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    ON SEMICONDUCTOR MARKING 821 Search Results

    ON SEMICONDUCTOR MARKING 821 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DS0026H/883 Rochester Electronics LLC DS0026 - CLOCK DRIVER, MOS - Dual marked (7800802GA) Visit Rochester Electronics LLC Buy
    ICL7667MTV/883B Rochester Electronics LLC ICL7667 - DRIVER, MOSFET, DUAL POWER - Dual marked (5962-8766001GC) Visit Rochester Electronics LLC Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    ON SEMICONDUCTOR MARKING 821 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    CARSEM

    Abstract: 821E
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−220 7−LEAD CASE 821E−04 ISSUE E DATE 16 SEP 2009 SCALE 1:1 E P 0.14 E/2 U D1 B A A M B A A1 M D CHAMFER OPTIONAL C L 7X b e SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES.


    Original     		PDF O-220 821E-04 CARSEM 821E

    marking code 2903

    Abstract: 821-P 821P
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 7 LEAD TO–220 CASE 821P–03 ISSUE B SCALE 1:1 C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. 821P-01 AND -02 OBSOLETE. NEW STANDARD IS 821P-03. A M N


    Original     		PDF 821P-01 821P-03. marking code 2903 821-P 821P

    821-P

    Abstract: 821P
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 7 LEAD TO–220 CASE 821P–02 ISSUE A SCALE 1:1 C E NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. 821P-01 OBSOLETE. NEW STANDARD IS 821P-02. A M N U Q P B


    Original     		PDF 821P-01 821P-02. 821-P 821P

    821E

    Abstract: 821E-04
    Text: MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS 7 LEAD TO–220 T7 CASE 821E–04 ISSUE D DATE 09/29/2000 SCALE 1:1 Q NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL


    Original     		PDF 821E-01 821E-04. 821E 821E-04

    Untitled

    Abstract: No abstract text available
    Text: BurrĆBrown Products from Texas Instruments DAC7821 DA C7 821 SBAS365B – OCTOBER 2005 – REVISED JULY 2007 12-Bit, Parallel Input, Multiplying Digital-to-Analog Converter FEATURES • • • • • • • • • • • • • • 2.5V to 5.5V Supply Operation


    Original     		PDF DAC7821 SBAS365B 12-Bit, 10MHz 20-Lead 12-Bit

    Untitled

    Abstract: No abstract text available
    Text: ADS821 ADS 821 U SBAS040B – DECEMBER 1995 – REVISED FEBRUARY 2005 10-Bit, 40MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES DESCRIPTION ● ● ● ● ● The ADS821 is a low-power, monolithic 10-bit, 40MHz Analog-to-Digital A/D converter utilizing a small geometry CMOS


    Original     		PDF ADS821 SBAS040B 10-Bit, 40MHz ADS821 10-bit 380mW

    Untitled

    Abstract: No abstract text available
    Text: 1SMA59xxBT3G Series, SZ1SMA59xxBT3G Series 1.5 Watt Plastic Surface Mount Zener Voltage Regulators http://onsemi.com This complete new line of 1.5 Watt Zener Diodes offers the following advantages. Features •         Standard Zener Breakdown Voltage Range − 3.3 V to 68 V


    Original     		PDF 1SMA59xxBT3G SZ1SMA59xxBT3G SZ1SMA59xxBT3G 1SMA5913BT3/D

    ON Semiconductor 831B

    Abstract: 1SMA5923BT3G ON code 829B marking 817B 1SMA5913BT3G 1SMA5926BT3G 1SMA5939BT3G 1sma5914bt3g 831-B 1SMA5929BT3G
    Text: 1SMA59xxBT3G Series, SZ1SMA59xxBT3G Series 1.5 Watt Plastic Surface Mount Zener Voltage Regulators http://onsemi.com This complete new line of 1.5 Watt Zener Diodes offers the following advantages. Features •         Standard Zener Breakdown Voltage Range − 3.3 V to 68 V


    Original     		PDF 1SMA59xxBT3G SZ1SMA59xxBT3G AEC-Q101 1SMA5913BT3/D ON Semiconductor 831B 1SMA5923BT3G ON code 829B marking 817B 1SMA5913BT3G 1SMA5926BT3G 1SMA5939BT3G 1sma5914bt3g 831-B 1SMA5929BT3G

