OH MARKING DIODE Search Results

j172

Abstract: D1NJ10 AX057
Contextual Info: Schottky Barrier Diode Axial Diode W D 1 N J 10 t m O U T L IN E Package : AX057 unit:mm W eight 0.19g Typ t— in o *1 100V 1A 3- Feature UJ • Tj=150°C • Tj=150°C * 2 • f i l R = 0 .1 m A • Low lR=0.1mA • Resistance for thermal run-away (!>

1N6688

Abstract: 1N6689 MIL-STD-129 1N6689US
Contextual Info: The documentation process conversion measures necessary to comply with this revision shall be completed by 25 September 1997 INCH POUND MIL-PRF-19500/627A 25 June 1997 SUPERSEDING MIL-S-19500/627 18 November 1994 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, POWER RECTIFIER,

SL5010

Abstract: SL5010P piezo ceramic transducer piezoceramic
Contextual Info: SL5010P Semiconductor TONE RINGER WITH BRIDGE DIODE Description The SL5010P is a bipolar IC designed to replace the mechanical bell in telephone sets. It generates two analog tones, and a warble frequency to drive either directly a piezo-ceramic transducer or a small loudspeaker in response to ringing signal on the telephone line.

Trr-35nS

Abstract: MARKING JM S3L20U DIODE 3LU fly wheel S3L20 diode super fast marking code TS trr35ns diode marking code UH
Contextual Info: Super Fast Recovery Diode Axial Diode OUTLINE S3L20U U n it : m m Package : AX14 W e ig h t l.O Ó R ÍT y p 200V 3A Feature 26.5 • s v -rx • Low Noise • trr=35ns • tnr=35ns MA N Main Use * KtflliAiKliSM Marking • Switching Regulator • 7 5 'T /n - J b

S2L60

Abstract: loa marking code
Contextual Info: Super Fast Recovery Diode Axial Diode OUTLINE S2L60 Unit : mm Package : AX10 W eight O .ffig iT y p 6 0 0 V 1 .5A Feature 26.5 • r a M ± FRD • High Voltage Super FRD • ñ S 'íX • Low Noise • trr=50ns • trr=50ns .1 cR4 26.5 -O . - 2 - * ftm iiA iK m

J533

Abstract: S3L60 fly wheel J533-1
Contextual Info: Super Fast Recovery Diode Axial Diode OUTLINE S3L60 Unit : mm Package : AX14 W eight l.OÓRÍTyp 6 0 0 V 2 .2 A Feature 26.5 • r a M ± FRD • High Voltage Super FRD •ñ S 'í X • Low Noise • trr=50ns • trr=50ns MA 26.5 -L i. N * KtflliAiKliSM

Contextual Info: T O SH IB A 16DL2CZ47A, 16FL2CZ47A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 16DL2CZ47A, 16FL2CZ47A SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • • • • Repetitive Peak Reverse Voltage Average Output Rectified Current

Contextual Info: LESHAN RADIO COMPANY, LTD. Zener Voltage Regulator Diodes 225 mW SOT-23 Surface Mount LBZX84C2V4LT1 Series FEATURE ƽMaximum case temperature for 3 soldering purposes: 260°C for 10 seconds ƽPb-Free package is available. 1 2 ORDERING INFORMATION Package Shipping

2LU 07

Contextual Info: Super Fast Recovery Diode Axial Diode OUTLINE M im S2L20U Unit ! mm Package : AX10 Weight 0.65« T yp 2 0 0 V 1.5A Feature 26.5 • trr=35ns • Low Noise • trr=35ns • OA, • ifflÄ. FA • • • • 26.5 -L -J O . U> M <b\A 2 * t a ® * '« « »

DIODE 20FL2C

Contextual Info: TOSHIBA 20DL2C48A,U20DL2C48A,20FL2C48A,U20FL2C48A TOSHIBA HIGH EFFICIENCY DIODE STACK HED SILICON EPITAXIAL TYPE 20DL2C48A, U20DL2C48A, 20FL2C48A, U20FL2C48A SWITCHING TYPE POWER SUPPLY APPLICATION CONVERTER & CHOPPER APPLICATION • • • • Repetitive Peak Reverse Voltage : V r r m = 200, 300V

1N5466B JANTXV

Abstract: 1N5466B JANTX 1N5472B+JAN 1N5469B 1N5476B 1N5461B 1N5461C 1N5462B 1N5476C b-210-51
Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 28 September 1999 INCH-POUND MIL-PRF-19500/436A 28 June 1999 SUPERSEDING MIL-S-19500/436 USAF 28 August 1970 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, VOLTAGE-VARIABLE CAPACITOR

DIODE s3l 400v

Abstract: diode S3L 13 DIODE s3l 9d marking code 9d S3L40 DIODE S3l
Contextual Info: Super Fast Recovery Diode Axial Diode Wtm OUTLINE Package : AX14 S3L40 Unit-mm Weight 1.06g Typ 400V 3A 26.5 26.5 Feature • m s 'i x • L o w N oise • trr=50ns • trr= 5 0 n s iT > Main Use * J S fU B M W Marking • S w itc h in g R eg u lator •flft

Contextual Info: Schottky Barrier Diode Single Diode M1FH3 30V 1.5A Feature • Small SMD • Super-Low Vf=0.36V • * * S f i V F = 0 .3 6 V Main Use • Reverse connect protection for DC power source • DC/DC Converter • Mobile phone, PC • K y ÿ !L -iîÊ fê B 5 ±

v174

Abstract: KDV174
Contextual Info: SEMICONDUCTOR TECHNICAL DATA KDV174 SILICON EPITAXIAL PIN DIODE VHF —UHF BAND RF ATTENUATOR APPLICATION. AGC FOR AM/FM TUNER. FEATURES • Low Capacitance : Cr=0.25[pF] TYP. . • Low Series Resistance : rs=7[ß] (TYP.). • Designed for Low Inter Modulation.

