OM SOT23-5 IC Search Results

Contextual Info: ykiyjxivki 19-1225; Rev 0; 4/97 H i g h - V o l t a g e , L o w - P o w er L i n e a r R e g u l a t o r for N o te b o o k C om p u ters _F e a t u r e s The MAX1615 is a micropower, SOT23-5 linear regula­ tor that supplies always-on, keep-alive power to CMOS

sot143 marking code A5

Abstract: smd code marking 05 sot143 MARKING CODE 3fi marking code FV marking 2n sot23 SMD MARKING CODE LAM smd code marking 3A sot23 marking code LE SOT 23 a51 SOT23
Contextual Info: SMD TRIGGER DEVICES PNPN DESCRIPTION • P h ilip s C om ponents trigger devices are p la n ar P-N-P-N devices w h ich can be used as program m able u n iju n c tio n tra n s is to rs (PU T s) o r silicon co n tro lled sw itch es to sw itch relay an d lam p drivers, sen se te m p e ra tu re changes, and

aanr

Contextual Info: SOT-23 PIN Diodes Features • SURFACE MOUNT PACKAGE ■ LOW CAPACITANCE DIODES ■ LOW LOSS SWITCH DIODES ■ LOW DISTORTION ATTENUATOR DIODES ■ FAST SWITCHING DIODES ■ SINGLE AND DUAL DIODE CONFIGURATIONS ■ TAPE AND REEL PACKAGING AVAILABLE The SOT-23 is a w idely used low cost sem iconductor

marking code WM sot23

Contextual Info: MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBT3904 Features x Halogen free available upon request by adding suffix "-HF" • Capable of 350mWatts of Power Dissipation and 200mA Ic.

Contextual Info: Sensing and Control SM351LT Home : Products : Sensors : Magnetic Sensors : 1st Level Magnetoresistive Sensors : Nanopow er Nanopow e r Serie s , om nipolar m agnetore s is tive s e nsor IC, high s e nsitivity (7 G typ.), SOT-23, 3000 units /tape and 178 m m [7 in] re e l

lf 3814

Abstract: HSMP4810 HSMP-3800 D323GB90VI HSMP-3820 HSMP-381X HSMP-382X HSMP-386X MARKING CODE MP SOT23 HSMP-389X
Contextual Info: T hat mL'nM HEW LETT P a c k a rd Surface M ount PIN D iodes Technical Data HSMP-38XX and HSMP-48XX S eries F ea tu res • D io d es O ptim ized for: Low C urrent Switching Low D istortion Attenuating Ultra-Low Distortion Switching M icrowave Frequency O peration

AX995

Abstract: mark EA SOT23-5 AX 995 Nippon capacitors
Contextual Info: 19-1266; Rev Ob, 7/97 >M y3XlvVi High-Spaad, R Seranoim r, Low -Voltage, SOT23, R ail-to-R ail I/O C o m p arait* The com m on-m ode input voltage range extends 250mV beyond the supply rails. Input bias current is typically 1,0pA , and in p u t o ffs e t v o lta g e is ty p ic a lly 0.5m V.

st smd diode marking code VU

Abstract: SMD diode sg 46 sot23 smd code ng AVN marking SMD smd code marking PE sot23
Contextual Info: DISCRETE SEMICONDUCTORS Product specification Supersedes data of 1997 Oct 24 Philips Sem iconductors 1999 Apr 28 PHILIPS Philips Semiconductors Product specification Schottky barrier double diodes FEATURES BAS40 series PINNING SOT23 (see Fig. 1a) • Low forward voltage

2N2369 SOT-23

Abstract: BAW66 diode marking w8 BZX88-C7V5 BAW* diode W6 marking sot-23 baw 92 Z6 DIODE BZX88C8V2 BAW63A
Contextual Info: SWITCHING DIODES TABLE 2 - SILICON PLANAR EPITAXIAL HIGH SPEED SWITCHING DIODES The BAV and BAW series of micro-miniature plastic encapsulated single diode and double diode pairs are primarily intended for use in thick and thin film hybrid circuits. Application areas include fast

Unipolar

Abstract: Tsh282cx tsh282
Contextual Info: TSH282 Sensitivity Unipolar Hall Effect Switch TO-92S Pin Definition: 1. VCC 2. GND 3. Output SOT-23 Pin Definition: 1. VCC 2. Output 3. GND Description TSH282 is an unipolar Hall effect sensor IC. It incorporates advanced chopper stabilization technology to provide

Contextual Info: Fairchild s e m ic o n d u c to r D¡screte p o w er an j signal Technologies Selection Guides Schottky Diodes Schottky D io des Part Number Remarks B AT54 S in g le BAT54A CA B A T 5 4C CC B AT54S i S e rie s MM InA Max 2000 20Q0 2M# m m Mlax , t 1 t ,. t

tcxo philips 4322

Abstract: philips tcxo 4322 190 ISO9001-Certified philips bfq32 philips bare die datasheet 2SK170BL ON4749 philips BFG196 S8740230 toshiba fet databook 2sk162 hitachi
Contextual Info: RF Manual 5th edition Product and design manual for RF Products October 2004 Semiconductors RF Manual Philips Semiconductors 5th edition Product and design manual for RF Products  Koninklijke Philips Electronics N.V. 2004 All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The