    ON Semiconductor 831B

    Abstract: 817b 822B SMA 831b Onsemi 1SMA5941B 814B ON code 829B 829B 834b 822B SMA ON
    Text: 1SMA5913BT3 Series 1.5 Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of 1.5 Watt Zener Diodes offers the following advantages. http://onsemi.com Features • • • • • • • Standard Zener Breakdown Voltage Range − 3.3 V to 68 V


    Original     		PDF 1SMA5913BT3 1SMA5913BT3/D ON Semiconductor 831B 817b 822B SMA 831b Onsemi 1SMA5941B 814B ON code 829B 829B 834b 822B SMA ON

    marking 819B

    Abstract: 816B 813b zener 819B 1SMA5913BT3 403D 814B 815B 817B 818B
    Text: 1SMA5913BT3 Series 1.5 Watt Plastic Surface Mount Zener Voltage Regulators This complete new line of 1.5 Watt Zener Diodes offers the following advantages. http://onsemi.com Features • • • • • • • Standard Zener Breakdown Voltage Range − 3.3 V to 68 V


    Original     		PDF 1SMA5913BT3 1SMA5913BT3/D marking 819B 816B 813b zener 819B 403D 814B 815B 817B 818B

    marking 819B

    Abstract: ON Semiconductor 831B SZ1SMA5913BT3G SZ1SMA5935BT3G 823B SMA Marking 827B MARKING 818B marking 817B SZ1SMA5934BT3G l 0220 817b
    Text: 1SMA59xxBT3 Series, SZ1SMA59xxBT3G Series 1.5 Watt Plastic Surface Mount Zener Voltage Regulators http://onsemi.com This complete new line of 1.5 Watt Zener Diodes offers the following advantages. Features • • • • • • • • • Standard Zener Breakdown Voltage Range − 3.3 V to 68 V


    Original     		PDF 1SMA59xxBT3 SZ1SMA59xxBT3G AEC-Q101 1SMA5913BT3/D marking 819B ON Semiconductor 831B SZ1SMA5913BT3G SZ1SMA5935BT3G 823B SMA Marking 827B MARKING 818B marking 817B SZ1SMA5934BT3G l 0220 817b

    Untitled

    Abstract: No abstract text available
    Text: FDMD82100 Dual N-Channel Power Trench MOSFET 100 V, 7 A, 19 mΩ Features General Description „ Max rDS on = 19 mΩ at VGS = 10 V, ID = 7 A This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance


    Original     		PDF FDMD82100

    Untitled

    Abstract: No abstract text available
    Text: FDMC86570L N-Channel Shielded Gate PowerTrench MOSFET 60 V, 56 A, 4.3 mΩ Features „ Shielded Gate MOSFET Technology General Description „ Max rDS on = 4.3 mΩ at VGS = 10 V, ID = 18 A „ Termination is Lead-free This N-Channel MOSFET is produced using Fairchild


    Original     		PDF FDMC86570L

    TRANSISTOR AH-16

    Abstract: TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126 TRANSISTOR AH-16 TRANSISTOR bH-16 equivalent of transistor bc212 bc 214 transistor marking code SOT-23 2FX 2907A PNP bipolar transistors SILICON TRANSISTOR FS 2025 marking JV SOD323 bf245 replacement GI 312 diode msd601

    Untitled

    Abstract: No abstract text available
    Text: FDMD82100L Dual N-Channel PowerTrench MOSFET 100 V, 24 A, 19.5 mΩ Features General Description „ Max rDS on = 19.5 mΩ at VGS = 10 V, ID = 7 A This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain


    Original     		PDF FDMD82100L

    CBF493S

    Abstract: BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ
    Text: DL126/D Rev. 7, Nov-2001 Small-Signal Device Data Bipolar Transistors, JFETs and Diodes Small-Signal Device Data ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC SCILLC . SCILLC reserves the right to make changes without further


    Original     		PDF DL126/D Nov-2001 r14525 DL126/D CBF493S BC337 hie hre hfe BC449 equivalent transistor marking code SOT-23 2FX marking 513 SOD-323 bc213 equivalent MECL 10000 bc237c equivalent diode Marking code jv3 f BAV70 SOT-23 JJ

