ON 33A Search Results

Contextual Info: CEP6186/CEB6186 N-Channel Enhancement Mode Field Effect Transistor FEATURES 60V, 33A, RDS ON = 25mΩ @VGS = 10V. RDS(ON) = 32mΩ @VGS = 4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

Contextual Info: CED4311/CEU4311 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -33A, RDS ON = 18mΩ @VGS = -10V. RDS(ON) = 30mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

CEU4311

Contextual Info: CED4311/CEU4311 P-Channel Enhancement Mode Field Effect Transistor FEATURES -30V, -33A, RDS ON = 18mΩ @VGS = -10V. RDS(ON) = 30mΩ @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

208H

Abstract: 4R7K 390ad
Contextual Info: 1. M echanical D im ensions: 2. Sch em atic: 3. E lectrical Specification s: OCL: 4 .7 u H ± 1 0% @500KHz 0.1V DCR: 1.62m 0hm s Max Isat: 33Adc Based on 10% Typ Drop in OCL 36.9Adc (Based on 20% Typ Drop in OCL) 6.10 39.0Adc (Based on 30% Typ Drop in OCL)

CRC-10

Abstract: G723 G.711, G.723.1, G.726, G.728 AF-VTOA-0113 G.729 chip G.711 PCM64 map1 G-728 G.729D
Contextual Info: VoATM-VoIP Interworking on C-5. Architecture & Design Document VoATM-VoIP Interworking on C-5. Architecture & Design Document Version 1.0 Motorola India Electronics Pvt. Ltd . “The Senate” No. 33A, Ulsoor Road Bangalore - 560042 INDIA 2001 Motorola Inc.

versacon 9

Abstract: sdg-40 data sheet of 4033 spm-33A versacon PLCP-40 BAZ-33 ac adapter SPM-32A lnt 2
Contextual Info: ACTERNA TEST & MEASUREMENT SOLUTIONS SPM-32A/-33A/-34A/-35A/-36A Selective Level Meters Key Features • For line qualification tests on ISDN, PCM, xDSL, and measurements on analog transmission systems up to 3.5 MHz • Synthesizer for accurate, stable frequency settings

CEB6186

Contextual Info: CEP6186/CEB6186 N-Channel Enhancement Mode Field Effect Transistor PRELIMINARY FEATURES 60V, 33A, RDS ON = 23mΩ @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. D Lead free product is acquired.

AN7254

Abstract: AN7260 AN9321 AN9322 IRFP140N TB334 IRFP140NT
Contextual Info: IRFP140N Data Sheet January 2002 33A, 100V, 0.040 Ohm, N-Channel Power MOSFET Packaging Features JEDEC TO-247 SOURCE DRAIN GATE • Ultra Low On-Resistance - rDS ON = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

LA 47201

Abstract: 75631P AN7254 AN7260 AN9321 AN9322 HUF75631P3 HUF75631T TB334
Contextual Info: HUF75631P3 Data Sheet October 1999 File Number 4720.1 33A, 100V, 0.040 Ohm, N-Channel, UltraFET Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE HUF75631P3 • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models

U3303

Abstract: AN-994 IRFR3303 *fr3303
Contextual Info: PD - 9.1642A IRFR/U3303 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount IRFR3303 Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 30V RDS(on) = 0.031Ω G ID = 33A… S Description

Contextual Info: PD - 96306 AUTOMOTIVE GRADE AUIRGP50B60PD1 WARP2 SERIES IGBT WITH ULTRAFAST SOFT RECOVERY DIODE VCES = 600V VCE on typ. = 2.00V @ VGE = 15V IC = 33A C Applications • Automotive HEV and EV • PFC and ZVS SMPS Circuits Equivalent MOSFET Parameters RCE(on) typ. = 61mΩ

U3303

Abstract: AN-994 IRFR3303 9164 fu120
Contextual Info: PD - 9.1642A IRFR/U3303 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount IRFR3303 Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 30V RDS(on) = 0.031Ω G ID = 33A… S Description

