OP800 Search Results

phototransistor npn

Abstract: phototransistor 400nm OP800 OP800A OP800B OP800C OP800D
Contextual Info: NPN Silicon Phototransistor OP800A, OP800B, OP800C, OP800D Features: • • • • • • Narrow receiving angle Suitable for applications from 400nm to 1100 Variety of sensitivity ranges TO-18 hermetically sealed package Enhanced temperature range Base lead connection

OP800SL

Abstract: OP290C OP801SL OP805SL
Contextual Info: Types OP800SL thru OP805SL Electrical Characteristics TA= 25' C unless otherwise noted I c ( o ~ ) On-State Collector Current I 1 1 I 0.5 0.5 OP800SL OP801SL TEST CONDITIONS 1 3.0 mA mA 100 nA VCE=IOV,E~=O Collector Dark Current ICEO I MIN TYP MAX UNITS

Contextual Info: 0 .O P I E K Product Bulletin OP 8OOA June 1996 NPN Silicon Phototransistors Types OP800A, OP800B, OP800C, OP800D Features • Narrow receiving angle • Variety of sensitivity ranges • Enhanced tem perature range • TO-18 hermetically sealed package • Mechanically and spectrally matched

OP131

Abstract: op133w OP133 OP130 OP130W OP132 OP593 OP598 OP599 OP800
Contextual Info: Hermetic Infrared Emitting Diode OP130 Series Features: • • • • • • TO-46 hermetically sealed package Focused and non-focused optical light pattern Enhanced temperature range Mechanically and spectrally matched to other OPTEK devices Choice of power ranges

OPV302

Abstract: OP830 angle position sensors VCSEL OP800 OP910 TO46 package
Contextual Info: Vertical Cavity Surface Emitting Laser in TO-46 Package OPV302 • • • • • 850nm VCSEL technology High thermal stability Low drive current High output power Narrow Beam Angle The OPV302 is a Vertical Cavity Surface Emitting Laser VCSEL packaged in a dome lens TO-46 package.

Contextual Info: O P T E K T E C H N O L O G Y I N C O b E D | f c 7 i a S S Ü O p to e le c tro n ic s D iv is io n 0 O D 0 1 7 M r-m -b i T R W Electronic Components Group ¿ I I I I I I Product Bulletin 5136 January 1985 IMPIM Silicon Phototransistors Types OP8QO, 0P8Q1, OP8Q2, 0P8Ü3, 0P8Q4, 0P8Q5

OP133

Contextual Info: Hermetic Infrared Emitting Diode OP130 Series Features: • • • • • • TO-46 hermetically sealed package Focused and non-focused optical light pattern Enhanced temperature range Mechanically and spectrally matched to other OPTEK devices Choice of power ranges

Contextual Info: 0 .Q P I E K Product Bulletin O P 8 OOWSL June 1996 NPN Silicon Phototransistors Types OP 8 OOWSL, OP 8 OIWSL, OP8Q2WSL Features Absolute Maximum Ratings T a = 25° C unless otherwise noted • • • • • Collector-Emitter Voltage. 30 V

OP235W

Abstract: OP800WSL OP830SL
Contextual Info: PRELIMINARY Product Bulletin OP235W July 2001 GaAlAs Hermetic Infrared Emitting Diodes Type OP235W Features Absolute Maximum Ratings TA = 25o C unless otherwise noted • High Speed • Enhanced temperature range • Wide irradiance pattern • Mechanically and spectrally matched

op598

Contextual Info: 0 .O P IE K Product Bulletin OP231 June 1996 GaAIAs Hermetic Infrared Emitting Diodes Types OP231, OP232, OP233 Features Absolute Maximum Ratings Ta = 25° C unless otherwise noted • Enhanced temperature range • TO-46 hermetically sealed package • Mechanically and spectrally matched

OP232

Contextual Info: Hermetic Infrared Emitting Diode OP230 Series Features: • • • • • • Focused and non-focused optical light pattern Enhanced temperature range TO-46 hermetically sealed package Mechanically and spectrally matched to other OPTEK devices Choice of power ranges

OP800WSL

Abstract: OP802 K5201 OP130W OP231W OP801WSL OP802WSL QP802WSL phototransistor t33
Contextual Info: @ .OEEEK Product Bulletin O P 8 OOWSL J u n e 1996 NPN Silicon Phototransistors Types OP8OOWSL, OP8OIWSL, OP8Q2WSL Features Absolute Maximum Ratings T a = 25° C u n le ss otherw ise noted • • • • • Collector-Em itter V o lta g e . 30 V

