NPN TRANSITOR Result Highlights (5)

OF NPN TRANSITOR Datasheets Context Search

CMPT3906E

CMPT3904

c1ae

BD204

capacitor 10MF smd

10mf 16v 0603

capacitor 10MF

10mf 16v 0603

3904 ic

K 3677

infineon marking code L2

K 3677

p8010

p8010

BFR340T

TRANSISTOR MARKING NK

marking FA

BFR340F

BFR193L3

transistor k 4213

marking FA