ON SEMICONDUCTOR MARKING 821 Search Results
ON SEMICONDUCTOR MARKING 821 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
ICL7667MTV/883B |
![]() |
ICL7667 - DRIVER, MOSFET, DUAL POWER - Dual marked (5962-8766001GC) |
![]() |
![]() |
|
ICL7667MJA/883B |
![]() |
ICL7667 - Buffer/Inverter Based MOSFET Driver, CMOS, CDIP8 - Dual marked (5962-8766001PA) |
![]() |
![]() |
|
54ABT245/BRA |
![]() |
54ABT245 - Bus Transceiver, ABT Series, 1-Func, 8-Bit, True Output, BICMOS, CDIP20 - Dual marked (5962-9214801QRA) |
![]() |
![]() |
|
54ABT245/B2A |
![]() |
54ABT245 - Bus Transceiver, ABT Series, 1-Func, 8-Bit, True Output, BICMOS, CQCC20 - Dual marked (5962-9214801Q2A) |
![]() |
![]() |
|
MRMS591P | Murata Manufacturing Co Ltd | Magnetic Sensor |
![]() |
ON SEMICONDUCTOR MARKING 821 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
CARSEM
Abstract: 821E
|
Original |
O-220 821E-04 CARSEM 821E | |
Ss 8210
Abstract: 045 83.2 TI YEAR OF MANUFACTURE toshiba ta 8210
|
OCR Scan |
||
marking code 2903
Abstract: 821-P 821P
|
Original |
821P-01 821P-03. marking code 2903 821-P 821P | |
821-P
Abstract: 821P
|
Original |
821P-01 821P-02. 821-P 821P | |
821E
Abstract: 821E-04
|
Original |
821E-01 821E-04. 821E 821E-04 | |
Contextual Info: BurrĆBrown Products from Texas Instruments DAC7821 DA C7 821 SBAS365B – OCTOBER 2005 – REVISED JULY 2007 12-Bit, Parallel Input, Multiplying Digital-to-Analog Converter FEATURES • • • • • • • • • • • • • • 2.5V to 5.5V Supply Operation |
Original |
DAC7821 SBAS365B 12-Bit, 10MHz 20-Lead 12-Bit | |
Contextual Info: ADS821 ADS 821 U SBAS040B – DECEMBER 1995 – REVISED FEBRUARY 2005 10-Bit, 40MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION ● ● ● ● ● The ADS821 is a low-power, monolithic 10-bit, 40MHz Analog-to-Digital A/D converter utilizing a small geometry CMOS |
Original |
ADS821 SBAS040B 10-Bit, 40MHz ADS821 10-bit 380mW | |
Contextual Info: 1SMA59xxBT3G Series, SZ1SMA59xxBT3G Series 1.5 Watt Plastic Surface Mount Zener Voltage Regulators http://onsemi.com This complete new line of 1.5 Watt Zener Diodes offers the following advantages. Features • Standard Zener Breakdown Voltage Range − 3.3 V to 68 V |
Original |
1SMA59xxBT3G SZ1SMA59xxBT3G SZ1SMA59xxBT3G 1SMA5913BT3/D | |
ON Semiconductor 831B
Abstract: 1SMA5923BT3G ON code 829B marking 817B 1SMA5913BT3G 1SMA5926BT3G 1SMA5939BT3G 1sma5914bt3g 831-B 1SMA5929BT3G
|
Original |
1SMA59xxBT3G SZ1SMA59xxBT3G AEC-Q101 1SMA5913BT3/D ON Semiconductor 831B 1SMA5923BT3G ON code 829B marking 817B 1SMA5913BT3G 1SMA5926BT3G 1SMA5939BT3G 1sma5914bt3g 831-B 1SMA5929BT3G | |
ON Semiconductor 831B
Abstract: 817b 822B SMA 831b Onsemi 1SMA5941B 814B ON code 829B 829B 834b 822B SMA ON
|
Original |
1SMA5913BT3 1SMA5913BT3/D ON Semiconductor 831B 817b 822B SMA 831b Onsemi 1SMA5941B 814B ON code 829B 829B 834b 822B SMA ON | |
marking 819B
Abstract: 816B 813b zener 819B 1SMA5913BT3 403D 814B 815B 817B 818B
|
Original |
1SMA5913BT3 1SMA5913BT3/D marking 819B 816B 813b zener 819B 403D 814B 815B 817B 818B | |
marking 819B
Abstract: ON Semiconductor 831B SZ1SMA5913BT3G SZ1SMA5935BT3G 823B SMA Marking 827B MARKING 818B marking 817B SZ1SMA5934BT3G l 0220 817b
|
Original |
