OPB0808 Search Results
OPB0808 Datasheets Context Search
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Contextual Info: Silicon Photo Transistor OPB0808 1. Structure 1.1 Chip Size : 0.80mm X 0.80mm 1.2 Chip thickness : 280 20um 1.3 Metallization : Top - Al, Bottom - Au 1.4 Passivation : Silicon Nitride 1.5 Bonding Pad Size - Emitter : 140um - Base : 100um X 100um 1.6 Active Area : 0.64mm X 0.64mm |
Original |
OPB0808 140um 100um 100um 500uA | |
835 CB
Abstract: OPB0808 transistor 835
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Original |
OPB0808 140um 100um 100um 500uA 835 CB OPB0808 transistor 835 |