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    ON TSOP6 MARKING 6L Search Results

    ON TSOP6 MARKING 6L Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    AV-THLIN2BNCM-025 Amphenol Cables on Demand Amphenol AV-THLIN2BNCM-025 Thin-line Coaxial Cable - BNC Male / BNC Male (SDI Compatible) 25ft Datasheet
    CN-DSUB50PIN0-000 Amphenol Cables on Demand Amphenol CN-DSUB50PIN0-000 D-Subminiature (DB50 Male D-Sub) Connector, 50-Position Pin Contacts, Solder-Cup Terminals Datasheet
    CN-DSUBHD62PN-000 Amphenol Cables on Demand Amphenol CN-DSUBHD62PN-000 High-Density D-Subminiature (HD62 Male D-Sub) Connector, 62-Position Pin Contacts, Solder-Cup Terminals Datasheet
    CO-058BNCX200-003 Amphenol Cables on Demand Amphenol CO-058BNCX200-003 BNC Male to BNC Male (RG58) 50 Ohm Coaxial Cable Assembly 3ft Datasheet
    CO-058BNCX200-050 Amphenol Cables on Demand Amphenol CO-058BNCX200-050 BNC Male to BNC Male (RG58) 50 Ohm Coaxial Cable Assembly 50ft Datasheet

    ON TSOP6 MARKING 6L Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: Si3455ADV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.100 at VGS = - 10 V - 3.5 0.170 at VGS = - 4.5 V - 2.7 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si3455ADV 2002/95/EC Si3455ADV-T1-E3 Si3455ADV-T1-GE3 11-Mar-11

    C065

    Abstract: No abstract text available
    Text: Si3456BDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.0 0.052 at VGS = 4.5 V 4.9 • Halogen free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si3456BDV 2002/95/EC Si3456BDV-T1-E3 Si3456BDV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12 C065

    Untitled

    Abstract: No abstract text available
    Text: Si3993DV Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.133 at VGS = - 10 V - 2.2 0.245 at VGS = - 4.5 V - 1.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3993DV 2002/95/EC Si3993DV-T1-E3 Si3993DV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si3445ADV Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.042 at VGS = - 4.5 V - 5.8 -8 0.060 at VGS = - 2.5 V - 4.9 0.080 at VGS = - 1.8 V - 4.2 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3445ADV 2002/95/EC Si3445ADV-T1-E3 Si3445ADV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si3443BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.060 at VGS = - 4.5 V - 4.7 0.090 at VGS = - 2.7 V - 3.8 0.100 at VGS = - 2.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3443BDV 2002/95/EC Si3443BDV-T1-E3 Si3443BDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si3993DV Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.133 at VGS = - 10 V - 2.2 0.245 at VGS = - 4.5 V - 1.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3993DV 2002/95/EC Si3993DV-T1-E3 Si3993DV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.090 at VGS = - 4.5 V - 2.9 0.130 at VGS = - 2.5 V - 2.45 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si3441BDV 2002/95/EC Si3441BDV-T1-E3 Si3441BDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Si3993DV Vishay Siliconix Dual P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.133 at VGS = - 10 V - 2.2 0.245 at VGS = - 4.5 V - 1.6 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET


    Original     		PDF Si3993DV 2002/95/EC Si3993DV-T1-E3 Si3993DV-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si3981DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.185 at VGS = - 4.5 V - 1.9 - 20 0.260 at VGS = - 2.5 V - 1.6 0.385 at VGS = - 1.8 V - 0.7 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3981DV 2002/95/EC Si3981DV-T1-E3 Si3981DV-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si3495DV Vishay Siliconix P-Channel 20-V D-S , 1.5-V (G-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.024 at VGS = - 4.5 V -7 0.030 at VGS = - 2.5 V - 6.2 0.038 at VGS = - 1.8 V - 5.2 0.048 at VGS = - 1.5 V - 5.0 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si3495DV 2002/95/EC Si3495DV-T1-E3 Si3495DV-T1-GE3 95xxx 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si3457BDV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 30 RDS(on) (Ω) ID (A) 0.054 at VGS = - 10 V - 5.0 0.100 at VGS = - 4.5 V - 3.7 • Halogen-free According to IEC 61249-2-21 Available • TrenchFET Power MOSFETs TSOP-6


    Original     		PDF Si3457BDV Si3457BDV-T1-E3 Si3457BDV-T1-GE3 11-Mar-11

    93XXX

    Abstract: SI3493DV
    Text: Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V -7 - 20 0.035 at VGS = - 2.5 V - 6.2 0.048 at VGS = - 1.8 V - 5.2 Qg (Typ.) 21 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3493DV 2002/95/EC Si3493DV-T1-E3 Si3493DV-T1-GE3 93xxx 11-Mar-11 93XXX

