ON QG FET 6 PIN Search Results

Contextual Info: IRF7807VPbF-1 HEXFET Power MOSFET VDS 30 RDS on max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) V 25 mΩ 9.5 nC 8.3 A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 T o p V ie w Features Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques

MP6403

Contextual Info: TOSHIBA MP6403 TOSHIBA POWER MOS FET MODULE SILICON N & P CHANNEL MOS TYPE L2- tt-MOS1V 6 IN 1 M PfiAfl 3 HIGH POWER SWITCHING APPLICATION. 3-PHASE MOTOR DRIVE AND BIPOLAR DRIVE OF PULSE MOTOR. • • • • • • 4-Volt Gate Drive Available Small Package by Full Molding (SEP 12 Pin)

MP6404

Abstract: 2-32C1K
Contextual Info: MP6404 TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type L2-π-MOSV 6 in 1 MP6404 Industrial Applications High Power High Speed Switching Applications 3-Phase Motor Drive and Stepping Motor Drive Applications • 4 V gate drive • Small package by full molding (SIP 12 pin)

mp6404 A

Abstract: MP6404
Contextual Info: MP6404 TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type Six L2-π-MOSV inOne MP6404 Industrial Applications High Power High Speed Switching Applications 3-Phase Motor Drive and Stepping Motor Drive Applications • 4-V gate drivability • Small package by full molding (SIP 12 pins)

Contextual Info: MP6404 TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type L2-π-MOSV 6 in 1 MP6404 Industrial Applications High Power High Speed Switching Applications 3-Phase Motor Drive and Stepping Motor Drive Applications • 4 V gate drive · Small package by full molding (SIP 12 pin)

MP4212

Abstract: Pch MOS FET
Contextual Info: MP4212 TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type Four L2-π-MOSV in One MP4212 Industrial Applications High Power High Speed Switching Applications H-Switch Driver Unit: mm • 4-V gate drivability • Small package by full molding (SIP 10 pin)

Silicon NP Channel MOS FET High Speed Power Switching

Abstract: MP4212
Contextual Info: MP4212 TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type L2-π-MOSV 4 in 1 MP4212 Industrial Applications High Power High Speed Switching Applications H-Switch Driver • 4 V gate drive · Small package by full molding (SIP 10 pin) · High drain power dissipation (4 devices operation)

DIODE marking 7AA

Abstract: IRF7807PBF
Contextual Info: IRF7807PbF-1 IRF7807APbF-1 HEXFET Chip-Set for DC-DC Converters VDS RDS on max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 30 V 25 mΩ 12 nC 8.3 A A D S 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 T o p V ie w Features Benefits Industry-standard pinout SO-8 Package

MP4212

Abstract: Pch MOS FET mp42
Contextual Info: MP4212 Silicon N&P Channel MOS Type Four L2-π-MOSV in One TOSHIBA Power MOS FET Module MP4212 Industrial Applications High Power High Speed Switching Applications H-Switch Driver • • • • • • • Unit: mm 4-V gate drivability Small package by full molding (SIP 10 pin)

Contextual Info: MP4212 TOSHIBA Power MOS FET Module Silicon N&P Channel MOS Type Four L2-π-MOSV in One MP4212 Industrial Applications High Power High Speed Switching Applications H-Switch Driver • • • • • • • Unit: mm 4-V gate drivability Small package by full molding (SIP 10 pin)

Contextual Info: T O S H IB A MP4207 TOSHIBA PO W ER MOS FET MODULE SILICON N & P CHANNEL MOS TYPE L2-7r-MOSlV 4 IN 1 MP4207 INDUSTRIAL APPLICATIONS Unit in mm O HIGH PO W ER HIGH SPEED SWITCHING APPLICATIONS. O H-SW ITCH DRIVER • 4-Volt Gate Drive. • Small Package by Full Molding. (SIP 10 Pin)

PD-93839A

Abstract: FET MARKING QG 10BQ040 IRLR8103V IRLR8503
Contextual Info: PD-93839A IRLR8503 IRLR8503 • • • • N-Channel Application-Specific MOSFET Ideal for CPU Core DC-DC Converters Low Conduction Losses Minimizes Parallel MOSFETs for high current applications HEXFET MOSFET for DC-DC Converters D Description This new device employs advanced HEXFET Power

IRF FET

Abstract: FET MARKING QG MOSFET LOSSES SYNC BUCK fet data book free download 10BQ040 EIA-541 IRFR120 IRFU120 IRLR8103V IRLR8503
Contextual Info: PD- 95095A IRLR8503PbF IRLR8503PbF • • • • N-Channel Application-Specific MOSFET Ideal for CPU Core DC-DC Converters Low Conduction Losses Minimizes Parallel MOSFETs for high current applications • Lead-Free HEXFET MOSFET for DC-DC Converters D

