Si apd photodiode
Abstract: parameter vk 45 Si apd photodiode 700 nm 2SC3138Y apd 400- 700 nm 2SC3138-Y S8328 420nm quadrant avalanche photodiode Photodiode apd high sensitivity
Text: US Patent Pending APD Si APD S8328 Quadrant APD with high bluish-violet sensitivity S8328 is a quadrant APD Avalanche Photodiode having a gain of 2-100. The peak gain lies at 420 nm and creates a high sensitivity for blue to violet minor signals. An on-chip bias control circuit gives the most stable output from low to high temperature.
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S8328
S8328
SE-171
KAPD1006E01
Si apd photodiode
parameter vk 45
Si apd photodiode 700 nm
2SC3138Y
apd 400- 700 nm
2SC3138-Y
420nm
quadrant avalanche photodiode
Photodiode apd high sensitivity
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BPW21 application note
Abstract: BPW21 photodiode application lux meter 308-067 photodiode lumen uA741 linear photometer photodiode RS 308-067 564-037 303-674 UV Photodiode
Text: Issued March 1999 298-4562 Data Pack F Photodiodes Data Sheet Basics of photometry Figure 2 This is a brief introduction to the basics of photometry. To be able to understand this subject better a brief review of geometric principles utilised is required.
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BPW21 application note
Abstract: 308-067 uA741 linear photometer 564-037 BPW21 303-674 bpw21 op BPW21 equivalent uv Photocell bpw21 amplifier
Text: Issued July 1998 298-4562 Data Pack F Photodiodes Data Sheet Basics of photometry Figure 2 This is a brief introduction to the basics of photometry. To be able to understand this subject better a brief review of geometric principles utilised is required. Geometric principles
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BPW21 application note
Abstract: 308-067 uA741 linear photometer Photodiode amplifier ceramic case large area quadrant photodiode photodiode RS 308-067 BPW21 fast photodiode Photodiode laser detector BPX-65 RS 308-067
Text: Issued March 1997 232-3894 Data Pack F Photodiodes Data Sheet Basics of photometry Figure 2 This is a brief introduction to the basics of photometry. To be able to understand this subject better a brief review of geometric principles utilised is required.
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308-067
Abstract: 57-27 silicon diode BPW21 application note Photodiode laser detector BPX-65 large area quadrant photodiode RS 308-067 uA741 linear photometer photodiode application lux meter uv photodiode photo diode array amplifier
Text: Issued March 1993 F14784 Photodiodes Basics of photometry This is a brief introduction to the basics of photometry. To be able to understand this subject better a brief review of geometric principles utilised is required. Figure 2 Geometric principles Radian
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F14784
308-067
57-27 silicon diode
BPW21 application note
Photodiode laser detector BPX-65
large area quadrant photodiode
RS 308-067
uA741 linear photometer
photodiode application lux meter
uv photodiode
photo diode array amplifier
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photodiode RS 308-067
Abstract: BPW21 application note bpw21 op RS 308-067 3054-62 Photodiode laser detector BPX-65 lm308 equivalent T05 Package large area quadrant photodiode BPW21
Text: Issued March 1993 014-784 Data Pack F Photodiodes Data Sheet Basics of photometry Figure 2 This is a brief introduction to the basics of photometry. To be able to understand this subject better a brief review of geometric principles utilised is required. Geometric principles
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bc577
Abstract: SFH202 BC577 transistor IA184A OPA660 diode Z47 BUF601 PREAMPLIFIER TRANSIMPEDANCE optic fet CA3080 LM1881
Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132
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150MHz
HDTV100
OPA623
LM1881
BC577
CA3080
BUF601
2N3904
100nF
bc577
SFH202
BC577 transistor
IA184A
OPA660
diode Z47
BUF601
PREAMPLIFIER TRANSIMPEDANCE optic fet
CA3080
LM1881
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bc577
Abstract: PREAMPLIFIER TRANSIMPEDANCE optic fet SFH202 AGC OPA660 BC577 transistor LM1881 equivalent operational amplifier discrete schematic diode Z47 IA184A Burr Brown application bulletin transimpedance
