OF RECTIFIER DIODE Search Results

secos gmbh

Abstract: SMBJ11CA SM4005A SMBJ130CA SMBJ14CA SMBJ16CA SMBJ160CA BZV55C6V2 BZV55C12 SMBJ13CA
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier Small Signal Bridge B1 - B2 General Rectifier C1 - C4 Fast Rectifier D1 - D3 》Super Fast Low Loss Super Fast E1 - E3 High Efficiency G1 - G3 Schottky H1 - H3 Switching I1- I3

secos gmbh

Abstract: c945 p 331 transistor npn SM2150AM SM1150AM c945 p 331 transistor SMBJ11CA 2sd2142 SM4005A SSG8 pzt649
Contextual Info: Table of Contents Diodes Rectifier Schottky Rectifier 》Low VF Schottky Rectifier C1 - C5 Fast Rectifier D1 - D3 Low Loss Super Fast Bridge E1 - E3 F1 High Efficiency G1 - G4 Schottky H1 - H3 Switching I1- I3 PiN Diode J1 Bridge Rectifier 》 Fast Bridge Rectifiers

IR19TQ15

Abstract: IRFIZ24N
Contextual Info: Thermal Dynamical Response of 15V Or-ing Schottky Diodes in high temperature applications September 15th, 1999 Alberto Guerra and Francesco Vallone Department of Input/Output Rectifier International Rectifier, 1521 Grand, El Segundo 90245, California, U.S.A.

SW04-15PHR470

Abstract: SW04 WESTCODE SW16-24PHN380
Contextual Info: Rectifier Diodes - Stud Types Product une of WISTCODi A n n i X Y S Com pany Westcode's rectifier devices are designed to survive even the most arduous of applications. These highly reliable components are suitable for all rectifier applications, including traction, industrial drives and substations. Voltages to 6kV and currents to 8kA.

oms 450

Abstract: IRD3899 IRD3900 IRD3901 IRD3903 IRD3909 IRD3913 AV2030 b101 diode g810
Contextual Info: SS INTERNATIONAL RECTIFIER 4855452 d Ë T | 4ASS4SS DDD4TÌ3 Ö D 55C 0 4 9 9 3 INTERNATIONAL RECTIFIER Data Sheet No. PD-2.092 Y ' INTERNATIONAL RECTIFIER IÖR of ~ < 1 IRD3899, IRD3909 SERIES 8 0 and 3 0 Amp Fast Recovery Rectifier Diodes Description Major Ratings and Characteristics

BY249

Contextual Info: BY249 SERIES A _ SILICON RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in T0-220 plastic envelopes, intended for power rectifier applications. The series consists of the following types: Normal polarity cathode to base plate : BY249—300 and BY249—600.

HFA16TB60

Abstract: HFA20TB120 FA08TB60 hfa16tb60c HFA15TB60 Telex-95219
Contextual Info: International [ « ] Rectifier i r ylPPUCKTION NOTES PUBLISHED BY INTERNATIONAL RECTIFIER. 233 KANSAS STREET. EL SEGUNDO. CA 90245 310 322-3331 AN-993 Utilizing HEXFRED Ultra-Fast Recovery Diode Die In Assembly (HEXFRED is a trademark of International Rectifier)

19tq15

Abstract: 42ctq30 IR42CTQ30 47CTQ20 IR42CTQ20 30L20 30L30 40L15 ir19 IR40L15
Contextual Info: Efficiency in SMPS Output Stage December 30th, 1999 Alberto Guerra & Francesco Vallone Department of Input/Output Rectifier International Rectifier, 1521 Grand, El Segundo 90245, California, U.S.A. Abstract. By means of the SPICE Schottky diode model, developed recently by International

Contextual Info: For partial switching PFC Integrated IGBT and Diode Bridge Rectifier SLA5222 Features Package  SLA5222 incorporates IGBT and diodes for bridge rectifier of partial switching PFC, and achieves board space reduction.  Low Saturation Voltage IGBT  Low VF Diode Bridge Rectifier

BYX99-300

Contextual Info: BYX99 SERIES _ RECTIFIER DIODES Silicon rectifier diodes in DO -4 metal envelopes, intended for use in power rectifier applications. The series consists of the following types: Normal polarity cathode to stud : B Y X 9 9 -3 0 0 t o 1200.

byx25

Abstract: diode BYX25 600
Contextual Info: BYX25 SERIES CONTROLLED AVALANCHE RECTIFIER DIODES Diffused silicon diodes in DO—4 metal envelopes, capable of absorbing transients and intended for power rectifier applications. The series consists of the following types: Normal polarity cathode to stud : BYX25—600 to BYX25—1400.

