ON217 Search Results

3 pin IR sensor pin connection

Abstract: high sensitivity reflective phototransistor ON2175 3 pin IR sensor circuit ic measurement
Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2175 Reflective Photosensor Tape end sensor for DAT • Outline O N 2 1 7 5 is a se n so r w h ic h c o n sists o f a h ig h e ffic ie n c y G aA s infrared light em itting diode and a high sensitivity Si phototransistor

ON2170

Abstract: high sensitivity reflective phototransistor
Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2170 Reflective Photosensor • Outline Unit : mm Mark for indicating anode side C0.5 O N2170 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Reflective Photosensors (Photo Reflectors) CNB1009 (ON2173) Reflective Photosensor For contactless SW and object detection • Overview M Di ain sc te on na tin nc ue e/ d CNB1009 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as

Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2175 Reflective Photosensor Tape end sensor for DAT • Outline O N2175 is a sensor w hich consists o f a high efficiency GaAs infrared light emitting diode and a high sensitivity Si phototransistor w hich are arranged together in the sam e direction. It detects the

CNB1301

Abstract: CNB1302 ON2171
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Reflective Photosensors (Photo Reflectors) CNB1301 (ON2171) Reflective Photosensor For contactless SW and object detection • Overview  Features ue pl d in ea an c se ed lud pl vi an m m es

CNB1304

Abstract: CNB1304H ON2175
Contextual Info: Reflective Photosensors Photo Reflectors CNB1304H (ON2175) Reflective Photosensor Unit : mm (R2.3) 4.0±0.3 ø2.2±0.3 2-ø1.2±0.15 (4-R0.3) Overview CNB1304H is a sensor which consists of a high efficiency GaAs infrared light emitting diode and a high sensitivity Si phototransistor

ON2179

Abstract: focal reflective phototransistor CNZ2179 ON2179 circuit V40IF
Contextual Info: Reflective Photosensors Photo Reflectors CNZ2179 (ON2179) Reflective Photosensor Unit : mm 5.2 Overview CNZ2179 is a reflective photosensor with a long focal distance, in which a high efficiency GaAs infrared light emitting diode is used as a light emitting element and a high sensitivity Si phototransistor

Contextual Info: Reflective Photosensors Photo Reflectors ON2170 Reflective Photosensor Unit : mm Outline 9.0±1.0 ON2170 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated with a high sensitivity Si phototransistor in a single resin package.

IC weight sensor

Abstract: Reflective photosensor response time CNB1304H ON2175 Reflective photosensor photo sensor matsua
Contextual Info: Reflective Photosensors Photo Reflectors CNB1304H (ON2175) Reflective photosensor Tape end sensor for DAT (R2.3) 4.0±0.3 Unit: mm φ2.2±0.3 • Absolute Maximum Ratings Ta = 25°C Parameter Symbol Rating Reverse voltage VR 3 V emitting diode) Forward current

Matsushita sensor MA

Abstract: INFRARED SENSOR photo sensor devices Reflective photosensor Reflective Optical Sensor with Transistor Output Reflective photosensor response time IR PHOTO DIODE photo transistor light emitting diode photo sensor matsushita datasheet
Contextual Info: Reflective Photosensors Photo Reflectors CNB1304H (ON2175) Reflective photosensor Tape end sensor for DAT (R2.3) 4.0±0.3 Unit: mm φ2.2±0.3 +0 5.0 -0.3 6.5±0.3 3.75±0.15 4.0±0.3 +0 8.0 -0.3 2-φ1.2±0.15 M Di ain sc te on na tin nc ue e/ d CNB1304H is a sensor which consists of a high efficiency GaAs

Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2173 Reflective Photosensor • Outline ON2173 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si phototransistor

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Reflective Photosensors (Photo Reflectors) CNB1301 (ON2171) Reflective Photosensor For contactless SW and object detection • Overview M Di ain sc te on na tin nc ue e/ d CNB1301 is a reflective photosensor consisting of a small, thin reflective photosensor (CNB1302) to which a plastic lens is attached to