1N1149

Abstract: 1N1149 JAN 1N1147 1N1147 JAN
Contextual Info: INCH-POUND MIL-S-19500/254B 21 March 2005 SUPERSEDING MIL-S-19500/254A EL 6 February 1968 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, TYPES 1N1147 AND 1N1149, JAN Inactive for new design after 7 June 1999. This specification is approved for use by all Departments

IR LFN

Abstract: D1FK70 smd diode ss 501 SMD MARKING LFN ir smd m7 diode super fast diode smd marking "OA" smd diode 1f diode smd marking VD
Contextual Info: Super Fast Recovery Diode Single Diode m tm m D1FK70 o u tlin e 700V 0.8A Feature • • • • • /JvS JS M D • S iS Œ • Vrm =700V Small SMD High Voltage Low Noise Vrm=700V Main Use • DC/D C o y it—9 • iS Iâ .F A lÆ f ê S • • • •

KIA2431

Abstract: TSM 1250
Contextual Info: SEMICONDUCTOR KIA2431P/S/T/AP/AS TECHNICAL DATA /AT/BP/BS/BT BIPOLAR LINEAR INTEGRATED CIRCUIT PROGRAMMABLE PRECISION REFERENCES T he KIA2431P/S/T/AP/AS/AT/BP/BS/BT are integrated circuits are three-terminal programmable shunt regulator diodes. These monolithic IC voltage reference operate as a low temperature

Contextual Info: Super Fast Recovery Diode Single Diode m tm m o u tlin e Package I 1F D1FL20U Unit I mm Weight 0.058g Typ *7 -K v -? 200V 1.1 A Feature *<D • Small SMD • Low Noise • trr-35ns • /J ^ S M D • e y - r x • trr=35ns Main Use • D C / D C n y J Ï- i ?

smd diode marking UJ

Abstract: smd marking KD smd marking diode KD smd diode marking code UJ SMD MARKING CODE vk D1FL40
Contextual Info: Super Fast Recovery Diode Single Diode mtmm o u tlin e Package I 1F D1 F L 40 Unit I mm Weight 0.058g Typ A 7 -K -7 -* 400V 0.8A Feature •e y -rx • Small SMD • Low Noise • trr=50ns • trr-5 0ns • /J^ S M D (D°— N — ”<& Main Use • • •

Diode smd code H8

Abstract: smd diode marking U1 SMD MARKING 7G max8022
Contextual Info: Single Diode M1FH3 Schottky Barrier Diode mtmm o u t l i n e W eight 0.027tf Typ 30V 1.5A ij'/—K v —? C a th o d e m a rk Feature • 'JvS S M D • S V f=0.36V U nit I mm Package : M1F | h 92 —*<2) • Small SMD • Super-Low Vf=0.36V x i z z h t iv m i

smd code 2AT

Abstract: D1FL20U smd code marking 1F marking code 2At marking LZ smd diode SMD MARKING CODE ju SMD MARKING CODE vk fly wheel smd regulator marking VA D1FL20
Contextual Info: Super Fast Recovery Diode Single Diode m tm m o u tlin e Package I 1F D1FL20U Unit I mm Weight 0.058g Typ *7 -K v -? 200V 1.1 A Feature *<D • Small SMD • Low Noise • trr-35ns • /J ^ S M D • e y - r x • trr=35ns Main Use • D C / D C n y J Ï- i ?

SMD MARKING CODE tvw

Abstract: D1FJ4 JILI T-30 SMD MARKING CODE vk smd code marking 1F
Contextual Info: Schottky Barrier Diode Single Diode m tm m o u tlin e Package : 1F D1FJ4 U nit I mm Weight 0.058k T yp ii'/—y-?—? 40V 2A Feature • /JvgaSMD QC"—M— • Small SMD • Low lR=0.2mA • Resistance for thermal run-away • lR=0.2mA Main Use • D C /D C D > A -ÿ

TLP521

Abstract: TLP521-1 toshiba TLP521-4 Toshiba tlP521 Photocoupler TLP521-1GB TLP521-2 gr TLP521 8 TLP521 gr tlp521 Photocoupler DIODE 2nu
Contextual Info: TO SH IBA TLP521-1,TLP521-2,TLP521-4 TOSHIBA PHOTOCOUPLER GaAs IRED & PHOTO-TRANSISTOR TLP521-1, TLP521-2, TLP521-4 PROGRAMMABLE CONTROLLERS AC/DC-INPUT MODULE SOLID STATE RELAY The TOSHIBA TLP521-1, -2 and -4 consist of a photo-transistor optically coupled to a gallium arsenide infrared emitting diode.

Zener diode smd marking S4

Abstract: DIAC DB2 melf ZENER diode COLOR BAND gps 1575R melf ZENER diode COLOR CODE LTWC455E zener smd marking 931 1575R SR360* EQUIVALENT Tuning Fork Crystal 40khz
Contextual Info: . COMPANY PROFILE Shenzhen Luguang Electronic Technology CO.,LTD.is a high-tech enterprise,which is specializing in R&D,manufacturing,and selling of various piezoelectric materials,piezoelectric frequency components, diodes,transistors,modules,digital television receivers,wireless controllers,etc.