JY 222 M capacitor

Contextual Info: Find It By Series m in iR te l i niniB ag B/•Swail.N Surface M ount D escription P age N u m b er Q u ick V iew U s s is s s 6 0 0 -6 1 1206 to 1806 ^ eedthl" C apacitor 32 602 603 605 606 607 608 609 612 613 615 616 620 621 622 402 403 405 406 407 408

Contextual Info: FM M T493A SOT23 60V NPN SILICON PLANAR M EDIUM POWER PLANAR TRANSISTOR NPN: V CEO = 60V, IC = 1A, VCE SAT = 0.5V @1A E C Description: Th i s 60V N PN t r an si st o r p r o v i d es u ser s w i t h perform ance com bining low saturation and high h FE w ith a continuous current capability of 1A, ensuring

LX5501BSE

Abstract: RF TRANSISTOR SOT23 5 RF amplifier SOT23 5 HBT sot-23
Contextual Info: LX5501B InGAP HBT Gain Block TM P RODUCTION D ATA S HEET The LX5501B is a low cost, broadband RFIC amplifier that has been manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor HBT process (MOCVD). Designed as an easily cascadable 50ohm internally matched gain block, the

Contextual Info: LX5501B InGAP HBT Gain Block TM P RELIMINARY D ATA S HEET The LX5501B is a low cost, broadband RFIC amplifier that has been manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor HBT process (MOCVD). Designed as an easily cascadable 50ohm internally matched gain block, the

Contextual Info: FAIRCHILD S E M IC O N D U C T O R DISCRETE POWER AND SIGNAL TECHNOLOGIES BZX84C3V3 tm 5 % TOLERANCE Absolute Maximum Ratings note 1 TA = 25°C unless otherwise noted Parameter Value S torage T e m p e rature Units °c °c -55 to +150 M axim um Junction T em p e rature

Contextual Info: FAIRCHILD S E M IC O N D U C T O R DISCRETE POWER AND SIGNAL TECHNOLOGIES BZX84C33 tm 5% TOLERANCE Absolute Maximum Ratings note 1 TA = 25°C unless otherwise noted Parameter Value S torage T e m p e rature Units °c °c -55 to +150 M axim um Junction T em p e rature

FAIRCHILD SOT-23

Contextual Info: FAIRCHILD S E M IC O N D U C T O R DISCRETE POWER AND SIGNAL TECHNOLOGIES BZX84C30 tm 5% TOLERANCE Absolute Maximum Ratings note 1 TA = 25°C unless otherwise noted Parameter Value S torage T e m p e rature Units °c °c -55 to +150 M axim um Junction T em p e rature

Contextual Info: FAIRCHILD S E M IC O N D U C T O R DISCRETE POWER AND SIGNAL TECHNOLOGIES BZX84C27 tm 5% TOLERANCE Absolute Maximum Ratings note 1 TA = 25°C unless otherwise noted Parameter Value S torage T e m p e rature Units °c °c -55 to +150 M axim um Junction T em p e rature

flash memory 5v 32m

Abstract: rom 1K x 8 wram samsung Sun Ultra AX AL001 spd65 ksd 201
Contextual Info: ORDERING INFORMATION KSV 3100A Nl - B U R N -IN O P T IO N A L (SEE B U R N -IN PR O G R A M ) P A C K A G E TYP E (SEE E A C H SPEC O F D EVIC E) O P E R A T IN G T E M P IC 'S O N L Y B LA NK : S E E IN D IV ID U A L SPEC C : 0 - 7 0 °C I : - 4 0 - 8 5 °C

bf862

Contextual Info: DISCRETE SEMICONDUCTORS PÂTÂ SlnlEET BF862 N-channel junction FET Objective specification Philips Sem iconductors 1999 May 14 PHILIPS Philips Semiconductors Objective specification N-channel junction FET BF862 FEATURES PINNING SOT23 • High transition fre q u e n cy fo r excellent se n sitivity in

2SK170BL

Abstract: 2SK170GR 2SK163 BFG424F BFG480W 2sk162 hitachi BB155 2N4393 2SK508 2SK210GR
Contextual Info: RF マニュアル 第5版 RF 製品の製品およびデザインマニュアル 2004 年 10 月 Semiconductors RF マニュアル 第 5 版 Philips Semiconductors RF 製品の製品およびデザイン・マニュアル  Koninklijke Philips Electronics N.V. 2004

bzx84

Abstract: BZX84C2V4 Y6 70 ZENER DIODE diode ZENER y8 sot23 Y6 ZENER DIODE
Contextual Info: BZX84-C2V4 THRU BZX84-C75 Zener Diodes SOT-23 _ FEATURES .118 3 . 0 .016 ( 0 .4 ) ♦ Silicon Planar Power Zener Diodes ♦ The Zener voltages are graded accord­ ing to the international E 24 standard. Standard Zener voltage tolerance is ±5%. Replace “C” with “B” for ±2% tol­