    Untitled

    Abstract: No abstract text available
    Text: Si3499DV Vishay Siliconix P-Channel 1.5 V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) -8 RDS(on) () ID (A) 0.023 at VGS = - 4.5 V -7 0.029 at VGS = - 2.5 V - 6.2 0.036 at VGS = - 1.8 V - 5.2 0.048 at VGS = - 1.5 V -5 Qg (Typ.) 28 • Halogen-free According to IEC 61249-2-21


    Original     		PDF Si3499DV 2002/95/EC Si3499DV-T1-E3 Si3499DV-T1-GE3 99xxx 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si3456BDV Vishay Siliconix N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) ID (A) 0.035 at VGS = 10 V 6.0 0.052 at VGS = 4.5 V 4.9 • Halogen free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • 100 % Rg Tested


    Original     		PDF Si3456BDV 2002/95/EC Si3456BDV-T1-E3 Si3456BDV-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQ3456EV Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) 8 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21


    Original     		PDF SQ3456EV 2002/95/EC AEC-Q101 SQ3456EV-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si3442BDV Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.057 at VGS = 4.5 V 4.2 0.090 at VGS = 2.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3442BDV 2002/95/EC Si3442BDV-T1-E3 Si3442BDV-T1-GE3 11-Mar-11

    Si3441BDV-T1-E3

    Abstract: No abstract text available
    Text: Si3441BDV Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 RDS(on) (Ω) ID (A) 0.090 at VGS = - 4.5 V - 2.9 0.130 at VGS = - 2.5 V - 2.45 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFETs


    Original     		PDF Si3441BDV 2002/95/EC Si3441BDV-T1-E3 Si3441BDV-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si3983DV Vishay Siliconix Dual P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.110 at VGS = - 4.5 V - 2.5 - 20 0.145 at VGS = - 2.5 V - 2.0 0.220 at VGS = - 1.8 V - 1.0 • Halogen free According to IEC 61249-2-21 Definition


    Original     		PDF Si3983DV 2002/95/EC Si3983DV-T1-E3 Si3983DV-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: Si3445ADV Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.042 at VGS = - 4.5 V - 5.8 -8 0.060 at VGS = - 2.5 V - 4.9 0.080 at VGS = - 1.8 V - 4.2 • Halogen-free According to IEC 61249-2-21 Definition • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3445ADV 2002/95/EC Si3445ADV-T1-E3 Si3445ADV-T1-GE3 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si3493DV Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) 0.027 at VGS = - 4.5 V -7 - 20 0.035 at VGS = - 2.5 V - 6.2 0.048 at VGS = - 1.8 V - 5.2 Qg (Typ.) 21 • Halogen-free According to IEC 61249-2-21 Definition


    Original     		PDF Si3493DV 2002/95/EC Si3493DV-T1-E3 Si3493DV-T1-GE3 93xxx 2011/65/EU 2002/95/EC. 2002/95/EC 2011/65/EU. 12-Mar-12

    Untitled

    Abstract: No abstract text available
    Text: Si3442BDV Vishay Siliconix N-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 RDS(on) (Ω) ID (A) 0.057 at VGS = 4.5 V 4.2 0.090 at VGS = 2.5 V 3.4 • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF Si3442BDV 2002/95/EC Si3442BDV-T1-E3 Si3442BDV-T1-GE3 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: SQ3481EV www.vishay.com Vishay Siliconix Automotive P-Channel 30 V D-S 175 °C MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • AEC-Q101 Qualifiedc • 100 % Rg and UIS Tested • Compliant to RoHS Directive 2002/95/EC


    Original     		PDF SQ3481EV AEC-Q101 2002/95/EC SQ3481EV-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQ3456EV www.vishay.com Vishay Siliconix Automotive N-Channel 30 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) () at VGS = 10 V 0.035 RDS(on) () at VGS = 4.5 V 0.052 ID (A) 8 Configuration Single TSOP-6 Top V iew 3 mm • Halogen-free According to IEC 61249-2-21


    Original     		PDF SQ3456EV AEC-Q101 2002/95/EC SQ3456EV-T1-GE3 11-Mar-11

    Untitled

    Abstract: No abstract text available
    Text: SQ3426EEV Vishay Siliconix Automotive N-Channel 60 V D-S 175 °C MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET Power MOSFET • Compliant to RoHS Directive 2002/95/EC • AEC-Q101 Qualifiedc


    Original     		PDF SQ3426EEV 2002/95/EC AEC-Q101 SQ3426EEV-T1-GE3 11-Mar-11