Text: APPLICATION BULLETIN Mailing Address: PO Box 11400 • Tucson, AZ 85734 • Street Address: 6730 S. Tucson Blvd. • Tucson, AZ 85706 Tel: 602 746-1111 • Twx: 910-952-111 • Telex: 066-6491 • FAX (602) 889-1510 • Immediate Product Info: (800) 548-6132
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150MHz
bc577
PREAMPLIFIER TRANSIMPEDANCE optic fet
SFH202
AGC OPA660
BC577 transistor
LM1881 equivalent
operational amplifier discrete schematic
diode Z47
IA184A
Burr Brown application bulletin transimpedance
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Untitled
Abstract: No abstract text available
Text: IVC102 PRECISION SWITCHED INTEGRATOR TRANSIMPEDANCE AMPLIFIER APPLICATIONS DESCRIPTION ● PRECISION LOW CURRENT MEASUREMENT The IVC102 is a precision integrating amplifier with FET op amp, integrating capacitors, and low leakage FET switches. It integrates low-level input current for
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IVC102
IVC102
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IVC102
Abstract: 6730S IVC102P IVC102U
Text: IVC102 PRECISION SWITCHED INTEGRATOR TRANSIMPEDANCE AMPLIFIER APPLICATIONS DESCRIPTION ● PRECISION LOW CURRENT MEASUREMENT The IVC102 is a precision integrating amplifier with FET op amp, integrating capacitors, and low leakage FET switches. It integrates low-level input current for
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IVC102
IVC102
6730S
IVC102P
IVC102U
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6730S
Abstract: IVC102 IVC102P IVC102U
Text: IVC102 PRECISION SWITCHED INTEGRATOR TRANSIMPEDANCE AMPLIFIER APPLICATIONS DESCRIPTION ● PRECISION LOW CURRENT MEASUREMENT The IVC102 is a precision integrating amplifier with FET op amp, integrating capacitors, and low leakage FET switches. It integrates low-level input current for
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IVC102
IVC102
6730S
IVC102P
IVC102U
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Untitled
Abstract: No abstract text available
Text: IVC102 PRECISION SWITCHED INTEGRATOR TRANSIMPEDANCE AMPLIFIER APPLICATIONS DESCRIPTION ● PRECISION LOW CURRENT MEASUREMENT The IVC102 is a precision integrating amplifier with FET op amp, integrating capacitors, and low leakage FET switches. It integrates low-level input current for
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IVC102
IVC102
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Untitled
Abstract: No abstract text available
Text: IVC102 PRECISION SWITCHED INTEGRATOR TRANSIMPEDANCE AMPLIFIER APPLICATIONS DESCRIPTION ● PRECISION LOW CURRENT MEASUREMENT The IVC102 is a precision integrating amplifier with FET op amp, integrating capacitors, and low leakage FET switches. It integrates low-level input current for
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IVC102
IVC102
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Untitled
Abstract: No abstract text available
Text: IVC102 PRECISION SWITCHED INTEGRATOR TRANSIMPEDANCE AMPLIFIER APPLICATIONS DESCRIPTION ● PRECISION LOW CURRENT MEASUREMENT The IVC102 is a precision integrating amplifier with FET op amp, integrating capacitors, and low leakage FET switches. It integrates low-level input current for
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IVC102
IVC102
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Untitled
Abstract: No abstract text available
Text: IVC102 PRECISION SWITCHED INTEGRATOR TRANSIMPEDANCE AMPLIFIER APPLICATIONS DESCRIPTION ● PRECISION LOW CURRENT MEASUREMENT The IVC102 is a precision integrating amplifier with FET op amp, integrating capacitors, and low leakage FET switches. It integrates low-level input current for
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IVC102
IVC102
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Untitled
Abstract: No abstract text available
Text: IVC102 PRECISION SWITCHED INTEGRATOR TRANSIMPEDANCE AMPLIFIER APPLICATIONS DESCRIPTION ● PRECISION LOW CURRENT MEASUREMENT The IVC102 is a precision integrating amplifier with FET op amp, integrating capacitors, and low leakage FET switches. It integrates low-level input current for
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IVC102
IVC102
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Untitled
Abstract: No abstract text available