P916A

Abstract: FET marking code FET MARKING QG
Contextual Info: PD- 95095 IRLR8503PbF IRLR8503PbF • • • • N-Channel Application-Specific MOSFET Ideal for CPU Core DC-DC Converters Low Conduction Losses Minimizes Parallel MOSFETs for high current applications • Lead-Free HEXFET MOSFET for DC-DC Converters D

FET MARKING CODE

Abstract: IRF FET 10BQ040 EIA-541 IRFR120 IRLR8103V IRLR8503 FET MARKING QG Junction P FET High Current Low Side Switch
Contextual Info: PD-93839C IRLR8503 IRLR8503 • • • • N-Channel Application-Specific MOSFET Ideal for CPU Core DC-DC Converters Low Conduction Losses Minimizes Parallel MOSFETs for high current applications HEXFET MOSFET for DC-DC Converters D • 100% RG Tested Description

10BQ040

Abstract: EIA-541 IRFR120 IRLR8103V IRLR8503
Contextual Info: PD-93839C IRLR8503 IRLR8503 • • • • N-Channel Application-Specific MOSFET Ideal for CPU Core DC-DC Converters Low Conduction Losses Minimizes Parallel MOSFETs for high current applications HEXFET MOSFET for DC-DC Converters D • 100% RG Tested Description

FET MARKING QG

Abstract: IRF7901D1 FET MARKING
Contextual Info: PD- 93844B IRF7901D1 • Co-Pack Dual N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Buck DC-DC Converters Up to 5A Peak Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier Q1 S ource Q1 Gate

Contextual Info: PD - 93844B IRF7901D1 Q1 S ource Q1 Gate 1 8 Pwr Vin 2 7 Pwr Vin PGND 3 6 Pwr Vout Q2 Gate 4 5 Pwr Vout Top View www.irf.com 1 9/19/01 PD - 93844A IRF7901D1 • Co-Packaged Dual N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Buck dc-dc

IRF7811AVTRPBF

Contextual Info: IRF7811AVPbF-1 HEXFET Power MOSFET VDS 30 RDS on max (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) V 14 mΩ 17 nC 10.8 A Base Part Number Package Type IRF7811AVPbF-1 SO-8 1 8 S 2 7 D S 3 6 D G 4 5 D SO-8 Features Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques

Contextual Info: SENSITRON SEMICONDUCTOR 2N7336 TECHNICAL DATA DATA SHEET 692, REV. - HERMETIC POWER MOSFET COMBINATION N-CHANNEL / P-CHANNEL QUAD 2 EACH DESCRIPTION: 100 VOLT, 1.0 AMP, 0.70 OHM MOSFET IN A HERMETIC CERAMIC 14 PIN DIP. MAXIMUM RATINGS-N/P - CHANNEL RATING

MP6403

Abstract: n fet 60v 50a 2-32C1K 170m0
Contextual Info: TO SH IBA MP6403 TOSHIBA POWER MOS FET MODULE SILICON N & P CHANNEL MOS TYPE L2-tt-MOSIV 6 IN 1 MP6403 HIGH POWER SWITCHING APPLICATION. 3-PHASE MOTOR DRIVE AND BIPOLAR DRIVE OF PULSE MOTOR. • 4-V o lt Gate D rive A vailable • Sm all Package by F u ll Molding (S IP 12 Pin )

FET MARKING QG

Abstract: ON QG FET 6 PIN IRF7901D1
Contextual Info: PD - 93844A IRF7901D1 • Co-Packaged Dual N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Buck dc-dc converters up to 5A peak output • Low Conduction Losses • Low Switching Losses • Low VF Schottky Rectifier Dual FETKYTM

Contextual Info: IRF7809AVPbF-1 HEXFET Power MOSFET DEVICE CHARACTERISTICS… IRF7809AV RDS on 7.0mΩ QG 41nC Qsw 14nC Qoss 30nC 1 8 S 2 7 D S 3 6 D G 4 5 D Top View SO-8 Features A A D S Benefits Industry-standard pinout SO-8 Package Compatible with Existing Surface Mount Techniques

Contextual Info: IRF8910PbF-1 HEXFET Power MOSFET VDS 20 RDS on max V 13.4 (@VGS = 10V) mΩ RDS(on) max 18.3 (@VGS = 4.5V) Qg (typical) ID (@TA = 25°C) 7.4 nC 10 A S1 1 8 D1 G1 2 7 D1 S2 3 6 D2 G2 4 5 D2 SO-8 Top View Features Benefits Industry-standard pinout SO-8 Package