ON TSOP-5 MAY Search Results

TSOP-6 .54

Abstract: NTGS3446 NTGS3446T1
Contextual Info: NTGS3446 Power MOSFET 5 Amps, 20 Volts N–Channel TSOP–6 Features • • • • • • Ultra Low RDS on Higher Efficiency Extending Battery Life Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified IDSS and VDS(on) Specified at Elevated Temperature

Hitachi DSA0076

Abstract: HAT1053 HAT1053M P Channel Power MOS FET Power Switching
Contextual Info: HAT1053M Silicon P Channel Power MOS FET Power Switching ADE-208-1220 Z Preliminary 1st. Edition Dec. 2000 Features • • • • Low on-resistance Low drive current High density mounting 2.5 V gate drive device Outline TSOP-6 4 5 6 1 2 5 6 D D D D 3 2

Hitachi DSA002752

Contextual Info: HAT1043M Silicon P Channel Power MOS FET Power Switching 5th Edition February 1999 Features • • • • Low on-resistance Low drive current High density mounting 2.5 V gate drive device can be driven from 3 V source Outline TSOP–6 4 5 6 1 2 5 6 D D D D

Memory

Contextual Info: 512Kx8/256Kx16/128Kx32, 30A167-00 A 15 - 35ns, Surface Mount FTS128KX32XP 4 Megabit 5 Volt CMOS SRAM DESCRIPTION: The FTS128KX32XP/XHP is a 68-pin surface mount module consisting of four 128K x 8 SRAM devices in plastic TSOP packages surface mounted on a FR-4

Contextual Info: _ SÌ3443DV Vishay Siliconix P-Channel, 2.5-V G-S MOSFET PRODUCT SUMMARY V o s (VI -2 0 to (A) R dS{ON) (¿2) 0.065 @ V Gs = “ 4-5 V ± 4 .4 0 .090 @ V GS * -2 .7 V ± 3 .7 0.100 @ V GS = -2 .5 V ± 3 .5 (4 )S o TSOP-6 Top View

tag 625 600

Abstract: Si3441DV
Contextual Info: Si3441DV P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "3.3 0.135 @ VGS = –2.5 V "2.9 (4) S TSOP-6 Top View 1 6 Power Dissipation (3) G 3 mm 2 5 3 4 Si3441DV—2.0 W (1, 2, 5, 6) D 2.75 mm P-Channel MOSFET

Si3441DV

Contextual Info: Si3441DV P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "3.3 0.135 @ VGS = –2.5 V "2.9 (4) S TSOP-6 Top View 1 6 Power Dissipation (3) G 3 mm 2 5 3 4 Si3441DV—2.0 W (1, 2, 5, 6) D 2.75 mm P-Channel MOSFET

Si3443DV

Abstract: S-54948
Contextual Info: Si3443DV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) –20 20 rDS(on) (W) ID (A) 0.065 @ VGS = –4.5 V "4.4 0.090 @ VGS = –2.7 V "3.7 0.100 @ VGS = –2.5 V "3.5 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm

Si3459DV-T1-E3

Abstract: SI3459DV
Contextual Info: Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 rDS(on) (W) ID (A) 0.220 @ VGS = −10 V "2.2 0.310 @ VGS = −4.5 V "1.9 D TrenchFETr Power MOSFET Available TSOP-6 Top View 1 6 2 5 3 4 (4) S (3) G 3 mm (1, 2, 5, 6) D

Si3455DV

Contextual Info: Si3455DV P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.190 @ VGS = –4.5 V "2.5 (4) S TSOP-6 Top View 1 Power Dissipation 6 (3) G 3 mm 2 5 3 4 Si3455DV—2.0 W (1, 2, 5, 6) D 2.75 mm P-Channel MOSFET

Si3442DV

Contextual Info: Si3442DV N-Channel Enhancement-Mode MOSFET Product Summary VDS V 20 rDS(on) (W) ID (A) 0.07 @ VGS = 4.5 V "4.0 0.095 @ VGS = 2.5 V "3.4 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 Power Dissipation (3) G Si3442DV—2.0 W (4) S 2.75 mm N-Channel MOSFET

Contextual Info: Si3457DV P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) DS( ) (W) ID (A) 0.065 @ VGS = –10 V "4.3 0.100 @ VGS = –4.5 V "3.4 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 Power Dissipation Si3457DV—2.0 W (1, 2, 5, 6) D 2.85 mm