AN-994

Abstract: IRFR3303
Contextual Info: PD - 9.1642A IRFR/U3303 HEXFET Power MOSFET l l l l l l Ultra Low On-Resistance Surface Mount IRFR3303 Straight Lead (IRFU3033) Advanced Process Technology Fast Switching Fully Avalanche Rated D VDSS = 30V RDS(on) = 0.031Ω G ID = 33A… S Description

irf540n

Abstract: MOSFET IRF540n power 22E Datasheet IRF540n IRF540NT AN7254 AN7260 AN9321 AN9322 TB334
Contextual Info: IRF540N Data Sheet January 2002 33A, 100V, 0.040 Ohm, N-Channel, Power MOSFET Packaging Features JEDEC TO-220AB SOURCE DRAIN GATE DRAIN FLANGE IRF540N • Ultra Low On-Resistance - rDS(ON) = 0.040Ω, VGS = 10V • Simulation Models - Temperature Compensated PSPICE and SABER

IRFP250

Abstract: irfp250 applications irfp250 mosfet IRFP250 m
Contextual Info: IRFP250 N-CHANNEL 200V - 0.073Ω - 33A TO-247 PowerMesh II MOSFET TYPE IRFP250 VDSS RDS on ID 200V < 0.085Ω 33 A TYPICAL RDS(on) = 0.073Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMARK GATE CHARGE MINIMIZED • ■

XD 105 94V-0

Abstract: BFM 41A Zener diode smd marking code 39c transistor 1BW GENERAL SEMICONDUCTOR TVS CJ 53B 30 097 transistor 110 3CG
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

TRANSISTOR SMD MARKING CODE 1BW

Abstract: SmD TRANSISTOR 1bw transistor SMD 5BW TRANSISTOR SMD MARKING CODE 1AM 5bw smd smd code marking 5bw KL SN 102 94v-0 smd transistor marking 3bw smd transistor 1AM yx 801
Contextual Info: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book transient voltage suppressors vishay general semiconductor vse-db0002-0710 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents

L770-33AU

Contextual Info: epitex Opto-Device & Custom LED Φ3MOLD LED LAMP L770-33AU L770-33AU Infrared LED Lamp L770-33AU is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a spectral band of radiation, which peaks at 770nm. ♦Specifications

Contextual Info: High Power Infrared LED 700nm Lead(Pb)Free Product-RoHS Compliant L700-33AU Infrared LED Lamp L700-33AU is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a spectral band of radiation, which peaks at 700nm. Features

Contextual Info: epitex Opto-Device & Custom LED L720-33AU Φ3 MOLD LED LAMP L720-33AU Infrared LED Lamp L720-33AU is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a spectral band of radiation, which peaks at 720nm. ♦Specifications

Contextual Info: epitex Opto-Device & Custom LED L830-33AU Φ3 MOLD LED LAMP L830-33AU Infrared LED Lamp L830-33AU is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias, it emits a spectral band of radiation, which peaks at 830nm. ♦Specifications

Contextual Info: epitex Opto-Device & Custom LED L760-33AU Φ3 MOLD LED LAMP L760-33AU Infrared LED Lamp L760-33AU is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a spectral band of radiation, which peaks at 760nm. ♦Specifications

Contextual Info: epitex Opto-Device & Custom LED L735-33AU Φ3 MOLD LED LAMP L735-33AU Infrared LED Lamp L735-33AU is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a spectral band of radiation, which peaks at 735nm. ♦Specifications

Contextual Info: epitex Opto-Device & Custom LED L700-33AU Φ3 MOLD LED LAMP L700-33AU Infrared LED Lamp L700-33AU is an AlGaAs LED mounted on a lead frame with a clear epoxy lens. On forward bias it emits a spectral band of radiation, which peaks at 700nm. ♦Specifications