CNB1302

Abstract: ON2170 LSMFRN4S0001
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Reflective Photosensors (Photo Reflectors) CNB1302 (ON2170) Reflective Photosensor For contactless SW and object detection • Overview CNB1302 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated

CNB1009

Abstract: ON2173
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Reflective Photosensors (Photo Reflectors) CNB1009 (ON2173) Reflective Photosensor For contactless SW and object detection • Overview CNB1009 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as

CNB1304H

Abstract: ON2175
Contextual Info: Reflective Photosensors Photo Reflectors CNB1304H (ON2175) Reflective photosensor Tape end sensor for DAT (R2.3) 4.0±0.3 Unit: mm φ2.2±0.3 (4-R0.3) • Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage emitting diode) Forward current Power dissipation *1

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Reflective Photosensors (Photo Reflectors) CNB1302 (ON2170) Reflective Photosensor For contactless SW and object detection • Overview M Di ain sc te on na tin nc ue e/ d CNB1302 is a small, thin reflective photosensor consisting of a high efficiency GaAs infrared light emitting diode which is integrated

CNB1009

Abstract: ON2173
Contextual Info: Reflective Photosensors Photo Reflectors CNB1009 (ON2173) Reflective Photosensor Overview Unit : mm (1.0) 7.4±0.2 1.0 1.0 19.0±0.3 2-9.5±0.2 Applications Detection of paper, film and cloth Optical mark reading (15.5) (2.54) 2.5 min. Small size, light weight

Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2170 Reflective Photosensor Unit : mm • Outline M ark for indicating anode side C0.5 O N 2 1 7 0 is a sm all, th in re fle c tiv e p h o to se n so r c o n sistin g o f a high efficiency G aA s infrared light em itting diode w hich is integrated

Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2171 Reflective Photosensor Unit : mm • O utline ■ Device center g O N 2171 is a re fle c tiv e p h o to se n so r c o n sistin g o f a sm all, thin reflectiv e p h o to sen so r (O N 2170) to w hich a plastic lens is

K1060

Contextual Info: Reflective Photosensors Photo Reflectors CNZ2179 (ON2179) Reflective photosensor Unit: mm 5.2 Non-contact point SW, object sensing • Overview 13.0 0.85 max. (2-0.5) (2-0.5) ■ Features (7.6) • Long focal distance: 6 mm (typ.) • Visible light cutoff resin is used

circuit motor forward reverse control

Abstract: Reflective photosensor response time phototransistor visible light CNB1302 ON2170 ON2170 MATSUA
Contextual Info: Reflective Photosensors Photo Reflectors CNB1302 (ON2170) Reflective photosensor Non-contact point SW, object sensing Unit: mm 2.0±0.2 9.0±1.0 4-0.5 4-0.7 2.0±0.2 • Ultraminiature, thin type: 2.7 mm x 3.4 mm (height: 1.5 mm) • Visible light cutoff resin is used

Contextual Info: Reflective Photosensors Photo Reflectors CNB1009 (ON2173) Reflective photosensor Non-contact point SW, object sensing Unit: mm 4.0±0.2 (1.0) 19.0±0.3 2-9.5±0.2 1.0 7.4±0.2 1.0 φ2.2±0.2 9.5±0.3 • Fast response: tr , tf = 6 µs (typ.) • Small size, light weight

Reflective photosensor

Abstract: high sensitivity reflective phototransistor 100S ON2173
Contextual Info: Panasonic Reflective Photosensors Photo Reflectors ON2173 Reflective Photosensor • Outline ON2173 is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si photo transistor

ON2170

Abstract: optical interrupter darlington phototransistor 3 pin "Photo Interrupter" Application Note 3 pin phototransistor ic 1001 1002 phototransistor visible light CNB2003 ON2270 CNB1002
Contextual Info: Panasonic Small Package Reflective Photo-interrupter Series ON2170/2270,CNB1001/1002/2001 ,CNB2003 • ■ Features Package photograph •M iniature and thin type:2.7x3.4mm Height 1.5mm •P lastic resin to cut-off visible light is used •E asy interface to control circuit