    Untitled

    Abstract: No abstract text available
    Text: FDMD82100L Dual N-Channel PowerTrench MOSFET 100 V, 24 A, 19.5 mΩ Features General Description „ Max rDS on = 19.5 mΩ at VGS = 10 V, ID = 7 A This device includes two 100V N-Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain


    Original     		PDF FDMD82100L

    AM0393-320R

    Abstract: IPC-A-600E MIL-P-55110D MIL-P-55110-D PCB BOARD DIMENSION BY SMA CONNECT AN8020 casey C0603C104K4RAC HP6624A marking code C3 SMD ic
    Text: XOCLCC6EVB Crystal Clock Oscillator Module Evaluation Board Manual for NBX Family in 6 Pin CLCC 5mm X 7mm Package http://onsemi.com Generic Evaluation Board: XOCLCC6EVB Devices: NBXxxxx Prepared by: Senad Lomigora, Casey Stys and Paul Shockman Description


    Original     		PDF 848AB AM0393-320R IPC-A-600E MIL-P-55110D MIL-P-55110-D PCB BOARD DIMENSION BY SMA CONNECT AN8020 casey C0603C104K4RAC HP6624A marking code C3 SMD ic

    Untitled

    Abstract: No abstract text available
    Text: XOCLCC6EVB Crystal Clock Oscillator Module Evaluation Board User's Manual for NBX Family in 6 Pin CLCC 5 mm x 7 mm Package http://onsemi.com EVAL BOARD USER’S MANUAL Generic Evaluation Board: XOCLCC6EVB Devices: NBXxxxx Description Evaluation Board Manual Document Features


    Original     		PDF 848AB EVBUM2076/D

    sustain circuits for plasma tv

    Abstract: sustain driver for plasma tv plasma display address electrode driving igbt for plasma tv circuit for driving address electrodes PDP igbt display plasma heat sink design guide, IGBT BD-2249 pdp driver plasma tv circuit diagram
    Text: www.fairchildsemi.com AN- 9038 PDP Panel Drive System Using PDP-SPMTM Module By S.N. Kim, D.C. Choi, J.E. Yeon, C.K. Kim Contents 1. Introduction 2. Plasma Display Panel 2.1. Consist of an AC PDP Panel 2.2. Commercial Driving Scheme for AC PDPs 2.3. Driving Methods for AC PDPs


    Original     		PDF

    NCV85085

    Abstract: 821E NCV85083 NCV85085DWR2
    Text: NCV85085 Product Preview 5.0 V Low Dropout Linear Regulator with Watchdog, RESET, and Wake Up The NCV85085 is a precision 5.0 V micropower voltage regulator. The part contains many of the required operational requirements for powering microprocessors. Its’ robustness makes it suitable for severe


    Original     		PDF NCV85085 NCV85085 NCV85083 r14525 NCV85085/D 821E NCV85085DWR2

    rca 3069

    Abstract: 821E NCV85083 NCV85085 rca h 818
    Text: NCV85083 Product Preview 3.3 V Low Dropout Linear Regulator with Watchdog, RESET, and Wake Up The NCV85083 is a precision 3.3 V micropower voltage regulator. The part contains many of the required operational requirements for powering microprocessors. Its’ robustness makes it suitable for severe


    Original     		PDF NCV85083 NCV85083 NCV85085 r14525 NCV85083/D rca 3069 821E rca h 818

    Ss 8210

    Abstract: 045 83.2 TI YEAR OF MANUFACTURE toshiba ta 8210
    Text: TPC 8210 T O S H IB A TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE UjM O S - _ IT - N T S iT \S f t _ T PC8 2 1 0 — Unit: mm Lithium Ion Battery Applications Note Book PC Portable Equipments Applications •Low drain-source ON resistance


    OCR Scan     		PDF

    ON Semiconductor marking 821

    Abstract: No abstract text available
    Text: SIEMENS BCR 583 PNP Silicon Digital Transistor >Switching circuit, inverter, interface circuit, driver circuit • Built in bias resistor R1=10ki2,R2=10kS2 Type Marking Ordering Code Pin Configuration BCR 583 XMs 1=B Q62702-C2385 Package 2=E 3=C SOT-23 Maximum Ratings


    OCR Scan     		PDF 10ki2 10kS2) Q62702-C2385 OT-23 III11 ON Semiconductor marking 821