QP802

Contextual Info: OPTEK TECHNOLOGY INC ObE D | tTTflSflO OOODl?b b O p ia s ie c iro n ic s u iv is io n T R W Electronic Components Group i i l f V Product Bulletin 5138 January 1985 N P N Silicon P h o to tra n s is to rs Types 0P800W , O P8Q1W , QP802W Fe a tu re s • Flat lensed for wide acceptance angle

OP235

Abstract: OP800 OP830
Contextual Info: Prod uct Bul le tin OP235 Janu ary 2002 PRELIMINARY GaAlAs Hermetic Infrared Emitting Diode Type OP235 Case Features Ab so lute Maxi mum Rat ings (TA = 25o C un less oth er wise noted) • High Speed • Enhanced temperature range • Mechanically and spectrally matched

QP802

Abstract: OP800W TQ18 0P802W
Contextual Info: OPTEK TECHNOLOGY INC ObE D | bTTflSflO DD0D17b b O p to e le c tro n ic s u m s i o n m m MMXWW T R W Electronic C om ponents G roup Product Bulletin 6138 January 1985 N P N Silicon Phototransistors Types 0P8Q0W, QP801W , QP802W Fe a tu re s A b s o lu te M e x im u m R a tin g s T a - 25°C unless otherwise noted

OP130

Abstract: OP230 OP800B
Contextual Info: O P T EK Product Bulletin O P 8OOA June 1996 NPN Silicon Phototransistors Types OP8OOA, OP8OOB, OP8OOC, OP8OOD Features • • • • • Narrow receiving angle Variety of sensitivity ranges Enhanced temperature range TO-18 hermetically sealed package Mechanically and spectrally matched

Contextual Info: Vertical Cavity Surface Emitting Laser in TO-46 Package OPV302 • • • • • 850nm VCSEL technology High thermal stability Low drive current High output power Narrow Beam Angle The OPV302 is a Vertical Cavity Surface Emitting Laser VCSEL packaged in a dome lens TO-46 package.

Contextual Info: Photologic Optically Coupled Isolator OPI125, OPI126, OPI127, OPI127-032, OPI128 Features: • Four output options • 15 kV input-to-output isolation • • • • voltage • Direct TTL/STTL interface • High noise immunity Data rates to 250 KBit/s

Contextual Info: Hermetic Infrared Emitting Diode OP130 Series Features: • • • • • • TO-46 hermetically sealed package Focused and non-focused optical light pattern Enhanced temperature range Mechanically and spectrally matched to other OPTEK devices Choice of power ranges

OP130

Abstract: OP230 OP800 OPI125 OPI126 OPI127 OPI128
Contextual Info: Photologic Optically Coupled Isolator OPI125, OPI126, OPI127, OPI127-032, OPI128 Features: • Four output options • 15 kV input-to-output isolation • • • • voltage • Direct TTL/STTL interface • High noise immunity Data rates to 250 KBit/s

OPB960N55

Abstract: marking code ny SMD Transistor npn OPB840L51 Package TO-78 E23 SMD Transistor A1 MEXICO TRANSMISSIVE SENSOR OPB840L55 OPB365T55 OPB875N51 OPB970N51
Contextual Info: OPTEK products are in applications that are a part of your everyday life. We can be found in automobiles, office equipment, vending machines, banks, hospitals, home security, architectural lighting, industrial plants, military and aerospace applications and even at sports games or

OP234W

Abstract: OP800WSL OP830SL
Contextual Info: Product Bulletin OP234W July 2001 PRELIMINARY GaAlAs Hermetic Infrared Emitting Diodes Type OP234W Features Absolute Maximum Ratings TA = 25o C unless otherwise noted • Very high speed • Enhanced temperature range • Wide irradiance pattern • Mechanically and spectrally matched

OP830

Abstract: OP800 OP910 OPV302
Contextual Info: Vertical Cavity Surface Emitting Laser in TO-46 Package OPV302 • • • • • 850nm VCSEL technology High thermal stability Low drive current High output power Narrow Beam Angle The OPV302 is a Vertical Cavity Surface Emitting Laser VCSEL packaged in a dome lens TO-46 package.

Contextual Info: Infrared Light Emitting Diode OP205CL Features: • • • • • High power GaAIAs Narrow beam angle—near parallel beam 875 nm wavelength TO-46 package Wide operating temperature range Description: The OP205CL is a high efficiency GaAIAs infrared LED mounted in a TO-46 metal can package. The device