1SMA59xxBT3 SZ1SMA59xxBT3G AEC-Q101 1SMA5913BT3/D marking 819B ON Semiconductor 831B SZ1SMA5913BT3G SZ1SMA5935BT3G 823B SMA Marking 827B MARKING 818B marking 817B SZ1SMA5934BT3G l 0220 817b | |
Contextual Info: FDMD82100 Dual N-Channel Power Trench MOSFET 100 V, 7 A, 19 mΩ Features General Description Max rDS on = 19 mΩ at VGS = 10 V, ID = 7 A This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance |
Original |
FDMD82100 | |
Contextual Info: FDMC86570L N-Channel Shielded Gate PowerTrench MOSFET 60 V, 56 A, 4.3 mΩ Features Shielded Gate MOSFET Technology General Description Max rDS on = 4.3 mΩ at VGS = 10 V, ID = 18 A Termination is Lead-free This N-Channel MOSFET is produced using Fairchild |
Original |
FDMC86570L | |
|
|||
marking 513 SOD-323
Abstract: transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256
|
Original |
DL126/D Nov-2001 r14525 DL126/D marking 513 SOD-323 transistor marking code SOT-23 2FX BC449 equivalent DTD113 BC548 hie hre hfe steel package MPSW45A replacement BC449A equivalent 2n4401 free transistor equivalent book power tmos BF256 | |
Contextual Info: FDMD82100L Dual N-Channel PowerTrench MOSFET 100 V, 24 A, 19.5 mΩ Features General Description Max rDS on = 19.5 mΩ at VGS = 10 V, ID = 7 A This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain |
Original |
FDMD82100L | |
CBF493S
Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
|
Original |
DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ | |
Contextual Info: FDMD82100L Dual N-Channel PowerTrench MOSFET 100 V, 24 A, 19.5 mΩ Features General Description Max rDS on = 19.5 mΩ at VGS = 10 V, ID = 7 A This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain |
Original |
FDMD82100L | |
AM0393-320R
Abstract: IPC-A-600E MIL-P-55110D MIL-P-55110-D PCB BOARD DIMENSION BY SMA CONNECT AN8020 casey C0603C104K4RAC HP6624A marking code C3 SMD ic
|
Original |
848AB AM0393-320R IPC-A-600E MIL-P-55110D MIL-P-55110-D PCB BOARD DIMENSION BY SMA CONNECT AN8020 casey C0603C104K4RAC HP6624A marking code C3 SMD ic | |
Contextual Info: XOCLCC6EVB Crystal Clock Oscillator Module Evaluation Board User's Manual for NBX Family in 6 Pin CLCC 5 mm x 7 mm Package http://onsemi.com EVAL BOARD USER’S MANUAL Generic Evaluation Board: XOCLCC6EVB Devices: NBXxxxx Description Evaluation Board Manual Document Features |
Original |
848AB EVBUM2076/D | |
sustain circuits for plasma tv
Abstract: sustain driver for plasma tv plasma display address electrode driving igbt for plasma tv circuit for driving address electrodes PDP igbt display plasma heat sink design guide, IGBT BD-2249 pdp driver plasma tv circuit diagram
|
Original |
||
NCV85085
Abstract: 821E NCV85083 NCV85085DWR2
|
Original |
NCV85085 NCV85085 NCV85083 r14525 NCV85085/D 821E NCV85085DWR2 | |
ON Semiconductor marking 821Contextual Info: SIEMENS BCR 583 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10ki2,R2=10kS2 Type Marking Ordering Code Pin Configuration BCR 583 XMs 1=B Q62702-C2385 Package 2=E 3=C SOT-23 Maximum Ratings |
OCR Scan |
10ki2 10kS2) Q62702-C2385 OT-23 III11 ON Semiconductor marking 821 | |
rca 3069
Abstract: 821E NCV85083 NCV85085 rca h 818
|
Original |
NCV85083 NCV85083 NCV85085 r14525 NCV85083/D rca 3069 821E rca h 818 |