Si3455DV

Contextual Info: Si3455DV P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.190 @ VGS = –4.5 V "2.5 (4) S TSOP-6 Top View 1 Power Dissipation 6 (3) G 3 mm 2 5 3 4 Si3455DV—2.0 W (1, 2, 5, 6) D 2.75 mm P-Channel MOSFET

Si3455DV

Contextual Info: Si3455DV P-Channel Enhancement-Mode MOSFET Product Summary VDS V –30 rDS(on) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.190 @ VGS = –4.5 V "2.5 (4) S TSOP-6 Top View 1 Power Dissipation 6 (3) G 3 mm 2 5 3 4 Si3455DV—2.0 W (1, 2, 5, 6) D 2.75 mm P-Channel MOSFET

Si3441BDV

Abstract: Si3441BDV-T1
Contextual Info: Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) −20 ID (A) 0.090 @ VGS = −4.5 V −2.9 0.130 @ VGS = −2.5 V −2.45 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D Ordering Information: Si3441BDV-T1

Contextual Info: Si3430DV Vishay Siliconix N-Channel 100-V D-S MOSFET PRODUCT SUMMARY VDS (V) 100 FEATURES rDS(on) (W) ID (A) 0.170 @ VGS = 10 V 2.4 0.185 @ VGS = 6.0 V 2.3 D High-Efficiency PWM Optimized D 100% Rg Tested TSOP-6 Top View 3 mm 1 6 2 5 (1, 2, 5, 6) D (3) G

SI3433BDV

Contextual Info: Si3433BDV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) −20 rDS(on) (W) ID (A) 0.042 @ VGS = −4.5 V −5.6 0.057 @ VGS = −2.5 V −4.8 0.080 @ VGS = −1.8 V −4.1 TSOP-6 Top View 3 mm 1 6 2 5 3 4 (4) S (3) G 2.85 mm (1, 2, 5, 6) D

Si3441DV

Contextual Info: Si3441DV P-Channel Enhancement-Mode MOSFET Product Summary VDS V –20 rDS(on) (W) ID (A) 0.10 @ VGS = –4.5 V "3.3 0.135 @ VGS = –2.5 V "2.9 (4) S TSOP-6 Top View 1 6 Power Dissipation (3) G 3 mm 2 5 3 4 Si3441DV—2.0 W (1, 2, 5, 6) D 2.75 mm P-Channel MOSFET

Si3454DV

Contextual Info: Si3454DV N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "4.2 0.095 @ VGS = 4.5 V "3.4 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 Power Dissipation (3) G Si3454DV—2.0 W (4) S 2.75 mm N-Channel MOSFET

Si3454DV

Contextual Info: Si3454DV N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "4.2 0.095 @ VGS = 4.5 V "3.4 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 Power Dissipation (3) G Si3454DV—2.0 W (4) S 2.75 mm N-Channel MOSFET

Si3454DV

Contextual Info: Si3454DV N-Channel Enhancement-Mode MOSFET Product Summary VDS V 30 rDS(on) (W) ID (A) 0.065 @ VGS = 10 V "4.2 0.095 @ VGS = 4.5 V "3.4 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 Power Dissipation (3) G Si3454DV—2.0 W (4) S 2.75 mm N-Channel MOSFET

Contextual Info: Si3435DV New Product Vishay Siliconix P-Channel 12-V D-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.036 @ VGS = - 4.5 V - 6.3 0.050 @ VGS = - 2.5 V - 5.3 0.073 @ VGS = - 1.8 V - 4.4 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D

si3457dv

Contextual Info: Si3457DV P-Channel 30-V D-S Rated MOSFET Product Summary VDS (V) –30 rDS(on) DS( ) (W) ID (A) 0.065 @ VGS = –10 V "4.3 0.100 @ VGS = –4.5 V "3.4 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 Power Dissipation Si3457DV—2.0 W (1, 2, 5, 6) D 2.85 mm

Contextual Info: Si3445DV Vishay Siliconix P-Channel 1.8-V G-S MOSFET New Product PRODUCT SUMMARY VDS (V) –8 RDS(ON) (W) ID (A) 0.042 @ VGS = –4.5 V "5.6 0.060 @ VGS = –2.5 V "4.7 0.080 @ VGS = –1.8 V "2.9 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D