OF SD-50 DIODE Search Results

zener 245

Abstract: 1N2828B 1N4557B JANTX 245 zener 5W zener diode ana 650 zener diode IN 825 1N2812B 1N2815B 1N2817B
Contextual Info: Microsemi Corp. $ The diorie experts i SC O T T SD A L E , A Z For more information call: SANTA A N A, CA 1N2804 thru 1N2846B and 1N4557B thru 1N4564B 602 941-6300 FEATURES SILICON 50 WATT ZEN ER DIODES • ZENER VOLTAGE 3.9V to 200V . AVAILABLE IN TOLERANCES OF ± 5 % , ± 1 0 % and ± 2 0 %

2805B

Abstract: JN28
Contextual Info: M ierosem i Corp. y The dioOe experts Ì SC O T T SD A L E , A Z SANTA A N A , CA 1N 2804 thru 1N 2846B and 1N 4 5 57 B thru 1N 4564B hor more information call: 602 941-6300 FEATURES . SILICON 50 WATT ZENER DIODES ZENER VOLTAGE 3 .9V to 200 V • A V A ILA B LE IN TOLERANCES OF ± 5 % , ± 1 0 % and ± 2 0 %

RUN13

Abstract: zener diode 7.6v
Contextual Info: Data Sheet PD No. 60179-F IR21571 S FULLY INTEGRATED BALLAST CONTROL IC Features • Thermal overload protection • Programmable deadtime • Integrated 600V level-shifting gate driver • Internal 15.6V zener clamp diode on VCC • Micropower startup (150uA)

213E

Abstract: IR21571 MS-012AC transistor ignition
Contextual Info: Data Sheet PD No. 60179-H IR21571 S FULLY INTEGRATED BALLAST CONTROL IC Features • Thermal overload protection • Programmable deadtime • Integrated 600V level-shifting gate driver • Internal 15.6V zener clamp diode on VCC • Micropower startup (150uA)

Contextual Info: Bulletin I2091 rev. B 04/00 SD1553C.K SERIES Hockey Puk Version FAST RECOVERY DIODES Features 1825A 1650A High power FAST recovery diode series 2.0 to 3.0 µs recovery time High voltage ratings up to 3000V High current capability Optimized turn on and turn off characteristics

sd101

Abstract: LL101A
Contextual Info: SDIOIA 1N6263 . SDIOIC, SD101AW . SD101CW Silicon Schottky Barrier Diodes for general purpose applications. The LL101 series is a metal-on-silicon Schottky barrier device which is protected by a PN junction guard ring. The low forward voltage drop and fast switching make it ideal for

SD card footprint PCB

Abstract: IP4350CX24 wlcsp inspection
Contextual Info: IP4350CX24 9-channel SD memory card interface ESD protection filter to IEC 61000-4-2 level 4 Rev. 01 — 5 February 2010 Product data sheet 1. Product profile 1.1 General description The IP4350CX24 is a diode array designed to provide protection to downstream

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS100S12N3T4_B11 MIPAQ sense Modul in Sixpack-Konfiguration mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand mit integriertem Σ/∆-Wandler und galvanisch getrennter digitalen Schnittstelle

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS75S12N3T4_B11 MIPAQ sense Modul in Sixpack-Konfiguration mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand mit integriertem Σ/∆-Wandler und galvanisch getrennter digitalen Schnittstelle

S20K

Abstract: SD1553C DO-200AC
Contextual Info: Bulletin I2091 rev. B 04/00 SD1553C.K SERIES Hockey Puk Version FAST RECOVERY DIODES Features 1825A 1650A High power FAST recovery diode series 2.0 to 3.0 µs recovery time High voltage ratings up to 3000V High current capability Optimized turn on and turn off characteristics

IFS100S12N3T4_B11

Abstract: solar inverters circuit diagram IEC61800-5-1
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules IFS100S12N3T4_B11 MIPAQ sense Modul in Sixpack-Konfiguration mit Trench/Feldstopp IGBT4, Emitter Controlled 4 Diode und Strommesswiderstand mit integriertem Σ/∆-Wandler und galvanisch getrennter digitalen Schnittstelle

Contextual Info: SD1553C.K Series Vishay High Power Products Fast Recovery Diodes Hockey PUK Version , 1650/1825 A FEATURES • • • • • • • • • • • DO-200AC (K-PUK) PRODUCT SUMMARY IF(AV) High power FAST recovery diode series 2.0 to 3.0 µs recovery time