Text: IVC102 PRECISION SWITCHED INTEGRATOR TRANSIMPEDANCE AMPLIFIER APPLICATIONS DESCRIPTION ● PRECISION LOW CURRENT MEASUREMENT The IVC102 is a precision integrating amplifier with FET op amp, integrating capacitors, and low leakage FET switches. It integrates low-level input current for
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IVC102
IVC102
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LT1328
Abstract: IRDA TRANSMITTER 74hc161 application notes A 434 RF Receiver TRANSMITTER PAIR CDRH74 LTC1474 LTC1475 LTC1590 MBR0530 battery level indicator
Text: LinearTechnologyChronicle A Showcase of Linear Technology’s Focus Products Products of the Month Micropower Step-Down Converters in MSOP Packages Draw Only 10µA Quiescent Current The LTC 1474/LTC1475 are high efficiency step-down DC/DC converters that
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1474/LTC1475
LTC1474/
LTC1475
1-800-4-LINEAR
LT1328
IRDA TRANSMITTER
74hc161 application notes
A 434 RF Receiver TRANSMITTER PAIR
CDRH74
LTC1474
LTC1590
MBR0530
battery level indicator
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Untitled
Abstract: No abstract text available
Text: LMV861, LMV862 www.ti.com SNOSAZ5C – FEBRUARY 2008 – REVISED MARCH 2013 LMV861/LMV862 30 MHz Low Power CMOS, EMI Hardened Operational Amplifiers Check for Samples: LMV861, LMV862 FEATURES DESCRIPTION 1 Unless Otherwise Noted, Typical Values at TA = 25°C, V + = 3.3V
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LMV861,
LMV862
LMV861/LMV862
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Untitled
Abstract: No abstract text available
Text: LMV861, LMV862 www.ti.com SNOSAZ5C – FEBRUARY 2008 – REVISED MARCH 2013 LMV861/LMV862 30 MHz Low Power CMOS, EMI Hardened Operational Amplifiers Check for Samples: LMV861, LMV862 FEATURES DESCRIPTION 1 Unless Otherwise Noted, Typical Values at TA = 25°C, V+ = 3.3V
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LMV861,
LMV862
LMV861/LMV862
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load cell sensor
Abstract: op-amp used for quadrant photodiode bill validator machine circuit
Text: LMV861, LMV862 www.ti.com SNOSAZ5C – FEBRUARY 2008 – REVISED MARCH 2013 LMV861/LMV862 30 MHz Low Power CMOS, EMI Hardened Operational Amplifiers Check for Samples: LMV861, LMV862 FEATURES DESCRIPTION 1 Unless Otherwise Noted, Typical Values at TA = 25°C, V+ = 3.3V
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LMV861,
LMV862
LMV861/LMV862
LMV861
LMV862
load cell sensor
op-amp used for quadrant photodiode
bill validator machine circuit
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dual photodiode
Abstract: AD7545 AD648AQ jedec MS-012-AA trimmer electron AD648TQ/883B matched pair JFET photodiode amplifier AD548 AD648
Text: a FEATURES DC Performance 400 A max Quiescent Current 10 pA max Bias Current, Warmed Up AD648B 1 V max Offset Voltage (AD648B) 10 V/؇C max Drift (AD648B) 2 V p-p Noise, 0.1 Hz to 10 Hz AC Performance 1.8 V/s Slew Rate 1 MHz Unity Gain Bandwidth
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AD648B)
MIL-STD-883B
EIA-481A
AD548
AD648
dual photodiode
AD7545
AD648AQ
jedec MS-012-AA
trimmer electron
AD648TQ/883B
matched pair JFET
photodiode amplifier
AD548
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diode pico-amp
Abstract: matched pair JFET AD648TQ/883B AD548 AD648 AD648A AD648B AD648C AD648J AD648K
Text: a FEATURES DC Performance 400 A max Quiescent Current 10 pA max Bias Current, Warmed Up AD648C 300 V max Offset Voltage (AD648C) 3 V/؇C max Drift (AD648C) 2 V p-p Noise, 0.1 Hz to 10 Hz AC Performance 1.8 V/s Slew Rate 1 MHz Unity Gain Bandwidth
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AD648C)
MIL-STD-883B
EIA-481A
AD548
AD648
AD648.
AD648
diode pico-amp
matched pair JFET
AD648TQ/883B
AD548
AD648A
AD648B
AD648C
AD648J
AD648K
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Untitled
Abstract: No abstract text available
Text: BACK a FEATURES DC Performance 400 A max Quiescent Current 10 pA max Bias Current, Warmed Up AD648C 300 V max Offset Voltage (AD648C) 3 V/؇C max Drift (AD648C) 2 V p-p Noise, 0.1 Hz to 10 Hz AC Performance 1.8 V/s Slew Rate 1 MHz Unity Gain Bandwidth
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AD648C)
MIL-STD-883B
EIA-481A
AD548
AD648
AD648
AD648.
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