Contextual Info: BYX38 SERIES J V_ SILICON RECTIFIER DIODES Silicon rectifier diodes in DO-4 metal envelopes, intended for use in power rectifier applications. The series consists of the following types: Normal polarity cathode to stud : B Y X 3 8 -3 0 0 t o 1200.

RHRA1560CC

Abstract: RHRA1560CCTU HALF WAVE RECTIFIER hyperfast rectifier
Contextual Info: RHRA1560CC Hyperfast Rectifier tm Features 15A, 600V Hyperfast Rectifier • High Speed Switching trr < 35ns The RHRA1560CC is a hyperfast rectifier (trr<35ns) with soft recovery characteristics. It has half the recovery time of ultrafast diodes and is silicon nitride passivated ion-implanted epitaxial

BYX42-300

Abstract: Byx42 600 Philips BYX42 BYX42/300 BYX42-300R the value of BYX42
Contextual Info: BYX42 SERIES PHILIPS INTERNATIONAL 5bE D • 711DflEb D O m b E b ODI ■ PHIN T-Ô t~/7 SILICON RECTIFIER DIODES Diffused silicon rectifier diodes in DO-4 metal envelopes, intended for power rectifier applications. The series consists of the following types:

Contextual Info: Philips Semiconductors Product specification Rectifier diodes schottky barrier_ GENERAL DESCRIPTION Dual low leakage, platinum barrier, schottky rectifier diodes in a full pack plastic envelope, featuring low forward voltage drop, absence of

Contextual Info: Philips Semiconductors Product specification Rectifier diodes ,\ . schottky barrier_ GENERAL DESCRIPTION Dual low leakage, platinum barrier, schottky rectifier diodes in a full pack plastic envelope, featuring low forward voltage drop, absence of

Contextual Info: Philips Semiconductors Product specification Rectifier diodes schottky barrier_ GENERAL DESCRIPTION Dual, low leakage, platinum barrier, schottky rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored

Contextual Info: Philips Semiconductors Product specification Rectifier diodes schottky barrier_ GENERAL DESCRIPTION Low leakage, platinum barrier, schottky rectifier diodes in a full pack, plastic envelope featuring low forward voltage drop and absence of

F10H60S

Abstract: FFPF10H60S FFPF10H60STU
Contextual Info: FFPF10H60S Hyperfast 2 Rectifier tm Features 10A, 600V Hyperfast 2 Rectifier • High Speed Switching trr=25ns(Typ. @ IF=10A ) The FFPF10H60S is hyperfast2 rectifier (trr=25ns(Typ.) @ IF=10A). it has half the recovery time of ultrafast rectifier and is

Contextual Info: FFPF10H60S Hyperfast 2 Rectifier tm Features 10A, 600V Hyperfast 2 Rectifier • High Speed Switching trr=25ns(Typ. @ IF=10A ) The FFPF10H60S is hyperfast2 rectifier (trr=25ns(Typ.) @ IF=10A). it has half the recovery time of ultrafast rectifier and is

BY249-600R

Abstract: BY249 BY249-300 BY249-300R BY249-600
Contextual Info: N AMER PHILIPS/DISCRETE 25E D • bbS3T31 G022317 7 ■ BY249 SERIES A ~Q /-/7 SILICON RECTIFIER DIODES Glass-passivated double-diffused rectifier diodes in T 0 -2 2 0 plastic envelopes, intended fo r power rectifier applications. The series consists of the following types:

BYX99-300

Abstract: BYX99-300R byx99
Contextual Info: BYX99 SERIES T-os-ir PHILIPS INTERNATIONAL 7110fl2b DDmtiTG i n SbE D •PHIN RECTIFIER DIODES Silicon rectifier diodes in DO-4 metal envelopes, intended for use in power rectifier applications. The series consists of the following types: Normal polarity cathode to stud ; BYX99-300 to 1200.

BYX52-300R

Abstract: BYX52 international rectifier 639 BYX52-300
Contextual Info: BYX52 SERIES MAINTENANCE TYPE SbE D PHILIPS INTERNATIONAL • 711002b DD41b42 254 • P H I N — t -û i - 1 RECTIFIER DIODES Silicon rectifier diodes in DO-5 metal envelopes, intended for use in power rectifier applications. The series consists of the following types:

BYX98

Abstract: BYX98-300R T-Oi-17 BYX98-300
Contextual Info: BYX98 SERIES T - O l- I T PHILIPS INTERNATIONAL IPHIN TllDÖEb GQMlfcibM T1S 5bE D RECTIFIER DIODES Silicon rectifier diodes in DO-4 metal envelopes, intended for use in power rectifier applications. The series consists of the following types: Normal polarity cathode to stud : BYX98-300to 1200.