Contextual Info: SY88232L/AL 2.5Gbps Laser Diode Driver with Integrated Limiting Amplifier General Description Features The SY88232L is a single supply 3.3V integrated laser driver and post amplifier for telecom/datacom applications with data rates from 155Mbps up to 2.5Gbps. The driver

213E

Abstract: IR21571 MS-012AC
Contextual Info: Data Sheet PD No. 60179-G IR21571 S FULLY INTEGRATED BALLAST CONTROL IC Features • Thermal overload protection • Programmable deadtime • Integrated 600V level-shifting gate driver • Internal 15.6V zener clamp diode on VCC • Micropower startup (150uA)

S20K

Abstract: SD1553C
Contextual Info: Bulletin I2091 rev. B 04/00 SD1553C.K SERIES Hockey Puk Version FAST RECOVERY DIODES Features 1825A 1650A High power FAST recovery diode series 2.0 to 3.0 µs recovery time High voltage ratings up to 3000V High current capability Optimized turn on and turn off characteristics

DO-200

Contextual Info: SD1553C.K Series Vishay Semiconductors Fast Recovery Diodes Hockey PUK Version , 1650/1825 A FEATURES • • • • • • • • • • • DO-200AC (K-PUK) PRODUCT SUMMARY IF(AV) High power FAST recovery diode series 2.0 to 3.0 µs recovery time High voltage ratings up to 3000 V

igbt ignition

Abstract: IR21571 IR21571PBF ignition IGBTS C 12 PH zener diode datasheet diode led uv electronic ballast ignition timing IRF 450 MOSFET Sd pcb
Contextual Info: Data Sheet PD No. 60179 revM Not recommended for new design: please use IRS21571D IR21571 S & (PbF) FULLY INTEGRATED BALLAST CONTROL IC Features • Thermal overload protection • Programmable deadtime • Integrated 600V level-shifting gate driver • Internal 15.6V zener clamp diode on VCC

Contextual Info: Data Sheet PD No. 60179 revM Not recommended for new design: please use IRS21571D IR21571 S & (PbF) FULLY INTEGRATED BALLAST CONTROL IC Features • Thermal overload protection • Programmable deadtime • Integrated 600V level-shifting gate driver • Internal 15.6V zener clamp diode on VCC

C 13 PH Zener diode

Abstract: 213E IR21571 IR21571S MS-012AC
Contextual Info: Data Sheet PD No. 60179 revL IR21571 S & (PbF) FULLY INTEGRATED BALLAST CONTROL IC Features • Thermal overload protection • Programmable deadtime • Integrated 600V level-shifting gate driver • Internal 15.6V zener clamp diode on VCC • Micropower startup (150uA)

213E

Abstract: IR21571 MS-012AC 4.7E T-Flip-Flop
Contextual Info: Data Sheet PD No. 60179-I IR21571 S FULLY INTEGRATED BALLAST CONTROL IC Features • Thermal overload protection • Programmable deadtime • Integrated 600V level-shifting gate driver • Internal 15.6V zener clamp diode on VCC • Micropower startup (150uA)

zener diode ph 48

Contextual Info: Data Sheet PD No. 60179 revK IR21571 S & (PbF) FULLY INTEGRATED BALLAST CONTROL IC Features • Thermal overload protection • Programmable deadtime • Integrated 600V level-shifting gate driver • Internal 15.6V zener clamp diode on VCC • Micropower startup (150uA)

Contextual Info: SD1553C.K Series Vishay High Power Products Fast Recovery Diodes Hockey PUK Version , 1650/1825 A FEATURES • • • • • • • • • • • DO-200AC (K-PUK) PRODUCT SUMMARY IF(AV) High power FAST recovery diode series 2.0 to 3.0 µs recovery time

s20k 250

Abstract: S20K SD1553C DO-200AC
Contextual Info: SD1553C.K Series Vishay High Power Products Fast Recovery Diodes Hockey PUK Version , 1650/1825 A FEATURES • • • • • • • • • • • DO-200AC (K-PUK) PRODUCT SUMMARY IF(AV) High power FAST recovery diode series 2.0 to 3.0 µs recovery time

SiP41101

Abstract: SiP41101DB SiP41101DQ-T1 TSSOP-16
Contextual Info: SiP41101 New Product Vishay Siliconix Half-Bridge N-Channel MOSFET Driver With Break-Before-Make FEATURES D D D D D D D APPLICATIONS 5-V Gate Drive Undervoltage Lockout Sub 1-W Gate Drivers Internal Bootstrap Diode Drive MOSFETs In 4.5- to 30-V Systems Switching Frequency: 250 kHz to 1 MHz